The Datasheet Archive

2SD1485 datasheet (10)

Part Manufacturer Description Type PDF
2SD1485 Panasonic NPN Transistor Original PDF
2SD1485 Panasonic Silicon NPN triple diffusion planar type Original PDF
2SD1485 Others The Transistor Manual (Japanese) 1993 Scan PDF
2SD1485 Others Transistor Substitution Data Book 1993 Scan PDF
2SD1485 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SD1485 Others Japanese Transistor Cross References (2S) Scan PDF
2SD1485 Others Cross Reference Datasheet Scan PDF
2SD14850P Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 100VCEO 5A TOP-3F Original PDF
2SD1485P Panasonic Silicon PNP Triple Diffusion Planar Type Power Transistor Original PDF
2SD1485Q Panasonic Silicon PNP Triple Diffusion Planar Type Power Transistor Original PDF

2SD1485 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2SC521A

Abstract: 2sc1684 2SC4455 2SC2258 2SC2229 2SC1687 2SC1359 C2258 2sc752 k 2SC549
Text: €¢ a m 2SC752(G)TM 2SC2258 2SC 101 '' s s 2SC521A 2SD1485 2SC 101A s s 2SC521A 2SD1485 2SC 102 S 2 2SC521A 2SD1485 2SC 103 3E S 2SD1485


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PDF 2SC2258 2SC2229 2SC4455 2SC2230 C2258 2SC521A 2sc1684 2SC4455 2SC2258 2SC2229 2SC1687 2SC1359 C2258 2sc752 k 2SC549
ir 4606

Abstract: 4604 2SC4621 2SD2365 4606 2SD1347 2sc4611 2SC3688 2SD1485 2SD1187
Text: 2SD1110 2SD1485 2SD2062 2SC 4611 0 iL 2SD1187 2SD1485 2SC 4612 H if 2SD1211 2SC 4613 H


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PDF 2SC3552 2SC4028 2SC3536 2SC4111 2SC4317 2SC3583 2SC3904 2SC4320 2SC4094 2SC4515 ir 4606 4604 2SC4621 2SD2365 4606 2SD1347 2sc4611 2SC3688 2SD1485 2SD1187
2SD811 TOSHIBA

Abstract: 2SC510 RY 228 2SD877 2SD2061 2SD867 2SD2023 2SD880 2SD1270 2SC2120
Text: 2SC1226 2SC1398 2SC1398A 2SD1485 2SD1270 T MITSUBISHI h m - A ROHM 2SD1741 2SD2023 , 2SD811 2SD811 2SD867 2SD867 2SD428 2SD425 2SD1135 2SD1135 2SD1266A 2SD1266A 2SD1485 2SD468


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PDF 2SD228 2SD234 2SD235 2SC236 2SD237 2SD238 2SD241 2SD242 2SD243 2SD244 2SD811 TOSHIBA 2SC510 RY 228 2SD877 2SD2061 2SD867 2SD2023 2SD880 2SD1270 2SC2120
2SD2061

Abstract: 2SD880 2SC782 2SD867 2SD877 2SD797 2SC782 TOSHIBA 2Sd 123 tl 2S0880 2SC783
Text: - 207 - m % S tt Manuf. h SANYO m TOSHIBA a NEC m a HITACHI ti * ± FUJITSU a T y p e No. ¿ou i¿u vn; * * * * 2SD121 (H) 2SD122 2SD123 2SD124 fâ T MA T S U S H I T A 2SCÍ338 2SC1398 2SD1266A 2SD1264 £ MITSUBISHI E. - ROHM A ÎL ¿dUd¿0 2SD525 2SD526 2SD2081 2SD2061 2SD2061 2SD2061 0 ÍL a £ ti m m * ^ 2SD867 2SD867 * 2SD867 2SD867 2SD1485 2SD1485 * $ * * * * * * * * * * * * * * 2SD 124A (H) ocn loe 2SD 125A (H


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PDF 2SD121 2SD122 2SD123 2SD124 2SC1398 2SD1266A 2SD1264 2SD525 2SD526 2SD2081 2SD2061 2SD880 2SC782 2SD867 2SD877 2SD797 2SC782 TOSHIBA 2Sd 123 tl 2S0880 2SC783
2SD1485

