The Datasheet Archive

2SD1821 datasheet (19)

Part ECAD Model Manufacturer Description Type PDF
2SD1821 2SD1821 ECAD Model Kexin Silicon NPN Epitaxial Planar Type Original PDF
2SD1821 2SD1821 ECAD Model Panasonic Silicon NPN epitaxial planar type Original PDF
2SD1821 2SD1821 ECAD Model Panasonic Silicon NPN epitaxial planer type Original PDF
2SD1821 2SD1821 ECAD Model Panasonic NPN Transistor Original PDF
2SD1821 2SD1821 ECAD Model TY Semiconductor Silicon NPN Epitaxial Planar Type - SOT-323 Original PDF
2SD1821 2SD1821 ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
2SD1821 2SD1821 ECAD Model Others Transistor Substitution Data Book 1993 Scan PDF
2SD1821 2SD1821 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SD18210RL 2SD18210RL ECAD Model Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 150VCEO 50MA SMINI-3 Original PDF
2SD1821A 2SD1821A ECAD Model Kexin Silicon NPN Epitaxial Planar Type Original PDF
2SD1821A 2SD1821A ECAD Model Panasonic Silicon NPN epitaxial planer type Original PDF
2SD1821A 2SD1821A ECAD Model Panasonic NPN Transistor Original PDF
2SD1821A 2SD1821A ECAD Model Panasonic Silicon NPN epitaxial planar type Original PDF
2SD1821A 2SD1821A ECAD Model TY Semiconductor Silicon NPN Epitaxial Planar Type - SOT-323 Original PDF
2SD1821A 2SD1821A ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
2SD1821ALQ 2SD1821ALQ ECAD Model Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
2SD1821ALR 2SD1821ALR ECAD Model Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
2SD1821PQ 2SD1821PQ ECAD Model Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
2SD1821PR 2SD1821PR ECAD Model Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF

2SD1821 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - 2SD1821

Abstract: 2SD1821A
Text: Transistor 2SD1821 , 2SD1821A Silicon NPN epitaxial planer type For high breakdown voltage , 2SD1821 VCBO 185 150 VCEO emitter voltage 2SD1821A Emitter to base voltage Peak collector , Characteristics EIAJ:SC­70 S­Mini Type Package Marking symbol : P( 2SD1821 ) L( 2SD1821A ) (Ta , cutoff current Collector to emitter 2SD1821 voltage 2SD1821A Noise voltage *h FE , 2SD1821 PR PS 2SD1821A LR LS 1 2SD1821 , 2SD1821A Transistor PC - Ta IC -


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PDF 2SD1821, 2SD1821A 2SD1821 2SD1821 2SD1821A
1998 - 2SD1821

Abstract: 2SD1821A panasonic transistor marking pr
Text: Transistor 2SD1821 , 2SD1821A Silicon NPN epitaxial planer type For high breakdown voltage , 2SD1821 VCBO 185 150 VCEO emitter voltage 2SD1821A Emitter to base voltage Peak collector , Characteristics EIAJ:SC­70 S­Mini Type Package Marking symbol : P( 2SD1821 ) L( 2SD1821A ) (Ta , cutoff current Collector to emitter 2SD1821 voltage 2SD1821A Noise voltage *h FE , 2SD1821 PR PS 2SD1821A LR LS 1 2SD1821 , 2SD1821A Transistor PC - Ta IC -


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PDF 2SD1821, 2SD1821A 2SD1821 2SD1821 2SD1821A panasonic transistor marking pr
2002 - 2SD1821

Abstract: 2SD1821A
Text: Transistor 2SD1821 , 2SD1821A Silicon NPN epitaxial planar type (0.425) Unit: mm For high , emitter voltage Symbol Rating Unit VCBO 150 V VCEO 150 2SD1821 2SD1821A 2SD1821 0 to 0.1 Parameter 185 2SD1821A V 185 Emitter to base voltage VEBO 5 , Marking symbol P ( 2SD1821 ) L ( 2SD1821A ) V Peak collector current 1: Base 2: Emitter 3 , Symbol ICBO 2SD1821 IC = 100 µA, IB = 0 IE = 10 µA, IC = 0 2SD1821A Emitter to base voltage


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PDF 2SD1821, 2SD1821A 2SD1821 2SD1821 2SD1821A
2003 - 2SD1821

Abstract: 2SD1821A
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1821 , 2SD1821A , V 2SD1821 2SD1821A 185 Collector-emitter voltage 2SD1821 (Base open) 2SD1821A VCEO , °C -55 to +150 Marking Symbol: · 2SD1821 : P · 2SD1821A : L mW 150 Tstg Storage , voltage (Base open) 2SD1821 2SD1821A Transition frequency Pl Collector-emitter saturation , This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1821 , 2SD1821A PC Ta IC VCE


