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2SD1918F5 datasheet (2)

Part ECAD Model Manufacturer Description Type PDF
2SD1918F5 2SD1918F5 ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SD1918F5 2SD1918F5 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF

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2SD1918F5

Abstract: 2SD2211 2SD1918 FRI02 2SB1275 T100 Z100 k50z
Text: h "7 > V 7s £/Transistors 2SD2211 / 2SD1918F5 2SD2211 2SD1918F5 Epitaxial Planar NPN Silicon Transistor Freq. Power Amp. 1) iSHIETJfeSo BVcEO=160V 2) SOAtfE^o 3) frfr'SK, Cob 4) 2SB1275 • Features 1) High breakdown voltage: BVceo=160V 2) Wide SOA 3) High transition frequency, and low output capacitance. 4) Complementary pair with 2SB1275. • ítJfN-jíEa/Dimensions (Unit : mm) 2SD1918F5 ROHM : CPT F5 , II S <0 —k 00 ■n en h 7 > "y X $ /Transistors 2SD2211 / 2SD1918F5 0.10.2 0.5 5 10 20 S0100 200


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PDF 2SD2211 /2SD1918F5 2SD1918F5 2SB1275 2SB1275. SC-63 SC-62 2SD1918 FRI02 2SB1275 T100 Z100 k50z
transistor 2SB 367

Abstract: Power Transistors SIT sit transistor
Text: b ÿ > ' y X £ /Transistors 2SD2211 NPN 2SD2211/ 2SD1918F5 b ? > y Z $ E C 2 5 U l 9 1 O r 5 Epitaxial Planar NPN Silicon Transistor iSJiîS^^JiSififfl/Low Freq. Power Amp. * W f i ri'ÜEI/'Dim ensions (Unit : mm) 1) i o i i l l i J £ T '^ 5 o B V ce O = 160V 2) S O A P 'f c ^ 'o 3) fT A 'S , 2SD2211 / 2SD1918F5 Si as mi u K * V "i Si m 3S : Ic (A) ft ft m Sf 3$ w o , ifl æ m noHffn TRANSITION FREQUENCY : fr (MHz) 4lm # » s 3 2SD2211 / 2SD1918F5 IS a I


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PDF 2SD2211 2SD2211/2SD1918F5 /2SD1918F5 transistor 2SB 367 Power Transistors SIT sit transistor
2SB1275F5

Abstract: 2SD1918F5
Text: h7>vZ$ /Transistors 2SB1275F5 ^ wr W Epjtaxia, p|anar pnp Silicon Transistor i&JSjft^Jiliffl/Low Freq. Power Amp. • «ft 1) «¡BET« So BVceo=-160V 2) SOAfr'UX, frfl^ffi^o 3) Cob 3 4) 2SD1918F5 • Features 1) High breakdown voltage: BVceo=-160V 2) Wide SOA, and high transition frequency. 3) Small output capacitance. 4) Complementary pair with 2SD1918F5 • &ftft:*:3lft/Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit nu? • a:-x|8hœ Vcbo -160 V □ • i S -y 2I8)®EE Vceo -160 V iî -y £ â


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PDF 2SB1275F5 -160V 2SD1918F5 100ms 2SB1275F5 2SD1918F5
2SD1918F5

Abstract: No abstract text available
Text: /'Transistors 2SB1275F5 2SB1275F5 · 1) © ¡ B E E T & -So I * y7 Is- 1 M PNP y > J > h 7 > v 7s $ Epitaxial Planar PNP Silicon Transistor fé J iìM ifrJ ifìffl/L o w Freq. Power Amp. rfülSI/Dimensions (Unit : mm) BVceo=~160V 2) SOA 3) Cob 4) 2SD1918F5 ¿ 3 > 7 ' J f S 5 0 Y 7 > V X 9 2 S B · Features 1) High breakdown voltage : B V c e o = -1 6 0 V 2) Wide SOA, and high transition fre quency. 3) Small output capacitance. 4) Complementary pair with 2SD1918F5 < 7 9


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PDF 2SB1275F5 2SD1918F5 2SD1918F5
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