The Datasheet Archive

2SD1707 datasheet (7)

Part ECAD Model Manufacturer Description Type PDF
2SD1707 2SD1707 ECAD Model Panasonic NPN Transistor Original PDF
2SD1707 2SD1707 ECAD Model Panasonic Silicon NPN epitaxial planar type Original PDF
2SD1707 2SD1707 ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
2SD1707 2SD1707 ECAD Model Panasonic Silicon NPN Epitaxial Planar Type Power Transistors Scan PDF
2SD17070P 2SD17070P ECAD Model Panasonic TRANS NPN 80VCEO 20A TOP-3F Original PDF
2SD1707P 2SD1707P ECAD Model Panasonic Silicon NPN Epitaxial Planar Type Power Transistor Original PDF
2SD1707Q 2SD1707Q ECAD Model Panasonic Silicon NPN Epitaxial Planar Type Power Transistor Original PDF

2SD1707 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - 2SB1156

Abstract: 2SD1707
Text: Power Transistors 2SD1707 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1156 5.0±0.2 Features (3.2) 11.0±0.2 3.2±0.1 15.0±0.2 2.0±0.2 1.1±0.1 2.0±0.1 0.6±0.2 5.45±0.3 Symbol Rating Collector-base voltage (Emitter open , 260 Publication date: September 2003 SJD00211BED 1 2SD1707 PC Ta IC VCE , 0.1 1 10 100 1 000 Collector-emitter voltage VCE (V) 2SD1707 Rth t 104 103


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PDF 2SD1707 2SB1156 2SB1156 2SD1707
ic 301

Abstract: 2SD1707 2SB1156
Text: Power Transistors 2SD1707 2SD1707 Silicon NPN Epitaxial Planar Type Power Switching Complementary Pair with 2SB1156 ■Features • Low collector-emitter saturation voltage (VcEfsao) • Good linearity of DC current gain (Iife) • High collector current (Ic) • "Full Pack" package for simplified , Copyrighted By Its Respective Manufacturer Power Transistors 2SD1707 Ta Ic — Vce ( 1 ) Tc=Ta ( 2 , Copyrighted By Its Respective Manufacturer Power Transistors 2SD1707 This Material Copyrighted By Its


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PDF 2SD1707 2SB1156 -55-T150 10Ubi= VCC-50V ic 301 2SD1707 2SB1156
2000 - 2SD1707

Abstract: No abstract text available
Text: Power Transistors 2SD1707 Silicon NPN epitaxial planar type Unit: mm (0.7) For power switching Complementary to 2SB1156 21.0±0.5 15.0±0.3 11.0±0.2 5.0±0.2 (3.2) 16.2±0.5 (3.5) Solder Dip · Low collector to emitter saturation voltage VCE(sat) · Satisfactory linearity of forward , common rank (PQ rank hFE2 = 90 to 260) in the rank classification. 1 2SD1707 PC T a 120 20 (1 , ) and with a 100×100×2mm Al heat sink 2SD1707 Thermal resistance Rth(t) (°C/W) 1000 100 (1


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PDF 2SD1707 2SB1156 2SD1707
2SB1156

Abstract: 2SD1707
Text: Power Transistors 2SD1707 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1156 5.0±0.2 I Absolute Maximum Ratings TC = 25°C 3.2±0.1 15.0±0.2 · Low collector to emitter saturation voltage VCE(sat) · Satisfactory linearity of forward current transfer ratio , classification. 320 Power Transistors 2SD1707 IC VCE (1) 100 TC=25°C (1)TC=Ta (2)With a , ) 321 2SD1707 Power Transistors Rth(t) t Thermal resistance Rth(t) (°C/W) 10000 Note


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PDF 2SD1707 2SB1156 2SB1156 2SD1707
2SC3998

Abstract: 2sc4640 4793 2sd637 2SC1815 2SD1546 C4463 2sc2555 4802 2SC4804
Text: 2SC4871 2SC4321 2SC4228 2SC4805 2SC 4785 2SC4425 2SD1707 2SC 4786 - 2SC3447 2SC3310


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PDF 2SC4406 2SC4244 2SC4463 2SC3932 2SC4407 2SC4250 2SC4670 2SC1815 2SD637 2SC3998 2sc4640 4793 2sd637 2SC1815 2SD1546 C4463 2sc2555 4802 2SC4804
2SD2334

Abstract: 2SD2333 2SD1298 2SD1431 2s02333 2sc3211 2SC3054 2SD2335 2SD2262 2SD1706
Text: # 2SD1817 2SD2138 2SD 2285 H m ZSD1213 2SD1707 2SD 2286 a iL 2SD1153 2SD 2287