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PDF 2002/95/EC) 2SD1821, 2SD1821A 2SD1821 2SD1821 2SD1821A
2003 - 2SD1821

Abstract: 2SD1821A
Text: Transistors 2SD1821 , 2SD1821A Silicon NPN epitaxial planar type For high breakdown voltage , open) Symbol Rating Unit VCBO 150 V 2SD1821 2SD1821A 0 to 0.1 Parameter 10° 185 Collector-emitter voltage 2SD1821 (Base open) 2SD1821A Emitter-base voltage , temperature Tstg -55 to +150 Marking Symbol: · 2SD1821 : P · 2SD1821A : L °C Electrical , transfer ratio * IC = 30 mA, IB = 3 mA Collector-emitter voltage (Base open) 2SD1821 2SD1821A


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PDF 2SD1821, 2SD1821A 2SD1821 2SD1821 2SD1821A
2003 - Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1821 , 2SD1821A , open) 2SD1821 2SD1821A VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating 150 185 150 185 5 50 100 150 150 , 2SD1821 (Base open) 2SD1821A Emitter-base voltage (Collector open) Collector current Peak collector , : Collector EIAJ: SC-70 SMini3-G1 Package Marking Symbol: · 2SD1821 : P · 2SD1821A : L Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) 2SD1821 2SD1821A VEBO ICBO hFE


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PDF 2002/95/EC) 2SD1821, 2SD1821A 2SD1821 2SD1821A
2SD1557

Abstract: SC4106 2SC4211 2sd1557 toshiba 2SC4086 2sc3807 2SC3403 2SC3170 2SC2751 2sc4654
Text: - 182 - sa s Type No. tt « Manuf. = £ SANYO Ä 3E TOSHIBA B « NEC B ÍL HITACHI « ± il FUJITSU fâ T MATSUSHITA H m MITSUBISHI □ — A ROHM 2SC 4102-' □—A 2SC4117 2SC4180 2SD1821 2SC 4103 □—A 2SC4406 2SC4250 2SC4086 2SC4462 2SC3932 2SC 4104 S % 2SC2755 2SC2404 2SC 4106 ✓ H m 2SC2553 2SC2518 2SC2816 2SC3169 2SC4205 2 SC 4106 ✓ H m 2SC2335 2SC3170 2SC , JSC3267 2SC3242A 2SC 4116 Ä S 2SC42U 2SD1819 2SC4155 2SC4081 2SC 4117 ^ * S 2SD1821


OCR Scan
PDF 2SC4117 2SC4180 2SD1821 2SC4406 2SC4250 2SC4086 2SC4462 2SC3932 2SC2755 2SC2404 2SD1557 SC4106 2SC4211 2sd1557 toshiba 2sc3807 2SC3403 2SC3170 2SC2751 2sc4654
2008 - 2SD1821

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1821 Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Package High collector-emitter voltage (Base open) VCEO Low noise voltage NV S-Mini type package , 2SD1821 PC Ta IC VCE 120 100 160 120 80 IB = 2.0 mA 1.8 mA 1.6 mA 1.4 mA 1.2 mA 1.0 , currentIE (mA) -100 This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1821


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PDF 2002/95/EC) 2SD1821 2SD1821
Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1821 Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification  Package  High collector-emitter voltage (Base open) VCEO  Low noise voltage NV  S-Mini type , the RoHS Directive (EU 2002/95/EC). 2SD1821 PC  Ta IC  VCE 100 160 120 80 Ta = , product complies with the RoHS Directive (EU 2002/95/EC). 2SD1821 Unit: mm 0.15 −0.05 +0.10


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PDF 2002/95/EC) 2SD1821
2SD1812

Abstract: 2SD1818 2SD1821 2SD1820A 2SD1820 2SD1819A 2SD1817 2SD1816 GV 269 2SD1834
Text: 0.6 0.3 0.03 2SD1820A tST G A 60 50 0.5 0.15 0. 1 20 85 340 10 0.15 0.6 0.3 0.03 2SD1821 fôT HV LF A 150 150 0.05 0.15 1 100 90 450 5 0.01 1 0.03 0.003 2SD1821A tfiT HV LF A 185 185 0.05 0. 15 , =80dß Rg=100K SC-70 (S-MINI ) BEC 2SD1821 150* 10 -0.01 2.3* NV Typ 150mV Gv=80dB Rg=100K SC-70 (S-MINI) BEC 2SD1821A 120* 10 -0. 002 SC-70 (S-MINI) BEC 2SD1823 90* 10 -0. 002 SC


