The Datasheet Archive

SF Impression Pixel

Search Stock

ROHM Semiconductor
2SD1760TLR Trans GP BJT NPN 50V 3A 3-Pin(2+Tab) CPT T/R - Tape and Reel (Alt: 2SD1760TLR) 2SD1760TLR ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet Americas 2SD1760TLR 0 20 Weeks 2,500 - - - - $0.40638 More Info
ComS.I.T. 2SD1760TLR 392 - - - - - More Info
ROHM Semiconductor
2SD1760TLQ Trans GP BJT NPN 50V 3A 3-Pin(2+Tab) CPT T/R - Tape and Reel (Alt: 2SD1760TLQ) 2SD1760TLQ ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet Americas 2SD1760TLQ 0 20 Weeks 2,500 - - - - $0.30426 More Info
Avnet Asia 2SD1760TLQ 0 18 Weeks 2,500 - - - - - More Info
ROHM Semiconductor
2SD1760TLP Trans GP BJT NPN 50V 3A 3-Pin(2+Tab) CPT T/R - Tape and Reel (Alt: 2SD1760TLP) 2SD1760TLP ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet Americas 2SD1760TLP 0 20 Weeks 2,500 - - - - $0.39149 More Info

2SD1760 datasheet (26)

Part ECAD Model Manufacturer Description Type PDF
2SD1760 2SD1760 ECAD Model Kexin Medium Power Transistor Original PDF
2SD1760 2SD1760 ECAD Model ROHM Power Transistor (50V, 3A) Original PDF
2SD1760 2SD1760 ECAD Model ROHM Power Transistor Original PDF
2SD1760 2SD1760 ECAD Model TY Semiconductor Medium Power Transistor - TO-252 Original PDF
2SD1760 2SD1760 ECAD Model Various Russian Datasheets Transistor Original PDF
2SD1760 2SD1760 ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
2SD1760 2SD1760 ECAD Model Others Transistor Substitution Data Book 1993 Scan PDF
2SD1760 2SD1760 ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SD1760 2SD1760 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SD1760 2SD1760 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SD1760 2SD1760 ECAD Model ROHM Power Transistor (50V, 3A) Scan PDF
2SD1760 2SD1760 ECAD Model ROHM CPT, TO-126, TO-126FP Transistors Scan PDF
2SD1760 2SD1760 ECAD Model ROHM SOT-23, SOT-89 and D-Pak Transistors Scan PDF
2SD1760 2SD1760 ECAD Model ROHM Transistor Selection Guide Scan PDF
2SD1760 2SD1760 ECAD Model ROHM CPT / TO-126 / TO-126FP Transistors Scan PDF
2SD1760F5 2SD1760F5 ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
2SD1760F5 2SD1760F5 ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SD1760F5 2SD1760F5 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SD1760F5 2SD1760F5 ECAD Model ROHM Epitaxial Planar NPN Silicon Transistor Scan PDF
2SD1760Q 2SD1760Q ECAD Model ROHM Power Transistor (50V, 3A) Original PDF

2SD1760 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - 2SB1184

Abstract: 2SB1243 2SD1760 2SD1864
Text: 2SD1760 / 2SD1864 Transistors Power Transistor (50V, 3A) 2SD1760 / 2SD1864 !External dimensions (Units : mm) 2SD1760 2SD1864 1.0±0.2 Limits (1) Base (2) Collector (3) Emitter , 2SD1760 (2) 2.54 2.54 Collector-base voltage Collector power dissipation (1) (1) (2) (3 , 2SD1760 / 2SD1864 Transistors !Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max , hFE 2SD1760 TL 2500 Basic ordering unit (pieces) TV2 2500 PQR 2SD1864 hFE


