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2SD1761 2SD1761 ECAD Model
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Bristol Electronics 2SD1761 376 3 - $1.875 $0.7031 $0.525 $0.525 More Info

2SD1761 datasheet (8)

Part ECAD Model Manufacturer Description Type PDF
2SD1761 2SD1761 ECAD Model Various Russian Datasheets Transistor Original PDF
2SD1761 2SD1761 ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
2SD1761 2SD1761 ECAD Model Others Transistor Substitution Data Book 1993 Scan PDF
2SD1761 2SD1761 ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SD1761 2SD1761 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SD1761 2SD1761 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SD1761 2SD1761 ECAD Model ROHM TRIPLE DIFFUSED PLANAR NPN SILICON TRANSISTOR Scan PDF
2SD1761 2SD1761 ECAD Model ROHM NPN SILICON TRANSISTOR Scan PDF

2SD1761 Datasheets Context Search

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2sd1761

Abstract: No abstract text available
Text: > v 7, $ / T ransistors S 2SD1761 '> u = i> npn t£ J i It if tiitlffl/ L o w Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • \ t ' ; £ 0 / Dimenslons (U n it , 160-320 Type 2SD1761 660 ■: m * & F noHm HI Li. .C h FE pA C0b = 7 , ebo □ V DEF <): m m & ) hM ' Y2 200 © h >v $ / I ransistors 2SD1761 , n sisto rs 2SD1761


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PDF 2SD1761 2SB1187. 2sd1761
2sd1761

Abstract: No abstract text available
Text: 2SD1761 (NPN) TO-220F Bipolar Transistors TO-220F 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Low collector saturation voltage: Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A Excellent current characteristics of DC current gain. Large collector power dissipation: PC=30W(TC=25) Complementary pair with 2SB1187 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC pC TJ Tstg Collector-Base , =1MHz CLASSIFICATION OF Rank Range hFE(1) D 60-120 E 100-200 F 160-320 2SD1761 (NPN) TO-220F Bipolar Transistors


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PDF 2SD1761 O-220F O-220F 2SB1187
2SD1761

Abstract: 2SB1187
Text: SavantIC Semiconductor Product Specification 2SD1761 Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Complement to type 2SB1187 ·Wide safe operating area APPLICATIONS ·For low frequency power amplifier applications PINNING PIN , Semiconductor Product Specification 2SD1761 Silicon NPN Power Transistors CHARACTERISTICS Tj , Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 2SD1761


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PDF 2SD1761 O-220Fa 2SB1187 O-220Fa) 2SD1761 2SB1187
2SD1761

Abstract: 2SB1187 2sb118
Text: Inchange Semiconductor Product Specification 2SD1761 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Complement to type 2SB1187 ·Wide safe operating area APPLICATIONS ·For low frequency power amplifier applications PINNING PIN , Inchange Semiconductor Product Specification 2SD1761 Silicon NPN Power Transistors , Specification 2SD1761 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions


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PDF 2SD1761 O-220Fa 2SB1187 O-220Fa) 2SD1761 2SB1187 2sb118
2007 - 2SD1761

Abstract: 2SB1187
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD1761 TRANSISTOR (NPN) TO-220F 1. BASE FEATURES Low collector saturation voltage: Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A Excellent current characteristics of DC current gain. Large collector power dissipation: PC=30W(TC=25) Complementary pair with 2SB1187 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA , hFE(1) D E F 60-120 100-200 160-320 Typical Characteristics 2SD1761


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PDF O-220F 2SD1761 O-220F 2SB1187 2SD1761 2SB1187
2SB1187

Abstract: 2SD1761 2SB1187 transistor
Text: ROHM CO LTD 4QE D 7 0 2 0 ^ QDQS^Sö 2 E 3 RHM h ÿ > > !Z $ / I ransistors 2SD1761 7 fS 2 -ö 9 2SD1761 1) V CE ( s a t) = 0 .3 V (T y p .) E.MfàËky'l'-J-M NPN y ' J lÊ ü iî& lilf r iiÎIf fl/L o w Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor · f t f t ^ t jil il/ D i m e n s io n s (U nit : mm) (at Ic / I b = 2A /0.2A ) 2) hFEc o ^ M i 1 4 ^ n r i ' 5 o , /" H u T si Sü o 00 I CO I 0 BRHM 2SD1761 ll <43 Hi 3


