The Datasheet Archive

2SD1864 datasheet (16)

Part ECAD Model Manufacturer Description Type PDF
2SD1864 2SD1864 ECAD Model ROHM Power Transistor (50V, 3A) Original PDF
2SD1864 2SD1864 ECAD Model ROHM Power Transistor Original PDF
2SD1864 2SD1864 ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
2SD1864 2SD1864 ECAD Model Others Transistor Substitution Data Book 1993 Scan PDF
2SD1864 2SD1864 ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SD1864 2SD1864 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SD1864 2SD1864 ECAD Model ROHM Power Transistor (50V, 3A) Scan PDF
2SD1864 2SD1864 ECAD Model ROHM Epitaxial Planar NPN Silicon Transistor, Medium Power Amplifier Apps Scan PDF
2SD1864 2SD1864 ECAD Model ROHM Medium Power Amp. Epitaxial Planar NPN Silicon Transistor Scan PDF
2SD1864 2SD1864 ECAD Model ROHM ATR, ATV Transistors Scan PDF
2SD1864 2SD1864 ECAD Model ROHM ATR / ATV Transistors Scan PDF
2SD1864TV2P 2SD1864TV2P ECAD Model ROHM Power Transistor (50 V, 3 A) Original PDF
2SD1864TV2Q 2SD1864TV2Q ECAD Model ROHM TRANS DRIVER NPN 50V 3A ATV Original PDF
2SD1864TV2Q 2SD1864TV2Q ECAD Model ROHM Power Transistor (50 V, 3 A) Original PDF
2SD1864TV2R 2SD1864TV2R ECAD Model ROHM TRANS DRIVER NPN 50V 3A ATV Original PDF
2SD1864TV2R 2SD1864TV2R ECAD Model ROHM Power Transistor (50 V, 3 A) Original PDF

2SD1864 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1 w NPN EPITAXIAL PLANAR TYPE

Abstract: 2SD1760 2SD1864
Text: Transistors 2SD1760 / 2SD1864 Power Transistor (50V, 3A) 2SD1760 / 2SD1864 •Features 1 , -tO.? [?.3t0.? il 2SD1864 6.8*0.2 [- '0 ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3| Emitter (1 , dissipation 2SD1864 1 W Junction temperature Tj 150 °C Storage temperature Tstg -55-+150 °C *1 Single , . nmm 7020^1 ÜÜSM4MD GTb 2SD1760 / 2SD1864 Transistors •Electrical characteristics (Ta = 25eC , Basic ordering unit (pieces) 2500 2500 2SD1760 PQR O ' - 2SD1864 PQR - I O hFE values are classified


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PDF 2SD1760 2SD1864 2SB118412SB1243. 2SD1760 SC-63 1 w NPN EPITAXIAL PLANAR TYPE 2SD1864
SB1243

Abstract: 2SD1507M
Text: N "7 > y 7, $ /Transistors 2SD1507M/ 2SD1864 X v 7 ) \ t f \ s -T f ó NPN y ' j a > h 7 > v , (U nit : mm) 2SD1507M 2SD1864 · ft* 1) VcE(sat) VcE(sat)=0.5V(Typ.) (I c / I b = 2 A /0 .2 A , * t o P 8 2 -1 8 0 Q 1 2 0 -2 7 0 R 1 8 0 -3 9 0 Type 2SD1507M 2SD1864 hFE NPQR NPQR S B ^ 3 > r * T , tä ä H /'E le c t r ic a l Characteristic Curves 2SD1507M/ 2SD1864 h ~ 7 Fig 1 V X I 2 S , T R A N S IT IO N F R E Q U E N C Y : f T M H z 2SD1507M / 2SD1864


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PDF 2SD1507M/2SD1864 2SD1507M 2SD1864 SB1243 2SB1066M 2SB1243. 2SD1864 2SD1507M/2SD1864
2001 - 2SB1184

