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ROHM Semiconductor
2SD1949T106R Trans GP BJT NPN 50V 0.5A 3-Pin UMT T/R - Tape and Reel (Alt: 2SD1949T106R) 2SD1949T106R ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet (3) 2SD1949T106R Reel 36,000 13 Weeks 3,000 - - - - $0.06231 More Info
2SD1949T106R Tape and Reel 0 17 Weeks, 1 Days 3,000 - - - - - More Info
2SD1949T106R Tape and Reel 0 9 Weeks, 2 Days 3,000 - - - - €0.11736 More Info
Allied Electronics & Automation 2SD1949T106R Bulk 0 280 - - - $0.144 $0.111 More Info
RS Components 2SD1949T106R Package 160 40 - - $0.344 $0.151 $0.151 More Info
element14 Asia-Pacific (2) 2SD1949T106R 0 1 $0.693 $0.487 $0.225 $0.172 $0.134 More Info
2SD1949T106R 0 1 $0.693 $0.487 $0.225 $0.172 $0.134 More Info
Farnell element14 (2) 2SD1949T106R 0 5 - £0.306 £0.129 £0.0808 £0.0688 More Info
2SD1949T106R 0 5 - £0.306 £0.129 £0.0808 £0.0688 More Info
ROHM Semiconductor
2SD1949T106Q Trans GP BJT NPN 50V 0.5A 3-Pin UMT T/R - Tape and Reel (Alt: 2SD1949T106Q) 2SD1949T106Q ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet 2SD1949T106Q Reel 0 13 Weeks 3,000 - - - - $0.0619 More Info
CoreStaff 2SD1949T106Q 2,879 $0.41 $0.34 $0.15 $0.11 $0.11 More Info
ROHM Semiconductor
2SD1949FRAT106R Trans GP BJT NPN 50V 0.5A 3-Pin SOT-323 T/R (Alt: 2SD1949FRAT106R) 2SD1949FRAT106R ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet 2SD1949FRAT106R Tape and Reel 0 12 Weeks, 2 Days 1 - - - - - More Info
ROHM Semiconductor
2SD1949T106R. Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:250MHz; Power Dissipation Pd:200mW; DC Collector Current:500mA; DC Current Gain hFE:120hFE; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes 2SD1949T106R. ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark element14 2SD1949T106R. Reel 0 3,000 $0.067 $0.067 $0.067 $0.067 $0.063 More Info

2SD1949 datasheet (13)

Part ECAD Model Manufacturer Description Type PDF
2SD1949 2SD1949 ECAD Model Kexin Medium Power Transistor Original PDF
2SD1949 2SD1949 ECAD Model ROHM Medium Power Transistor (50V, 0.5A) Original PDF
2SD1949 2SD1949 ECAD Model TY Semiconductor Medium Power Transistor - SOT-323 Original PDF
2SD1949 2SD1949 ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
2SD1949 2SD1949 ECAD Model Others Transistor Substitution Data Book 1993 Scan PDF
2SD1949 2SD1949 ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SD1949 2SD1949 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SD1949 2SD1949 ECAD Model ROHM EM3, UMT, SMT Transistors Scan PDF
2SD1949R 2SD1949R ECAD Model ROHM Epitaxial Planar NPN Silicon Transistor Scan PDF
2SD1949T106Q 2SD1949T106Q ECAD Model ROHM Medium Power Transistor (50 V, 0.5 A) Original PDF
2SD1949T106Q 2SD1949T106Q ECAD Model ROHM TRANS NPN 50V 0.5A SOT-323 Original PDF
2SD1949T106R 2SD1949T106R ECAD Model ROHM Medium Power Transistor (50 V, 0.5 A) Original PDF
2SD1949T106R 2SD1949T106R ECAD Model ROHM TRANS NPN 50V 0.5A SOT-323 Original PDF

2SD1949 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2SD1949

Abstract: No abstract text available
Text: h -7 > y 7, $ / T ransistors 2SD1484K/ 2SD1949 2SD1484K 2SD1949 1) » « E f c i f l E i i f t C U T i ' S o Xfcf£df-V7^U:7V - ^-fffc NPN y ^ > h 7 > y ^ ^ Epitaxial Planar NPN Silicon , 250 6.5 L S t 0 Item hFE (O : * « * p n a) R 180-390 Type 2SD1484K 2SD1949 hFE P 8 2 -1 8 0 , 2SD1484K/ 2SD1949 AM BIENT TEM P ERA TUR E : Ta CC) BASE TO VOLTAGE : V be (V) Fig.1 «¿H XA , ib (pF) E E 2SD1484K/ 2SD1949 a- «§ i « m » > i/i m I m < VlAVfOCO


