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2SD1746 datasheet (9)

Part ECAD Model Manufacturer Description Type PDF
2SD1746 2SD1746 ECAD Model Panasonic NPN Transistor Original PDF
2SD1746 2SD1746 ECAD Model Panasonic Silicon NPN epitaxial planar type Original PDF
2SD1746 2SD1746 ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
2SD1746 2SD1746 ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SD1746 2SD1746 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SD1746 2SD1746 ECAD Model Panasonic Silicon Medium Power Transistors Scan PDF
2SD1746 2SD1746 ECAD Model Panasonic Silicon NPN Epitaxial Planar Type Power Transistors Scan PDF
2SD1746P 2SD1746P ECAD Model Panasonic Silicon NPN Epitaxial Planar Type Power Transistor Original PDF
2SD1746Q 2SD1746Q ECAD Model Panasonic Silicon NPN Epitaxial Planar Type Power Transistor Original PDF

2SD1746 Datasheets Context Search

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LT32B

Abstract: 2SB1176 2SD1746
Text: Power Transistors 2SD1746 2SD1746 Silicon N P N Epitaxial Planar Type Power Switching C om plem entary Pair with 2 S B 1 1 7 6 Features · Low collector-em itter saturation voltage (V ce< & jo) Package Dim ensions Unit ! mm · High DC current gain (hFE) and good linearity · High collector current (Ic) · "I T ype" package configuration with a cooling fin for direct soldering on PC board of a sm , Material Copyrighted By Its Respective Manufacturer Power Transistors Pc - T a 2SD1746 IC~ V ce


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PDF 2SD1746 10MHz T32B5E 2SD1747/A) lbfl40 LT32B 2SB1176 2SD1746
1999 - 2SB1176

Abstract: 2SD1746
Text: Power Transistors 2SD1746 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1176 7.0±0.3 q q s Absolute Maximum Ratings Parameter +0.3 1.0±0.2 1.1±0.1 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current , P hFE2 90 to 180 130 to 260 1 Power Transistors 2SD1746 IC - VCE 5 , 300 1000 Collector to emitter voltage VCE (V) Power Transistors 2SD1746 Rth(t) - t


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PDF 2SD1746 2SB1176 2SB1176 2SD1746
2SD1555

Abstract: 2SB1833 2SD1876 2SD1878 2SD772 nec 2SD1546 ZSD15 2SD1548 2SD772 toshiba 2sd1407
Text: 2SD772 2SD1499 2SD874A 2SD1252 2SD1252 2SD1276 2SD1277 2SD1742 2SD1752A 2SD1746 2SD1747 2SD1746 2SD1755


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PDF 2SD1883 1899-Z 2SD1544 2SD1545 2SD1546 2SD1547 2SD1548 2SD2293 2SD2295 2SD2298 2SD1555 2SB1833 2SD1876 2SD1878 2SD772 nec ZSD15 2SD1548 2SD772 toshiba 2sd1407
1999 - OF IC 723

Abstract: 2SB1176 2SD1746
Text: Power Transistors 2SD1746 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1176 7.0±0.3 q q s Absolute Maximum Ratings Parameter +0.3 1.0±0.2 1.1±0.1 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current , P hFE2 90 to 180 130 to 260 1 Power Transistors 2SD1746 IC - VCE 5 , 300 1000 Collector to emitter voltage VCE (V) Power Transistors 2SD1746 Rth(t) - t


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PDF 2SD1746 2SB1176 OF IC 723 2SB1176 2SD1746
2003 - 2SB1176

Abstract: 2SD1746
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD1746 Silicon NPN epitaxial planar type Unit: mm 0° to 0.15° 2.5±0.2 (1.0) 1.1±0.1 0.75±0.1 0.4±0.1 1.0±0.2 · Low collector-emitter saturation voltage VCE(sat) · Satisfactory liniarity of , 2003 SJD00218BED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1746 , 2002/95/EC). 2SD1746 Rth t Thermal resistance Rth (°C/W) 103 (1)Without heat sink (2


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PDF 2002/95/EC) 2SD1746 2SB1176 2SD1746
2003 - ic 4604