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PDF 2SD1761 2SB1187 2SB1187. 2SD1761 2SB1187 transistor
2SD1761

Abstract: 2SB1187 TRANSISTOR NPN, p2a 2SD1781 2Sd178 2SB1187 transistor le2a
Text: b 7 > is * 9 /Transistors 2SD1761 2SD1761 • Wft 1) Vci(«,-03V(Typ) LC*. (at lc /ie*=2A/0 2A) 2) 3) PC=30W Tc-25X:L • Features 1) Lo* collector saturation voltage Vc*«q=0 3V (Typ). lc/l«=2A/0 2A 2) Excellent current characteristic* of DC current gain 3} Large collector dissipation PC=30W (Tc*"25*C) 4) Complementary pair with 2SB1187 • / Absolute Maximum Ratings (Ta = 25C) Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • £11; <£09/Dimensions (Unit: mm


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PDF 2SD1761 Tc-25X 2SB1187 09/Dimensions -55-ISO lc/le-2A/02A /1C-3V/05A 2SD1781 2SD1761 2SB1187 TRANSISTOR NPN, p2a 2SD1781 2Sd178 2SB1187 transistor le2a
2SB1187

Abstract: 2SB1187 transistor 2SD1761
Text: h7 > y 2 S B 1 /Transistors 2SB1187 '> u = i> 1 8 7 1BJiil£1t:fr^1iffl/Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor · tftjk 1) Pc = 3 0 W (T c = 2 5 "C ) 2) A S O A ^ jK l'o · f t f f M & H / D im e n s io n s (U n it: mm) S i > 4 V; v \J l-7- 3) 2SD1761 4) 7 - f «>, T '* 5 0 K f l o t I ' S t 0 · Features 1) Large co lle cto r p o w e r dissipation: PC= 30W (Tc=25°C ) 2) W ide ASO. 3) C o m plem entary pair w ith 2SD1761. 4) Easily insulated from


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PDF 2SB1187 2SD1761 2SD1761. 2SB1187 2SB1187 transistor
2SD1761

Abstract: 2S01761 2sd1764 2SD1749 2SD1748A 2SD1748 2SD1747A 2SD1747 2SD1746 2SD1760F5
Text: . 2 2SD1760F5 n —A LF PA 60 50 3 1 15 1 40 82 390 3 0. 5 1 2 0.2 2SD1761 n —A LF PA 80 60 3 30 , * 2SB1187 (TO-220FP) BCE 2SD1761 90* 5 0.5 40* 2SB1185 (TO-220FP) BCE 2SD1762 80* 5 0.1 20


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PDF 2SD1746 2SD1747 2SD1747A 2SD1748 2SD1748A 2SD1749 2SD1749A 2SB1183 SC-63 2SD1759F5 2SD1761 2S01761 2sd1764 2SD1747 2SD1760F5
2S01761

Abstract: 2SB1187 2SD1761 T0220FP
Text: h-7 >it* 9 /Transistors 2SBÎ187 2SB1187 • H* 1) PC-30W(TC-25T:)£:*?V», 3) 2S01761 4) KTBoTi* • Features 1) LafQ« collector dissipation PC=30W fTc-25°C) 2) Wide ASO 3) Complementary pair *ntti 2SD1761 4) Full-moid covered fm enables easy insulation from neat sink Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • Dimension« (Unil: mm) T0220FP • lftii«*g«/Absohjte Maximum Ratings (Ta=25C) Parameter Symtx* Lkiwift Un« -"i-xmis Vcoo -60 V 31/75 - 1Î7?IW5 Veto -«0 V


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PDF 2SB1187 PC-30W TC-25T: 2S01761 fTc-25Â 2SD1761 T0220FP --60V A/-02A -2A/-02A 2S01761 2SB1187 2SD1761 T0220FP
2005 - 2SD1761

Abstract: 2SB1187
Text: JMnic Product Specification 2SB1187 Silicon PNP Power Transistors DESCRIPTION With TO-220Fa package Low saturation voltage Complement to type 2SD1761 Excellent DC current gain characteristics Wide safe operating area APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter


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PDF 2SB1187 O-220Fa 2SD1761 2SD1761 2SB1187
2010 - 2SD369A

Abstract: to-53 2SC1025 MJE2491 KT816V matsua
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V(BR)CEO PD Max hFE Min fT (Hz) 'CBO r (CE)Mt ·Oper Max (A) on 60 60 60 60 60 60 60 60 60 60 ON) (A) Max (s) Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) 2N4232 2SB761 2SB929 2SB941 2SD1266 2SD856 2SD1761 2SD1761 BDT31A BDT31A BDT32A BDT32A SSP62A SSP64A 2N1886 2N2828 2N2829 2N3200 MJE31A MJE32A BD577 BD578 2SB1033 2SB1033 2SD1437 2SD1437 2SD1943 (A) 2SD1259


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PDF 2N4232 2SB761 2SB929 2SB941 2SD1266 2SD856 2SD1761 BDT31A 2SD369A to-53 2SC1025 MJE2491 KT816V matsua
2SB1187

Abstract: 2SD1761 Silicon Power Transistors
Text: Product Specification www.jmnic.com 2SB1187 Silicon Power Transistors DESCRIPTION With TO-220Fa package Low saturation voltage Complement to type 2SD1761 Excellent DC current gain characteristics Wide safe operating area APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARAMETER CONDITIONS VALUE UNIT


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PDF 2SB1187 O-220Fa 2SD1761 O-220Fa) 2SB1187 2SD1761 Silicon Power Transistors
2SB1187

Abstract: 2SB1187 transistor 2SD1761
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1187 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -60V(Min.) ·Wide Area of Safe Operation ·Complement to Type 2SD1761 APPLICATIONS ·Designed for low frequency power amplifier applications. .cn mi e ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER scs .i VALUE ww w VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO UNIT -60 V -60 V


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PDF 2SB1187 2SD1761 2SB1187 2SB1187 transistor 2SD1761
2SB1187

Abstract: 2SD1761
Text: Inchange Semiconductor Product Specification 2SB1187 Silicon PNP Power Transistors DESCRIPTION With TO-220Fa package Low saturation voltage Complement to type 2SD1761 Excellent DC current gain characteristics Wide safe operating area APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base OND IC Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO SEM GE PARAMETER TOR UC VALUE UNIT


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PDF 2SB1187 O-220Fa 2SD1761 2SB1187 2SD1761
2SB1187

Abstract: 2SD1761 2sb118
Text: SavantIC Semiconductor Product Specification 2SB1187 Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·Low saturation voltage ·Complement to type 2SD1761 ·Excellent DC current gain characteristics ·Wide safe operating area APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage


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PDF 2SB1187 O-220Fa 2SD1761 2SB1187 2SD1761 2sb118
2SD2037

Abstract: 2SD2036 2SC4354 2sd2041 2SB1294 2SB1293 2SD2034 2sd1856 2SD1832 2sd2035
Text: 60 5 40 8 60-320 TO-220 Fig. 24 2SD1761 60 3 30 8 60-320 T0-220FP Fig. 25 2SD1762 50 3 25 90


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PDF O-220, O-22QFP 2SB1293 T0-220 2SB1294 T0-220FP 2SB1334 O-220 2SB1335 2SD2037 2SD2036 2SC4354 2sd2041 2SD2034 2sd1856 2SD1832 2sd2035
2SD2037

Abstract: J0801 2SC4354 2SD1761 2SB1294 2SB1293 2SD2034 2sd1856 2SD1832 2SB1353
Text: 60 5 40 8 60-320 TO-220 Fig. 24 2SD1761 60 3 30 8 60-320 T0-220FP Fig. 25 2SD1762 50 3 25 90


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PDF O-220, O-22QFP 2SB1293 T0-220 2SB1294 T0-220FP 2SB1334 O-220 2SB1335 2SD2037 J0801 2SC4354 2SD1761 2SD2034 2sd1856 2SD1832 2SB1353
2SB1187