Original
PDF 2SD1760 2SD1864 2SD1760 SC-63 65Max. 2SB1184 2SB1243 2SD1864
1 w NPN EPITAXIAL PLANAR TYPE

Abstract: 2SD1760 2SD1864
Text: Transistors 2SD1760 / 2SD1864 Power Transistor (50V, 3A) 2SD1760 / 2SD1864 •Features 1 , . •Structure Epitaxial planar type NPN silicon transistor •External dimensions (Unite : mm) 2SD1760 2.3 , Collector current Ic 3 A (DC) 4.5 A (Pulse) *1 Collector power 2SD1760 Pc 15 W (Tc =25°C)*2 , . nmm 7020^1 ÜÜSM4MD GTb 2SD1760 / 2SD1864 Transistors •Electrical characteristics (Ta = 25eC , Basic ordering unit (pieces) 2500 2500 2SD1760 PQR O ' - 2SD1864 PQR - I O hFE values are classified


OCR Scan
PDF 2SD1760 2SD1864 2SB118412SB1243. 2SD1760 SC-63 1 w NPN EPITAXIAL PLANAR TYPE 2SD1864
transistor B502

Abstract: 2SD1760 2SB11
Text: .) 2SD1760 B.5+0.2^ 2 3 + 0 .2 CCK5 2SD1864 = 2A/0.2A) 2) Complements the 2SB11 8 4 /2SB 1243/2SB , Emitter-base voltage Collector current Collector power dissipation 2SD1760 2SD1864 2SD1762 Symbol VCBO VCEO V , =25"C)*2 W W(Tc=25" C )* 2 °C ·C 2SD1760 /2SD1864/2SD1762 Junction temperature Storage temperature , Emitter cutoff current Collector-emitter saturation voltage 2SD1760 ,2SD1864 DC current transfer ratio , g in g specifications and Package Code Type 2SD1760 2SD1864 2SD1762 hFE Ii f e Taping TL 2500


OCR Scan
PDF 2SD1760 2SD1864 2SB11 1243/2SB 2SD1760) 2SD1864) 10Sec 10OOSec transistor B502 2SD1760
2SD1760

Abstract: 2SB1184 2SB1243 2SD1864
Text: 2SD1760 / 2SD1864 Transistors Power Transistor (50V, 3A) 2SD1760 / 2SD1864 !External , 2.54 Symbol 2SD1760 2SD1864 (1) (1) (2) (3) Collector-base voltage Collector power , -0.1 0.5±0.1 4.4±0.2 C0.5 14.5±0.5 6.5±0.2 5.1 +0.2 -0.1 2.5 1.5±0.3 2SD1760 , 2SD1760 / 2SD1864 Transistors !Electrical characteristics (Ta = 25°C) Symbol Min. Typ. Max , Package Type hFE 2SD1760 TL 2500 Basic ordering unit (pieces) TV2 2500 PQR


Original
PDF 2SD1760 2SD1864 100ms 100mm2 2SD1760 2SD1864) 2SB1184 2SB1243 2SD1864
2SD1760

Abstract: No abstract text available
Text: h "7 > V X $ /Transistors 2SD1760 X fcf$ * > T Jl^ y \s-1rffr NPN > V =l > h =7> v * $ Epitaxal Planar NPN Silicon Transistors 1ftJi}/£1t;fr*8lliffl/L o w Freq. Power Amp. · fl-fti^ fü ll/D im e n s io n s (Uni» : mm) 2SD1760 1) VcE(sat) V c E (s a t) = 0 .5 V ( T y p .) (Ic / I b = 2 A /0 , ) f ï i ; 2SD1760 j , ctrical Characteristic Curves 2SD1760 AMBIENT TEMPERATURE : Ta fC ) CASE TEMPERATURE : Tc ("C


OCR Scan
PDF 2SD1760 2SD1760 2SB1184 2SB1184. 11Base -J91S 09LI-QS2
transistor B 1184

Abstract: 2SD1762 b 1185
Text: using pulse current. 2SD1760.2SD1864 Symbol B V cbo B V ceo B V ebo ICBO Min. 60 50 5 Typ , Transistors Power Transistor (50V, 3A) 2SD1760 /2SD1864/2SD1762 ·F e a tu re s 1) LOW VcE(sat , power dissipation 2SD1760 2SD1864 2SD1762 Symbol VCBO V ceo V ebo 2SD1760 /2SD1864/2SD1762 Limits , MHz PF Cob · P a c k a g in g specifications and hFE Package Code Type 2SD1760 2SD1864 2SD1762 , le c tric a l characteristic curves 2SD1760 /2SD1864/2SD1762 COLLECTOR TO EMITTER VOLTAGE :V C c


