The Datasheet Archive

2SD1919 datasheet (7)

Part ECAD Model Manufacturer Description Type PDF
2SD1919 2SD1919 ECAD Model ROHM Medium Power Transistor (32V, 2A) Original PDF
2SD1919 2SD1919 ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
2SD1919 2SD1919 ECAD Model Others Transistor Substitution Data Book 1993 Scan PDF
2SD1919 2SD1919 ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SD1919 2SD1919 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SD1919 2SD1919 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SD1919 2SD1919 ECAD Model ROHM FTR, FTL Transistors, Low Profile Scan PDF

2SD1919 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2SD1189F

Abstract: 2SB1240 2SD1227M 2SD1055 2SD1919 2SD1862 2SD1766 2SD1758 LL1000 g 2SB911M
Text: — 390 Vce=3V, lc=0.5A * transfer ratio 2SD1055 180 _ 390 2SD1919.2SD1227M 120 — 270 , / 2SD1919 /2SD1227M •Features 1) LOW VcE(sat). VcE(sai) = 0.16V (Typ.) (IC/IB = 2A/0.2A) 2) Complements , -126FP 2SD1919 (1) Emitter (2) Collector (3) Base ROHM : FTL Q (1) Emitter (2) Collector (3) Base , 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/ 2SD1919 /2SD1227M •Absolute maximum ratings (Ta = 25t , =1MHz * Measured using pulse current. noHm 243 Transistors 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/ 2SD1919


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PDF 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/2SD1227M 2SB1188/2SB1182/2SB1240/2SB 891F/2SB822/2SB1277/2SB911M 2SD1758 SC-63 2SD1189F O-126FP 2SD1919 2SD1766 2SD1189F 2SB1240 2SD1227M 2SD1055 2SD1919 2SD1862 2SD1766 2SD1758 LL1000 g 2SB911M
2SD1766

Abstract: 2SD1919 2SD1862 05SL 2SD1227M 96-217-B24 2SD1055
Text: 2SD1919.2SD1227M - 0.5 100 30 270 0.8 - - V MHz pF Ic/Ib=2A /0.2A * Collector-emitter saturation , Transistors Medium Power Transistor (32V, 2A) 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/ 2SD1919 , o) (2 ) o } (1) Emitter (2) Collector (3) Base 2SD1227M 2SD1919 r-~ 2.4 ±0.2 n (1 , Collector current Symbol VcBO VcEO V ebo 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/ 2SD1919 /2SD1227M , /2SD1189F/ 2SD1055/ 2SD1919 /2SD1227M Taping TL 2500 - TV2 2500 - - - 1000 - - - Bulk - 2000 -


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PDF 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/2SD1227M SC-62 2SD1766 2SD1758 2SD1766) 2SD1758) 2SD1862, 2SD1227M) 2SD1189F) 2SD1766 2SD1919 2SD1862 05SL 2SD1227M 96-217-B24 2SD1055
2sd1919

Abstract: 2sb1277
Text: h 7 > ' / X $ / T ransistors 2SD1055/ 2SD1919 2 SD 1055 Xtf^^'>T;U °U-^NPN '>U h >y'X$ 7 =I> 7 O Q H IQ ^ Q Power Amp. Epitaxial Planar NPN Silicon Transistors • ^ -J F ^ S E I/D im e n , 2SD1055 PQ R © o - - 2SD1919 528 h FE PQR - - (^ {~ ) RDHm hz7 > y X £ /Transistors 2SD1055/ 2SD1919 M,ANiTDCnro Vf Si V; V vll -T • SsitfJ!f , ) /Transistors TRANSITION FREQUENCY : f t (MH 2 } 2SD1055/ 2SD1919


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PDF 2SD1055/2SD1919 160mV 2SB822/ 2SB1277 2SB882, 2SB1277. 2SD1055/ 2SD1919 2sd1919 2sb1277
2SD1055

Abstract: ITS40 sb822 2SD1919
Text: /T r a n s is to r s 2SD1055/ 2SD1919 2SD1055 1) FTR / f .y *T v i- T , Pc = 0 . 7 5 W ( 7 ) * a i * ? i . 5 , x£°$*yyJl'yis-tMNPN y'J = i> Epitaxial Planar NPN Silicon Transistors 41^ ^ i S llliffl/M edium Power Amp. · ^}fi`+ > i0 /D im e n s io n s ( U n it : mm) I c p = 2 .5 A 2) VcE , 2SD1919 hFE if i 3 > rt TTL2 £ > 7 Item hFE % 2000 C1 TL3 2500 ' TL4 2500 - , f lW t S f iil/ E le c t r ic a l Characteristic Curves 2SD1055/ 2SD1919 AMBIENT TEMPERATURE