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PDF 2SD1484K/2SD1949 2SD1484K 2SD1949 1484K 500mA 150mA, 500mA 2SD1949
2SD1484K

Abstract: 2SD1949 T106 T107 T146 T147
Text: h "7 > y 7. $ /Transistors 2SD1484K/ 2SD1949 2SD1484K 2SD1949 1) UTi^S, VcEO=50V, lc=500mA 2 , i'S^iS'ilflJ/Medium Power Amp. • Wfi^+Sia/Dimensions (Unit: mm) 2SD1484K 2.9±0.2 0.8±0.i 2SD1949 , T147 T106 T107 Type hFE 3000 3000 3000 3000 2SD1484K PQR O O - - 2SD1949 PQR - - O O noHm TßEfiTTT 0D11075 Dil 305 h "7 > y 7. $ /Transistors 2SD1484K/ 2SD1949 • «ftWf$tlAI8/Electncal , •ySt&iOWE-al'^«»»«: 306 noHm TflEfl'm 001107b TS6 h "7 > y 7. $ /Transistors 2SD1484K/ 2SD1949 5 10 20 50 100


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PDF 2SD1484K/2SD1949 2SD1484K 2SD1949 500mA 150mA, 2SD1484K SC-59 2SD1949 T106 T107 T146 T147
2008 - 2SD1484K

Abstract: 2SD1949 T106 T146
Text: 2SD1949 / 2SD1484K Transistors Medium Power Transistor (50V,0.5A) 2SD1949 / 2SD1484K Features 1) High current.(IC=0.5A) 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. Absolute maximum rationgs (Ta=25 C) Symbol VCBO Limits Unit 50 V , =0A , f=1MHz Packaging specifications and hFE Type 2SD1949 2SD1484K Package hFE UMT3 , 180 to 390 Rev.D 1/2 2SD1949 / 2SD1484K Transistors Electrical characteristic curves


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PDF 2SD1949 2SD1484K 150mA 2SD1484K T106 T146
2011 - 2SD1949

Abstract: No abstract text available
Text: specifications and hFE 2SD1949 2SD1949FRA UMT3 Marking Code Basic ordering unit (pleces) 2SD1484K , Data Sheet AEC-Q101 Qualified Medium Power Transistor (50V,0.5A) 2SD1949FRA / 2SD1484KFRA 2SD1949 / 2SD1484K Features 1) High current.(IC=0.5A) 2) Low saturation voltage, typically VCE(sat , www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.06 - Rev. E Data Sheet 2SD1949 / 2SD1484K 2SD1949FRA / 2SD1484KFRA Electrical characteristic curves 100 200 1000 0.50 VCE


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PDF AEC-Q101 2SD1949FRA 2SD1484KFRA 2SD1949 2SD1484K 150mA SC-70) OT-323> SC-59) OT-346>
2005 - 2SD1484K

Abstract: 2SD1949 T106 T146
Text: 2SD1949 / 2SD1484K Transistors Medium Power Transistor (50V,0.5A) 2SD1949 / 2SD1484K Features 1) High current.(IC=5A) 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. Absolute maximum rationgs (Ta=25 C) Symbol VCBO Limits Unit 50 V , =10V , IE=0A , f=1MHz Packaging specifications and hFE Type 2SD1949 2SD1484K Package hFE , ) 3000 3000 Danotes hFE Rev.B 1/2 2SD1949 / 2SD1484K Transistors Electrical


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PDF 2SD1949 2SD1484K 150mA 2SD1484K T106 T146
2004 - Not Available

Abstract: No abstract text available
Text: Transistors 2SD1949 / 2SD1484K Medium Power Transistor (50V,0.5A) 2SD1949 / 2SD1484K Features 1) High current.(IC=5A) 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. Absolute maximum rationgs (Ta=25 C) Parameter Collector-base voltage Collector-emitter voltage , Basic ordering unit (pleces) Danotes hFE 2SD1949 UMT3 QR Y T106 3000 2SD1484K SMT3 QR Y T146 3000 1/2 Transistors Electrical characteristic curves 200 VCE=6V 2SD1949 / 2SD1484K 100


