The Datasheet Archive

2SD1755 datasheet (8)

Part ECAD Model Manufacturer Description Type PDF
2SD1755 2SD1755 ECAD Model Panasonic Silicon NPN epitaxial planar type Original PDF
2SD1755 2SD1755 ECAD Model Panasonic NPN Transistor Original PDF
2SD1755 2SD1755 ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
2SD1755 2SD1755 ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SD1755 2SD1755 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SD1755 2SD1755 ECAD Model Panasonic Silicon NPN Epitaxial Planar Type Power Transistors Scan PDF
2SD1755 2SD1755 ECAD Model ROHM TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Scan PDF
2SD1755P 2SD1755P ECAD Model Panasonic Silicon NPN Epitaxial Planar Type Power Transistor Original PDF

2SD1755 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1999 - 2SD1755

Abstract: No abstract text available
Text: Power Transistors 2SD1755 Silicon NPN epitaxial planar type Unit: mm 7.0±0.3 For power amplification with high forward current transfer ratio q q 0.8±0.2 7.2±0.3 s Features +0.3 High forward current transfer ratio hFE which has satisfactory linearity High emitter to base voltage , classification Rank hFE Q P 300 to 1200 800 to 2000 1 Power Transistors 2SD1755 PC - , 100 300 1000 Collector to emitter voltage VCE (V) Power Transistors 2SD1755 Rth(t) -


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PDF 2SD1755 2SD1755
2SD1755

Abstract: VUO60
Text: Power Transistors 2SD1755 2SD1755 Silicon NPN Epitaxial Planar Type High DC Current Gain (hFE), Power Amplifier ■Features • High DC current gain (Iife) • Good linearity of DC current gain (htE) • High emitter-base voltage (Vebo) • "I Type" package configuration with a cooling fin for direct soldering on PC board of a small-size electronic equipment ■Absolute Maximum Ratings , temperature Ta (°C) ^32652 OGlböST 2ÛÛ le —VcE 2SD1755 Tc = 25°C Â


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PDF 2SD1755 2SD1747/A) 2SD1755 VUO60
2003 - 2SD1755

Abstract: No abstract text available
Text: Power Transistors 2SD1755 Silicon NPN epitaxial planar type Unit: mm 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 0° to 0.15° 2.5±0.2 (1.0) 12.6±0.3 7.2±0.3 1.1±0.1 0.75±0.1 0.4±0.1 1.0±0.2 · High forward current transfer ratio hFE which has satisfactory linearity · High , : September 2003 SJD00227BED 1 2SD1755 PC Ta IC VCE 20 5 Collector current IC (A , ) IC 6 1 10 100 1 000 Collector-emitter voltage VCE (V) 2SD1755 Rth t


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PDF 2SD1755 10alues, 2SD1755
1999 - 2SD1755

Abstract: ic106 ic max 232
Text: Power Transistors 2SD1755 Silicon NPN epitaxial planar type Unit: mm 7.0±0.3 For power amplification with high forward current transfer ratio q q 0.8±0.2 7.2±0.3 s Features +0.3 High forward current transfer ratio hFE which has satisfactory linearity High emitter to base voltage , classification Rank hFE Q P 300 to 1200 800 to 2000 1 Power Transistors 2SD1755 PC - , 100 300 1000 Collector to emitter voltage VCE (V) Power Transistors 2SD1755 Rth(t) -


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PDF 2SD1755 2SD1755 ic106 ic max 232
2SD1755

Abstract: No abstract text available
Text: Power Transistors 2SD1755 2SD1755 Silicon NPN Epitaxial Planar Type High DC C urrent Gain Features · H ig h D C c u r r e n t g ain (Ii f e ) (Ii f e ) , Pow er A m plifier Package D im ensions Unit ! mn · G o o d lin e a r it y o f D C c u r r e n t g ain (h re ) · H ig h e m i t t e r - b a s e v o lta g e (V Ebo) · " I T y p e " p a c k a g e c o n fig u r a tio n w ith a c o o lin , * 3 O w 2SD1755 £ o


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PDF 2SD1755 2SD1747/A) 2SD1755
2003 - Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD1755 Silicon NPN epitaxial planar type Unit: mm 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ (1.0) 2.5±0.2 (1.0) 1.1±0.1 1.0±0.2 d pla inc Pl ea ne lud se pla m d m es vis , 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1755 PC  Ta IC ï , /EC). 2SD1755 103 Rth  t (1)Without heat sink (2)With a 50×50×2mm Al heat sink 102


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PDF 2002/95/EC) 2SD1755
2003 - 2SD1755

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD1755 Silicon NPN epitaxial planar type Unit: mm 7.0±0.3 M Di ain sc te on na tin nc ue e/ d 3.0±0.2 2.0±0.2 3.5±0.2 0° to 0.15° 1.0±0.2 0.75±0.1 0.4±0.1 Peak collector current Base , 2SD1755 PC Ta IC VCE 20 5 Collector current IC (A) 15 (1) 10 5 IB=10mA 9mA , 2002/95/EC). 2SD1755 Rth t Thermal resistance Rth (°C/W) 103 (1)Without heat sink (2