Abstract: 2SD2340 equivalent audio Darlington 200 W 2SB1154/2SD1705
Text: / 2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC3054 2SC4258(TOP , /between products (Ex. 2SB1054/ 2SD1485 ) (Package Symbol) TOP-3F = TOP-3 Type Full Pack Package, TOP-3L =


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PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC3054 2SC4258 2SD1485 2SD2340 equivalent audio Darlington 200 W
Not Available

Abstract: No abstract text available
Text: ) 2SA1185 2SB1054/ 2SD1485 2SB1421 150 6 <1.5 3 60 2SD1457 200 6 <1.5 3 60 , / 2SD1485 ) (Package Symbol) T0-220(F) =TO -22d Type Full Pack Package, TOP-3F =TO P-3 Type Full Pack


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PDF 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SA1185 2SB1054/2SD1485 2SB1421 2SD1457 2SD1457A 2SB1252/2SD1892 2SB1502/2SD2275
2SD1485

Abstract: 2SB1054 10VX1A
Text: Power Transistors 2SD1485 2SD1485 Silicon PNP Triple-Diffused Planar Type High Power Amplifier Complementary Pair with 2SB1054 ■Features • Very good linearity of DC current gain (hFE) • Wide area of safety operation (ASO) • High transition frequency (fT) • "Full Pack" package for simplified mounting on a heat sink with one screw ■Absolute Maximum Ratings (Tc=25°C) Item Symbol , Material Copyrighted By Its Respective Manufacturer Power Transistors 2SD1485 Pc- Ta Ic-VcE (1) Tc =


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PDF 2SD1485 2SB1054 10VX0 10VX1A 100x100x2mm 2SD1485 2SB1054
2sc2888

Abstract: 2SC2926 2SC2166 2SD1270 2sc1907 2SC387A 2sc1047 2Sd917 2SC787 2sc2314
Text: ) 2SC1047 2SD1485 2SD1270 2SD1270 2SD1485 2SD917 2SD917 2SD917 2SC829 2SC1973 2SC1809 m z z z z z z


OCR Scan
PDF 2SC740 2SC741 2SC742 2SC743 2SC745 2SC746 2SC748 2SC387A 2SC998 2SC549 2sc2888 2SC2926 2SC2166 2SD1270 2sc1907 2sc1047 2Sd917 2SC787 2sc2314
1999 - 2SB1054

Abstract: 2SD1485
Text: Power Transistors 2SD1485 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1054 Unit: mm q q s Absolute Maximum Ratings (TC=25°C) 21.0±0.5 15.0±0.2 q Extremely satisfactory linearity of the forward current transfer ratio hFE Wide area of safe operation (ASO) High transition frequency fT Full-pack package which can be , classification Rank Q P hFE2 60 to 120 100 to 200 1 Power Transistors 2SD1485 PC


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PDF 2SD1485 2SB1054 2SB1054 2SD1485
2sc1815

Abstract: 2SC4698 2SC930 2SC1684 S 2SC1684 2SC828 2SC387A 2SD917 2SC521A 2SC941TM
Text: - 77 m s Type No. tt S Manuf. = # SANYO Ä S TOSHIBA 0 W. NEC B iL HITACHI » ± il FUJITSU fé T MATSUSHITA H * MITSUBISHI □ - A ROHM 2SC 15 V ~ — 2SC829 2SC 17 S 3Î 2SC829 2SC 17A M. S 2SC829 2SC 18 S 2 2SC828 2SC 21 S S 2SC521A 2SD1485 2SC 22 0 m 2SD526 2SC 23 - a m ZÒVSZ6 2SC 24 ED ifflül 2SD526 2SC 26 *±a 2SC1684 2 , - 2SD917 2SC 43 V-— 2SC4698 2SC 44 V- 2SC4698 2SD1485 2SC 45 0 a 2SC829 2SC 50