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PDF 2SC4480 2SC3666 2SD2192 2SC4644 2SC4620 2SC3673 2SD2177 2SD1328 2SC4482 2SD2334 2SD2333 2SD1298 2SD1431 2s02333 2sc3211 2SC3054 2SD2335 2SD2262 2SD1706
Not Available

Abstract: No abstract text available
Text: Power Transistors 2SD1707 2SD1707 Silicon NPN Epitaxial Planar Type Power Switching Complementary Pair with 2SB1156 Features · Low c o lle c to r -e m itte r satu ratio n v o lta g e (VcE) · Good lin ea rity of DC c u rre n t gain · High c o lle c to r c u rre n t ( I c ) · "Fu ll P a c k " p ackage fo r sim plified m ounting on a h e a t sink with one sc re w 03.2 ± 0.1 ^2.2max. (Iif , ) 5 T >4 M 2s d i 707 Power Transistors R th (t) - t 2SD1707 T ra n sie n t 10 -4


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PDF 2SD1707 2SB1156 bT32fl52
2003 - 2SB1156

Abstract: 2SD1707
Text: Power Transistors 2SD1707 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1156 5.0±0.2 Absolute Maximum Ratings TC = 25°C (3.2) 11.0±0.2 15.0±0.2 3.2±0.1 (3.5) Solder Dip · Low collector-emitter saturation voltage VCE(sat) · Satisfactory , 2003 SJD00211BED 1 2SD1707 PC Ta IC VCE IB=200mA 16 80 60 40 140mA , current IC (A) 0 10 1 10 100 1 000 Collector-emitter voltage VCE (V) 2SD1707 Rth


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PDF 2SD1707 2SB1156 2SB1156 2SD1707
2000 - 2sd1707

Abstract: 2SB1156
Text: Power Transistors 2SD1707 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1156 5.0±0.2 I Absolute Maximum Ratings TC = 25°C 3.2±0.1 15.0±0.2 · Low collector to emitter saturation voltage VCE(sat) · Satisfactory linearity of forward current transfer ratio , classification. 1 2SD1707 Power Transistors IC VCE (1) 100 TC=25°C (1)TC=Ta (2)With a , emitter voltage VCE (V) Power Transistors 2SD1707 Rth(t) t Thermal resistance Rth(t) (°C/W


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PDF 2SD1707 2SB1156 2sd1707 2SB1156
2003 - 2SB1156

Abstract: 2SD1707
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD1707 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1156 5.0±0.2 (0.7) 15.0±0.3 (3.2) Emitter-base voltage (Collector open) Collector current Peak , 2002/95/EC). 2SD1707 PC Ta IC VCE IB=200mA 16 80 60 40 140mA 120mA 12 , complies with the RoHS Directive (EU 2002/95/EC). 2SD1707 Rth t 104 Thermal resistance Rth (°C/W


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PDF 2002/95/EC) 2SD1707 2SB1156 SC-92 2SB1156 2SD1707
2SD1671

Abstract: 2SD1669 2SD1668 2SD1667 2SD1666 2SD1665M 2SD1665AM 2SD1664 2SD1663 2SD1662
Text: 3 80 10 100 60 260 2 3 1.5 2. 5 15 1. 5 2SD1707 KT PSW 130 80 20 3 100 10 100 60 260 2 3 1. 5 2. 5 , » 2SB1156 (T0P-3F(a) BCE 2SD1707 20» 5 0. 5 70» 2SB1157 (TOP—3F (a) ) BCE 2SD1712


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PDF 2SD1662 2SD1663 2SD1664 2SD1665AM 2SD1665M 2SD1666 2SD1667 2SD1692 2SB1150 O-126) 2SD1671 2SD1669 2SD1668 2SD1667 2SD1666
Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD1707 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1156 5.0±0.2 (0.7) 15.0±0.3 (3.5) Solder Dip 21.0±0.5 φ 3.2±0.1 2.0±0.2 2.0±0.1 â , complies with the RoHS Directive (EU 2002/95/EC). 2SD1707 PC  Ta IC  VCE Collector-emitter , 2002/95/EC). 2SD1707 104 Rth  t Note: Rth was measured at Ta=25˚C and under natural


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PDF 2002/95/EC) 2SD1707 2SB1156
te 1819

Abstract: 2SD1878 2sd1856 2SC4211 2SD1649 2SC4331 2SD1929 2SD1834 2sd1707 2SC4723
Text: 2SD1707 2SD1645 2SD1933 2SD1856 2SD1929 2SD1876 2SD1649 2SD1876 2SD1878 2SD1879 2SD2251