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PDF 2002/95/EC) 2SD1755 2SD1755
2003 - 2SD1755

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD1755 Silicon NPN epitaxial planar type Unit: mm For power amplification with high forward current transfer ratio Features · High forward current transfer ratio hFE which has satisfactory linearity · High , 2SD1755 PC Ta 20 6 (1)TC=Ta (2)Without heat sink (PC=1.3W) TC=25°C IC VCE Collector-emitter , /EC). 2SD1755 Rth t 103 (1)Without heat sink (2)With a 50×50×2mm Al heat sink Thermal


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PDF 2002/95/EC) 2SD1755 2SD1755
2003 - 2SD1755

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD1755 Silicon NPN epitaxial planar type Unit: mm For power amplification with high forward current transfer ratio Features · High forward current transfer ratio hFE which has satisfactory linearity · High , 2SD1755 PC Ta 20 6 (1)TC=Ta (2)Without heat sink (PC=1.3W) TC=25°C IC VCE Collector-emitter , /EC). 2SD1755 Rth t 103 (1)Without heat sink (2)With a 50×50×2mm Al heat sink Thermal


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PDF 2002/95/EC) 2SD1755 2SD1755
2SD1761

Abstract: 2S01761 2sd1764 2SD1749 2SD1748A 2SD1748 2SD1747A 2SD1747 2SD1746 2SD1760F5
Text: 2SD1754A fôT HG PA 100 80 3 1.3 15 100 100 500 2500 4 0. 5 1 2 0.05 2SD1755 tur HO PA 100 60 6 1. 3 15 , 2SD1754 30* 12 0.2 (1 Type) BCE 2SD1754A 30* 12 0.5 0.3* 0. 6* 1. 5* (1 Type) BCE 2SD1755


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PDF 2SD1746 2SD1747 2SD1747A 2SD1748 2SD1748A 2SD1749 2SD1749A 2SB1183 SC-63 2SD1759F5 2SD1761 2S01761 2sd1764 2SD1747 2SD1760F5
Not Available

Abstract: No abstract text available
Text: 2SD1755 Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A)6 Absolute Max. Power Diss. (W)1.3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)0.5 @I(C) (A) (Test Condition)100m @I(B) (A) (Test Condition)5 h(FE) Min. Current gain.300 h(FE) Max. Current gain.2.5k @I(C) (A) (Test Condition)1 @V(CE) (V) (Test Condition)4 f(T) Min. (Hz) Transition Freq50MÂ @I(C) (A) (Test Condition)500m


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PDF 2SD1755 Freq50MÃ
2SD2502

Abstract: 2sd2520 2sD2503 2SD2375 zener 3,5 2SD1755 2SD2158 T0-220F 2SD1719 2SD2157
Text: Transistors (Selection Guide by Applications and Functions) ■Silicon Power Transistors (continued) Application Functions Vceo (V) lc (A) VcE(sat) typ. (V) Package (No.) le (A) le (mA) T0-220(a) (D56) T0-220F(D59) T0-220E(D63) T0220D(D62) N Type (D47) I Type (D48) NPN PNP NPN PNP NPN PNP NPN PNP NPN PNP NPN High hre 60 6 <1 5 100 2SD1474 2SD1719 2SD1755 60/80 2 <1 1 25 2SD1776/A 2SD1775/A 60 2 <1 1 25 2SD2158 60/80 3 <1 2 50 2SB1299


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PDF T0-220 T0-220F T0-220E T0220D 2SD1474 2SD1719 2SD1755 2SD1776/A 2SD1775/A 2SD2158 2SD2502 2sd2520 2sD2503 2SD2375 zener 3,5 2SD1755 2SD2158 2SD1719 2SD2157
2SC5072

Abstract: 4670K 2SC4703 4685 4686 2SC4698 2SC470-3 2SC4389 2SC4181 2SC4176
Text: 2SC4389 2SC 4683 Ä S 2SC4480 2SC 4684 x m 2SD1755 2SC 4685 s s 2SD1474


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PDF 2SC4181 2SD1823 2SD2351 2SC4443 2SC4176 2SD1977 2SC4700 2SC4523 2SD1412 2SD1747 2SC5072 4670K 2SC4703 4685 4686 2SC4698 2SC470-3 2SC4389 2SC4181 2SC4176
2SD1555

Abstract: 2SB1833 2SD1876 2SD1878 2SD772 nec 2SD1546 ZSD15 2SD1548 2SD772 toshiba 2sd1407
Text: 2SD772 2SD1499 2SD874A 2SD1252 2SD1252 2SD1276 2SD1277 2SD1742 2SD1752A 2SD1746 2SD1747 2SD1746 2SD1755


