The Datasheet Archive

2SD1991A datasheet (11)

Part Manufacturer Description Type PDF
2SD1991A Panasonic NPN Transistor Original PDF
2SD1991A Panasonic Silicon NPN epitaxial planer type Original PDF
2SD1991A Others The Transistor Manual (Japanese) 1993 Scan PDF
2SD1991A Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SD1991A0A Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN GP AMP 50VCEO MT-1 Original PDF
2SD1991AQ Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
2SD1991AR Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
2SD1991AR Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
2SD1991ARA Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN GP AMP 50VCEO MT-1 Original PDF
2SD1991AS Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
2SD1991AS Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF

2SD1991A Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - 2SB1320A

Abstract: 2SD1991A
Text: Transistor 2SD1991A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1320A Unit: mm 0.15 0.65 max. 14.5±0.5 q High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 1.0 , Q R S hFE1 160 ~ 260 210 ~ 340 290 ~ 460 1 Transistor 2SD1991A PC - Ta , ­1 ­3 ­10 ­30 Emitter current IE (mA) ­100 Transistor 2SD1991A Cob - VCB


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PDF 2SD1991A 2SB1320A 2SB1320A 2SD1991A
2003 - Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1991A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1320A (0.7) Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) (1.0) 3.5±0.1 Features · High forward current transfer ratio hFE · Low , with the RoHS Directive (EU 2002/95/EC). 2SD1991A PC Ta 500 60 IC VCE Ta = 25°C IB = 160 µA , SJC00234BED This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1991A Cob VCB


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PDF 2002/95/EC) 2SD1991A 2SB1320A
2SD1991A

Abstract: No abstract text available
Text: 2SD1991A (NPN) TO-92 Bipolar Transistors 1. EMITTER 2. COLLECTOR 3. BASE TO-92 Features High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC , =2mA CLASSIFICATION OF Rank Range hFE(1) Q 160-260 R 210-340 S 290-460 2SD1991A (NPN) TO-92 Bipolar Transistors Typical Characteristics 2SD1991A (NPN) TO-92 Bipolar Transistors -


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PDF 2SD1991A 100mA 200MHz
Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1991A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1320A Unit: mm ■Features • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE , complies with the RoHS Directive (EU 2002/95/EC). 2SD1991A PC  Ta IC  VCE 60 IB  VBE 1 , (EU 2002/95/EC). 2SD1991A NV  IC VCE = 10 V Ta = 25°C Function = FLAT 80 22 kâ


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PDF 2002/95/EC) 2SD1991A 2SB1320A
2006 - 2SD1991A

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SD1991A TO-92 TRANSISTOR (NPN) 1. EMITTER FEATURES High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value , 2SD1991A Jiangsu Changjiang Electronics Technology


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PDF 2SD1991A 100mA 100mA 200MHz 2SD1991A
1998 - 2SB1320A

Abstract: 2SD1991A
Text: Transistor 2SD1991A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1320A Unit: mm 0.15 0.65 max. 14.5±0.5 q High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 1.0 , Q R S hFE1 160 ~ 260 210 ~ 340 290 ~ 460 1 Transistor 2SD1991A PC - Ta , ­1 ­3 ­10 ­30 Emitter current IE (mA) ­100 Transistor 2SD1991A Cob - VCB


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PDF 2SD1991A 2SB1320A 270Hz 2SB1320A 2SD1991A
2003 - 2SB1320A

Abstract: 2SD1991A 2SB1320
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1991A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1320A Unit: mm M Di ain sc te on na tin nc ue e/ d 6.9±0.1 (4.0) 2.5±0.1 (0.8) ue pl d in an c se ed , 2SD1991A PC Ta IC VCE 60 Ta = 25°C 1 000 200 100 40 120 µA 100 µA 30 80 µA , /EC). 2SD1991A NV IC 240 10 200 8 6 4 160 VCE = 5 V f = 270 Hz 10 Rg


