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2SD1820A-(TX) 2SD1820A-(TX) ECAD Model
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2SD1820 datasheet (30)

Part ECAD Model Manufacturer Description Type PDF
2SD1820 2SD1820 ECAD Model Kexin Silicon NPN Epitaxial Planar Type Original PDF
2SD1820 2SD1820 ECAD Model Panasonic Silicon NPN epitaxial planer type Original PDF
2SD1820 2SD1820 ECAD Model Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
2SD1820 2SD1820 ECAD Model TY Semiconductor Silicon NPN Epitaxial Planar Type - SOT-323 Original PDF
2SD1820 2SD1820 ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
2SD1820 2SD1820 ECAD Model Others Transistor Substitution Data Book 1993 Scan PDF
2SD1820 2SD1820 ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SD1820 2SD1820 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SD18200RL 2SD18200RL ECAD Model Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN GP AMP 25VCEO SMINI 3P Original PDF
2SD1820A 2SD1820A ECAD Model Kexin Silicon NPN Epitaxial Planar Type Original PDF
2SD1820A 2SD1820A ECAD Model Panasonic Silicon NPN epitaxial planer type Original PDF
2SD1820A 2SD1820A ECAD Model Panasonic NPN Transistor Original PDF
2SD1820A 2SD1820A ECAD Model Panasonic Silicon NPN epitaxial planer type Original PDF
2SD1820A 2SD1820A ECAD Model Panasonic Transistor for general amplification. Complementary to 2SB1219 and 2SB1219A Original PDF
2SD1820A 2SD1820A ECAD Model Panasonic Silicon NPN epitaxial planar type Original PDF
2SD1820A 2SD1820A ECAD Model TY Semiconductor Silicon NPN Epitaxial Planar Type - SOT-323 Original PDF
2SD1820A 2SD1820A ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
2SD1820A 2SD1820A ECAD Model Others Transistor Substitution Data Book 1993 Scan PDF
2SD1820A 2SD1820A ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SD1820A0L 2SD1820A0L ECAD Model Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN GP AMP 50VCEO SMINI 3P Original PDF

2SD1820 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - 2SB1219

Abstract: 2SB1219A 2SD1820 2SD1820A
Text: Transistor 2SD1820 , 2SD1820A Silicon NPN epitaxial planer type For general amplification , 2SD1820A Ratings 0 to 0.1 2SD1820 base voltage 3 0.2 Collector to 1 2 (Ta , 0.2±0.1 s Electrical Characteristics Symbol 2SD1820 voltage 2SD1820A Collector to emitter 2SD1820 voltage 2SD1820A Marking symbol : W( 2SD1820 ) X( 2SD1820A ) Conditions , WR WS 2SD1820A XQ XR XS 1 2SD1820 , 2SD1820A Transistor PC - Ta IC -


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PDF 2SD1820, 2SD1820A 2SB1219 2SB1219A 2SD1820 2SB1219A 2SD1820 2SD1820A
2003 - Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1820 , 2SD1820A , ) Parameter Collector-base voltage (Emitter open) 2SD1820 2SD1820A Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg , voltage 2SD1820 (Base open) 2SD1820A Emitter-base voltage (Collector open) Collector current Peak , Marking Symbol: · 2SD1820 : W · 2SD1820A : X Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) 2SD1820 2SD1820A 2SD1820 2SD1820A


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PDF 2002/95/EC) 2SD1820, 2SD1820A 2SB1219 2SB1219A 2SD1820 2SD1820
2SB1219

Abstract: 2SB1219A 2SD1820 2SD1820A
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1820 , 2SD1820A , 2.0±0.2 2SD1820 2SD1820A 10° 60 Collector-emitter voltage 2SD1820 (Base open) 2SD1820A , 2SD1820 symbol 2SD1820A WQ WR WS XQ XR XS X Product of no-rank is not , product complies with the RoHS Directive (EU 2002/95/EC). 2SD1820 , 2SD1820A PC Ta IC VCE 80 , 50 1: Base 2: Emitter 3: Collector EIAJ: SC-70 SMini3-G1 Package Marking Symbol: · 2SD1820


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PDF 2002/95/EC) 2SD1820, 2SD1820A 2SB1219 2SB1219A 2SD1820 2SB1219A 2SD1820 2SD1820A
2003 - 2SD1820