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PDF 2SD1949 2SD1484K 150mA
1998 - 2Sc3359

Abstract: 2SC1741S 2SC3359S 2SD1484K 2SD1949
Text: Transistors 2SD1949 / 2SD1484K / 2SC1741S 2SC3359S (96-678-D15) (SPEC-D16) 318 ROHM


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PDF 2SD1949 2SD1484K 2SC1741S 2SC3359S 96-678-D15) SPEC-D16) 2Sc3359 2SC1741S 2SC3359S
Not Available

Abstract: No abstract text available
Text: h 7 > y ^ ^ / T ransistors 2SD1484K 2SD1949 2SD1484K/ 2SD1949 7 ) V f \ s —M Z - i W W b 7 $ - t - J l s K N PN y 'J is h y y y Z Z 4,® ^ )iil fflffl/Meclium Power Amp. ll 1 1 Epitaxial Planar Super/Ultra Mini-Mold NPN Silicon Transistors • ^H i5 ^ J "jtl3 /D im e n s io n s (U n it: mm) 1 ) VCeo = 50V, lc = 5 0 0 m A £ ;S f l/ ± ± L T t '- 5 0 2) VCE(sa,)tf , S * lg ;± # e ( fl) T146 T147 T106 T107 PQR ^ 000 3 000 3 000 3 000 - 2SD1949


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PDF 2SD1484K 2SD1949 2SD1484K/2SD1949 150mA, 500mA 1484K
2011 - Not Available

Abstract: No abstract text available
Text: Data Sheet Medium Power Transistor (50V,0.5A) 2SD1949 / 2SD1484K Features 1) High current.(IC=0.5A) 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. Dimensions (Unit : mm) UMT3 (SC-70) (1) Emitter (2) Bace (3) Collector Absolute maximum rationgs (Ta=25 C , Type Package hFE Marking Code Basic ordering unit (pleces) Danotes hFE 2SD1949 UMT3 QR Y T106 3000 , 0.3Min. 2SD1949 / 2SD1484K Data Sheet Electrical characteristic curves 200 VCE=6V 100


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PDF 2SD1949 2SD1484K 150mA SC-70) OT-323> SC-59) OT-346> R1120A
2011 - Not Available

Abstract: No abstract text available
Text: Data Sheet Medium Power Transistor (50V,0.5A) 2SD1949 / 2SD1484K Features 1) High current.(IC=0.5A) 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. Dimensions (Unit : mm) UMT3 (SC-70) (1) Emitter (2) Bace (3) Collector Absolute maximum , =1MHz Packaging specifications and hFE Type 2SD1949 2SD1484K Package hFE UMT3 SMT3 QR QR , www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.06 - Rev. E 2SD1949 / 2SD1484K


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PDF 2SD1949 2SD1484K 150mA SC-70) OT-323> SC-59) OT-346> R1120A
2011 - Not Available

Abstract: No abstract text available
Text: Data Sheet Medium Power Transistor (50V,0.5A) 2SD1949 / 2SD1484K Features 1) High current.(IC=0.5A) 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. Dimensions (Unit : mm) UMT3 (SC-70) (1) Emitter (2) Bace (3) Collector Absolute maximum rationgs (Ta=25 C , specifications and hFE Type Package hFE Marking Code Basic ordering unit (pleces) Danotes hFE 2SD1949 UMT3 , 2011.06 - Rev. E 0.3Min. 2SD1949 / 2SD1484K Data Sheet Electrical characteristic curves 200


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PDF 2SD1949 2SD1484K 150mA SC-70) OT-323> SC-59) OT-346> R1120A
2SD1949

Abstract: No abstract text available
Text: 2SD1949 NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product FEATURES SOT-323 A Dim VCE(sat)=0.1V at IC / IB=150mA / 15mA 1 2 V G 1.150 1.350 C B S 2.200 B 3 Top View Max 1.800 0.800 1.000 D * Low saturation voltage, typically Min A L * High current.(IC=5A) 0.300 0.400 G 2 EMITTER , YR Any changing of specification will not be informed individual Page 1 of 4 2SD1949 NPN


