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ROHM Semiconductor
2SD1781KT146R Trans GP BJT NPN 32V 0.8A 3-Pin SMT T/R (Alt: 2SD1781KT146R) 2SD1781KT146R ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Avnet (3) 2SD1781KT146R Tape and Reel 15,000 17 Weeks, 1 Days 3,000 - - - - $0.0646 Buy Now
2SD1781KT146R Reel 0 13 Weeks 3,000 - - - - $0.04451 Buy Now
2SD1781KT146R Tape and Reel 0 9 Weeks, 2 Days 3,000 - - - - €0.08352 Buy Now
Allied Electronics & Automation 2SD1781KT146R Bulk 0 300 - - - $0.114 $0.093 Get Quote
Bristol Electronics 2SD1781KT146R 2,500 - - - - - Buy Now
RS Components 2SD1781KT146R Package 0 60 - - $0.318 $0.139 $0.139 Buy Now
Ameya Holding Limited 2SD1781KT146R 0 1 $0.10869 $0.1023 $0.08951 $0.07033 $0.06394 Get Quote
ROHM Semiconductor
2SD1781KT146Q Trans GP BJT NPN 32V 0.8A 3-Pin SMT T/R - Tape and Reel (Alt: 2SD1781KT146Q) 2SD1781KT146Q ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Avnet (3) 2SD1781KT146Q Reel 0 13 Weeks 3,000 - - - - $0.04451 Buy Now
2SD1781KT146Q Tape and Reel 0 9 Weeks, 2 Days 3,000 - - - - €0.08676 Buy Now
2SD1781KT146Q Tape and Reel 0 17 Weeks, 1 Days 3,000 - - - - - Get Quote
CoreStaff 2SD1781KT146Q 1,706 $0.35 $0.29 $0.13 $0.08 $0.08 Buy Now
element14 Asia-Pacific 2SD1781KT146Q 0 1 $0.7 $0.518 $0.294 $0.149 $0.149 Buy Now
Farnell element14 2SD1781KT146Q 0 5 - £0.288 £0.115 £0.0633 £0.0524 Buy Now
ROHM Semiconductor
2SD1781KT146Q. Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:32V; Transition Frequency ft:150MHz; Power Dissipation Pd:200mW; DC Collector Current:800mA; DC Current Gain hFE:120hFE; No. of Pins:3Pins; Operating Temperature Max:- RoHS Compliant: Yes 2SD1781KT146Q. ECAD Model
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Newark element14 2SD1781KT146Q. Reel 0 3,000 $0.048 $0.048 $0.048 $0.048 $0.045 Buy Now
ROHM Semiconductor
2SD1781KFRAT146R TRANSISTOR, AEC-Q101, NPN, 32V, 0.8A; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:32V; Transition Frequency ft:150MHz; Power Dissipation Pd:200mW; DC Collector Current:800mA; DC Current Gain hFE:180hFE; Transistor RoHS Compliant: Yes 2SD1781KFRAT146R ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Newark element14 2SD1781KFRAT146R Cut Tape 0 5 $0.39 $0.295 $0.16 $0.12 $0.12 Buy Now
element14 Asia-Pacific 2SD1781KFRAT146R 0 5 - $0.423 $0.229 $0.172 $0.148 Buy Now
Farnell element14 (2) 2SD1781KFRAT146R 0 5 - £0.265 £0.13 £0.082 £0.0803 Buy Now
2SD1781KFRAT146R 0 5 - £0.265 £0.13 £0.082 £0.0803 Buy Now
ISC
2SD1781K SOT23 2SD1781K ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Karl Kruse GmbH & Co KG 2SD1781K 5,000 - - - - - Get Quote

2SD1781K datasheet (12)

Part ECAD Model Manufacturer Description Type PDF
2SD1781K 2SD1781K ECAD Model Kexin Medium Power Transistor Original PDF
2SD1781K 2SD1781K ECAD Model ROHM Medium Power Transistor (32V, 0.8A) Original PDF
2SD1781K 2SD1781K ECAD Model TY Semiconductor Medium Power Transistor - SOT-23 Original PDF
2SD1781K 2SD1781K ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
2SD1781K 2SD1781K ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SD1781K 2SD1781K ECAD Model ROHM EM3, UMT, SMT Transistors Scan PDF
2SD1781K 2SD1781K ECAD Model ROHM SOT-23, SOT-89 and D-Pak Transistors Scan PDF
2SD1781KR 2SD1781KR ECAD Model ROHM Medium Power Transistor (32V, 0.8A) Original PDF
2SD1781KT146Q 2SD1781KT146Q ECAD Model ROHM TRANS NPN 32V 0.8A SOT-346 Original PDF
2SD1781KT146Q 2SD1781KT146Q ECAD Model ROHM Medium Power Transistor (32 V, 0.8 A) Original PDF
2SD1781KT146R 2SD1781KT146R ECAD Model ROHM TRANS NPN 32V 0.8A SOT-346 Original PDF
2SD1781KT146R 2SD1781KT146R ECAD Model ROHM Medium Power Transistor (32 V, 0.8 A) Original PDF