Abstract: 2SB1219 2SB1219A 2SD1820A
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1820 , 2SD1820A , 2SD1820 2SD1820A 10° 60 VCEO 25 V Emitter-base voltage (Collector open) VEBO 5 , 2SD1820 : W · 2SD1820A : X Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol , Marking 2SD1820 symbol 2SD1820A WQ WR WS XQ XR XS X Product of no-rank is not , product complies with the RoHS Directive (EU 2002/95/EC). 2SD1820 , 2SD1820A PC Ta IC VCE 700


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PDF 2002/95/EC) 2SD1820, 2SD1820A 2SB1219 2SB1219A 2SD1820 2SD1820 2SB1219A 2SD1820A
2001 - 2SB1219

Abstract: 2SB1219A 2SD1820 2SD1820A
Text: Transistor 2SD1820 , 2SD1820A Silicon NPN epitaxial planer type For general amplification , through the tape packing and the magazine packing. Collector to 2SD1820 base voltage 2SD1820A , voltage 2SD1820A Collector to emitter 2SD1820 voltage 2SD1820A Marking symbol : W( 2SD1820 ) X( 2SD1820A ) Conditions min typ max VCBO IC = 10µA, IE = 0 VCEO IC = 2mA , hFE1 Marking Symbol Q 85 ~ 170 120 ~ 240 170 ~ 340 2SD1820 WQ WR WS 2SD1820A


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PDF 2SD1820, 2SD1820A 2SB1219 2SB1219A 2SD1820 2SB1219A 2SD1820 2SD1820A
2003 - 2SB1219

Abstract: 2SB1219A 2SD1820 2SD1820A
Text: Transistors 2SD1820 , 2SD1820A Silicon NPN epitaxial planar type For general amplification , VCBO 30 V 2.0±0.2 2SD1820 2SD1820A 10° 60 Collector-emitter voltage 2SD1820 , Package Marking Symbol: · 2SD1820 : W · 2SD1820A : X Electrical Characteristics Ta = 25°C ± 3 , open) 2SD1820 VCBO Conditions Min IC = 10 µA, IE = 0 Typ 30 2SD1820A VCEO , to 340 85 to 340 Marking 2SD1820 symbol 2SD1820A WQ WR WS XQ XR XS X


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PDF 2SD1820, 2SD1820A 2SB1219 2SB1219A 2SD1820 2SB1219A 2SD1820 2SD1820A
2002 - 2SB1219

Abstract: 2SB1219A 2SD1820 2SD1820A
Text: Transistor 2SD1820 , 2SD1820A Silicon NPN epitaxial planar type (0.425) Unit: mm For , Unit VCBO 30 V VCEO 25 2SD1820 2SD1820A 2SD1820 0 to 0.1 Parameter Collector , ( 2SD1820 ) X ( 2SD1820A ) A Collector current 1: Base 2: Emitter 3: Collector EIAJ: SC , to 170 120 to 240 170 to 340 2SD1820 WQ WR WS 2SD1820A XQ XR XS SJC00227BED 1 2SD1820 , 2SD1820A PC Ta IC VCE 120 80 IB = 10 mA 9 mA 8 mA 7 mA 6 mA


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PDF 2SD1820, 2SD1820A 2SB1219 2SB1219A 2SD1820 2SB1219A 2SD1820 2SD1820A
2008 - 2SB1219

Abstract: 2SD1820
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1820 Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1219 Package Low collector-emitter saturation voltage VCE(sat) S-Mini type package, allowing downsizing of the equipment and , SJC00227DED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1820 PC Ta IC , Directive (EU 2002/95/EC). 2SD1820 SMini3-G1 (0.425) Unit: mm +0.1 +0.10 0.3 -0.0


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PDF 2002/95/EC) 2SD1820 2SB1219 2SB1219 2SD1820
Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1820 Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1219  Package  Low collector-emitter saturation voltage VCE(sat)  S-Mini type package, allowing downsizing of the , RoHS Directive (EU 2002/95/EC). 2SD1820 PC  Ta IC  VCE Collector current IC (mA) 160 , Directive (EU 2002/95/EC). 2SD1820 Unit: mm 0.15 −0.05 +0.10 3 Request for your special