OCR Scan
PDF 2SD1760/2SD1864/2SD1762 1184/2S 1243/2S 96-214-D57) 2SD1760 2SD1864 2SD1762 transistor B 1184 b 1185
1998 - 2SD1760

Abstract: 2SD1762 2SB1185 2SD1864 96214 2sb118 Transistor npn 2SB1184 2SB1243
Text: Transistors Power Transistor (50V, 3A) 2SD1760 / 2SD1864 / 2SD1762 FFeatures 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185 , -D57) 264 Transistors 2SD1760 / 2SD1864 / 2SD1762 FAbsolute maximum ratings (Ta = 25 , follows : 265 Transistors FElectrical characteristic curves 266 2SD1760 / 2SD1864 / 2SD1762 Transistors 2SD1760 / 2SD1864 / 2SD1762 267 ROHM


Original
PDF 2SD1760 2SD1864 2SD1762 2SB1184 2SB1243 2SB1185. 96-214-D57) 2SD1762 2SB1185 96214 2sb118 Transistor npn
SD 1083

Abstract: SD1087 2SD1084 2sd1033 2SD987 2sd1245 2SD1238 2SD1137 2SD1134 2SD1051
Text: 2SD1033 2SD1033 2SD992 2SD992 2SD1448 2SD1033 m 2SD1733 2SD1775 2SD1775 2SD1760 2SD1760 2SD1760 2SD1760 2 SD 1077 L / S 2SD 1078 2SD2121L/S 2SD2122L/S 2SD2122L/S 2SD2122L/S 2SD 1078 2SD


OCR Scan
PDF 2SD1055 2SD1246 2SD613 2SD525 2SC2562 2SD843 2SD1137 2SD1134 2SD743 2SD568 SD 1083 SD1087 2SD1084 2sd1033 2SD987 2sd1245 2SD1238 2SD1134 2SD1051
2009 - 2SB1184

Abstract: 2SB1243 2SD1760 2SD1864
Text: Power Transistor (50V, 3A) 2SD1760 / 2SD1864 Dimensions (Unit : mm) 0.9 0.65Max. 0.9 , 1.5±0.3 2SD1760 1.0 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2 , Collector power dissipation 3 2SD1760 2SD1864 A (DC) 4.5 IC Collector current A , reserved. 1/3 2009.12 - Rev.A 2SD1760 / 2SD1864 Data Sheet Packaging specifications and hFE Package Taping Code TL 2500 Basic ordering unit (pieces) Type hFE 2SD1760 2500


Original
PDF 2SD1760 2SD1864 65Max. 2SD1760 2SB1184 2SB1243. SC-63 R0039A 2SB1243 2SD1864
1999 - 2SD1760

Abstract: 2SD1864 2SB1184 2SB1243
Text: 2SD1760 / 2SD1864 Transistors Power Transistor (50V, 3A) 2SD1760 / 2SD1864 !External , 2.54 Symbol 2SD1760 2SD1864 (1) (1) (2) (3) Collector-base voltage Collector power , -0.1 0.5±0.1 4.4±0.2 C0.5 14.5±0.5 6.5±0.2 5.1 +0.2 -0.1 2.5 1.5±0.3 2SD1760 , 2SD1760 / 2SD1864 Transistors !Electrical characteristics (Ta = 25°C) Symbol Min. Typ. Max , Package Type hFE 2SD1760 TL 2500 Basic ordering unit (pieces) TV2 2500 PQR


Original
PDF 2SD1760 2SD1864 100ms 100mm2 2SD1760 2SD1864) 2SD1864 2SB1184 2SB1243
1998 - TRANSISTOR D400