2SD1781K Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - NPN Transistor 8A

Abstract: Silicon NPN Epitaxial Planar Power Transistor 2SD1781K transistor t-04 transistor SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE 2sb1197k NPN Silicon Epitaxial Planar Transistor 2SD178 Transistor npn
Text: Transistors Medium Power Transistor (32V, 0.8A) 2SD1781K FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the 2SB1197K. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN , 2SD1781K FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE hFE values are classified as follows : FElectrical characteristic curves 269 Transistors 270 2SD1781K


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PDF 2SD1781K 500mA 2SB1197K. 96-220-D92) NPN Transistor 8A Silicon NPN Epitaxial Planar Power Transistor 2SD1781K transistor t-04 transistor SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE 2sb1197k NPN Silicon Epitaxial Planar Transistor 2SD178 Transistor npn
Not Available

Abstract: No abstract text available
Text: 2SD1781K Transistors Medium Power Transistor (32V, 0.8A) 2SD1781K External dimensions (Unit : mm) Features 1) Very Low VCE(sat). VCE(sat) = /0.1V(Typ.) IC / IB= 500 A / 50mA 2) High , 2SD1781K Transistors Electrical characteristics (Ta=25flC) Symbol Min. Typ. Max. Unit , unit (pieces) 3000 Package Type hFE 2SD1781K QR Electrical characteristic curves , .3 DC current gain vs. collector current Rev.A 2/3 2SD1781K Ta=25°C 500 200 100 IC


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PDF 2SD1781K 2SB1197K. SC-59
TRANSISTOR BC 252

Abstract: BC transistor series
Text: 2SD1781K Transistor, NPN Features · · · · available in SMT3 (SMT, SC-59) package package marking: 2SD1781K ; AF-*, where is hFE code extremely low collector saturation voltage Dimensions (Units : mm) 2SD1781K (SMT3) 0.96 0.96 24 even though it is in a small package, it can draw , , 2SD series 2SD1781K Electrical characteristics (unless otherwise noted, Ta = 25°C) Parameter Col , R E N T : IC (m A) Figure 1 Figure 2 Surface Mount Transistors MNm 253 2SD1781K


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PDF 2SD1781K SC-59) 2SD1781K; 2SD1781K TRANSISTOR BC 252 BC transistor series
2SD1781K

Abstract: transistor afr Transistor marking 0.5
Text: cycle 2% DEVICE MARKING: 2SD1781K=AFR SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA 2SD1781K NPN EPITAXIAL SILICON TRANSISTOR 2SD1781K - , 2SD1781K SEMICONDUCTOR TECHNICAL DATA LOW FREQUENCY TRANSISTOR * Feature: NPN EPITAXIAL SILICON TRANSISTOR Shandong Yiguang Electronic Joint stock Co., Ltd Package:SOT-23 (1) Very Low Vce(sat) Vce<0.4V (Ic/Ib= 500mA/50mA) (2) High current capacity in compact package (3) Complements


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PDF 2SD1781K OT-23 500mA/50mA) 2SB1197K 100mA 500mA -50mA 100MHZ 062in 300uS 2SD1781K transistor afr Transistor marking 0.5
2sb1147

Abstract: No abstract text available
Text: Transistors Medium Power Transistor (32V, 0.8A) 2SD1781K ·Features 1) Very low VcE(sai). VcE(sat) = - 0.13V (Typ.) ( Ic / I b 2 .9 ± 0 .2 1.9±0.2 0.950.95 ^External dim ensions (Units: mm , cbo BV ceo BV ebo ICBO I ebo VCE(sat) 2SD1781K Min. 40 32 Typ. - - Max. - - - 0.5 , - - pF ·P a c k a g in g specifications and hre Package Code Type 2SD1781K hFE hFE values , Bi-polar transistors o Transistors 2SD1781K Fig.4 Collector-emitter saturation voltage vs