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PDF 2002/95/EC) 2SD1820 2SB1219
2SD1812

Abstract: 2SD1818 2SD1821 2SD1820A 2SD1820 2SD1819A 2SD1817 2SD1816 GV 269 2SD1834
Text: 0.15 0.1 20 160 460 10 0.002 0.5 0.1 0.01 2SD1820 fôT G A 30 25 0.5 0. 15 0.1 20 85 340 10 0.15 0.6 0.3 0.03 2SD1820A tST G A 60 50 0.5 0.15 0. 1 20 85 340 10 0.15 0.6 0.3 0.03 2SD1821 fôT HV , -7 0 (S—M INI) BEC 2SD1819A 200* 10 -0.05 15 2SB1219 SC—70 (S—MI NI ) BEC 2SD1820 200* 10 -0.05 15 2SB1219A SC-70 (S-MINI ) BEC 2SD1820A 150* 10 -0.01 2. 3* NV Typ 150mV Gv


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PDF 2SD1812 2SD1816 2SD1817 2SD1818 2SD1819A 2SD1820 2SD1820A SC-62 2SD1834 2SB1229 2SD1821 2SD1819A 2SD1816 GV 269 2SD1834
Not Available

Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification 2SD1820 Features Low collector-emitter saturation voltage VCE(sat). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Peak collector current ICP 1 A mW Collector power dissipation PC 150 Junction


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PDF 2SD1820
sc 4145

Abstract: NEC 4164 2SC4116 c3503 2SC4211 2SC4145 2SC4667 2SC3170 rohm 4157 2sd1978
Text: 2SC 4172 ■H & 2SC2833 2SC 4173 S a s 2SC4118 2SD1820 2SC4077 2SC 4174 a a 2SC4117


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PDF 2SC421Ã 2SC4116 2SC4177 2SC3153 2SC3535 2SC4743 2SD1738 2SC4742 2SC3450 sc 4145 NEC 4164 2SC4116 c3503 2SC4211 2SC4145 2SC4667 2SC3170 rohm 4157 2sd1978
4946

Abstract: me 4946 2SC5020 4947 an 4953 4953 2SC3124 2SC3310 2SC4639 4336
Text: - 203 - S « Type No. tt « Manuf. H. 'M SANYO M TOSHIBA s m. NEC 0 iL HITACHI * ± a FUJITSU t& T MATSUSHITA • MITSUBISHI □ — A ROHM 2SC 4S30 H % 2SC4S39 ZÒUOUUD 2SC4808 2SC 4931 = » 2SC4931 2SC5007 2SC4805 2SC 4932 S iL 2SC4555 2SC4118 2SD2228 2SD1820 2SC3440 2SC 4933 S ÍL 2SC4211 2SC4666 2SC4181 2SD1823 2SC3441 2SC4081 2SC 4934 z' 0 iL 2SC3953 2SC4439 2SD2365 2SC 4935 M 2 2SD1913 2SD1585 2SD1266 2SD1972 2SD2395 23C 4336 — — rF "ÏQPTQH1 4 2SC 4940 S


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PDF 2SC4S39 2SC4808 2SC4931 2SC5007 2SC4805 2SC4555 2SC4118 2SD2228 2SD1820 2SC3440 4946 me 4946 2SC5020 4947 an 4953 4953 2SC3124 2SC3310 2SC4639 4336
2SD1820

Abstract: No abstract text available
Text: Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SD1820 Features Low collector-emitter saturation voltage VCE(sat). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Peak collector current ICP 1 A mW Collector power dissipation PC 150


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PDF 2SD1820 2SD1820
2SC3532

Abstract: 2SC3533 2SC4242 2SC4212 2SC3170 2SC3082K 2SC2621 2SC3077 4213 2SC3425
Text: - 185 A - M % it Manuf. £ H SANYO £ TOSHIBA b NEC m B HITACHI ÍZ. Ä ± FUJITSU ÒS te T MITSUBISHI - ROHM T y p e No. 2SC4210 2SC4211 ^ = te M n T £ MATSUSHITA 2SD1328 2SD1935 2SC4116 2SC2621 2SC3425 2SC4181 2SC2688 2SD1781K 2SC4155 2SC2412K 2SD1918A 2SC 4212 ^ 2SC 4213 / 2SC 4214 2SC 4215 2SC 2SC 4216 4217 > ^ 2SD1820 2SC4085 2SC4415 2SC4259 2SC2847 2SC3931 UN4216 2SC2688 2SC3333 2SC2258 2SC1473 2SC3353 2SC4099 ÌH IE


