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2SD1819A datasheet (18)

Part Manufacturer Description Type PDF
2SD1819A Kexin Silicon NPN Epitaxial Planar Type Original PDF
2SD1819A Panasonic Silicon NPN epitaxial planer type Original PDF
2SD1819A Panasonic Silicon NPN epitaxial planer type Original PDF
2SD1819A Panasonic NPN Transistor Original PDF
2SD1819A TY Semiconductor Silicon NPN Epitaxial Planar Type - SOT-323 Original PDF
2SD1819A Others The Transistor Manual (Japanese) 1993 Scan PDF
2SD1819A Others Transistor Substitution Data Book 1993 Scan PDF
2SD1819A Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SD1819A Others Japanese Transistor Cross References (2S) Scan PDF
2SD1819A0L Panasonic TRANS NPN GP AMP 50VCEO SMINI 3P Original PDF
2SD1819A0L Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN GP AMP 50VCEO SMINI 3P Original PDF
2SD1819AQL Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN GP AMP 50VCEO SMINI 3P Original PDF
2SD1819ARL Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN GP AMP 50VCEO SMINI 3P Original PDF
2SD1819ASL Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN GP AMP 50VCEO SMINI 3P Original PDF
2SD1819AZ Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
2SD1819AZQ Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
2SD1819AZR Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
2SD1819AZS Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF

2SD1819A Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2SD1819A

Abstract:
Text: CLASSIFICATION OF hFE Product-Rank REF. 2SD1819A-Q 2SD1819A-R 2SD1819A-S Range 160~260 210~340 , 2SD1819A 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente 24 RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-323 FEATURES High DC Current Gain. Low collector to emitter saturation voltage VCE(sat). Complementary to 2SB1218A A L 3 3 , individually. Page 1 of 2 2SD1819A Elektronische Bauelemente 0.1A , 60V NPN Plastic-Encapsulate


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PDF 2SD1819A OT-323 2SB1218A 2SD1819A-Q 2SD1819A-R 2SD1819A-S 24-Feb-2011 100mA 100mA, 200MHz 2SD1819A transistor ZR 2SD1819AR 2SB1218A 2SD1819A-S 2SD1819AS
ZR 720

Abstract:
Text: 2SD1819A NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product SOT-323 Dim FEATURES A High foward current transfer ratio hFE. Max A 3 B S Top View 2.200 1.150 1.350 C Low collector to emitter saturation voltage VCE(sat). 1.800 B L Complementary to 2SB1218A Min 0.800 1.000 V 3 1 BASE C 1.400 , informed individual Page 1 of 2 2SD1819A NPN Silicon Elektronische Bauelemente General


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PDF 2SD1819A OT-323 2SB1218A 01-Jun-2007 100mA, 200MHz ZR 720 D 400 transistor 2SB1218A 2SD1819A
sc 4145

Abstract:
Text: 2SD1271 2SC4849 2SC 4154 H g 2SC4211 2SC4116 2SD1819A 2SC4081 2SC 4155 = m 2SC4211 2SC4116 2SC4177 2SD1819A 2SC4081 2SC 4157 —' X s 2SC2749 2SC3171 2SC 4159 J * 2SD1772


OCR Scan
PDF 2SC421Ã 2SC4116 2SC4177 2SC3153 2SC3535 2SC4743 2SD1738 2SC4742 2SC3450 sc 4145 NEC 4164 2SC4116 2SC4667 2SC4211 c3503 2SC4145 2SC3170 2sd1978 2sc4153
1998 - 2SB1218A

Abstract:
Text: Transistor 2SD1819A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1218A Unit: mm 2.1±0.1 s Features 0.3­0 0.65 1 0.65 1.3±0.1 +0.1 0.425 3 2 Symbol Ratings Unit VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7 V Peak collector current ICP 200 mA , 1 2SD1819A Transistor PC - Ta IC - VCE 1200 Ta=25°C 50 160 120 80 40


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PDF 2SD1819A 2SB1218A 2SB1218A 2SD1819A
2SB1218AW

Abstract:
Text: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor FEATURES High forward current transfer ratio hFE Excellent HFE Linearity. 2SB1218AW Pb Lead-free Complements the 2SD1819A. APPLICATIONS For general purpose amplification. SOT-323 ORDERING INFORMATION Type No. Marking Package Code 2SB1218AW BQ1/BR1/BS1 SOT-323 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage


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PDF 2SB1218AW 2SD1819A. OT-323 BL/SSSTF034 2SB1218AW 2SD1819A marking BQ 4
2SB1218A

Abstract:
Text: Transistor 2SD1819A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1218A (0.425) Unit: mm +0.1 0.3Ð0.0 s Features 5û 1 2 0.2±0.1 q 2.1±0.1 q 3 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and automatic insertion through , V 2SD1819A Transistor PC - Ta IC - VCE 1200 Ta=25°C 50 160 120 80 40