Abstract: 2SB1243 2SD1760 2SD1864
Text: 2SD1760 / 2SD1864 Transistors Power Transistor (50V, 3A) 2SD1760 / 2SD1864 !External dimensions (Units : mm) 2SD1760 2SD1864 1.0±0.2 Limits (1) Base (2) Collector (3) Emitter , 5 V 3 A (DC) 4.5 A (Pulse) IC 2SD1864 4.4±0.2 0.9 (3) 1.05 Symbol , 2SD1760 / 2SD1864 Transistors !Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max , hFE 2SD1760 TL 2500 Basic ordering unit (pieces) TV2 2500 PQR 2SD1864 hFE


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PDF 2SD1760 2SD1864 2SD1760 SC-63 65Max. 2SB1184 2SB1243 2SD1864
2SD1760

Abstract: 2SB1184 2SB1243 2SD1864
Text: 2SD1760 / 2SD1864 Transistors Power Transistor (50V, 3A) 2SD1760 / 2SD1864 !External dimensions (Units : mm) 2SD1864 1.0±0.2 0.9 1.0 (3) 1.05 Limits (1) Base (2) Collector (3 , 2.54 Symbol 2SD1760 2SD1864 (1) (1) (2) (3) Collector-base voltage Collector power , 2SD1760 / 2SD1864 Transistors !Electrical characteristics (Ta = 25°C) Symbol Min. Typ. Max , 2SD1864 hFE values are classified as follows: Taping Code PQR Item P Q R hFE


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PDF 2SD1760 2SD1864 100ms 100mm2 2SD1760 2SD1864) 2SB1184 2SB1243 2SD1864
2SD1864

Abstract: No abstract text available
Text: 2SD1864 Transistor, NPN Features · · a v a ila b le in A T V T V 2 p a c k a g e lo w c o , m p le m e n ta ry p a ir w ith 2 S B 1 2 4 3 Dimensions (Units : mm) 2SD1864 (ATV TV2) · , 2SD1864 Electrical characteristics (unless otherwise noted, Ta = 25 C) Parameter Collector-to-base , : V Bfc f V ) Figure 1 Leaded Transistors Figure 2 n o H fn 341 2SD1864 Transistor , , 2SD series 2SD1864 COLLECTOR TO BASE VOLTAGE : Vce ( V ) Figure 9 Ordering information


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PDF 2SD1864 2SD1864
transistor B 1184

Abstract: 2SD1762 b 1185
Text: Transistors Power Transistor (50V, 3A) 2SD1760/ 2SD1864 /2SD1762 ·F e a tu re s 1) LOW VcE(sat , power dissipation 2SD1760 2SD1864 2SD1762 Symbol VCBO V ceo V ebo 2SD1760/ 2SD1864 /2SD1762 Limits , MHz PF Cob · P a c k a g in g specifications and hFE Package Code Type 2SD1760 2SD1864 2SD1762 , le c tric a l characteristic curves 2SD1760/ 2SD1864 /2SD1762 COLLECTOR TO EMITTER VOLTAGE :V C c , capacitance vs. collector-base voltage 252 noHm Transistors 2SD1760/ 2SD1864 /2SD1762 TIME : T


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PDF 2SD1760/2SD1864/2SD1762 1184/2S 1243/2S 96-214-D57) 2SD1760 2SD1864 2SD1762 transistor B 1184 b 1185
1998 - 2SD1760

Abstract: 2SD1762 2SB1185 2SD1864 96214 2sb118 Transistor npn 2SB1184 2SB1243
Text: Transistors Power Transistor (50V, 3A) 2SD1760 / 2SD1864 / 2SD1762 FFeatures 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185 , -D57) 264 Transistors 2SD1760 / 2SD1864 / 2SD1762 FAbsolute maximum ratings (Ta = 25 , follows : 265 Transistors FElectrical characteristic curves 266 2SD1760 / 2SD1864 / 2SD1762 Transistors 2SD1760 / 2SD1864 / 2SD1762 267 ROHM


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PDF 2SD1760 2SD1864 2SD1762 2SB1184 2SB1243 2SB1185. 96-214-D57) 2SD1762 2SB1185 96214 2sb118 Transistor npn
transistor B502