Abstract: 2SB1176 2SD1746 CW-10-3
Text: Power Transistors 2SD1746 Silicon NPN epitaxial planar type Unit: mm 7.0±0.3 0° to 0.15° 2.5±0.2 (1.0) 1.1±0.1 0.75±0.1 0.4±0.1 1.0±0.2 · Low collector-emitter saturation voltage VCE(sat) · Satisfactory liniarity of forward current transfer ratio hFE · Large collector current IC · , 2SD1746 PC Ta IC VCE 20 Collector-emitter saturation voltage VCE(sat) (V) TC=25°C (1 , 1 10 100 1 000 Collector-emitter voltage VCE (V) 2SD1746 Rth t Thermal


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PDF 2SD1746 2SB1176 ic 4604 2SB1176 2SD1746 CW-10-3
2003 - Not Available

Abstract: No abstract text available
Text: Power Transistors 2SD1746 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1176 Features 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 0° to 0.15° 2.5±0.2 M Di ain sc te on na tin nc ue e/ d · Low collector-emitter saturation voltage VCE(sat) · Satisfactory liniarity , date: September 2003 1 2SD1746 PC Ta 20 6 (1)TC=Ta (2)Without heat sink (PC=1.3W) TC , on te /e st -in in de for x. ma ht t m ion l . 104 M Di ain sc te on na tin nc ue e/ d 2SD1746


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PDF 2SD1746 2SB1176
2SD1761

Abstract: 2S01761 2sd1764 2SD1749 2SD1748A 2SD1748 2SD1747A 2SD1747 2SD1746 2SD1760F5
Text: - 264 - M s i+ g (Ta=25'C, *EPIáTc=25'C) î S fi R It (13=25-0 [»Epiityp« Ve BO (V) VcEO (V) ICCDC) (A) Pc (W) Peí (W) (max) (VA) VCB (V) ilDÌJl) (max) VcE (V) ic/il (A) (max} (V) (V) ic (A) ¡B (A) 2SD1746 fôT PS* 130 80 5 1.3 15 10 100 60 260 2 2 0.5 1. 5 2 0. 2 2SD1747 Í2T PS» 130 80 7 1.3 15 10 100 60 260 2 3 0.5 1. 5 5 0. 25 , 2SD1746 30» 10 0.5 0. 5* 0.1* 1.5* 2SB1177 (I Type) BCE 2SD1747 30* 10 0.5 0. 5* 0.1* 1.5


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PDF 2SD1746 2SD1747 2SD1747A 2SD1748 2SD1748A 2SD1749 2SD1749A 2SB1183 SC-63 2SD1759F5 2SD1761 2S01761 2sd1764 2SD1747 2SD1760F5
4892

Abstract: 2SC4470 2sc3904 2SC3356 2sc3828 2SC3609 2SC4901 2SD1763A 2SC4928 2SD2330
Text: 2SC3896 2SC4111 2SC 4880 B it 2SC3995 2SC 4881 S S 2SD1667 2SC4549 2SD1746 2SC4596 2SC


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PDF 2SC4394 2SC4226 2SC49Ã 2SC3937 2SC4470 2SC3356 2SC4904 2SC3704 2SC3609 2SC4093 4892 2sc3904 2sc3828 2SC4901 2SD1763A 2SC4928 2SD2330
2SD1555

Abstract: nec 2035 2SD880 2035 2SC3346 HITACHI 2055 2SC4817 2SD2404 2SD2023 2SC2631A
Text: 2SD1682 2SC3422 2SD1744 2SD 2038 y □ —A 2SD1722 2SC4815 2SD1746 2SD 2039 □ —A 2SD1914


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PDF 2SD1394 2SD1481 2SD1217 2SD2027 2SD880 2SD1567 2SD856 2SD1248 2SD1634 2SD1928 2SD1555 nec 2035 2035 2SC3346 HITACHI 2055 2SC4817 2SD2404 2SD2023 2SC2631A
4712 4723