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PDF 2SC829 2SC828 2SC521A 2SD1485 2SD526 2SC1684 2sc1815 2SC4698 2SC930 2SC1684 S 2SC1684 2SC828 2SC387A 2SD917 2SC521A 2SC941TM
2SD867

Abstract: 2SC1815 2SC1959 2SC828A 2sd2023 2SD877 2sd797 2SD917 2SC828A S 2SD1488
Text: 2S0 104 / S 2SC1959 2S0 106 / S 2SC1959 2SD 107 , S 'S. 2SD1485 2SD 108 S S 2SD1485 2SD 110 * M S. 2SD867 2SD 111 ✓ S S 2SD867 2SD 113 ✓ S S 2SD797 2SD


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PDF 2SC1815 2SC828A 2SC1959 2SD880 2SD2023 2SD867 2SD867 2SC1815 2SC1959 2SC828A 2sd2023 2SD877 2sd797 2SD917 2SC828A S 2SD1488
2005 - 2SB1054

Abstract: 2SD1485
Text: JMnic Product Specification 2SB1054 Silicon PNP Power Transistors DESCRIPTION With TO-3PFa package Complement to type 2SD1485 High transition frequency Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage


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PDF 2SB1054 2SD1485 -100V; -20mA 2SB1054 2SD1485
2SD2340 equivalent

Abstract: D2254 2SB1493 2SD1641 2SD1485 2SA1185 2SD2328 2SD2052 equivalent 2SB1531 2SD1707
Text: Transistors (Selection Guide by Applications and Functions) ■Silicon Large Power Transistors Application Functions Vceo (V) lc (A) VcE(sat) (V) Packag e (No.) lc (A) Ib (mA) TOP-3(a) (D64) TOP-3F(a) (D67) General-use 50 7 <0.8 7 700 2SA1185 100 5 <2 3 300 2SB1054/ 2SD1485 140 7 <2 5 500 2SB1421 LOW VcE(sat) 80 10 0.2 6 300 2SB1154/2SD1705 15 0.2 7 350 2SB1155/2SD1706 20 0.25 ' 8 , products (Ex. 2SB1054/ 2SD1485 ) (Package Symbol) T0-220(F) =TQ-220 Type Full Pack Package, TOP-3F =TOP-3


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PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 2SD2340 equivalent D2254 2SB1493 2SD1641 2SD1485 2SA1185 2SD2328 2SD2052 equivalent 2SB1531 2SD1707
D2029

Abstract: D2328 2SD2340 2SD1641
Text: ) 2SA1185 2SB1054/ 2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 , . 2SB1054/ 2SD1485 ) (Package Symbol) T0-220(F) =TO -220 Type Full Pack Package, TOP-3F =TO P-3 Type Full Pack


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PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 D2029 D2328 2SD2340
2SD2340 equivalent

Abstract: 2SB1531 2SD1641 2SD1457A 2SD1457 2SC4535 2SB1421 2SA1185 2SD2328 2SD2052 equivalent
Text: Transistors (Selection Guide by Applications and Functions) ■Silicon Large Power Transistors Application Functions Vceo (V) lc (A) VcE(sat) (V) Packag e (No.) lc (A) IB (mA) TOP-3(a) (D64) TOP-3F(a) (D67) General-use 50 7 <0.8 7 700 2SA1185 100 5 <2 3 300 2SB1054/ 2SD1485 140 7 <2 5 500 2SB1421 LOW VcE(sat) 80 10 0.2 6 300 2SB1154/2SD1705 15 0.2 7 350 2SB1155/2SD1706 20 0.25 ' 8 , products (Ex. 2SB1054/ 2SD1485 ) (Package Symbol) T0-220(F) =TQ-220 Type Full Pack Package, TOP-3F =TOP-3


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PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 2SD2340 equivalent 2SB1531 2SD1641 2SD1457A 2SD1457 2SC4535 2SB1421 2SA1185 2SD2328 2SD2052 equivalent
2SD2340 equivalent

Abstract: D2250 2SD1485 d2554 2SD2340 audio Darlington 200 W 2sd1641 2SD2052 equivalent
Text: 2SB1054/ 2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 , possible Complementary pair marked with " / " between products (Ex. 2SB1054/ 2SD1485 ) 128 Panasonic