Abstract: 2SD1760 2SB11
Text: .) 2SD1760 B.5+0.2^ 2 3 + 0 .2 CCK5 2SD1864 = 2A/0.2A) 2) Complements the 2SB11 8 4 /2SB 1243/2SB , Emitter-base voltage Collector current Collector power dissipation 2SD1760 2SD1864 2SD1762 Symbol VCBO VCEO V , =25"C)*2 W W(Tc=25" C )* 2 °C ·C 2SD1760/ 2SD1864 /2SD1762 Junction temperature Storage temperature , Emitter cutoff current Collector-emitter saturation voltage 2SD1760, 2SD1864 DC current transfer ratio , g in g specifications and Package Code Type 2SD1760 2SD1864 2SD1762 hFE Ii f e Taping TL 2500


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PDF 2SD1760 2SD1864 2SB11 1243/2SB 2SD1760) 2SD1864) 10Sec 10OOSec transistor B502 2SD1760
2009 - 2SB1184

Abstract: 2SB1243 2SD1760 2SD1864
Text: Power Transistor (50V, 3A) 2SD1760 / 2SD1864 Dimensions (Unit : mm) 0.9 0.65Max. 0.9 , Epitaxial planar type NPN silicon transistor 2SD1864 6.5±0.2 5.1 +0.2 -0.1 5.5 +0.3 -0.1 , Collector power dissipation 3 2SD1760 2SD1864 A (DC) 4.5 IC Collector current A , reserved. 1/3 2009.12 - Rev.A 2SD1760 / 2SD1864 Data Sheet Packaging specifications and hFE , QR 2SD1864 TV2 QR - - hFE values are classified as follows: Item Q R hFE


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PDF 2SD1760 2SD1864 65Max. 2SD1760 2SB1184 2SB1243. SC-63 R0039A 2SB1243 2SD1864
2SD1507

Abstract: E05A 2SD1507M 2SB1066M 2SB1243 2SD1864
Text: /Transistors 2SD1507M/ 2SD1864 2SD1507M 2SD1864 •tt* 1) Vce ( sat)—0.5V (Typ.) ti&^o (at Ic/Ib=2A/0.2A) 2) 2SB1066M/2SB12431 H > -f U 0 • Features 1) Low collector saturation voltage: VcE(sat)—0-5V(Typ.), Ic/Ib=2A/0.2A 2) Complementary pair with 2SB1066M, 2SB1243 ^IS^^fllffl/Medium , 2SD1864 6.8±0.2 J —Li—o.> ATR (1) Emitter (2) Collector (3) Base ATV TV2 (1) Emitter (2 , 500 2SD1507M NPQR O o - _ 2SD1864 NPQR - - © 0 594 lUUfffl


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PDF 2SD1507M/2SD1864 2SD1507M 2SD1864 2SB1066M/2SB12431 2SB1066M, 2SB1243 2SD1507M 2SD1864 2SD1507 E05A 2SB1066M 2SB1243
1999 - 2SD1760

Abstract: 2SD1864 2SB1184 2SB1243
Text: 2SD1760 / 2SD1864 Transistors Power Transistor (50V, 3A) 2SD1760 / 2SD1864 !External dimensions (Units : mm) 2SD1864 1.0±0.2 0.9 1.0 (3) 1.05 Limits (1) Base (2) Collector (3 , 2.54 Symbol 2SD1760 2SD1864 (1) (1) (2) (3) Collector-base voltage Collector power , 2SD1760 / 2SD1864 Transistors !Electrical characteristics (Ta = 25°C) Symbol Min. Typ. Max , 2SD1864 hFE values are classified as follows: Taping Code PQR Item P Q R hFE


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PDF 2SD1760 2SD1864 100ms 100mm2 2SD1760 2SD1864) 2SD1864 2SB1184 2SB1243
TRANSISTOR d1760