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PDF 2002/95/EC) 2SD1991A 2SB1320A 2SB1320A 2SD1991A 2SB1320
2003 - Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1991A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1320A (0.7) Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) (1.0) 3.5±0.1 Features · High forward current transfer ratio hFE · Low , with the RoHS Directive (EU 2002/95/EC). 2SD1991A PC Ta 500 60 IC VCE Ta = 25°C IB = 160 µA , SJC00234BED This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1991A Cob VCB


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PDF 2002/95/EC) 2SD1991A 2SB1320A
2003 - 2SD1991A

Abstract: 2SB1320A
Text: Transistors 2SD1991A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1320A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) Features · High forward current transfer ratio hFE · Low collector-emitter saturation voltage VCE(sat) · Allowing supply with the radial , . Publication date: April 2003 SJC00234BED 1 2SD1991A PC Ta IC VCE 60 Ta = 25°C 1 000 , °C 240 180 120 60 0 - 0.1 -1 -10 Emitter current IE (mA) -100 2SD1991A NV


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PDF 2SD1991A 2SB1320A 2SD1991A 2SB1320A
2SD2037

Abstract: 2SD2001 2SD1993 2SD1995 2sd2033 2SD1989 2sd2022 2SD1991A 2SD1992A 2SD1994A
Text: 1.4 35 100 80 40 320 4 1 1.5 4 0.4 2SD1991A «TF G A 60 50 0.1 0.4 1 20 160 460 10 0. 002 0. 5 0 , 2SD1991A 200* 10 -0.01 15 2SB1321A (MM) ECB 2SD1992A 200* IO -0. 002 m Ma* 150mV Gv=80dB/Rg


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PDF 2SD1988 2SD1989 2SD1990 2SD1991A 2SD1992A 2SD1993 2SD1994A 2SD1995 2SD2017 2SD2018 2SD2037 2SD2001 2sd2033 2sd2022 2SD1991A
NEC 2SD1564

Abstract: 2SC3296 2sd2394 2012 NEC 2SD1993 2sd1780 2SD1995 2SD1991R 2sd1855 2SC4488
Text: T T T T T if 2SC3253 2SD526 2SD743 2SD1134 2SD1991A 2SD1992A 2SC3581 2SD1778 2SC4778


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PDF 2SD1986 2SD1987 2SD1988 2SD1989 2SD1990 2SD1991 2SD1992 2SD1993 2SD1994 2SD1995 NEC 2SD1564 2SC3296 2sd2394 2012 NEC 2sd1780 2SD1991R 2sd1855 2SC4488
2SB1446

Abstract: 2SB642 2SD2458 2SD1995 2SD1993 2SD1010 2sc5335 2sb788 2SC2632 2SD1512
Text: Silicon Small Signal Transistors Application Functions SS-Mini Type (D1 ) I 2SB1462 # General-use Low Frequency Amplifiers and Others Package (No.) S-Mini Type (D5) ' 2SB1218A 2SD1819A : 2SB1219/A i 2SD1820/A Mini Type (D12) ! 2SB709A I 2SD601A i 2SB710/A i 2SD602/A New S Type (034) i 2SA1309A ! 2SC3311A 2SB1030/A i 2SD1423/A TO-92 (D46) M Type (D35) i 2SB642 I 2SD637 TO-92NL (D48) TO-92 L (047) Mini -Power Type (019) V ceo MT1 Type (037) ( 2SB1320A i 2SD1991A fr (MHz


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PDF 2SB1462 2SB1218A 2SD1819A 2SB1219/A 2SD1820/A 2SB709A 2SD601A 2SB710/A 2SD602/A 2SA1309A 2SB1446 2SB642 2SD2458 2SD1995 2SD1993 2SD1010 2sc5335 2sb788 2SC2632 2SD1512
2SC3998