Abstract: D400 npn transistor D400 transistor TRANSISTOR NPN D400 D400 npn transistor D302 2SB911 high hfe transistor 2sd2166 Transistor PNP VCEO 400V
Text: FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1760 , characteristics measurement circuit 239 Transistors Power Transistor (50V, 3A) 2SD1760 / 2SD1864 , (Units: mm) (96-214-D57) 264 Transistors FAbsolute maximum ratings (Ta = 25_C) 2SD1760 , values are classified as follows : 265 Transistors FElectrical characteristic curves 2SD1760 / 2SD1864 / 2SD1762 266 Transistors 2SD1760 / 2SD1864 / 2SD1762 267 Transistors Medium


Original
PDF 2SA1807 2SA1862 96-102-A331) 96-109-A343) 2SA1812 2SA1727 2SA1776 96-609-A313) 2SA1834 2SC5001 TRANSISTOR D400 D400 npn transistor D400 transistor TRANSISTOR NPN D400 D400 npn transistor D302 2SB911 high hfe transistor 2sd2166 Transistor PNP VCEO 400V
2001 - 2SB1184

Abstract: 2SB1243 2SD1760 2SD1864
Text: 2SD1760 / 2SD1864 Transistors Power Transistor (50V, 3A) 2SD1760 / 2SD1864 !External dimensions (Units : mm) 2SD1760 2SD1864 1.0±0.2 Limits (1) Base (2) Collector (3) Emitter , 2SD1760 (2) 2.54 2.54 Collector-base voltage Collector power dissipation (1) (1) (2) (3 , 2SD1760 / 2SD1864 Transistors !Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max , hFE 2SD1760 TL 2500 Basic ordering unit (pieces) TV2 2500 PQR 2SD1864 hFE


Original
PDF 2SD1760 2SD1864 2SD1760 SC-63 65Max. 2SB1184 2SB1243 2SD1864
TRANSISTOR d1760

Abstract: TRANSISTOR d1762 D1762 D1864 d1760 d1760 NPN Transistor 2SD1864 2SD1762 transistor 1002 ic 6802
Text: V Ic/Ib=2A/0.2A * C current transfer ratio 2sd1760.2sd1864 hFE 82 390 Vce=3V, lc=0.5A * 2SD1762 , Transistors Power Transistor (50V, 3A) 2SD1760 /2SD1864/2SD1762 •Features 1) LOW VcE(sat). , Epitaxial planar type NPN silicon transistor ^External dimensions (Units: mm) 2SD1760 6.5+0.2 cot-! do , -220FP EIAJ : SC-67 (1) Base (2) Collector (3) Emitter Transistors 2SD1760 /2SD1864/2SD1762 lAbsolute , (Pulse) *1 Collector power dissipation 2SD1760 15 W(Tc=25°C)*2 2SD1864 Pc 1 W 2SD1762 25 W(Tc


OCR Scan
PDF 2SD1760/2SD1864/2SD1762 2SB1184/2SB1243 /2SB1185. 2SD1760 2SD1864 65Max. SC-63 2SD1762 2sd1760 2sd1864 TRANSISTOR d1760 TRANSISTOR d1762 D1762 D1864 d1760 d1760 NPN Transistor 2SD1762 transistor 1002 ic 6802
Not Available

Abstract: No abstract text available
Text: h 7 > v ^ ^ / T ransistors 2 SD 17 6 0 2 SD 1 7 6 0 F5 2SD1760 / 2SD1760F5 NPN Freq. Power Amp. Epitaxial Planar NPN Silicon Transistors K:.V^T • W K T i £ 0 / ' D'mensions (U n it: mm , 2SD1760 / 2SD1760F5 POWER DISSIPATION: * S S iffl& ttflljii/E le c tric a l Characteristic Curves , 2SD1760 / 2SD1760F5 Vj ASO-DC/Jro h 7 > ' / 7 £ /Transistors DC CURRENT GAIN : hFE a , 8 2 — 180 1 2 0 -2 7 0 ( o: •): m aa& ) /C b ? R 1 8 0 -3 9 0 K 2SD1760


OCR Scan
PDF 2SD1760/2SD1760F5 2SB1184 2SB1184. 2SD1760 2SD1760/ 2SD1760F5
2SD1555

Abstract: 2SB1833 2SD1876 2SD1878 2SD772 nec 2SD1546 ZSD15 2SD1548 2SD772 toshiba 2sd1407
Text: 2SD1747A 2SD1445 2SD1846 2SD1847 2SD856 ZSD1266 2SD1275 2SD1748 2SD2018 2SC3444 2SD1760 2SD1760 2SD1933


