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2SD1894 TO-3PF 2SD1894 ECAD Model
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2SD1894 datasheet (9)

Part ECAD Model Manufacturer Description Type PDF
2SD1894 2SD1894 ECAD Model Panasonic NPN Transistor Darlington Original PDF
2SD1894 2SD1894 ECAD Model Panasonic Silicon NPN triple diffusion planar type Darlington Original PDF
2SD1894 2SD1894 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SD1894 2SD1894 ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
2SD1894 2SD1894 ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SD1894 2SD1894 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SD1894P 2SD1894P ECAD Model Panasonic Silicon NPN Triple Diffusion Planar Type Darlington Power Transistor Original PDF
2SD1894Q 2SD1894Q ECAD Model Panasonic Silicon NPN Triple Diffusion Planar Type Darlington Power Transistor Original PDF
2SD1894S 2SD1894S ECAD Model Panasonic Silicon NPN Triple Diffusion Planar Type Darlington Power Transistor Original PDF

2SD1894 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2SB1254

Abstract: 2SD1894
Text: Inchange Semiconductor Product Specification 2SD1894 Silicon NPN Power Transistors DESCRIPTION With TO-3PFa package High DC current gain Low collector saturation voltage Complement to type 2SB1254 APPLICATIONS Power amplification Optimum for 60W high-fidelity output applications PINNING , Semiconductor Product Specification 2SD1894 Silicon NPN Power Transistors CHARACTERISTICS Tj , 5000-15000 8000-30000 2 Inchange Semiconductor Product Specification 2SD1894 Silicon NPN


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PDF 2SD1894 2SB1254 2SB1254 2SD1894
2005 - 2SB1254

Abstract: 2SD1894
Text: Product Specification www.jmnic.com 2SD1894 Silicon NPN Power Transistors DESCRIPTION With TO-3PFa package Optimum for 60W HiFi output High foward current transfer ratio Low collector saturation voltage Complement to type 2SB1254 APPLICATIONS Power amplification PINNING PIN , temperature -55~150 JMnic Product Specification www.jmnic.com 2SD1894 Silicon NPN Power , 2SD1894 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated


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PDF 2SD1894 2SB1254 2SB1254 2SD1894
2SB1254

Abstract: 2SD1894 RB1000
Text: Power Transistors 2SD1894 2SD1894 Silicon NPN Triple-Diffused Planar Darlington Type Power Amplifier Complementary Pair with 2SB1254 ■Features • Optimum for 60W hi-fi output • High DC current gain (hFE): 5000-30000 • Low collector-emitter saturation voltage (VcEisati): <2.5V • "Full , Copyrighted By Its Respective Manufacturer Power Transistors 2SD1894 Pc-Ta Ic — VcE VßE (sat)-Il 60 , 2SD1894 Panasonic b*ì32flS2 ODlbTDS TTö —904— This Material Copyrighted By Its Respective


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PDF 2SD1894 2SB1254 bT326SE 32flS2 2SB1254 2SD1894 RB1000
Not Available

Abstract: No abstract text available
Text: Power Transistors 2SD1894 2SD1894 Silicon NPN Triple-Diffused Planar Darlington Type Package Dimensions Power Amplifier Complementary Pair with 2SB1254 Unit .’ mm tO 4 -r • O ptim um fo r 60W hi-fi o u tp u t • H igh D C c u r re n t gain (Iife): 5000~30000 • L ow c o lle c to r-e m itte r sa tu ra tio n v o ltag e (VcEisao): < 2 .5 V • “Full P a c k ” p ack ag e , \ X On 2SDI8 94 o iu o s e u e d / / \ * Power Transistors 2SD1894 1


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PDF 2SD1894 2SB1254
1999 - 2SD1894

Abstract: 2SB1254
Text: Power Transistors 2SD1894 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1254 Unit: mm 0.7 s Features q q Optimum for 60W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE , classification Rank hFE2 Q P 5000 to 15000 8000 to 30000 1 Power Transistors 2SD1894 PC , voltage VCE (V) Power Transistors 2SD1894 Rth(t) - t Thermal resistance Rth(t) (°C/W) 10000


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PDF 2SD1894 2SB1254 2SD1894 2SB1254
2SD1894

Abstract: 2SB1254
Text: SavantIC Semiconductor Product Specification 2SD1894 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFa package ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SB1254 APPLICATIONS ·Power amplification ·Optimum for 60W high-fidelity output applications , Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD1894 , ) 3 2SD1894 -


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PDF 2SD1894 2SB1254 2SD1894 2SB1254
2003 - 2SB1254

Abstract: 2SD1894
Text: Power Transistors 2SD1894 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1254 5.0±0.2 (3.2) 11.0±0.2 15.0±0.2 3.2±0.1 (3.5) Solder Dip · Optimum for 60 W HiFi output · High forward current transfer ratio hFE · Low , 30 000 Publication date: September 2003 SJD00234BED 1 2SD1894 PC Ta TC=25°C 10 , =3W) Collector output capacitance C (pF) (Common base, input open circuited) ob 80 100 2SD1894 Rth