Abstract: 2sc4640 4793 2sd637 2SC1815 2SD1546 C4463 2sc2555 4802 2SC4804
Text: - 199 - M « Type No. a « Manuf. H & SANYO Ä 2£ TOSHIBA 0 m NEC 0 iL HITACHI « ± a FUJITSU te T MATSUSHITA H S MITSUBISHI □ — A ROHM 2SC 4773 □ —A 2SC4406 2SC4244 2SC4463 2SC3932 2SC 4774 » □ —A 2SC4407 2SC4250 2SC4463 2SC4670 2SC 4775 □ —A 2SC1815 2SD637 2SC 4776 □ —A 2SC4640 2SC1815 2SD637 2SC 4777 □ —A 2SC4640 2SC1815 2SD1991A 2SC 4778 □ —A 2SC4640 2SC1815 2SD1991 2SC 4779 □ —A ZòU4b4U ZÜUZ4SÖ ¿ÓUOJiiñ


OCR Scan
PDF 2SC4406 2SC4244 2SC4463 2SC3932 2SC4407 2SC4250 2SC4670 2SC1815 2SD637 2SC3998 2sc4640 4793 2sd637 2SC1815 2SD1546 C4463 2sc2555 4802 2SC4804
2SD2458

Abstract: 2SD2434 2SD2436 2SB1600 2SB642 2SB1627 2SD2433 2SD1010 HOA1404-2 2SA1310
Text: l 2SD637 (2SB1320A I 2SD1991A 50 100 •160 -460 * 2 {2SB1219/A I 2SD1820/A f 2SB710/A I


OCR Scan
PDF O-92NL 2SB1462 2SD2216 2SB1218A I2SD1819A 2SB709A 2SD601A 2SB1627 I2SD2496 2SA1309A 2SD2458 2SD2434 2SD2436 2SB1600 2SB642 2SD2433 2SD1010 HOA1404-2 2SA1310
2SB1335A

Abstract: 2SB1333 2SD2021 2SB1320A 2SB1365 2SB1353 2sb1355 2SB1364 2sb1357 2SB1359
Text: « tt »1 S & ft 80* -10 0. 001 3. 5* 2SD1991A (MT-1) ECB 2SB1320A 200* -10 0.01 15


OCR Scan
PDF 2SB1320A 2SB1321A 2SB132ZA 2SB1323 2SB1324 2SB1325 2SB1326 2SD2027 O-220ABÂ 2SB1346 2SB1335A 2SB1333 2SD2021 2SB1365 2SB1353 2sb1355 2SB1364 2sb1357 2SB1359
1998 - 2SB1320A

Abstract: 2SD1991A
Text: Transistor 2SB1320A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD1991A Unit: mm 0.15 q High foward current transfer ratio hFE. Allowing supply with the radial taping. 1.0 q 0.8 s Features 1.05 2.5±0.1 (1.45) ±0.05 0.8 4.0 3.5±0.1 6.9±0.1 0.7 0.85 14.5±0.5 0.65 max. +0.1 0.45­0.05 (Ta=25°C) Ratings Unit Collector to base voltage VCBO ­60 V Collector to emitter voltage VCEO ­50


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PDF 2SB1320A 2SD1991A 270Hz 2SB1320A 2SD1991A
2SD2436

Abstract: 2SD2434 2SD2433 D49 transistor 2SC3312 2SD2529 2SD2458 2S897 2sb1446 2SD1995
Text: C2SA1309A [ 2SC3311A f2SB642 12SD637 C 2SB1320A I 2SD1991A 50 100 •160 -460 * 2 (2SB1219/A


OCR Scan
PDF O-92NL 2SB1462 I2SD2216 f2SB1218A I2SD1819A 2SB709A 12SD601A f2SB1627 I2SD2496 C2SA1309A 2SD2436 2SD2434 2SD2433 D49 transistor 2SC3312 2SD2529 2SD2458 2S897 2sb1446 2SD1995
2SB642