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PDF 2SD1812 2SD1816 2SD1817 2SD1818 2SD1819A 2SD1820 2SD1820A SC-62 2SD1834 2SB1229 2SD1821 2SD1819A 2SD1816 GV 269 2SD1834
2SD1821

Abstract: No abstract text available
Text: Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD1821 Features High collector-emitter voltage VCEO Low noise voltage NV 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage VCEO 150 V Emitter-base voltage VEBO 5 V Peak collector current ICP 100 A Collector current IC 50 A Collector power dissipation PC 150


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PDF 2SD1821 2SD1821
2sc3943

Abstract: 2SC4117 2sc2060 2SC2553 2SC3170 2SC4258 2SC3536 2SC4102 2SC3039 2SC2242
Text: - 184 - S s Type No. tt € Manuf. H $ SANYO S S TOSHIBA B a NEC B ÎL HITACHI « ± a FUJITSU fé T MATSUSHITA H m MITSUBISHI □ — A ROHM 2SC 4179 a a 2SC4400 2SC4253 2SC3936 2SC4258 2SC4098 2SC 4180 y s w 2SC4117 2SD1821 2SC4102 2SC 4181 ^ B m 2SC4413 2SD1824 2SD2351 2SC 4181A B S 2SC4116 2SC3938 2SC4154 2SC 4182 ^ B m 2SC4406 2SC4251 2SC4265 2SC3932 2SC4100 2SC 4183 B W 2SC4249 2SC4259 2SC3933 ¿OV H 1 OH f □ as u ea 2SC440G 2SC4452 2SC3935 2SC4084


OCR Scan
PDF 2SC4400 2SC4253 2SC3936 2SC4258 2SC4098 2SC4117 2SD1821 2SC4102 2SC4413 2SD1824 2sc3943 2SC4117 2sc2060 2SC2553 2SC3170 2SC3536 2SC4102 2SC3039 2SC2242
sc 4145

Abstract: NEC 4164 2SC4116 c3503 2SC4211 2SC4145 2SC4667 2SC3170 rohm 4157 2sd1978
Text: 2SD1821 2SC 4175 / s s 2SC4443 2SC4116 2SC3938 2SC4912 2SC 4176 ——' s a 2SC4667 2SC3938


OCR Scan
PDF 2SC421Ã 2SC4116 2SC4177 2SC3153 2SC3535 2SC4743 2SD1738 2SC4742 2SC3450 sc 4145 NEC 4164 2SC4116 c3503 2SC4211 2SC4145 2SC4667 2SC3170 rohm 4157 2sd1978
2SC1571

Abstract: 2sc3828 4088B 2SC3904 4082 mitsubishi DTC124GK 2SC4259 K 4087 2SC4183 2SC4161
Text: 2SC3932 2SC 4101 □ —a 2SC4117 2SC4180 2SD1821


OCR Scan
PDF 2SC44Q6 2SC4246 2SC4183 2SC4259 2SC4082 UN2217 DTC124GK UN4217 DTC124GS UN5531 2SC1571 2sc3828 4088B 2SC3904 4082 mitsubishi DTC124GK 2SC4259 K 4087 2SC4161
Not Available

Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification 2SD1821 Features High collector-emitter voltage VCEO Low noise voltage NV 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage VCEO 150 V Emitter-base voltage VEBO 5 V Peak collector current ICP 100 A Collector current IC 50 A Collector power dissipation PC 150 mW


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PDF 2SD1821
2SD2436

Abstract: 2SD2434 2SD2433 D49 transistor 2SC3312 2SD2529 2SD2458 2S897 2sb1446 2SD1995
Text: »150 - C 2SB1463 12SD2240/A Î2SB1220 I 2SD1821 /A f 2SB792/A I 2SD814/A A2SB1583 (2SA1816 \ 2SC4715


OCR Scan
PDF O-92NL 2SB1462 I2SD2216 f2SB1218A I2SD1819A 2SB709A 12SD601A f2SB1627 I2SD2496 C2SA1309A 2SD2436 2SD2434 2SD2433 D49 transistor 2SC3312 2SD2529 2SD2458 2S897 2sb1446 2SD1995
2SB642

Abstract: 2SD2529 2SD1995 2SB1627 2SD1993 2SD1010 2SC3312 2SD2436 2SD1199 2sd661
Text: ampli I 2SD2240/A I 2SD1821 /A 12SD814/A f 2SA1531/A [2SA1034/1035 fier 2SB1036 f 2SA1816 f 2SA921