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PDF 2SD1781K 2SB1147K. SC-59 2sb1147
marking AFR

Abstract: No abstract text available
Text: 2SD1781K SOT-23-3L Transistor(NPN) 1. BASE 2. EMITTER 3. COLLECTOR SOT-23-3L 2.92 0.35 1.17 Features 2.80 1.60 Low voltage High saturation current capability 0.15 1.90 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction , 2SD1781K SOT-23-3L Transistor(NPN) Typical Characteristics 2SD1781K SOT-23-3L Transistor(NPN


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PDF 2SD1781K OT-23-3L OT-23-3L 100mA 500mA 100MHz marking AFR
Not Available

Abstract: No abstract text available
Text: 2SD1781K Transistor, NPN Features • available in SMT3 (SMT, SC-59) package • package marking: 2SD1781K ; AF-*, where ★ is hFE code • extremely low collector saturation voltage • even though it is in a small package, it can draw large currents Dimensions (Units : mm) 2SD1781K (SMT3 , – Transistor, NPN, 2SD series 2SD1781K Electrical characteristics (unless otherwise noted, Ta = 25 , EMITTER VOLTAGE O COLLECTOR CURRENT : 1C (mA) 2SD1781K COLLECTOR CURRENT : 1C (mA) COLLECTOR


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PDF 2SD1781K SC-59) 2SD1781K; Q16-o
2004 - Not Available

Abstract: No abstract text available
Text: 2SD1781K NPN General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 Features: *Very Low VCE(sat) V CE(sat) < 0.4 V (Typ.) (I C / IB = 500mA / 50mA) *High Current Capacity in , -Nov-2012 2SD1781K ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max Unit , 180-390 Marking AFQ AFR WEITRON http://www.weitron.com.tw 2/4 14-Nov-2012 2SD1781K Electrical characteristic curves WEITRON http://www.weitron.com.tw 3/4 14-Nov-2012 2SD1781K SOT


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PDF 2SD1781K OT-23 500mA 2SB1197 -50mA, 100MHz 14-Nov-2012
100MHZ

Abstract: 2SB1197K 2SD1781K VCBO-40V
Text: =1X0.75X0.062in Board,Derate 25 . # Pulse Test: Pulse Width DEVICE MARKING: 2SD1781K= 300uS,Duty cycle 2 , 2SD1781K NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR * Feature: (1) Very Low Vce(sat) Vce<0.4V (Ic/Ib= 500mA/50mA) 1. (2) High current capacity in compact package (3) Complements the 2SB1197K Symbol Rating Unit Collector-Emitter Voltage Vceo 32 Vcbo 40 V Collector Current Ic 0.8 A(DC) Collector Dissipation Ta=25 * PD 200 mW


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PDF 2SD1781K 500mA/50mA) 2SB1197K 100mA 500mA -50mA 100MHZ 062in 2SD1781K= 300uS 100MHZ 2SB1197K 2SD1781K VCBO-40V
2008 - Not Available

Abstract: No abstract text available
Text: 2SD1781K Transistors Medium Power Transistor (32V, 0.8A) 2SD1781K External dimensions (Unit : mm) Features 1) Very Low VCE(sat). VCE(sat) = 0.1V(Typ.) IC / IB= 500 A / 50mA 2) High current , temperature Tstg −55 to +150 ∗ °C ∗ Single pulse Pw=100ms Rev.A 1/3 2SD1781K , (pieces) 3000 Package Type hFE 2SD1781K QR Electrical characteristic curves , .3 DC current gain vs. collector current Rev.A 2/3 2SD1781K Ta=25°C 500 200 100 IC


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PDF 2SD1781K 2SB1197K. SC-59
2008 - 2SB1197K

Abstract: 2SD1781K T146
Text: 2SD1781K Transistors Medium Power Transistor (32V, 0.8A) 2SD1781K External dimensions (Unit : mm) Features 1) Very Low VCE(sat). VCE(sat) = 0.1V(Typ.) IC / IB= 500 A / 50mA 2) High current , temperature Tstg -55 to +150 °C Single pulse Pw=100ms Rev.A 1/3 2SD1781K , 2SD1781K QR Electrical characteristic curves COLLECTOR CURRENT : IC (mA) 200 100 50 20 10 , ) Fig.2 25°C -55°C Fig.3 DC current gain vs. collector current Rev.A 2/3 2SD1781K


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PDF 2SD1781K 2SB1197K. SC-59 2SB1197K 2SD1781K T146
2sb1147