Abstract: 2SD1761 2SB1187 transistor
Text: ROHM CO LTD -h "7 > v 7, £/Transistors 4QE D 7020=1=1=1 ODDSSfll 3 ESRHN 2SB1187 - 7^31-11 fi^sftS^jiSififfl/Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • Wfi\|">i@/Dimensions (Unit: mm) • «ft 1) Pc=30W(Tc=25°C) 2) 3) 2SD1761t=l >yjT'i>5o 4) », Mf&mttDmm*®^ • Features 1) Large collector power dissipation: PC=30W (Tc=25°C) 2) Wide ASO. 3) Complementary pair with 2SD1761. 4) Easily insulated from the heat dissipation plate as the fin is molded. i-^t- - 1 -l-U 3, M 2 54 -i- .1. il2 54 '


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PDF 2SB1187 2SD1761t 2SD1761. O-22QFP 2SD1761 2SB1187 transistor
2SB1220

Abstract: 2sb1216 2SD1761 2SB1190A 2SB1189 2SB1208 2SB1186 2SB1184 2SD1812 2SB1204
Text: * 2SD1761 (TO-220FP) BCE 2SB1187 100* -5 -0.5 50* 2SD1766 SC—62 ECB 2SB1188 100* -10 -0.05 14


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PDF 2SB1184 2sb1184f5 2SBU85 2SB1186 2sb1186a 2sb1187 2SB1188 2SB1209 2SD1812 SC-51 2SB1220 2sb1216 2SD1761 2SB1190A 2SB1189 2SB1208 2SB1204
2SD1292

Abstract: 2SA1038 834x
Text: (TO -220) 2SB1064 (TO -220) 2SD1761 (TO -220FP) 2SD1762 (TO -220F P) 2SB1186 (TO -220FP) 2SB1185 (TO , 1437 f l O -2 2 0 ) 2SD1562 (TO -2 2 0 ) 2SB1085 (TO -2 2 0 ) 2SB1064 (TO -2 2 0 ) 2SD1761 (TO -220FP


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PDF 2SD1761 -220FP) 2SD1762 2SB1186 2SB1185 2SB1181 04X1CT® 2SD1292 2SA1038 834x
2N2222A-PL

Abstract: 2sc3883 2sc9018 BF759 2N3055-DIV SS8050 smd 2SC945 smd 2S-C3883 smd 2n3055 bu415a
Text: 2SC3746 80 5 20 4 T0220 2SC3851 80 4 25 15 T0220 2SD1273 80 3 40 T0220 2SD1761 80 3 35 T0220 2SD2061


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PDF BFP520 OT343R BFG410W BFP405 BFP420 BFP450 2N2222A-PL 2sc3883 2sc9018 BF759 2N3055-DIV SS8050 smd 2SC945 smd 2S-C3883 smd 2n3055 bu415a
2SD1966

Abstract: 2SD1255M 2SB maintenance IMB6 2SC2808
Text: 2SD1733 2SD1733F5 2SD1757K 2SD1758 2SD1758F5 2SD1759 2SD1759F5 2SD1760 2SD1760F5 2SD1761 2SD1762 2SD1763 , / Under Development Function Type 2SD1580 2SD1720 2SD1761 2SD1762 2SD1763 VcEO (V) 80 60 60 50


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PDF 2SA785 2SA790 2SA790M 2SA806 2SA821 2SA825 2SA825S 2SA83Û 2SA830S 2SA854 2SD1966 2SD1255M 2SB maintenance IMB6 2SC2808
STRS6307

Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
Text: -220F 2SD1756 TO-220 2SD1883 TO-3PML 2SD2025 TO-220Fa 2SD2107 TO-220F 2SD1761 TO-220F 2SD1884 TO


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PDF 2N3054 2N32741 2N4240 2N4908 2N3054A 2N3766 2N4273 2N4909 2N3055 2N3767 STRS6307 STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
FN1016

Abstract: 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016
Text: 2SD1703 2SD1710 2SD1711 2SD1714 2SD1739 2SD1758 2SD1760 2SD1761 2SD1762 2SD1764 2SD1765 2SD1783


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PDF 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 2N2222A 2N2369 2N2369A FN1016 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016
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