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PDF 2SD1055/2SD1919 2SD1055 822/2S 2SB882, 2SB1277. ym2000 2SD1055 ITS40 sb822 2SD1919
1998 - TRANSISTOR D400

Abstract: D400 npn transistor D400 transistor TRANSISTOR NPN D400 D400 npn transistor D302 2SB911 high hfe transistor 2sd2166 Transistor PNP VCEO 400V
Text: .) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 , Power Transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / 2SD1919 / 2SD1227M FFeatures 1) Low , _C) 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / 2SD1919 / 2SD1227M FElectrical characteristics (Ta = 25 , / 2SD1919 / 2SD1227M hFE values are classified as follows : FElectrical characteristic curves 258 Transistors 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / 2SD1919 / 2SD1227M 259 Transistors Power


Original
PDF 2SA1807 2SA1862 96-102-A331) 96-109-A343) 2SA1812 2SA1727 2SA1776 96-609-A313) 2SA1834 2SC5001 TRANSISTOR D400 D400 npn transistor D400 transistor TRANSISTOR NPN D400 D400 npn transistor D302 2SB911 high hfe transistor 2sd2166 Transistor PNP VCEO 400V
1998 - 2SD1758

Abstract: 2SB1240 2SD1919 96-217-B24 2SD1055 2SD1227M transistor 257 2SB1188 2SB911 2SB891F
Text: Transistors Medium Power Transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / 2SD1919 / 2SD1227M FFeatures 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M FExternal dimensions (Units: mm , / 2SD1758 / 2SD1862 / 2SD1055 / 2SD1919 / 2SD1227M FAbsolute maximum ratings (Ta = 25_C) FElectrical , / 2SD1919 / 2SD1227M Transistors 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / 2SD1919 / 2SD1227M 259


Original
PDF 2SD1766 2SD1758 2SD1862 2SD1055 2SD1919 2SD1227M 2SB1188 2SB1182 2SB1240 2SB891F 96-217-B24 2SD1227M transistor 257 2SB911
2SD1189F

Abstract: 2SD1919 N-P-N SILICON POWER TRANSISTORS TO-126 ll1000 2sd1055r 2sd1227m 2SD1055 two transistors 2SD1766 2SD1758
Text: 2SD1919.2SD1227M 120 — 270 Collector-emitter saturation voltage VCE(sat) — 0.5 0.8 V Ic/Ib=2A/0.2A , Transistors Medium Power Transistor (32V, 2A) 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/ 2SD1919 , ) Base 2SD1919 ROHM : FTL (1) Emitter (2) Collector (3) Base ^External dimensions (Units: mm) 2SD1766 ?f , -B24 Transistors 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/ 2SD1919 /2SD1227M •Absolute maximum ratings fia = 25 , 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/ 2SD1919 /2SD1227M •Packaging specifications and hre Package


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PDF 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/2SD1227M 2SB1188/2SB1182/2SB1240/2SB 2SB822/ 2SB1277/2SB911M 2SD1758 SC-63 2SD1189F O-126FP 2SD1919 N-P-N SILICON POWER TRANSISTORS TO-126 ll1000 2sd1055r 2sd1227m 2SD1055 two transistors 2SD1766
1998 - D352 transistor

Abstract: transistor D406 transistor d228 D348 transistor TRANSISTOR D405 D352* transistor transistor b228 96-596-A74 9697a transistor D212
Text: .) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 , Transistors Medium Power Transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / 2SD1919 / 2SD1227M , _C) 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / 2SD1919 / 2SD1227M FElectrical characteristics (Ta = 25 , / 2SD1919 / 2SD1227M hFE values are classified as follows : FElectrical characteristic curves 258 Transistors 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / 2SD1919 / 2SD1227M 259 Transistors 2SD1834


Original
PDF 2SA1759 2SC4505 2SC4620 96-97-A324) 96-178-C300) 2SA1797 2SB1443 2SC4672 96-100-B208) 96-181-D208) D352 transistor transistor D406 transistor d228 D348 transistor TRANSISTOR D405 D352* transistor transistor b228 96-596-A74 9697a transistor D212
2sb882

Abstract: 2sd1055 2SB822
Text: ROHM CO LTD h 7 > y ' 7 $ / I ransistors 4GE j> 7620=^ OGQSÖEtj 7 IH RHM 2 S D 1 0 5 5 /2 S D 1 9 1 9 T - 'T -2 7 -/S ' 2SD1055 2SD1919 ·«ft I t f ^ ^ V ^ ; U 7 ° U - ^ N P N /Medium Power Amp. Epitaxial Planar NPN Silicon Transistors · WMrj-^S/Dim ensions (Unit : mm) 1) FTR Icp=2.5A P c = 0 . 7 5 W £ > * f t , h m m m è T ifi hFE IB^Type 2SD1055 2SD1919 ci TL2 TL3 hFE PQR PQR 1 000 4