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PDF 2SD1819A 2SB1218A 2SB1218A 2SD1819A
2003 - 2SB1218A

Abstract:
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1819A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1218A (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 ­0.0 0.15+0.10 ­0.05 1.25±0.10 2.1±0.1 0.9+0.2 ­0.1 1 2 0.2±0.1 · High forward current transfer ratio hFE · Low , /EC). 2SD1819A PC Ta IC VCE 120 80 40 1 000 140 µA 40 120 µA 100 µA 30


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PDF 2002/95/EC) 2SD1819A 2SB1218A 2SB1218A 2SD1819A
1998 - 2SB1218A

Abstract:
Text: Transistor 2SD1819A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1218A Unit: mm 2.1±0.1 s Features 0.3­0 0.65 1 0.65 1.3±0.1 +0.1 0.425 3 2 Symbol Ratings Unit VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7 V Peak collector current ICP 200 mA , 1 2SD1819A Transistor PC - Ta IC - VCE 1200 Ta=25°C 50 160 120 80 40


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PDF 2SD1819A 2SB1218A 2SB1218A 2SD1819A
2003 - Not Available

Abstract:
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1819A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1218A Features · High forward current transfer ratio hFE · Low collector-emitter saturation voltage VCE(sat) · S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape pacing and the , with the RoHS Directive (EU 2002/95/EC). 2SD1819A PC Ta 200 60 IC VCE Ta = 25°C IB = 160 µA


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PDF 2002/95/EC) 2SD1819A 2SB1218A
2003 - 2SB1218A

Abstract:
Text: Transistors 2SD1819A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1218A (0.425) Unit: mm 0.3+0.1 ­0.0 0.15+0.10 ­0.05 1.25±0.10 5° 2.1±0.1 0.9±0.1 · High forward current transfer ratio hFE · Low collector-emitter saturation voltage VCE(sat) · S-Mini type package, allowing downsizing of the equipment and automatic insertion , date: April 2003 SJC00226BED 1 2SD1819A PC Ta IC VCE 120 80 40 1 000 140


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PDF 2SD1819A 2SB1218A 2SB1218A 2SD1819A
2SD1812

Abstract:
Text: 2SD1818 BB LF PA/MS PS* 60 60 3 1. 3 10 10 60 100 400 2 0.6 0.25 1.2 1.5 0.15 2SD1819A «TF G A 60 50 0.1 , -7 0 (S—M INI) BEC 2SD1819A 200* 10 -0.05 15 2SB1219 SC—70 (S—MI NI ) BEC 2SD1820 200


OCR Scan
PDF 2SD1812 2SD1816 2SD1817 2SD1818 2SD1819A 2SD1820 2SD1820A SC-62 2SD1834 2SB1229 2SD1823 2SD1821A 2SD1821 2SD1819A GV 269
zr smd

Abstract:
Text: Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SD1819A Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V Peak collector current ICP 200 mA Collector current IC 100 mA


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PDF 2SD1819A 100mA, 200MHz zr smd 2SD1819A hFE CLASSIFICATION Marking marking ZR smd ZR
Not Available

Abstract:
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1819A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1218A (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 5˚ 0.2±0.1 2 d pla inc Pl ea ne lud se pla m d m es vis ne ain ain foll htt it d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c , Directive (EU 2002/95/EC). 2SD1819A PC  Ta IC  VCE 1 200 Ta = 25°C VCE = 10 V Ta = 25Â


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PDF 2002/95/EC) 2SD1819A 2SB1218A
te 1819

Abstract:
Text: 2SC4118 2SC4118 2SC4U7 2SC4210 2SD1414 2SW693 2SD1251 2SD1261 2SC2594 2SD1819A 2SC4155 2SC4155 2SD1506


OCR Scan
PDF 2SD1813 2SD1814 2SD1667 2SD1406 2SD2107 2SD2105 2SD1267 2SD1445A 2SD1250 2SC4331 te 1819 2SD1878 2SD1649 2sd1856 2SC4211 2SD1406 2SD1250 2SD1223 2SC4723
2003 - 2SB1218A

Abstract:
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1819A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1218A (0.425) Unit: mm 0.3+0.1 ­0.0 0.15+0.10 ­0.05 1.25±0.10 2.1±0.1 0.9±0.1 5° M Di ain sc te on na tin nc ue e/ d · High forward current transfer ratio hFE · Low collector-emitter saturation voltage , 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1819A PC Ta IC VCE


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PDF 2002/95/EC) 2SD1819A 2SB1218A 2SB1218A 2SD1819A
2003 - Not Available

Abstract:
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1819A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1218A Features · High forward current transfer ratio hFE · Low collector-emitter saturation voltage VCE(sat) · S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape pacing and the , with the RoHS Directive (EU 2002/95/EC). 2SD1819A PC Ta 200 60 IC VCE Ta = 25°C IB = 160 µA