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PDF 2SD1894 2SB1254 2SB1254 2SD1894
2003 - Not Available

Abstract: No abstract text available
Text: Power Transistors 2SD1894 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1254 Features 21.0±0.5 15.0±0.3 (0.7) 5.0±0.2 (3.2) 11.0±0.2 3.2±0.1 15.0±0.2 M Di ain sc te on na tin nc ue e/ d (3.5) Solder Dip · Optimum for 60 , : September 2003 SJD00234BED 1 2SD1894 PC Ta 80 (1) (1)TC=Ta (2)With a 100×100×2mm Al heat sink , VCE (V) 2 SJD00234BED 2SD1894 Rth t 104 Note: Rth was measured at Ta=25°C and under


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PDF 2SD1894 2SB1254
2003 - Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD1894 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1254 5.0±0.2 (0.7) 15.0±0.3 (3.2) 2.0±0.2 2.0±0.1 21.0±0.5 16.2±0.5 d , 2SD1894 PC  Ta (1) TC=25˚C 10 Collector current IC (A) 60 VBE(sat)  IC 100 40 , Directive (EU 2002/95/EC). 2SD1894 104 Rth  t Note: Rth was measured at Ta=25˚C and under


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PDF 2002/95/EC) 2SD1894 2SB1254
1999 - 2SB1254

Abstract: 2SD1894
Text: Power Transistors 2SD1894 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1254 Unit: mm 0.7 s Features q q Optimum for 60W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE , classification Rank hFE2 Q P 5000 to 15000 8000 to 30000 1 Power Transistors 2SD1894 PC , voltage VCE (V) Power Transistors 2SD1894 Rth(t) - t Thermal resistance Rth(t) (°C/W) 10000


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PDF 2SD1894 2SB1254 2SB1254 2SD1894
2003 - 2SB1254

Abstract: 2SD1894
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD1894 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1254 5.0±0.2 (0.7) 15.0±0.3 (3.2) 15.0±0.2 3.2±0.1 (3.5) Solder Dip · Optimum , 2002/95/EC). 2SD1894 PC Ta TC=25°C 10 Collector current IC (A) 60 40 20 VBE(sat , 2SD1894 Rth t 104 Thermal resistance Rth (°C/W) Note: Rth was measured at Ta=25°C and under


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PDF 2002/95/EC) 2SD1894 2SB1254 2SB1254 2SD1894
MN2488

Abstract: BU808DF T0126 BU724A BU801 T0-126 2SD1764 2SD947 SOT93 BU810-ST
Text: 2SC4916 7 1000 50 SOT93 2SC5003 7 1500 80 T0218-IS0 2SD1894 7 160 70 15000 SOT93 BU810-ST 7 600 75


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PDF BF420 BC517 BCV27 BCV47 BC618 BC879 BD879 T0126 2SD1521 MN2488 BU808DF T0126 BU724A BU801 T0-126 2SD1764 2SD947 SOT93 BU810-ST
Not Available

Abstract: No abstract text available
Text: /2SD2255 2SB1254/ 2SD1894 2SB1490/2SD2250 140 8 <2.5 7 7 100 2SB1469/2SD2221 2SB1255


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PDF 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SA1185 2SB1054/2SD1485 2SB1421 2SD1457 2SD1457A 2SB1252/2SD1892 2SB1502/2SD2275
2SB1254

Abstract: 2SD1894
Text: Inchange Semiconductor Product Specification 2SB1254 Silicon PNP Power Transistors DESCRIPTION With TO-3PFa package Optimum for 60W HiFi output High foward current transfer ratio Low collector saturation voltage Complement to type 2SD1894 APPLICATIONS Power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter SYMBOL VCBO VCEO VEBO SEM GE PARAMETER HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage TOR


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PDF 2SB1254 2SD1894 Collec40V; 2SB1254 2SD1894
2SD1915

Abstract: 2SD1899-Z T0-220MF 2SD1897 2SD1896 2SD1895 2SD1894 2SD1893 2SD1892 2SD1891
Text: 6 3 50 100 130 5000 30000 5 5 2.5 3 5 0. 005 2SD1894 KT PA 160 140 7 3 70 100 160 5000 30000 5 6 , * 2SB1254 (T0-220Fa) BCE/Da 2SD1894 20* 10 0. 5 2* 1.2* 6* 2SB1255 (TO-220Fa) BCE/Da 2SD1895 8* 5 0.5


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PDF EPHTc-25 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895 2SD1896 2SD1897 2SD1912 2SB1274 2SD1915 2SD1899-Z T0-220MF
2SD1485