OCR Scan
PDF 2SD1883 1899-Z 2SD1544 2SD1545 2SD1546 2SD1547 2SD1548 2SD2293 2SD2295 2SD2298 2SD1555 2SB1833 2SD1876 2SD1878 2SD772 nec ZSD15 2SD1548 2SD772 toshiba 2sd1407
2SD1762

Abstract: 230S d1760 D1864
Text: Transistors Power Transistor (50V, 3A) 2SD1760 /2SD1864/2SD1762 ·F e a tu re s 1 ) Low VcE(sat , ·A b s o lu te maximum ratings (Ta = 25°C) 2SD1760 /2SD1864/2SD1762 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current 2SD1760 2SD1864 2SD1762 Junction , specifications and hFE Package Code Type 2SD1760 2SD1864 2SD1762 hFE PQR PQR DEF Basic ordering unit (pieces , characteristic curves 2SD1760 /2SD1864/2SD1762 0 COLLECTOR TO EMITTER VOLTAGE : Vet (V) 10 20 30


OCR Scan
PDF 2SD1760/2SD1864/2SD1762 2SB1184/ 1243/2SB1185. 2SD1760 2SD1864 2SD1762 O-126 O-220, 0Dlb713 230S d1760 D1864
C1959

Abstract: nec 2405 NEC 2403 2sc4560 nec 2410 2SD2409 2sd2427 nec 2412 2SD1509 NEC 2415
Text: Z * M ITSUBISHI - A ROHM 2SC4744 2SD1586 2SD2468 2SD1972 2SD1972 2SC4008 2SD1760 2SD1760


OCR Scan
PDF 2SD2403 2SD2404 2SD2405 2SD2406 2SD2407 2SD2408 2SD2409 2SD2410 2SD2412 2SD2413 C1959 nec 2405 NEC 2403 2sc4560 nec 2410 2sd2427 nec 2412 2SD1509 NEC 2415
2006 - 2SB1184

Abstract: 2SD1760
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2Plastic-Encapsulate Transistors 2SD1760 TO-251 TO-252-2 TRANSISTOR (NPN) FEATURES Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) Complements the 2SB1184. 1. BASE 2. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter 3. EMITTER Value Units VCBO Collector-Base , 82-180 120-270 180-390 Typical Characteristics 2SD1760 Jiangsu Changjiang Electronics


Original
PDF O-251/TO-252-2Plastic-Encapsulate 2SD1760 O-251 O-252-2 2SB1184. 500mA 200mA 500mA 30MHz 2SB1184 2SD1760
Not Available

Abstract: No abstract text available
Text: TO-251/TO-252-2L Transistor 2SD1760 (NPN) TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) Complements the 2SB1184. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction , R 180-390 TO-251/TO-252-2L Transistor 2SD1760 (NPN) Typical Characteristics -


Original
PDF O-251/TO-252-2L 2SD1760 O-251 2SB1184. O-252-2L 500mA 200mA 30MHz
2006 - 2SB1184

Abstract: 2SD1760
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2Plastic-Encapsulate Transistors 2SD1760 TO-251 TO-252-2 TRANSISTOR (NPN) FEATURES Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) Complements the 2SB1184. 1. BASE 2. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter 3. EMITTER Value Units VCBO Collector-Base , 82-180 120-270 180-390 Typical Characteristics 2SD1760 Jiangsu Changjiang Electronics


Original
PDF O-251/TO-252-2Plastic-Encapsulate 2SD1760 O-251 O-252-2 2SB1184. 500mA 200mA 500mA 30MHz 2SB1184 2SD1760
2SDI80

Abstract: 2sc2238 2SD1431 2SC212Q 2SC3303 2SD1444 2SD1412 2SD1235 2SD1212 2SC3257
Text: 2SD1399 2SD1230 2SC1383 2SD1252 2SC2060 2SD1760 2SD1760 2SC2389 ?sn?UAS T T 2SC2784 OCTM