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PDF 2SD1949 OT-323 150mA 01-Jun-2002 2SD1949
2SD1959

Abstract: 2SB1301 2SD1951 2SD1948 2SD1940 2sd1951b 2SD1946 2SD1947 2SD1949 2SD1950
Text: 500 1500 1 1 0. 3 1.2 3 0.03 2SD1949 □ — a PA 50 50 0.5 0.2 0.5 30 82 390 3 0.1 0.4 0.15 0.015 , 2SD1948 250* 5 0.02 5* (SC-70 (UMT) ) EBC 2SD1949 150 10 0.5 35 SC-62 - 2SD1950 100 10


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PDF 2SD1940 2SD1941 2SD1943 2SD1944 2SD1946 2SD1947 2SD1948 2SD19CE 2SD1964 O-126) 2SD1959 2SB1301 2SD1951 2SD1948 2SD1940 2sd1951b 2SD1947 2SD1949 2SD1950
Not Available

Abstract: No abstract text available
Text: 2SD1949 / 2SD1484K / 2SC1741S 2SC3359S Transistors Medium Power Transistor (50V, 0.5A) I 2SD1949 / 2SD1484K / 2SC1741AS •Features •Absolute maximum ratinga (Ta=25t) 1 ) H ig h c u r r e n t , ( k — 0 .5 A ) 2 ) L o w V c e (w i >. ( T y p . 0 . 1 V Parameter a t I c / I b *= 1 5 0 /1 5 m A ) Symbol Emitter-base voltage Collector current Type 2SD1949 2SD1464K UMT9 QR SMT3 0.2 0.3 ■n Tsta 150 —5 5 — 150 r QR T146 3000 V


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PDF 2SD1949 2SD1484K 2SC1741S 2SC3359S 2SC1741AS 2SD1949 2SD1464K 2S01949
2SD1949

Abstract: 8086 BF 212 transistor datasheet tr 212 3818
Text: SPICE PARAMETER 2SD1949 by ROHM TR Div. * Q2SD1949 NPN BJT model * Date: 2006/12/06 .MODEL Q2SD1949 NPN + IS=43.522E-15 + BF=212.62 + VAF=100 + IKF=1.1384 + ISE=43.554E-15 + NE=1.4099 + BR=10.166 + VAR=100 + IKR=71.304E-3 + ISC=19.105E-12 + NC=1.8086 + NK=.87081 + RE=.1 + RB=3.7985 + RC=.12522 + CJE=40.045E-12 + MJE=.34085 + CJC=13.820E-12 + MJC=.38184 + TF=192.81E-12 + XTF=140.05 + VTF=32.781 + ITF=.79171 + TR=99.284E-9 + XTB=1.5000 -


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PDF 2SD1949 Q2SD1949 522E-15 554E-15 304E-3 105E-12 045E-12 820E-12 81E-12 2SD1949 8086 BF 212 transistor datasheet tr 212 3818
1998 - 2SC3359

Abstract: 2SC1741S 2SC3359S 2SD1484K 2SD1949
Text: Transistors 2SD1949 / 2SD1484K / 2SC1741S 2SC3359S (96-678-D15) (SPEC-D16) 318 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered


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PDF 2SD1949 2SD1484K 2SC1741S 2SC3359S 96-678-D15) SPEC-D16) 2SC3359 2SC1741S 2SC3359S
Not Available

Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification 2SD1949 Features High current.(IC=5A) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 0.5 A Collector power dissipation PC 0.2 W


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PDF 2SD1949 150mA -20mA 100MHz 150mA/15mA
2SD1949

Abstract: R Y SMD TRANSISTOR
Text: Transistors IC SMD Type Medium Power Transistor 2SD1949 Features High current.(IC=5A) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 0.5 A Collector power dissipation PC 0.2 W


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PDF 2SD1949 150mA 50Min -20mA 100MHz 150mA/15mA 2SD1949 R Y SMD TRANSISTOR
te 1819

Abstract: 2SD1878 2sd1856 2SC4211 2SD1649 2SC4331 2SD1929 2SD1834 2sd1707 2SC4723
Text: 2SC4723 2SC4081 2SC4097 2SD1949 2SC4102 2SC4097 2SD1276 2SD1277 2SD1276 2SD1933 2SD2025 ft # ft