Abstract: 2SC4933 2SC4566 2SC4717 4735 2SC2242 2SC2688 2SC2705 2Sc3468 2SC3451
Text: 2SC 4729 4 2SD2178 2SC 4730 # 2SD2183 2SC 4731 H ¥ 2SD1746 2SC 4732 y #


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PDF 2SC3956 2SC3963 2SC2688 2SD2134 2SC3617 2SC3451 2SD1314 2SC4485 2SD789 2SD2074 4712 4723 2SC4933 2SC4566 2SC4717 4735 2SC2242 2SC2688 2SC2705 2Sc3468
nec 2sc3157

Abstract: nec 1678 2sd2239 2SD2061 2SD999 2sc3694 2SD1406 2SD1317 2SD1296 2SC3760
Text: SL 2SC1568 2SC2497 2SD1265 2SD1264 2SC2594 2SD1633 2SD1276 2SD1773 2SD1336A 2SD1608 2SD1746


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PDF 2SD1660 2SD1198A 2SD1198A 2SD1622 2SD1631 2SC2883 2SD1406 2SC3299 2SD1412 2SD1296 nec 2sc3157 nec 1678 2sd2239 2SD2061 2SD999 2sc3694 2SD1317 2SC3760
Not Available

Abstract: No abstract text available
Text: Power T ransistors 2S D 17 4 6 2SD1746 Silicon N P N Epitaxial P lanar Type Pow er Switching C om plem entary Pair with 2 S B 1 1 7 6 Features · Low collector-em itter saturation voltage (V ce< mo) · High DC c u rre n t gain (hpE) and good linearity · High collector c u rre n t (Ic) · "I T y p e" package configuration with a cooling fin for direct soldering on PC board of a sm all-size electronic equipm ent 0 .9 ± 0 .1 - Package Dim ensions U n it ! mm 7.3m ax. 3.2m ax. 3.7max. 0.9


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PDF 2SD1746 bT32fi5E 2sdi74ó
2SB1176

Abstract: 2SD1746
Text: Power Transistors 2SB1176 2SB1176 Silicon PNP Epitaxial Planar Type Power Switching Complementary Pair with 2SD1746 ■Features • Low collector-emitter saturation voltage (Vcecs.u) • Good linearity of DC current gain (1)fe) • High collector current (Ic) • "I Type" package configuration with a cooling fin for. direct soldering on PC board of & small-size electronic equipfnent Absolute Maximum Ratings (Tc=25°C) Item Symbol Value Unit Collector-base voltage VcBO -130 V


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PDF 2SB1176 2SD1746 2SB1180/A) bT32flS2 2SB1176 2SD1746
2SC4714

Abstract: 2SA1817 2sd22 2SC4717 2SC3945 2SC3942 2SC3063 2SC2923 2SC2258 2SA1605
Text: 2SD1746 80 15 0.5 7 350 2SD1964 80/100 7 0.25 5 250 2SB946 — 2sd1271/a 2SB1607 2SD2469


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PDF O-126 D52SK, O-202 T0-220 O-220F 2SA1605 2SC2258 2SC3063 2SC2923 2SC4714 2SA1817 2sd22 2SC4717 2SC3945 2SC3942 2SC3063 2SC2258 2SA1605
B1548

Abstract: 2SB1299A
Text: 2SD1746 2SB1174 2SD1744 2SB 1148/A 2SD1752/A 0.32 Low VcK(sal) 80 80 80 80 80/100 60 60/80 3 0.3


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PDF T0-220 O-220F 2SB954/A 2SB1052 2SD1480 2SD1265/A O-220E T0220D 2SB1169/A 2SB1170 B1548 2SB1299A
2SD1539

Abstract: d53 pnp transistor 2SC4714 2SC3063 2SC2923 2SC2258 2SB946 2SB1173 2sb1071 2SA1605
Text: 2SB1606 i 2SD2468 2SB933 i 2SD1256 2SB1176 i 2SD1746 80 15 0.5 7 350 i 2SD1964 80/100 7 0.25 5


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PDF O-126 O-202 T0-220 O-220F 2SA1605 2SC2258 2SC3063 2SC2923 2SC4714 2SC3942 2SD1539 d53 pnp transistor 2SC3063 2SC2258 2SB946 2SB1173 2sb1071 2SA1605
d1266a