Abstract: TRANSISTOR d1762 D1762 D1864 d1760 d1760 NPN Transistor 2SD1864 2SD1762 transistor 1002 ic 6802
Text: Transistors Power Transistor (50V, 3A) 2SD1760/ 2SD1864 /2SD1762 •Features 1) LOW VcE(sat). VcE(sat) = 0.5V (Typ.) (Ic/Ib = 2A/0.2A) 2) Complements the 2SB1184/2SB1243 /2SB1185. •Structure , +U,1 LO r 05 Ö oTsMt c0.5 og+0.2 —0.1 0.5+0.1 2SD1864 6.8+0.2 r—i 2.5+0.2 0.65±0.1 , -220FP EIAJ : SC-67 (1) Base (2) Collector (3) Emitter Transistors 2SD1760/ 2SD1864 /2SD1762 lAbsolute , (Pulse) *1 Collector power dissipation 2SD1760 15 W(Tc=25°C)*2 2SD1864 Pc 1 W 2SD1762 25 W(Tc


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PDF 2SD1760/2SD1864/2SD1762 2SB1184/2SB1243 /2SB1185. 2SD1760 2SD1864 65Max. SC-63 2SD1762 2sd1760 2sd1864 TRANSISTOR d1760 TRANSISTOR d1762 D1762 D1864 d1760 d1760 NPN Transistor 2SD1762 transistor 1002 ic 6802
1998 - TRANSISTOR D400

Abstract: D400 npn transistor D400 transistor TRANSISTOR NPN D400 D400 npn transistor D302 2SB911 high hfe transistor 2sd2166 Transistor PNP VCEO 400V
Text: / 2SD1864 / 2SD1762. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Units: mm , characteristics measurement circuit 239 Transistors Power Transistor (50V, 3A) 2SD1760 / 2SD1864 , / 2SD1864 / 2SD1762 FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE hFE , / 2SD1864 / 2SD1762 266 Transistors 2SD1760 / 2SD1864 / 2SD1762 267 Transistors Medium


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PDF 2SA1807 2SA1862 96-102-A331) 96-109-A343) 2SA1812 2SA1727 2SA1776 96-609-A313) 2SA1834 2SC5001 TRANSISTOR D400 D400 npn transistor D400 transistor TRANSISTOR NPN D400 D400 npn transistor D302 2SB911 high hfe transistor 2sd2166 Transistor PNP VCEO 400V
2001 - 2SB1184

Abstract: 2SB1243 2SD1760 2SD1864
Text: 2SD1760 / 2SD1864 Transistors Power Transistor (50V, 3A) 2SD1760 / 2SD1864 !External dimensions (Units : mm) 2SD1760 2SD1864 1.0±0.2 Limits (1) Base (2) Collector (3) Emitter , 5 V 3 A (DC) 4.5 A (Pulse) IC 2SD1864 4.4±0.2 0.9 (3) 1.05 Symbol , 2SD1760 / 2SD1864 Transistors !Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max , hFE 2SD1760 TL 2500 Basic ordering unit (pieces) TV2 2500 PQR 2SD1864 hFE


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PDF 2SD1760 2SD1864 2SD1760 SC-63 65Max. 2SB1184 2SB1243 2SD1864
EF 6802 P

Abstract: 2sd1864 2SB1066M 2SB1243 2SD1507M 2SB1066
Text: ROHM CO LT» ■- 4DE J> ■70201^ ODGSÖTB 1 BRHU h 7 >VX ^/Transistors 2SD1507M/ 2SD1864 ——-' 7-27-21 2SD1507M y V □ > V=7>v7s$ Power Amp. AdU loOH1 Epitaxial Planar NPN Silicon Transistors â , 2) Complementary pair with 2SB1066M, 2SB1243. 2SD1507M 2SD1864 6.8±0.2 Êf [5.B-* e.Hto.i-ht , 500 2SD1507M NPQR o O - - 2SD1864 NPQR - - © o 594 RONm ROHM CO LTD £/Transistors MDE 3> B Viaain ODDSS1^ □ HRHF1 2SD1507M/ 2SD1864 •. /Electrical Characteristic Curves T—27—21 120 100


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PDF 2SD1507M/2SD1864 2SD1507M 2SB1066M/2SB124313 2SB1066M, 2SB1243. 2SD1507M 2SD1864 EF 6802 P 2sd1864 2SB1066M 2SB1243 2SB1066
2010 - 2SB1243