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PDF 2SD1883 1899-Z 2SD1544 2SD1545 2SD1546 2SD1547 2SD1548 2SD2293 2SD2295 2SD2298 2SD1555 2SB1833 2SD1876 2SD1878 2SD772 nec ZSD15 2SD1548 2SD772 toshiba 2sd1407
2SD2334

Abstract: 2SD2076 2sc4814 2sd2190 2216y 2SD1930 2SD1546 2SD1755 2SD1472 2sc3677
Text: 2SC2925 2SD1273 2SD1754 2SD1474 2SD1755 - A - A O -A - A - A 0 £ 2 S D 213 j 2SD 2197 2SD 2198


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PDF 2SD2174 2SD2175 2SD2176 2SD2177 2SD2185 2SD2186 2SD2187 2SD2188 2SD2189 2SD2190 2SD2334 2SD2076 2sc4814 2216y 2SD1930 2SD1546 2SD1755 2SD1472 2sc3677
2sd2520

Abstract: 2SD2501 2SD2502 2sD2503 2SD1327 2SD1755
Text: Transistors (Selection Guide by Applications and Functions) Silicon Power Transistors (continued) Applica tion Func tions V ceo (V) lc VcE(sat) typ. (V) lc Package (No.) (A) 5 1 1 2 2 3 4 0.5 1.2 2 1.2 3 3 2 3 3 4 4 1.5 (A) (mA) 100 25 25 50 50 75 100 20 30 50 30 75 1 2 8 12 12 8 8 50 3 5 12.5 8 60 70 Ib TO-220(a) (D52) T0-220F(D55) PNP : T0-220E(D59) PNP : T0-220D(D58) PN P : NPN N Type (D42) PNP : NPN j 2SD1719 ; 2SD1775/A i Type (D44) PN P NPN : 2SD1755 NPN


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PDF O-220 T0-220F T0-220E T0-220D 2SD1719 2SD1775/A 2SD1755 2SB1195 2SD1634 2SD1336/A 2sd2520 2SD2501 2SD2502 2sD2503 2SD1327 2SD1755
B1548

Abstract: 2SB1299A
Text: 2SD1719 2SD1775/A 2SD1747/A 2SD1755 High hn-: 60 60/80 60 150 60 60/80 60/80 60 60 60/80 2 2


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PDF T0-220 O-220F 2SB954/A 2SB1052 2SD1480 2SD1265/A O-220E T0220D 2SB1169/A 2SB1170 B1548 2SB1299A
Not Available

Abstract: No abstract text available
Text: 2SD1755 2SD1259/A 2SD1754/A 2SD1258 2SD1753 2SD2156 2SD1272 35 ± 5 High 35 ± 5


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PDF T0-220 2SD1474 2SD1776/A 2SD2158 2SD1775/A 2SD1719 2SD1336/A 2SB1108 2SB1193 2SD1608
D1274A

Abstract: B1317 C4714 D1707 b1108 c2258 transistor 2sD2504 transistor D2052 transistor transistor b1154 D1244
Text: 2SD1746 2SB1177 2SD1747 ¡ 2SB1180A® 1 2SD1750A® f I 2SD 2209® 1 » 2SD1755 2SB1638 í2 S B ii8 0 ® 1


OCR Scan
PDF 2SC4627 2SC5021 -2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 2SD2345 D1274A B1317 C4714 D1707 b1108 c2258 transistor 2sD2504 transistor D2052 transistor transistor b1154 D1244
D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE 2SC3939 C3795 2SB1526
Text: 2SD1745 i 2SB1176 V2SD1746 ; 2SB1177 > . 2SD1747 . 2SB1180A® 2SD1750A© 2S D 2209© 1 1 2SD1755


OCR Scan
PDF 125mW 2SC4627 2SC5021 2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 D2375 D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE 2SC3939 C3795 2SB1526
D1276A

Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Text: ) Built-in Zener Diode I 2SB1176 I 2SD1746 2SD1755 i 2SB1177 ! 2SD1747 2SB1180® I 2SD1750© f 2SD1747A


OCR Scan
PDF 2SC4609 2SC4808 2SA1806 2SC4627 2SA1790 2SC4626 2SC4655 2SD2345 2SC46 12SA1 D1276A B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2SD602A Mini 3P H9 2SD1755 I H26 2SC3940 TO92NL H23 2SD0814A 2SD814A Mini


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PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
AN3962FB

Abstract: MN1880023 mn19412 IC AN7135 MN1874033 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: 1750/A © 2SD1751 2SD1752/A 2SD1753 2SD1754/A 2SD1755 2SD1771/A 2SD 1772/A 2S D 1773© 2S01 775/A 2SD


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PDF MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 IC AN7135 MN1874033 an3814k MN1883214 an8294nsb mn4117405 mn171202
2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: No file text available


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PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
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