Abstract: 2SD2340 equivalent audio Darlington 200 W 2SB1154/2SD1705
Text: 2SB1253/2SD1893 2SB1531/2SD2340 2SB1493/2SD2255 2SB1469/2SD2221 2SBT254/ 2SD1894 2SB1255/2SD1895 2SB1490


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PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC3054 2SC4258 2SD1485 2SD2340 equivalent audio Darlington 200 W
2005 - 2SB1254

Abstract: 2SD1894
Text: JMnic Product Specification 2SB1254 Silicon PNP Power Transistors DESCRIPTION With TO-3PFa package Optimum for 60W HiFi output High foward current transfer ratio Low collector saturation voltage Complement to type 2SD1894 APPLICATIONS Power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -160 V


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PDF 2SB1254 2SD1894 -160V; -140V; 2SB1254 2SD1894
2SB1254

Abstract: 2SD1894
Text: SavantIC Semiconductor Product Specification 2SB1254 Silicon PNP Power Transistors DESCRIPTION ·With TO-3PFa package ·Optimum for 60W HiFi output ·High foward current transfer ratio ·Low collector saturation voltage ·Complement to type 2SD1894 APPLICATIONS ·Power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -160 V


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PDF 2SB1254 2SD1894 -160V; -140V; 2SB1254 2SD1894
2SB1254

Abstract: 2SD1894
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE= 5000(Min)@IC= -6A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -6A ·Complement to Type 2SD1894 APPLICATIONS ·Designed for power amplifier applications .cn mi e ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER scs .i VALUE ww VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO UNIT -160 V -140 V


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PDF 2SD1894 -160V; -140V; 2SB1254 2SD1894
2SB1254

Abstract: 2SD1894 high current Darlington pair IC Darlington pair IC
Text: Power Transistors 2SB1254 Silicon PNP Epitaxial Planar Darlington Type Power Amplifier Complementary Pair with 2SD1894 ■Features • Optimum for 60W hi-fi output • High DC current gain (hFE) • Low collector-eimitter saturation voltage (VcEtsao < -2. 5V) • "Full Pack" package for simplified mounting on a heat sink with one screw ■Absolute Maximum Ratings (Tc=25°C) Item Symbol Value Unit Collector-base voltage VcBO -160 V Collector-emitter voltage VCEO -140 V Emitter-base


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PDF 2SB1254 2SD1894 TV-25T 001b2fl3 32BS2 2SB1254 2SD1894 high current Darlington pair IC Darlington pair IC
D2029

Abstract: D2328 2SD2340 2SD1641
Text: /2SD1893 2SB1492/2SD2254 2SB1531/2SD2340 2SB1493/2SD2255 2SB1254/ 2SD1894 2SB1490/2SD2250 2SB1469/2SD2221


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PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 D2029 D2328 2SD2340
2SD2340 equivalent

Abstract: D2254 2SB1493 2SD1641 2SD1485 2SA1185 2SD2328 2SD2052 equivalent 2SB1531 2SD1707
Text: / 2SD1894 2SB1490/2SD2250 140 8 <2.5 7 7 100 2SB1469/2SD2221 2SB1255/2SD1895 2SB1503/2SD2276 Equivalent


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PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 2SD2340 equivalent D2254 2SB1493 2SD1641 2SD1485 2SA1185 2SD2328 2SD2052 equivalent 2SB1531 2SD1707
2SD2340 equivalent

Abstract: 2SB1531 2SD1641 2SD1457A 2SD1457 2SC4535 2SB1421 2SA1185 2SD2328 2SD2052 equivalent
Text: / 2SD1894 2SB1490/2SD2250 140 8 <2.5 7 7 100 2SB1469/2SD2221 2SB1255/2SD1895 2SB1503/2SD2276 Equivalent


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PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 2SD2340 equivalent 2SB1531 2SD1641 2SD1457A 2SD1457 2SC4535 2SB1421 2SA1185 2SD2328 2SD2052 equivalent
2SD2340 equivalent

Abstract: D2250 2SD1485 d2554 2SD2340 audio Darlington 200 W 2sd1641 2SD2052 equivalent
Text: 2SB1253/2SD1893 2SB1492/2SD2254 2SB1531/2SD2340 2SB1493/2SD2255 2SB1254/ 2SD1894 2SB1490/2S D2250 2SB1469


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PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 2SD2340 equivalent D2250 2SD1485 d2554 2SD2340 audio Darlington 200 W 2SD2052 equivalent
1999 - 2SB1254

Abstract: 2SD1894
Text: Power Transistors 2SB1254 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1894 Unit: mm q q 0.7 Optimum for 60W HiFi output High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat): < ­2.5V Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25°C) 21.0±0.5 15.0±0.2 q 3.2±0.1 2.0±0.2 2.0±0.1 1.1±0.1 Symbol Ratings 10.9±0.5 Unit Collector to


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PDF 2SB1254 2SD1894 2SB1254 2SD1894
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