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PDF 2SD1055 2SD1919 160mV 2SB822/2SB1277fc3 160mV 2SB882, 2SB1277. 2sb882 2SB822
2SD1055

Abstract: 2SB1277
Text: voltage: VcE(sat)=-0.2V(Typ.) (IC/ I b = - 1 A / - 0 . 1 A ) 3) Complementary pair with 2SD1055, 2SD1919. , Is "7 > y X £ /Transistors 2SB822/2SB1277 2SB822 2SB1277 P c = 0.75W h 7 > y ^ ^ Epitaxial Planar PNP Silicon Transistors Power Amp. · ÿ l-Jfi'+ iiE ül/D im ension s (U nit : mm) 1) FTR, F T L / < 7 ^ - v C T , I c m = - 3A, 3) 2SD1055/ 2SD1919 5» t 3 > 7 U7 & · Features


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PDF 2SB822/2SB1277 2SB822 2SB1277 2SD1055/2SD1919 2SD1055, 2SD1919. 2SD1055 2SB1277
B1277

Abstract: 2sd1055
Text: voltage: V CE(sai)= 200mV (Typ.) (at 1A) 3) Complementary pair with 2SD1055, 2SD1919. · Absolute Maximum , , 2) Low V c e (sat )T? è 5 O 200mV Typ. (at 1A) 3) 2SD1055/ 2SD1919 fc > · Features f \) 0 S B


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PDF 00QS4T1 200mV 2SD1055/2SD1919 200mV 2SD1055, 2SD1919. 2SB822/2SB B1277 2sd1055
2SD1915

Abstract: 2SD1899-Z T0-220MF 2SD1897 2SD1896 2SD1895 2SD1894 2SD1893 2SD1892 2SD1891
Text: 20 0.3 0.3 0.1 50 500 2500 2 0. 004 0.1 0. 03 0. 003 2SD1919 b —a PA 40 32 2 0.75 1 20 82 390 3 , * 2SB1277 (FTL) ECB 2SD1919 50 5 0.05 30 (FTL) ECB 2SD1920 250* 5 0.02 5* (FTL) ECB


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PDF EPHTc-25 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895 2SD1896 2SD1897 2SD1912 2SB1274 2SD1915 2SD1899-Z T0-220MF
1998 - transistor

Abstract: 2sb1240 SD1227 2SD1189F 2SB1277 2SB822 transistor 2SB1240 2SB1182 2SB1188 silicon pnp transistor
Text: Transistors Medium power Transistor(*32V,*2A) 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. FExternal dimensions (Unit: mm) FStructure Epitaxial planar type PNP silicon transistor (96-131-B24) 215 Transistors FAbsolute maximum ratings (Ta = 25_C) FElectrical characteristics (Ta = 25_C) 216 2SB1188 / 2SB1182


Original
PDF 2SB1188 2SB1182 2SB1240 2SB822 2SB1277 2SB911M 2SD1766 2SD1758 2SD1862 2SD1189F transistor SD1227 transistor 2SB1240 silicon pnp transistor
2SC269

Abstract: 2SD1961 2SD1590 2sc3667 2sd1926 2SD1565 2SC4351 2SC2274 2SC2690A 2SC3243
Text: - 254 - m 2SD1918 2SD1919 2SD1920 % tt Mantif. - A - A - A % SANYO 2SC4027 2SD1246 2SD545 2SC2274 M TO SHIBA 2SC3667 2SC3666 2SC3665 B NEC m. T y p e No. B 31 HITACHI * ± a FU JITSU & T MATSUSHITA 2SD1771 2SD1244 2SD1330 2SD639 = MITSUBISHI m - ROHM A 2SC2690A m 2SC3243 2SC3581 1921 ^ - A B B CD 2SD 1922 2SD 1923 2SD 1924 2SD 1925 2SD 1926 2SD 1927 2SD 1928 2SD 1929 * 2SD 1930 E 2SD 1931 2SD 1932 ±L 31 & tL 2


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PDF 2SD1918 2SD1919 2SD1920 2SC4027 2SD1246 2SD545 2SC2274 2SC3667 2SC3666 2SC3665 2SC269 2SD1961 2SD1590 2sd1926 2SD1565 2SC4351 2SC2274 2SC2690A 2SC3243
Not Available

Abstract: No abstract text available
Text: 2SA1554 2SA1561A 2SC4038 2SC4777 2SA1559 2SA1560 2SB1277 2SB1278 2SB1279 2SC4037 2SC4040 2SD1919 2S01921


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PDF 2SA937ALN 2SB821 2SC1613A 2SC2021LN 2SA785 2SA937A 2SC2021 2SC4775 2SA874 2SA881
2SA785