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PDF 2SC4210 2SC4211 2SD1328 2SD1935 2SC4116 2SC2621 2SC3425 2SC4181 2SC2688 2SD1781K 2SC3532 2SC3533 2SC4242 2SC4212 2SC3170 2SC3082K 2SC3077 4213
2SD2458

Abstract: 2SD2434 2SD2436 2SB1600 2SB642 2SB1627 2SD2433 2SD1010 HOA1404-2 2SA1310
Text: l 2SD637 (2SB1320A I 2SD1991A 50 100 •160 -460 * 2 {2SB1219/A I 2SD1820 /A f 2SB710/A I


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PDF O-92NL 2SB1462 2SD2216 2SB1218A I2SD1819A 2SB709A 2SD601A 2SB1627 I2SD2496 2SA1309A 2SD2458 2SD2434 2SD2436 2SB1600 2SB642 2SD2433 2SD1010 HOA1404-2 2SA1310
2SB1446

Abstract: 2SB642 2SD2458 2SD1995 2SD1993 2SD1010 2sc5335 2sb788 2SC2632 2SD1512
Text: Silicon Small Signal Transistors Application Functions SS-Mini Type (D1 ) I 2SB1462 # General-use Low Frequency Amplifiers and Others Package (No.) S-Mini Type (D5) ' 2SB1218A 2SD1819A : 2SB1219/A i 2SD1820 /A Mini Type (D12) ! 2SB709A I 2SD601A i 2SB710/A i 2SD602/A New S Type (034) i 2SA1309A ! 2SC3311A 2SB1030/A i 2SD1423/A TO-92 (D46) M Type (D35) i 2SB642 I 2SD637 TO-92NL (D48) TO-92 L (047) Mini -Power Type (019) V ceo MT1 Type (037) ( 2SB1320A i 2SD1991A fr (MHz


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PDF 2SB1462 2SB1218A 2SD1819A 2SB1219/A 2SD1820/A 2SB709A 2SD601A 2SB710/A 2SD602/A 2SA1309A 2SB1446 2SB642 2SD2458 2SD1995 2SD1993 2SD1010 2sc5335 2sb788 2SC2632 2SD1512
2SB642

Abstract: 2SD2529 2SD1995 2SB1627 2SD1993 2SD1010 2SC3312 2SD2436 2SD1199 2sd661
Text: 2SB1218A 12SD1819A ( 2SB1219/A I 2SD1820 /A i 2SB709A I 2SD601A 1 2SB710/A I 2SD602/A 1 2SA1791


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PDF 2SB642 2SA1619/A 2SB1322A 2SB1462 12SD2216 2SB1218A 12SD1819A 2SB1219/A 2SA921 2SD2258 2SB642 2SD2529 2SD1995 2SB1627 2SD1993 2SD1010 2SC3312 2SD2436 2SD1199 2sd661
1998 - 2SB1219

Abstract: 2SB1219A 2SD1820 2SD1820A
Text: Transistor 2SB1219, 2SB1219A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD1820 and 2SD1820A Unit: mm s Features 1.25±0.1 0.425 0.3­0 +0.1 (Ta=25°C) 0.65 1.3±0.1 s Absolute Maximum Ratings 0.425 1 0.65 q 2.1±0.1 Large collector current IC. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.0±0.2 q 3 2 2SB1219 ­25 VCEO


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PDF 2SB1219, 2SB1219A 2SD1820 2SD1820A 2SB1219 2SB1219 2SB1219A 2SD1820A
2000 - 2SB1219

Abstract: 2SB1219A 2SD1820 2SD1820A
Text: Transistors 2SB1219, 2SB1219A Silicon PNP epitaxial planer type (0.425) Unit: mm For general amplification Complementary to 2SD1820 and 2SD1820A 0.3+0.1 ­0.0 0.15+0.10 ­0.05 1.25±0.10 5° · Large collector current IC · S-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.1±0.1 0.9±0.1 I Features 0.9+0.2 ­0.1 3 2 0.2±0.1 1 (0.65) (0.65) 1.3±0.1 2.0±0.2 I Absolute