OCR Scan
PDF 2SD1442 2SD1235 2SD1212 2SD1212 2SD400 2SD553 2SD1444 2SD1445 2SD1445A 2SDI80 2sc2238 2SD1431 2SC212Q 2SC3303 2SD1444 2SD1412 2SC3257
Q2SD1760

Abstract: 2SD1760 1.6562 21142 7704 2SD1760 spice
Text: SPICE PARAMETER 2SD1760 by ROHM TR Div. * Q2SD1760 NPN BJT model * Date: 2006/11/16 .MODEL Q2SD1760 NPN + IS=1.2000E-12 + BF=91.918 + VAF=5.7704 + IKF=4.5333 + ISE=1.2000E-12 + NE=1.4873 + BR=344.81 + VAR=100 + IKR=81.827E-3 + ISC=1.4049E-9 + NC=1.6296 + RE=90.000E-3 + RB=.21142 + RC=33.065E-3 + CJE=562.04E-12 + MJE=.559 + CJC=145.17E-12 + MJC=.43988 + TF=1.6562E-9 + XTF=57.091 + VTF=180.89 + ITF=24.514 + TR=66.557E-9 + XTB=1.5000 -


Original
PDF 2SD1760 Q2SD1760 2000E-12 827E-3 4049E-9 000E-3 065E-3 04E-12 2SD1760 1.6562 21142 7704 2SD1760 spice
2SB1220

Abstract: 2sb1216 2SD1761 2SB1190A 2SB1189 2SB1208 2SB1186 2SB1184 2SD1812 2SB1204
Text: 14 »I ft 70 -5 -0.5 50* 2SD1760 (CPT) BCE 2SB1184 70 -5 -0.5 50* 2SD1760 SC


OCR Scan
PDF 2SB1184 2sb1184f5 2SBU85 2SB1186 2sb1186a 2sb1187 2SB1188 2SB1209 2SD1812 SC-51 2SB1220 2sb1216 2SD1761 2SB1190A 2SB1189 2SB1208 2SB1204
2SD1761

Abstract: 2S01761 2sd1764 2SD1749 2SD1748A 2SD1748 2SD1747A 2SD1747 2SD1746 2SD1760F5
Text: 40* 2SB1184 (CPT) BCE 2SD1760 90* 5 0.5 40* 2SB1184 SC-63 BCE 2SD1760F5 8* 5 0.5 90 , 10 1 24 1000 200000 3 0. 5 1.5 0.6 0.0012 2SD1760 n-A LF PA 60 50 3 1 15 1 40 82 390 3 0. 5 1 2 0. 2 2SD1760F5 n —A LF PA 60 50 3 1 15 1 40 82 390 3 0. 5 1 2 0.2 2SD1761 n —A LF PA 80 60 3 30


OCR Scan
PDF 2SD1746 2SD1747 2SD1747A 2SD1748 2SD1748A 2SD1749 2SD1749A 2SB1183 SC-63 2SD1759F5 2SD1761 2S01761 2sd1764 2SD1747 2SD1760F5
b1184

Abstract: No abstract text available
Text: S -7 > v 7, $ / T ransistors O Q D 4 1 0 4 i k ° ^ ^ r '> ^ U 7 V - ^ P N P '> '; = ! > h 2SB1184 · w D I w "# Epitaxial Planar PNP Silicon Transistors ·l&^jJSÍS^Jiiíiffl/Low Freq. Power Amp. · #fli''J'îil§il/Dim ensions (Unit : mm) · WÄ 1) VcE(sal) V c E (s a I)= -0 .5 V (T yp .) (Ic / I b = - 2 A / - 0 . 2 A ) 2) 2SD1760 · Features 1 ) Low VcE(sat). V c E (s a t)= -0 .5 V (T yp .) (IC /IB = - 2 A /- 0.2A) 2) Complementary pair with 2SD1760. · IftStifÂ^Sütè


OCR Scan
PDF 2SB1184 2SD1760 2SD1760. b1184
Supplyframe Tracking Pixel