Abstract: D1271A D1985A D2374 SB945 d1266 d1264a 1071AI B1604 2SD1273 P
Text: 2SB1175 2SB1176 2SD1745 2SD1746 5 15 7 2S D1270 ¡ 2S D1964 5 2SB 946 ! 2 S D 1271/A 2S


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PDF 2SC2258 2SC3063 2SC2923 2SC4714 2SC3942 2SA1817 2SC4717 2SA1375 2SC2924 2SC5121 d1266a D1271A D1985A D2374 SB945 d1266 d1264a 1071AI B1604 2SD1273 P
2003 - 2SB1176

Abstract: 2SD1746
Text: Power Transistors 2SB1176 Silicon PNP epitaxial planar type For voltage switching Complementary to 2SD1746 Unit: mm 3.0±0.2 2.0±0.2 3.5±0.2 0° to 0.15° 2.5±0.2 (1.0) 12.6±0.3 7.2±0.3 1.1±0.1 0.75±0.1 0.4±0.1 1.0±0.2 · Low collector-emitter saturation voltage VCE(sat) · Satisfactory linearity of forward current transfer ratio hFE · Large collector current IC · I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of


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PDF 2SB1176 2SD1746 2SB1176 2SD1746
2003 - Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SB1176 Silicon PNP epitaxial planar type For voltage switching Complementary to 2SD1746 Features · Low collector-emitter saturation voltage VCE(sat) · Satisfactory linearity of forward current transfer ratio hFE · Large collector current IC · I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment 12.6±0.3 7.2±0.3 (1.0) (1.0) Unit: mm 7.0±0.3 3.0±0.2


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PDF 2002/95/EC) 2SB1176 2SD1746
2003 - Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SB1176 Silicon PNP epitaxial planar type For voltage switching Complementary to 2SD1746 Features · Low collector-emitter saturation voltage VCE(sat) · Satisfactory linearity of forward current transfer ratio hFE · Large collector current IC · I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment 12.6±0.3 7.2±0.3 (1.0) (1.0) Unit: mm 7.0±0.3 3.0±0.2


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PDF 2002/95/EC) 2SB1176 2SD1746
SB-116

Abstract: 2sb1163 2SB1181F5 2SB1162 2SB1161 2SB1160 2SB1159 2SB1158 2SB1157 2sb1742
Text: -0.5 0.15* 0.15* 0.8* 2SD1745 (I Type) BCE 2SB1175 30* -10 -0.5 0.13* 0.13* 0. 5* 2SD1746 (1


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PDF 2SB1157 2SB1158 2SB1159 2SB1160 2SB1161 2SB1162 2SB1163 2SB1176 2SD1747 2SB1177 SB-116 2sb1163 2SB1181F5 2SB1162 2SB1161 2SB1160 2SB1159 2SB1158 2SB1157 2sb1742
2SB0774

Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Text: 0.3 0.5 0.25 2SB1175 2SB1176 2SD1745 2SD1746 80 80 80/100 1 7 5 7 2SD2469 2SB934


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PDF O-126 2SC2258 2SC3063 2SC5340 O-202 T0-220 O-220F 2SC2923 2SC4714 2SC3942 2SB0774 2SA2004 2SB160 2SB642
2003 - 2SB1176

Abstract: 2SD1746
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SB1176 Silicon PNP epitaxial planar type For voltage switching Complementary to 2SD1746 Unit: mm Parameter Emitter-base voltage (Collector open) Rating Unit VCBO -130 VCEO -80 V VEBO -7 V IC Peak collector current Collector power dissipation -5 A 15 3 1: Base 2: Collector 3: Emitter I-G1 Package W Tj Storage temperature 2 Note


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PDF 2002/95/EC) 2SB1176 2SD1746 2SB1176 2SD1746
Not Available

Abstract: No abstract text available
Text: 2SB1175 2SD1746 2SB1176 2SD1747 2SB1177 o 2 S D 1 7 4 5 (Y ) 2 S B 1 1 7 6 (Y ) 2 S D 1 746 (Y ) 2 S


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