Abstract: 2SD1864
Text: Power Transistor (50V, 3A) 2SD1864 Dimensions (Unit : mm) Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1243. 2SD1864 2.5±0.2 0.65Max , Rev.B 2SD1864 Data Sheet Packaging specifications and hFE Package Taping Code Basic ordering unit (pieces) Type hFE 2SD1864 TV2 2500 QR hFE values are classified as , RESISTANCE : Rth (°C/W) 2SD1864 100 10 1 0.1 1 10 100 1 10sec 100sec 1000sec


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PDF 2SD1864 2SB1243. 65Max. R1010A 2SB1243 2SD1864
2SD1864

Abstract: No abstract text available
Text: SPICE PARAMETER 2SD1864 by ROHM TR Div. * Q2SD1864 NPN BJT model * Date: 2006/11/16 .MODEL Q2SD1864 NPN + IS=1.2000E-12 + BF=91.918 + VAF=5.7704 + IKF=4.5333 + ISE=1.2000E-12 + NE=1.4873 + BR=344.81 + VAR=100 + IKR=81.827E-3 + ISC=1.4049E-9 + NC=1.6296 + RE=90.000E-3 + RB=.21142 + RC=33.065E-3 + CJE=562.04E-12 + MJE=.559 + CJC=145.17E-12 + MJC=.43988 + TF=1.6562E-9 + XTF=57.091 + VTF=180.89 + ITF=24.514 + TR=66.557E-9 + XTB=1.5000 -


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PDF 2SD1864 Q2SD1864 2000E-12 827E-3 4049E-9 000E-3 065E-3 04E-12 2SD1864
2SD1762

Abstract: 230S d1760 D1864
Text: Transistors Power Transistor (50V, 3A) 2SD1760/ 2SD1864 /2SD1762 ·F e a tu re s 1 ) Low VcE(sat , ·A b s o lu te maximum ratings (Ta = 25°C) 2SD1760/ 2SD1864 /2SD1762 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current 2SD1760 2SD1864 2SD1762 Junction , specifications and hFE Package Code Type 2SD1760 2SD1864 2SD1762 hFE PQR PQR DEF Basic ordering unit (pieces , characteristic curves 2SD1760/ 2SD1864 /2SD1762 0 COLLECTOR TO EMITTER VOLTAGE : Vet (V) 10 20 30


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PDF 2SD1760/2SD1864/2SD1762 2SB1184/ 1243/2SB1185. 2SD1760 2SD1864 2SD1762 O-126 O-220, 0Dlb713 230S d1760 D1864
Not Available

Abstract: No abstract text available
Text: h ~p > y 7, $ /T ra n sisto rs 2SD1507M/ 2SD1864 2SD1507M NPN v U □ > h 7 > y / $ 4,® ^ J i ilPiffl/M edium Power Amp. Epitaxial Planar NPN Silicon Transistors • W IJ ^ iiE l/D im e n s io n s ( U n it: mm) 1) V ce ( sa t )= 0.5V (Typ ) t l & l ' o (at Ic / I b =2A /0.2A ) 2 , 2SD1507M NPQR 2SD1864 594 , m m S i , ) : m t S«pD p) R 5 6 -1 2 0 V c e = 5 V , TRANSITION FREQUENCY : f r [M Hz; 2SD1507M/ 2SD1864 o o o


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PDF 2SD1507M/2SD1864 2SD1507M B1066M 1243t 2SB1066M, 2SB1243. 2SD1864
2sc4496a

Abstract: 2SD3181 2sc3928 2Sc3246 4468 2SD1404 2SC3209 2SC2644 2SD773 2sc3514
Text: 2SD2177 2SD1864 2SC 4485 2SC3668 2SC3733 2SD1994A 2SC3243 2SD1863 2SC 4486 JZ- ¥ 2SC3668 2SD1779 2SD2177 2SC4356 2SC 4487 .Z ¥ 2SC3668 2SD2177 2SD1864 2SC 4488 ¥ 2SC3665 2SD3181 2SD1857