OCR Scan
PDF 2SB642 2SA1619/A 2SB1322A 2SB1462 12SD2216 2SB1218A 12SD1819A 2SB1219/A 2SA921 2SD2258 2SB642 2SD2529 2SD1995 2SB1627 2SD1993 2SD1010 2SC3312 2SD2436 2SD1199 2sd661
2SB1446

Abstract: 2SB642 2SD2458 2SD1995 2SD1993 2SD1010 2sc5335 2sb788 2SC2632 2SD1512
Text: noise ampli fier 2SB1463 2SD2240/A í 2SB1220 ' 2SD1821 /A f 2SA1531/A i 2SC3929/A ; 2SA921 I 2SC1980


OCR Scan
PDF 2SB1462 2SB1218A 2SD1819A 2SB1219/A 2SD1820/A 2SB709A 2SD601A 2SB710/A 2SD602/A 2SA1309A 2SB1446 2SB642 2SD2458 2SD1995 2SD1993 2SD1010 2sc5335 2sb788 2SC2632 2SD1512
2SD2458

Abstract: 2SD2434 2SD2436 2SB1600 2SB642 2SB1627 2SD2433 2SD1010 HOA1404-2 2SA1310
Text: 20 «150 - (2SB1463 12SD2240/A Î2SB1220 I 2SD1821 /A f 2SB792/A I 2SD814/A A2SB1583 Î2SA1816 I


OCR Scan
PDF O-92NL 2SB1462 2SD2216 2SB1218A I2SD1819A 2SB709A 2SD601A 2SB1627 I2SD2496 2SA1309A 2SD2458 2SD2434 2SD2436 2SB1600 2SB642 2SD2433 2SD1010 HOA1404-2 2SA1310
1998 - 2SB1220

Abstract: 2SD1821
Text: Transistor 2SB1220 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD1821 Unit: mm 2.1±0.1 0.425 +0.1 1.25±0.1 0.3­0 0.65 1.3±0.1 q 0.425 1 0.65 q High collector to emitter voltage VCEO. Low noise voltage NV. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.0±0.2 q 3 2 Ratings Unit VCBO ­150 V


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PDF 2SB1220 2SD1821 2SB1220 2SD1821
2003 - 2SB1220

Abstract: 2SD1821
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1220 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD1821 (0.425) Unit: mm 0.3+0.1 ­0.0 0.15+0.10 ­0.05 1.25±0.10 5° 2.1±0.1 0.9±0.1 · High collector-emitter voltage (Base open) VCEO · Low noise voltage NV · S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine


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PDF 2002/95/EC) 2SB1220 2SD1821 2SB1220 2SD1821
2003 - Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1220 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD1821 Features · High collector-emitter voltage (Base open) VCEO · Low noise voltage NV · S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Unit: mm (0.425) 0.3+0.1 ­0.0 3 1.25±0.10 2.1±0.1 0.15+0.10 ­0.05 1 2 0.2±0.1 0.9±0.1


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PDF 2002/95/EC) 2SB1220 2SD1821
2SB1220

Abstract: 2sb1216 2SD1761 2SB1190A 2SB1189 2SB1208 2SB1186 2SB1184 2SD1812 2SB1204
Text: =100K 2SD1821 SC—70 (S—M INI) BEC 2SB1220 50 -10 0.01 10 2SC3941 (TO-92NL) ECB 2SB1221


OCR Scan
PDF 2SB1184 2sb1184f5 2SBU85 2SB1186 2sb1186a 2sb1187 2SB1188 2SB1209 2SD1812 SC-51 2SB1220 2sb1216 2SD1761 2SB1190A 2SB1189 2SB1208 2SB1204
2003 - 2SB1220

Abstract: 2SD1821
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1220 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD1821 (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 ­0.0 0.15+0.10 ­0.05 2.1±0.1 2 0.2±0.1 1 0.9+0.2 ­0.1 · High collector-emitter voltage (Base open) VCEO · Low noise voltage NV · S-Mini type package, allowing downsizing of the equipment and


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PDF 2002/95/EC) 2SB1220 2SD1821 2SB1220 2SD1821
2003 - 2SB1220

Abstract: 2SD1821
Text: Transistors 2SB1220 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD1821 (0.425) Unit: mm 0.3+0.1 ­0.0 0.15+0.10 ­0.05 1.25±0.10 5° 2.1±0.1 0.9±0.1 · High collector-emitter voltage (Base open) VCEO · Low noise voltage NV · S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.9+0.2 ­0.1 3 Features 2 0.2±0.1 1 (0.65


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PDF 2SB1220 2SD1821 2SB1220 2SD1821
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