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PDF 2002/95/EC) 2SD1819A 2SB1218A
Not Available

Abstract:
Text: Transistors IC SMD Type Product specification 2SD1819A Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V Peak collector current ICP 200 mA Collector current IC 100 mA


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PDF 2SD1819A 100mA, 200MHz
2010 - Not Available

Abstract:
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SD1819A TRANSISTOR (NPN) FEATURES SOT–323  High DC Current Gain  Complementary to 2SB1218A  Low Collector to Emitter Saturation Voltage APPLICATIONS  General Purpose Amplification 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. EMITTER Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50


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PDF OT-323 2SD1819A 2SB1218A 100mA, 200MHz
mn171603

Abstract:
Text: / 2SD1819A , etc. 25 23- - Pianaaonle


OCR Scan
PDF UN2000T 2SB710A/2SD602A, MA165, MA786, MA723, N187324 AN8523S ANB941SB AN8916FBP MN8881 mn171603 AN3815K AN3452FBS Mini servo motor AN3893FHP mini servo motor driver MN1873223 MN187324 audio remote control
2sc4640

Abstract:
Text: 2SC 4790 s s 2SC1621 2SD1819A 2SC3052 2SD2114K 2SC 4791 s iL 2SC4873 2SC4095 2SC4805 2SC


OCR Scan
PDF 2SC4406 2SC4244 2SC4463 2SC3932 2SC4407 2SC4250 2SC4670 2SC1815 2SD637 2sc4640 2SC3998 4793 2sd637 2SC1815 2SD1546 C4463 2SC4905 2SC4804 2sc2555
2010 - Not Available

Abstract:
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SB1218A TRANSISTOR (PNP) FEATURES SOT–323  High DC Current Gain  Complementary to 2SD1819A APPLICATIONS  General Purpose Amplification MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 1. BASE Value Unit VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -7 2. EMITTER V IC Collector


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PDF OT-323 2SB1218A 2SD1819A -100mA, -10mA 200MHz
2010 - Not Available

Abstract:
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SB1218A TRANSISTOR (PNP) FEATURES SOT–323  High DC Current Gain  Complementary to 2SD1819A APPLICATIONS  General Purpose Amplification MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 1. BASE Value Unit VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -7 2. EMITTER V IC Collector


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PDF OT-323 2SB1218A 2SD1819A
2SB1218A

Abstract:
Text: 2SB1218A -0.1A , -60V PNP Silicon Epitaxial Paner Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free APPLICATIONS SOT-323 General Purpose Amplification A FEATURES L 3 3 High DC Current Gain Complementary to 2SD1819A C B Top View 1 1 2 K E 2 CLASSIFICATION OF hFE D Product-Rank 2SB1218A-Q 2SB1218A-R 2SB1218A-S Range 160~260 210~340 290~460 Marking BQ1 BR1


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PDF 2SB1218A OT-323 2SD1819A 2SB1218A-Q 2SB1218A-R 2SB1218A-S 14-Feb-2011 -100mA, -10mA 2SB1218A 2SB1218AR 2SB1218A-R 2SB1218A-Q 2SD1819A
4407

Abstract:
Text: 2SC4158 2SC 4449 = ft 2SC2551 2SC4647 2SC3942 2SC3415 2SC 4452 H ft 2SC4667 2SC4176 2SD1819A


OCR Scan
PDF 2SC4253 2SC4179 2SC3931 2SC4154 2SC4100 2SC4247 2SC4186 2SC4410 2SC4083 2SC4245 4407 2SC3885A on 4409 2SC2320 2SC4453 4463 B 4410 4453 4438 2sc752 k
2SD1995

Abstract:
Text: Silicon Small Signal Transistors Application Functions SS-Mini Type (D1 ) I 2SB1462 # General-use Low Frequency Amplifiers and Others Package (No.) S-Mini Type (D5) ' 2SB1218A 2SD1819A : 2SB1219/A i 2SD1820/A Mini Type (D12) ! 2SB709A I 2SD601A i 2SB710/A i 2SD602/A New S Type (034) i 2SA1309A ! 2SC3311A 2SB1030/A i 2SD1423/A TO-92 (D46) M Type (D35) i 2SB642 I 2SD637 TO-92NL (D48) TO-92 L (047) Mini -Power Type (019) V ceo MT1 Type (037) ( 2SB1320A i 2SD1991A fr (MHz


OCR Scan
PDF 2SB1462 2SB1218A 2SD1819A 2SB1219/A 2SD1820/A 2SB709A 2SD601A 2SB710/A 2SD602/A 2SA1309A 2SD1995 2SD1010 2sc5335 2SD1993 2SD2458 2SB642 2SB1446 2SC2631 2SD119 2SD1512
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