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PDF 2SD1813 2SD1814 2SD1667 2SD1406 2SD2107 2SD2105 2SD1267 2SD1445A 2SD1250 2SC4331 te 1819 2SD1878 2sd1856 2SC4211 2SD1649 2SD1929 2SD1834 2sd1707 2SC4723
2SD1570

Abstract: 2SD412 2SD411 2SD1488 2sd1033 2sd1193 2SC3293 2SD1647 2SD1706 2sd1707
Text: - 234 - s s Type No. tt S Manuf. z m SANYO X S TOSHIBA 5 NEC S iL HITACHI m ± a FUJITSU te T MATSUSHITA z m MITSUBISHI □ - A ROHM 2SD 1212 -— Z & 2SD1443 2SD 1213 , Z & 2SD1707 2SD 1214 ^ fö T 2SC3293 2SD1322 2SD 1215 te T 2SD1323 2SD 1216 te T 2SD1324 2SD 1217 - te T 2SD1393 2SD1481 2SD1521 2SD1325 2SD1647 9sn 191« -■- ■- «r te T ?sniJ95 2SD560 2SD1329(K) 2SD1326 2SC4573 2SD 1219 ^ te T 2SD1327 2SD 1220 - 2SD1033


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PDF 2SD1443 2SD1707 2SC3293 2SD1322 2SD1323 2SD1324 2SD1393 2SD1481 2SD1521 2SD1325 2SD1570 2SD412 2SD411 2SD1488 2sd1033 2sd1193 2SC3293 2SD1647 2SD1706 2sd1707
2SB1156

Abstract: 2SD1707
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1156 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max.)@ IC= -8A ·Complement to Type 2SD1707 APPLICATIONS ·Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER scs .i w w w VALUE UNIT -130 V -80 V VCBO Collector-Base Voltage VCEO


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PDF 2SB1156 2SD1707 -100V; 2SB1156 2SD1707
2SD2340 equivalent

Abstract: D2254 2SB1493 2SD1641 2SD1485 2SA1185 2SD2328 2SD2052 equivalent 2SB1531 2SD1707
Text: Transistors (Selection Guide by Applications and Functions) ■Silicon Large Power Transistors Application Functions Vceo (V) lc (A) VcE(sat) (V) Packag e (No.) lc (A) Ib (mA) TOP-3(a) (D64) TOP-3F(a) (D67) General-use 50 7 <0.8 7 700 2SA1185 100 5 <2 3 300 2SB1054/2SD1485 140 7 <2 5 500 2SB1421 LOW VcE(sat) 80 10 0.2 6 300 2SB1154/2SD1705 15 0.2 7 350 2SB1155/2SD1706 20 0.25 ' 8 400 2SB1156/ 2SD1707 Darlington 150 6 <1.5 3 60 2SD1457 200 6 <1.5 3 60 2SD1457A 400 20 <2.0 20


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PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 2SD2340 equivalent D2254 2SB1493 2SD1641 2SD1485 2SA1185 2SD2328 2SD2052 equivalent 2SB1531 2SD1707
D2029

Abstract: D2328 2SD2340 2SD1641
Text: Transistors (Selection Guide by Applications and Functions) Silicon Large Power Transistors Application Functions General-use Low VcE(sad Darlington High-hre VcEO (V) 50 100 140 80 150 200 400 55 60 80/100 lc (A) 7 5 7 10 15 20 6 6 20 4 10 3 VcE(sat) (V) <0.8 <2 <2 0.2 0.2 0.25 <1.5 <1.5 <2.0 <2 <0.5 <1 lc 7 3 5 6 7 8 3 3 20 0.5 5 2 (A) Ib (mA) Packag e (No.) TOP-3(a) (D60) 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/ 2SD1707 2SD1457 2SD1457A 2SC4535


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PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 D2029 D2328 2SD2340
2SD1485

Abstract: 2SD2340 equivalent audio Darlington 200 W 2SB1154/2SD1705
Text: Transistors (Selection Guide by Applications and Functions) Silicon Large Power Transistors Application · Functions Package (No.) V ceo (V ) le VcE(sat) (V ) lc Ib (A) 7 5 7 10 (A) 50 (mA) 700 300 500 300 350 400 60 60 800 1(A) 2 100 50 TOP-3(a) (D64) 2SA1185 TOP-3F(a) (D67) < 0.8 < 2 < 2 0.2 0.2 0.25 < 1.5 < 1.5 7 3 5 6 7 8 3 3 20 10 0.5 5 2 General-use 100 140 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/ 2SD1707 2SD1457 2SD1457A 2SC3054 2SC4258(TOP


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PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC3054 2SC4258 2SD1485 2SD2340 equivalent audio Darlington 200 W
2005 - 2SD1707