Abstract: 2SD2529 2SD1995 2SB1627 2SD1993 2SD1010 2SC3312 2SD2436 2SD1199 2sd661
Text: 2SB766/A 1.2SC1383/1384 I 2SD874/A f 2SB1440 12SD2185 ( 2SA777 ( 2SB1320A I 2SD1991A ! 2SB1321AA i


OCR Scan
PDF 2SB642 2SA1619/A 2SB1322A 2SB1462 12SD2216 2SB1218A 12SD1819A 2SB1219/A 2SA921 2SD2258 2SB642 2SD2529 2SD1995 2SB1627 2SD1993 2SD1010 2SC3312 2SD2436 2SD1199 2sd661
2003 - 2SB1320A

Abstract: 2SD1991A
Text: Transistors 2SB1320A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1991A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) Features (0.8) (1.0) 3.5±0.1 (0.7) 0.65 max. 14.5±0.5 (0.85) · High forward current transfer ratio hFE · Allowing supply with the radial taping Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO -60 V Collector-emitter voltage (Base


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PDF 2SB1320A 2SD1991A 2SB1320A 2SD1991A
2000 - 2SB1320A

Abstract: 2SD1991A
Text: Transistors 2SB1320A Silicon PNP epitaxial planer type Unit: mm 6.9±0.1 4.0 0.8 0.15 0.7 1.05 2.5±0.1 (1.45) ±0.05 0.8 1.0 I Features 3.5±0.1 For general amplification Complementary to 2SD1991A 0.85 14.5±0.5 0.65 max. · High forward current transfer ratio hFE · Allowing supply with the radial taping +0.1 2.5±0.5 1 Symbol Rating VCBO -60 V Collector to emitter voltage VCEO -50 V Emitter to base voltage VEBO -7 V Peak


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PDF 2SB1320A 2SD1991A 2SB1320A 2SD1991A
2000 - 2SB1320A

Abstract: 2SD1991A
Text: Transistors 2SB1320A Silicon PNP epitaxial planer type Unit: mm 6.9±0.1 4.0 0.8 0.15 0.7 1.05 2.5±0.1 (1.45) ±0.05 0.8 1.0 I Features 3.5±0.1 For general amplification Complementary to 2SD1991A 0.85 14.5±0.5 0.65 max. · High forward current transfer ratio hFE · Allowing supply with the radial taping +0.1 2.5±0.5 1 Symbol Rating VCBO -60 V Collector to emitter voltage VCEO -50 V Emitter to base voltage VEBO -7 V Peak


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PDF 2SB1320A 2SD1991A 2SB1320A 2SD1991A
2003 - 2SB1320A

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1320A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1991A Features · High forward current transfer ratio hFE · Allowing supply with the radial taping 0.65 max. (0.85) Unit: mm (0.7) 6.9±0.1 (4.0) (1.0) 3.5±0.1 2.5±0.1 (0.8) (0.8) Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage


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PDF 2002/95/EC) 2SB1320A 2SD1991A 2SB1320A
2003 - 2SB1320A

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1320A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1991A Features · High forward current transfer ratio hFE · Allowing supply with the radial taping 0.65 max. (0.85) Unit: mm (0.7) 6.9±0.1 (4.0) (1.0) 3.5±0.1 2.5±0.1 (0.8) (0.8) Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage


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PDF 2002/95/EC) 2SB1320A 2SD1991A 2SB1320A
2003 - 2SB1320A

Abstract: 2SD1991A
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1320A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1991A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur so a d t d e Pr od ty ni bo yp p c. u e e uc ne t l d tl ife t/s ate cy


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PDF 2002/95/EC) 2SB1320A 2SD1991A 2SB1320A 2SD1991A
Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1320A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1991A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) ■Features (0.85) 0.65 max. 14.5±0.5 pla d in ea ne clu se pla m d de vis ht ne ai ma s fo tp it f :// ol d d d nte inte llow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ


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PDF 2002/95/EC) 2SB1320A 2SD1991A
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