Abstract: No abstract text available
Text: Transistors Medium Power Transistor (32V, 0.8A) 2SD1781K # Features 1) Very low VcE(sat). VcE(sat) = -0.13V (Typ.) (Ic / I b 2.9±0.2 1 9 ± 0.2 ·E x te rn a l dim ensions (Units: mm , cbo B V ceo B V ebo ICBO 2SD1781K Min. 40 32 5 Typ. - - - - - - 150 Max. - - - , = 0A, f=1M H z ^Packaging specifications and hFE Package Code Type 2SD1781K hFE hFE values are , . collector current noHm 255 Bi-polar transistors o Transistors 2SD1781K 2 g 5 10


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PDF 2SD1781K 2SB1147K. SC-59 2sb1147
2SB1147

Abstract: No abstract text available
Text: Transistors Medium Power Transistor (32V, 0.8A) 2SD1781K • E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) Very low VcEfsat). 2.9+0.2 VcE(sat) — — 0.13V (Typ.) (Ic /Ib , (96-220-D92) Transistors 2SD1781K • E le c tric a l characteristics (Ta = 25°C) Parameter , classified as follow s : Type hFE 2SD1781K Taping Item Q R Code T146 hFE 1 2 , .3 DC current gain vs. collector current 7TR 255 2SD1781K Transistors Fig


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PDF 2SD1781K 2SB1147K. SC-59 2SB1147
Not Available

Abstract: No abstract text available
Text: h 7 > y X $ / T ransistors 2SD 1781K 2SD1781K X tf £ * > T )V 7° L - ;u K = NPN ' > u p > h 7 > y X $ 4 ,H 2]*rilll«ffl/Mediiim Power Amp. Epitaxial Planar Super Mini-Mold NPN Silicon Transistor • £tff2\fi£|3]/D im ensions (U n it: mm) 1) V c E l s a t l t f ' ^ t C - f i l , Curves v^AVjOcntv. • 2SD1781K Fig 1 Fig. 2 i $ y n m m m m s tti 1000 V « = 5V , „ (pF) 2SD1781K


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PDF 1781K 2SD1781K Ul/72
transistor afr

Abstract: AFR marking 2SD1781K afr 05 transistor afr 60
Text: 2SD1781K SOT-23-3L 2SD1781K TRANSISTOR (NPN) 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25) Collector current A 0. 35 0.8 1. 60¡ À0. 05 1. 9 ICM 2. 80¡ À 05 0. 2. 92¡ À0. 05 200 0. 95¡ À 025 0. PCM: Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP


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PDF 2SD1781K OT-23-3L 100mA 500mA, 100MHz transistor afr AFR marking 2SD1781K afr 05 transistor afr 60
2004 - 2SB1197K

Abstract: 2SD1781K T146
Text: 2SD1781K Transistors Medium Power Transistor (32V, 0.8A) 2SD1781K External dimensions (Unit : mm) Features 1) Very Low VCE(sat). VCE(sat) = -0.1V(Typ.) IC / IB= 500A / 50mA 2) High current , Tstg -55 to +150 °C Single pulse Pw=100ms Rev.A 1/3 2SD1781K Transistors , 2SD1781K QR Electrical characteristic curves COLLECTOR CURRENT : IC (mA) 200 100 50 20 10 , /3 2SD1781K Ta=25°C 500 200 100 IC/IB=50 50 20 20 10 10 5 1 2 5


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PDF 2SD1781K 2SB1197K. SC-59 2SB1197K 2SD1781K T146
2008 - Not Available

Abstract: No abstract text available
Text: 2SD1781KFRA 2SD1781K Transistors Medium Power Transistor (32V, 0.8A) AEC-Q101 Qualified 2SD1781K 2SD1781KFRA External dimensions (Unit : mm) Features 1) Very Low VCE(sat). VCE(sat) = 0.1V , ∗ ∗ Single pulse Pw=100ms Rev.A 1/3 2SD1781KFRA 2SD1781K Transistors Electrical , hFE 2SD1781KFRA QR 2SD1781K Electrical characteristic curves 200 100 50 20 10 5 2 1 , current Rev.A 2/3 2SD1781KFRA 2SD1781K Ta=25°C 500 200 100 IC/IB=50 50 20 20


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PDF 2SD1781KFRA 2SD1781K AEC-Q101 2SB1197K. 2SB1197K SC-59
1998 - Not Available

Abstract: No abstract text available
Text: Transistors Medium Power Transistor (32V, 0.8A) 2SD1781K FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the 2SB1197K. FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units , characteristics (Ta = 25_C) 2SD1781K FPackaging specifications and hFE hFE values are classified as follows : FElectrical characteristic curves 269 Transistors 2SD1781K 270 Appendix