Abstract: 2SB1156
Text: JMnic Product Specification 2SB1156 Silicon PNP Power Transistors DESCRIPTION With TO-3PFa package Complement to type 2SD1707 Low collector saturation voltage Large collector current APPLICATIONS For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -130 V VCEO Collector-emitter


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PDF 2SB1156 2SD1707 2SD1707 2SB1156
Not Available

Abstract: No abstract text available
Text: Transistors (Selection Guide by Applications and Functions) ■Silicon Large Power Transistors Application Functions Vceo (V) lc (A) Packag e (No.) VcE(sat) (V) lc Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 100 5 <2 3 300 140 7 <2 5 500 10 0.2 6 300 2SB1154/2SD1705 15 0.2 7 350 2SB1155/2SD1706 20 General-use 7 0.25 ' 8 400 2SB1156/ 2SD1707 80 LOW VcE(sat


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PDF 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SA1185 2SB1054/2SD1485 2SB1421 2SD1457 2SD1457A 2SB1252/2SD1892 2SB1502/2SD2275
2sd1707

Abstract: 2SB1156
Text: SavantIC Semiconductor Product Specification 2SB1156 Silicon PNP Power Transistors DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1707 ·Low collector saturation voltage ·Large collector current APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -130 V VCEO


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PDF 2SB1156 2SD1707 2sd1707 2SB1156
2SD2340 equivalent

Abstract: 2SB1531 2SD1641 2SD1457A 2SD1457 2SC4535 2SB1421 2SA1185 2SD2328 2SD2052 equivalent
Text: Transistors (Selection Guide by Applications and Functions) ■Silicon Large Power Transistors Application Functions Vceo (V) lc (A) VcE(sat) (V) Packag e (No.) lc (A) IB (mA) TOP-3(a) (D64) TOP-3F(a) (D67) General-use 50 7 <0.8 7 700 2SA1185 100 5 <2 3 300 2SB1054/2SD1485 140 7 <2 5 500 2SB1421 LOW VcE(sat) 80 10 0.2 6 300 2SB1154/2SD1705 15 0.2 7 350 2SB1155/2SD1706 20 0.25 ' 8 400 2SB1156/ 2SD1707 Darlington 150 6 <1.5 3 60 2SD1457 200 6 <1.5 3 60 2SD1457A 400 20 <2.0 20


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PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 2SD2340 equivalent 2SB1531 2SD1641 2SD1457A 2SD1457 2SC4535 2SB1421 2SA1185 2SD2328 2SD2052 equivalent
2SD2340 equivalent

Abstract: D2250 2SD1485 d2554 2SD2340 audio Darlington 200 W 2sd1641 2SD2052 equivalent
Text: 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/ 2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641


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PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 2SD2340 equivalent D2250 2SD1485 d2554 2SD2340 audio Darlington 200 W 2SD2052 equivalent
KA 3264

Abstract: 2SC3136 2SC3259 2SD689 K 3264 2SC3019 2SC2456 2SD1431 2sc2371 2SC2482
Text: - 158 - S « Type No. tt S Manuf. = 3 SANYO TOSHIBA H m. NEC S ÍL HITACHI X ± m FUJITSU te t MATSUSHITA .E. * MITSUBISHI o - A ROHM 2SC 3259 * STSTÈ 2SC2979 2SC3508 2SC 3260 * ÍIMITI: 2SC3508 2SC 3261 „ «SÄ 2SC2555 2SC3322 2SD1457 2SC 3262 * STStc 2SC3306 2SC3509 2SC 3263 ^ ■tf-vírv 2SD1706 2SC 3264 ^ vvïy 2SD1707 2SC 3265 ✓ M S 2 SDÌ 2 9 5 ¿«JUllUl 2SD1328 2SC3440 2SÜ1781K 2SC 3266 ✓ S 3£ 2SD1246 2SD1513 2SD965 2SC 3267 ï S 2SD1246


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PDF 2SC2979 2SC3508 2SC2555 2SC3322 2SD1457 2SC3306 2SC3509 2SD1706 2SD1707 KA 3264 2SC3136 2SC3259 2SD689 K 3264 2SC3019 2SC2456 2SD1431 2sc2371 2SC2482
2sd1707

Abstract: 2SB1156
Text: Inchange Semiconductor Product Specification 2SB1156 Silicon PNP Power Transistors DESCRIPTION With TO-3PFa package Complement to type 2SD1707 Low collector saturation voltage Large collector current APPLICATIONS For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO PARAMETER Collector-base voltage CONDITIONS VALUE UNIT Open emitter -130 V


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PDF 2SB1156 2SD1707 2sd1707 2SB1156
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