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PDF 2SD1813 2SD1814 2SD1667 2SD1406 2SD2107 2SD2105 2SD1267 2SD1445A 2SD1250 2SC4331 te 1819 2SD1878 2sd1856 2SC4211 2SD1649 2SD1929 2SD1834 2sd1707 2SC4723
1998 - SC-75A

Abstract: 2SA1577 2SC4102
Text: preamplifier TË 50 120 2SC4774 RF switch BMË 50 6 2SD1949 driver YË 500 50 BC848BW general purpose G1K 100 30


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PDF SC-75A 2SC4617 2SC4618 2SC4725 2SC4726 2SC4997 SC-70 2SC4081 2SC4082 2SC4083 2SA1577 2SC4102
Tr 2SA1576

Abstract: 2SC4649 2sb1051
Text: 2SC4326LK 2SC4713K 2SC3082K 2SC3802K 2SC3837K 2SC3838K 2SC3839K 2SC4097 2SD1949 - - - - - . . _ .


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PDF OT-23, SC-59) 2SC4619 2SC4725 2SC4726 Tr 2SA1576 2SC4649 2sb1051
1998 - c102 TRANSISTOR

Abstract: 2N3904 A41 transistor c102 c101 TRANSISTOR TRANSISTOR 246 transistor c101 2n2222+331+transistors 2SC4043 TRANSISTOR 618 c102, transistor
Text: / 2SC2413K / 2SC2058S (SPEC-C131) (96-161-C26) 310 Transistors 2SD1949 / 2SD1484K / 2SC1741S


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PDF 2SA1036K 2SA1577 2SA854S 500mA 2SC2411K 2SC1741S 2SC4097. 96-86-B11) c102 TRANSISTOR 2N3904 A41 transistor c102 c101 TRANSISTOR TRANSISTOR 246 transistor c101 2n2222+331+transistors 2SC4043 TRANSISTOR 618 c102, transistor
RK7002

Abstract: 2sd2142
Text: 2SC4998 2SC4081 2SC4102 2SC4097 2SD1949 2SD2351 PNP SMT3 NPN 10 50 120 150 15 32 32 50 80 15 32 #32 300 50


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PDF 2SK2503 RK7002 2SB1590K 2SD2444K 2SA1036K 2SC2411K 2SB1197K 2SD1781K 2SD1484K 2SB1198K 2sd2142
Not Available

Abstract: No abstract text available
Text: Transistors 2SD1949 / 2SD1484K / 2SC1741S 2SC3359S · F eatu res 1 ) High cu rre nt (Ic ^ O . S A ) 2 ) Low VcE{sat). (Typ. 0 .1 V at Ic /Ib = 150/15m A ) I M edium Pow er T ran sistor (50V, 0.5A) · A b s o l u t e m a x im u m r a tin g s (T a = *2 5 ÌD ) Parameter Col lectof-base voltage CoHector-emitter voltage Emitter-base voltage Collector current Collector power 2 5 D 1 9 4 9 ,2 S D 1 4 8 4 K dissipation 2SC1741AS Junction temperature 2SD1484K SM T3 QR Y* T14 6 3000 2SC1741AS SPT


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PDF 2SD1949 2SD1484K 2SC1741S 2SC3359S 150/15m 2SC1741AS
jd 1803

Abstract: otc114 2SD1834 E2p 93 transistor B14A DTC143ZKA transistor marking w9 UMW10 marking code g4c MDC02
Text: 2SC4912 NP 2SC4998 2SD1949 PQR 2SD2351 uvw DTA113TUA DTA113ZUA DTA114EUA DTA114GUA DTA114TUA DTA114WUA , 2SA1576A 2SA1577 2SC4099 2SC4081LN 2SA1579 2SC4100 2SC4102 2SD1949 DTC143TUA DTC114TUA DTC124TUA DTC144TUA


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PDF 2SA1774 2SA1821 2SA1885 2SC4617 2SC4618 2SC4619 2SC4649 2SC4725 2SC4726 2SC4997 jd 1803 otc114 2SD1834 E2p 93 transistor B14A DTC143ZKA transistor marking w9 UMW10 marking code g4c MDC02
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