Abstract: 2SC2673 2SB821 2SA1561 2sa881 2sa790
Text: 2SC4038 E 372SC4777 2SA1559 2SA1560 2SB1277 2SB1278 2SB1279 2SC4037 2SC4040 2SD1919 2SD1921 2SD2169


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PDF 2SB821 2SD1469 2SA806 2SC1615 2SA790 2SC1545 2SD2145 2SD2312 2SA785 2SC2673 2SB821 2SA1561 2sa881
2SB1277

Abstract: 2SB822
Text: o m plem e n ta ry pair w ith 2SD1055, 2SD1919. · Absolute Maximum Ratings (T a = 2 5 `C


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PDF 2SB822/2SB1277 2SB822 200mV 2SD1055, 2SD1919. 2SB1277
2S6822

Abstract: 2s6822 TRANSISTOR 2sa790 2sc2673 2SB1276 2SA937ALN A2SB1276 2SA785 2SA1561A 2SA1554
Text: 1000 - 600 82—390 P Q R 3 100 - 2SD1055 2SD1919 32 2000 2500 750 82—390 P Q R 3 500 - 2SD1787


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PDF 2SA937ALN 2SB821 2SB1276 2SC1613A A2SC4034 2SC2021LN 2SA785 2SA1554 2SA937A 2SA1561A 2S6822 2s6822 TRANSISTOR 2sa790 2sc2673 A2SB1276
2sd1469

Abstract: No abstract text available
Text: - 2SC2673 2SC4040 32 1000 - 600 82—390 3 100 - 2SD1055 2SD1919


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PDF 2SB1276 2SC1613A 2SC4034 2SC2021LN 2sd1469
2SD2175

Abstract: No abstract text available
Text: 2SA1559 2SA1S60 2SB1277 2SB1278 2SB1279 2SC4037 2SC4040 2SD1919 2S01921 2S02169 2SD2175 2SB1428 2SD1920


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PDF 2SA937ALN 2SB821 2SC1613A 2SC2021LN 2SA785 2SA937A 2SC2021 2SC4775 2SA874 2SA881 2SD2175
IC 7555

Abstract: ftr 02 2SA785 2SA1555 7555 ic 2sa155 2sa790 2SA1554 2sc2673 2SA937ALN
Text: 2SC4040 32 1000 - 600 82~390 3 100 - 2SD1055 2SD1919 32 2000 2500 750 82~390 3 500 - 2SD1787 2SD1921


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PDF 2SA937ALN 2SB821 W2SB1276 2SC1613A W2SC4034 2SC2021LN 2SA785 2SA1554 2SA937A 2SA1561A IC 7555 ftr 02 2SA1555 7555 ic 2sa155 2sa790 2sc2673
2SA785

Abstract: 2sc2673 2SB821 2SC2021 2SC1613A 2SA937ALN 2SD1469 2SA1561A 2SA1554 2SC4040
Text: 1000 - 600 82-390 P Q R 3 100 - 2SD1055 2SD1919 32 2000 2500 750 82—390 P Q R 3 500 - 2SD1787


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PDF 2SA937ALN 2SB821 ir2SB1276 2SC1613A VV2SC4034 2SC2021LN 2SA785 2SA1554 2SA937A 2SA1561A 2sc2673 2SC2021 2SD1469 2SA1554 2SC4040
strobo

Abstract: No abstract text available
Text: NPN 2SD1919 PNP 2SB822 FTR I NPN 2SD1055 VCEO (V) 32 lc (A) 2 P c (W) Ta=25'C 0.75 hFE Width 82- 390


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PDF 2SA933AS 2SA854S 2SA1515S 2SA1585S 2SA821S 2SA830S 2SC1740S 2SC1741S 2SC1741AS 2SC3359S strobo
Not Available

Abstract: No abstract text available
Text: 2SD1919 2SD1921 2SD2169 2SD2175 2SB1428 25D1920 2SD2154 2SA1558 2SC4036 2SA1565 2SC4032 2SD2191 2SD2314


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PDF 2SA937ALN 2SB821 2SC1613A
2SB1306

Abstract: 2sb1318 2SB1273 2SB1272 2SB1271 2SB1270 2SB1269 2SB1268 2SB1267 2SD1832
Text: ) ECB 2SB1276 100* -5 -0.5 50* 2SD1919 (FTL) ECB 2SB1277 100* -10 -0.05 20 (FTL) ECB


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PDF 2SB1267 2SB1268 2SB1269 2SB1270 2SB1271 2SB1272 2SD1936 2SB1296 2SD1937 O-92NL) 2SB1306 2sb1318 2SB1273 2SB1270 2SB1268 2SD1832
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