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PDF 2SC4403 2SC4187 2SC4854 2SC2644 2SD1047 2SC3182N 2SC2989 2SC4278 2SC3307 2SC3508 2sc4496a 2SD3181 2sc3928 2Sc3246 4468 2SD1404 2SC3209 2SC2644 2SD773 2sc3514
2SD1878

Abstract: 2SD1887 2SD1855 2SD1854 2SD1852 2SD1851 2SD188 2SD1877 2SD1855A 2SD1853
Text: 2SD1863 U-A PA 120 80 1 1 1 100 82 390 3 0.5 0.4 0.5 0.15 2SD1864 U-A PA 60 50 3 1 1 40 56 390 3 0.5 1 , * 5 0.5 40* 2SB1243 (ATV) ECB 2SD1864 50 5 0.05 30 (ATV) ECB 2SD1865 25


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PDF 2SD1851 2SD1852 2SD1853 2SD1854 2SD1855 2SD1855A 2SD1856 2SD1857 12ECB, 2SD1867 2SD1878 2SD1887 2SD1854 2SD1851 2SD188 2SD1877 2SD1853
2005 - Not Available

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SB1184 TRANSISTOR (PNP) TO-252 FEATURES Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Complements the 2SD1760 / 2SD1864. 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. EMITTER Symbol Parameter Value 2. COLLECTOR Unit VCBO Collector Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5


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PDF O-252 2SB1184 O-252 2SD1760 2SD1864. 30MHz
2005 - transistor 2sb1184

Abstract: 2SB1184 2SD1760 2SD1864
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2Plastic-Encapsulate Transistors 2SB1184 TO-251 TO-252-2 TRANSISTOR (PNP) FEATURES Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Complements the 2SD1760 / 2SD1864. 123 1. BASE 2. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value 3. EMITTER Units VCBO Collector Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base


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PDF O-251/TO-252-2Plastic-Encapsulate 2SB1184 O-251 O-252-2 2SD1760 2SD1864. 30MHz transistor 2sb1184 2SB1184 2SD1864
1998 - 2SB1185

Abstract: 2sB1243 2SD1760 2SB1184 hFE is transistor 2SD1762 96-128-B57 power transistor 3A 2SD1864 transistor 2SB1243
Text: Transistors Power Transistor (*60V, *3A) 2SB1184 / 2SB1243 / 2SB1185 FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. FExternal dimensions (Units: mm) FStructure Epitaxial planar type PNP silicon transistor (96-128-B57) 223 Transistors FAbsolute maximum ratings (Ta = 25_C) FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE hFE values are classified as follows : 224 2SB1184 / 2SB1243


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PDF 2SB1184 2SB1243 2SB1185 2SD1760 2SD1864 2SD1762. 96-128-B57) 2SB1185 hFE is transistor 2SD1762 96-128-B57 power transistor 3A transistor 2SB1243
2N4403 626

Abstract: 2n4401- 312 DTD123YV 2N5087 2n3904 2n3906 MPSa13 549 2SD1960 2SC2389S 2sb1335a 2sd2396
Text: Index Index 2N3904 2N3906 2N4124 2N4126 2N4401 2N4403 2N5087 2N5088 494 462 494 462 489 450 455 482 2SC1645S 220 2SC1740S 223 2SC1741 AS 228 2SC1741S 232 2SC1809S 237 2SC2058S 241 2SC2389S 246 2SC3271F 250 2SC3969 254 2SC4015 259 2SC4037 263 2SC4038 268 2SC4039 273 2SC4040 278 2SC4115S 282 2SC4137 286 2SC4278 290 2SC4595 294 2SC4596 298 2SC4620 302 2SC5060 306 2SD1768S 312 2SD1833 316 2SD1857A 320 2SD1858 324 2SD1859 328 2SD1862 332 2SD1863 336 2SD1864 340 2SD1865 344 2SD1866 348 2SD1889 351 2SD1897


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PDF 2N3904 2N3906 2N4124 2N4126 2N4401 2N4403 2N5087 2N5088 2SC1645S 2SC1740S 2N4403 626 2n4401- 312 DTD123YV 2n3904 2n3906 MPSa13 549 2SD1960 2SC2389S 2sb1335a 2sd2396
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