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PDF 2SD1781K 500mA 2SB1197K. 96-220-D92)
2006 - 2SD1781K

Abstract: afr 05 transistor afr
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SD1781K SOT-23-3L TRANSISTOR (NPN) FEATURES Low voltage High saturation current capability 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 , 2SD1781K Jiangsu Changjiang Electronics Technology


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PDF OT-23-3L 2SD1781K OT-23-3L 100mA 500mA 100MHz 2SD1781K afr 05 transistor afr
100MHZ

Abstract: 2SB1197K 2SD1781K
Text: =1X0.75X0.062in Board,Derate 25 . # Pulse Test: Pulse Width 300uS,Duty cycle 2% DEVICE MARKING: 2SD1781K= , 2SD1781K NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR * Feature: (1) Very Low Vce(sat) Vce<0.4V (Ic/Ib= 500mA/50mA) 1. (2) High current capacity in compact package (3) Complements the 2SB1197K Symbol Rating Unit Collector-Emitter Voltage Vceo 32 Vcbo 40 V Collector Current Ic 0.8 A(DC) Collector Dissipation Ta=25 * PD 200 mW


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PDF 2SD1781K 500mA/50mA) 2SB1197K 100mA 500mA -50mA 100MHZ 062in 300uS 2SD1781K= 100MHZ 2SB1197K 2SD1781K
marking AFQ

Abstract: 2SB1197K 2SD1781K transistor afr
Text: 2SD1781K NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES A L Very low VCE(sat).VCE(sat) < 0.4 V (Typ.) (IC /IB = 500mA / 50mA) Complements to 2SB1197K Collector 3 3 3 C B Top View 1 1 2 K 2 E 2 Base D 1 Emitter F G , changes of specification will not be informed individually. Page 1 of 2 2SD1781K Elektronische


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PDF 2SD1781K OT-23 500mA 2SB1197K 100mA, 500mA, 100MHz 01-June-2002 marking AFQ 2SB1197K 2SD1781K transistor afr
SC64

Abstract: 2SD1796 2SD1775 2SD1774A 2SD1774 2SD1773 2SD1772A 2SD1772 2SD1808A 2SD1771
Text: 0.1 40 800 3200 5 1 0.3 1. 2 1 0.01 2SD1781K a —A PA 40 32 0.8 0.2 0.5 20 82 390 3 0.1 0.4 0. 5 0 , 2SD1781K 180* 10 0.05 7. 5* 2SBU98K (SC-59A) EBC 2SD1782K 75* T0-220ABJFJ BCE, Da/R


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PDF 2SD1771 2SD1771A 2SD1772 2SD1772A 2SD1773 2SD1774 2SD1774A 2SD1796 SC-67 2SD1797 SC64 2SD1796 2SD1775 2SD1808A
2004 - Not Available

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SD1781K TRANSISTOR (NPN) 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) Collector current A 0. 35 0.8 1. 60¡ À0. 05 1. 9 ICM℃ 2. 80¡ À 05 0. 2. 92¡ À0. 05 200 0. 0. 95¡ À 025 PCM: Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range TJ Tstg: -55℃ to +150℃


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PDF OT-23-3L OT-23-3L 2SD1781K 100mA 500mA, 100MHz
1032B

Abstract: 2SD845 2SD813 2SD1010 nec 1021 2SC3622 2SD1034 1053 2SC2389 2SC2710
Text: 2SD1781K 2SD1227M 2SD1943 2SD1943 = a t ö 3 Ï B æ a T S B 2SD1197 2SD1060 2SD1060 2SC3233


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PDF 2SD1011 2SD1012 2SD1017 2SD1018 2SD1020 2SD1021 2SD1022 2SC3622 2SC3069 2SC3495 1032B 2SD845 2SD813 2SD1010 nec 1021 2SC3622 2SD1034 1053 2SC2389 2SC2710
smd transistor marking af

Abstract: 2SD1781K
Text: Transistors IC SMD Type Medium Power Transistor 2SD1781K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 High current capacity in compact package. +0.1 1.3-0.1 +0.1 2.4-0.1 Very Low VCE(sat).VCE(sat) = -0.1V(Typ.) IC / IB= 500mA / 50mA 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit


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PDF 2SD1781K OT-23 500mA 500mA/50mA 100mA -50mA, 100MHz smd transistor marking af 2SD1781K
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