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PDF 2SB1219, 2SB1219A 2SD1820 2SD1820A 2SB1219 2SB1219 2SB1219A 2SD1820A
2SB1220

Abstract: 2sb1216 2SD1761 2SB1190A 2SB1189 2SB1208 2SB1186 2SB1184 2SD1812 2SB1204
Text: INI) BEC 2SB1218A 200* -10 0.05 15 2SD1820 SC—70 (S—M IN I ) BEC 2SB1219 200* -10 0.05 15 2SD1820A SC—70(S—M INI) BEC 2SB1219A 200* -10 0.01 4* NV Typ 150mV Gv=80dB Rg


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PDF 2SB1184 2sb1184f5 2SBU85 2SB1186 2sb1186a 2sb1187 2SB1188 2SB1209 2SD1812 SC-51 2SB1220 2sb1216 2SD1761 2SB1190A 2SB1189 2SB1208 2SB1204
2003 - 2SB1219

Abstract: 2SB1219A 2SD1820 2SD1820A
Text: Transistors 2SB1219, 2SB1219A Silicon PNP epitaxial planar type (0.425) Unit: mm For general amplification Complementary to 2SD1820 and 2SD1820A 0.3+0.1 ­0.0 Features 0.15+0.10 ­0.05 (0.65) (0.65) Symbol 2SB1219 Collector-base voltage (Emitter open) Rating VCBO -30 1.3±0.1 Unit V 2.0±0.2 10° -60 2SB1219A 2 0.2±0.1 1 Absolute Maximum Ratings Ta = 25°C Parameter 2.1±0.1 5° 1.25±0.10 0.9±0.1 · Large collector current IC ·


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PDF 2SB1219, 2SB1219A 2SD1820 2SD1820A 2SB1219 2SB1219 2SB1219A 2SD1820A
2000 - 2SB1219

Abstract: 2SB1219A 2SD1820 2SD1820A
Text: Transistors 2SB1219, 2SB1219A Silicon PNP epitaxial planer type (0.425) Unit: mm For general amplification Complementary to 2SD1820 and 2SD1820A 0.3+0.1 ­0.0 0.15+0.10 ­0.05 1.25±0.10 5° · Large collector current IC · S-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.1±0.1 0.9±0.1 I Features 0.9+0.2 ­0.1 3 2 0.2±0.1 1 (0.65) (0.65) 1.3±0.1 2.0±0.2 I Absolute


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PDF 2SB1219, 2SB1219A 2SD1820 2SD1820A 2SB1219 2SB1219 2SB1219A 2SD1820A
2002 - 2sa1219

Abstract: 2SB1219 2SB1219A 2SD1820 2SD1820A
Text: Transistor 2SB1219, 2SB1219A Silicon PNP epitaxial planar type (0.425) Unit: mm For general amplification Complementary to 2SD1820 and 2SD1820A 0.3+0.1 ­0.0 0.15+0.10 ­0.05 1.25±0.10 5° · Large collector current IC · S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing 0.9+0.2 ­0.1 s Features 2.1±0.1 0.9±0.1 3 2 0.2±0.1 1 (0.65) (0.65) 1.3±0.1 2.0±0.2 s Absolute


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PDF 2SB1219, 2SB1219A 2SD1820 2SD1820A 2SB1219 2SA1219Anductor 2sa1219 2SB1219 2SB1219A 2SD1820A
2003 - Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1219, 2SB1219A Silicon PNP epitaxial planar type (0.425) For general amplification Complementary to 2SD1820 and 2SD1820A Features · Large collector current IC · S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Unit: mm 0.3+0.1 ­0.0 3 1.25±0.10 2.1±0.1 0.15+0.10 ­0.05 1 2 0.2±0.1 0.9±0.1 0.9+0.2 ­0.1 Absolute Maximum


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PDF 2002/95/EC) 2SB1219, 2SB1219A 2SD1820 2SD1820A 2SB1219 2SB1219A
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