The Datasheet Archive

2SD1935-7 datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
2SD1935-7 2SD1935-7 ECAD Model Others Transistor Shortform Datasheet & Cross References Scan PDF

2SD1935-7 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: 2SD1935-7 Transistors Si NPN LP HF BJT Military/High-RelN V(BR)CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)800m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)12 h(FE) Min. Current gain.300 h(FE) Max. Current gain.600 @I(C) (A) (Test Condition)50m @V(CE) (V) (Test Condition)2.0 f(T) Min. (Hz) Transition Freq200M @I(C) (A) (Test Condition)50m @V(CE) (V) (Test Condition)2.0 V(CE)sat Max. (V)200m @I(C) (A) (Test Condition


Original
PDF 2SD1935-7 Freq200M
IGBT M16 100-44

Abstract: Ericsson RBS 6102 ASEA HAFO AB GM378 Transistor B0243C Kt606 Ericsson SPO 1410 SEMICON INDEXES transistor 8BB smd tr/NEC Tokin 0d 108
Text: No file text available


OCR Scan
PDF W211d W296o W211c IGBT M16 100-44 Ericsson RBS 6102 ASEA HAFO AB GM378 Transistor B0243C Kt606 Ericsson SPO 1410 SEMICON INDEXES transistor 8BB smd tr/NEC Tokin 0d 108
Supplyframe Tracking Pixel