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PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 2SD2340 equivalent D2250 2SD1485 d2554 2SD2340 audio Darlington 200 W 2SD2052 equivalent
Not Available

Abstract: No abstract text available
Text: 2SD1485 Power Transistors 2SD1485 Silicon PNP Triple-Diffused Planar Type High Power Amplifier Complementary Pair with 2SB1054 Features · V ery good linearity of DC current gain (hFE) · Wide area of safety operation (ASO) · High transition frequency (ft) · "Full P ack" package for simplified mounting on a heat sink with one screw Package Dimensions Absolute Maximum Ratings (Tc=25°C) Item Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current


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PDF 2SD1485 2SB1054 bT32flS2 Di485
2003 - 2SB1054

Abstract: 2SD1485
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD1485 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1054 5.0±0.2 (0.7) 15.0±0.3 (3.2) 15.0±0.2 3.2±0.1 (3.5) Solder Dip · Excellent collector current IC characteristics of forward current transfer ratio hFE · Wide safe operation , 2003 SJD00199BED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1485


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PDF 2002/95/EC) 2SD1485 2SB1054 2SB1054 2SD1485
2003 - Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD1485 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1054 Features · Excellent collector current IC characteristics of forward current transfer ratio hFE · Wide safe operation area · High transition frequency fT · Full-pack package which can be installed , This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1485 PC Ta 80 IC VCE 10


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PDF 2002/95/EC) 2SD1485 2SB1054
2SD867

Abstract: 2SD880 2SD797 2SD917 2SC1815 250880 2S0867 2SD1264 2SD877 2S0880
Text: 2SD917 2SD 67 / = m 2SD428 2SD 68 - = m 2SD428 2SD1485 2SD 70 s m 2SD877 2SD1266


OCR Scan
PDF 2SD867 2SD1110 2SD867 2SC1755 2SD1135 2SD797 2SC1959 2SC1815 2SD880 2SD797 2SD917 2SC1815 250880 2S0867 2SD1264 2SD877 2S0880
2SD1460

Abstract: 2SD1453 2SB1045 2SD1457 2SD1456 2SD1455 2SD1450 2SD1472 2SD1468 2SD1461
Text: 0.5 30 82 390 3 0.1 0.4 0.15 0.015 2SD1485 KT PA 100 100 5 3 60 50 100 40 200 5 1 2 3 0.3 2SD1486 , 5* (SC-59A) EBC 2SD1484K 20* 5 0.5 170* 2SB1054 (T0P-3F(a) BCE 2SD1485 20* 5 0.5


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PDF 2SD1450 2SD1453 2SD1455 2SD1456 2SD1457 2SD1457A 2SD1458 2SD1459 O-220F 2SD1475 2SD1460 2SB1045 2SD1472 2SD1468 2SD1461
2003 - 8A60

Abstract: 2SB1054 2SD1485
Text: Power Transistors 2SD1485 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1054 5.0±0.2 (3.2) 11.0±0.2 15.0±0.2 3.2±0.1 (3.5) Solder Dip · Excellent collector current IC characteristics of forward current transfer ratio hFE · Wide safe operation area · High transition frequency fT · Full-pack package which can be installed to the , hFE2 60 to 120 100 to 200 Publication date: September 2003 SJD00199BED 1 2SD1485 PC


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PDF 2SD1485 2SB1054 8A60 2SB1054 2SD1485
2SD588

Abstract: 2SD427 2SD2006 2SD572 2sd573 2SD586A 2SC3133 2SC732 2SD471 2SC1775
Text: 2SC3377 2SD1563 2SD1563 2SC4642K 2SC2412K 2SD471 ZSD1616 2SD1101 2SD602 2SD1485 2SC3440 2SD1781K 2SD2290


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PDF 2SD558 2SD560 2SD565 2SD568 2SD569 2SD570 2SD571 2SD572 2SD573 2SD574 2SD588 2SD427 2SD2006 2SD586A 2SC3133 2SC732 2SD471 2SC1775
2SD867

Abstract: 2SD650 2SD642 2SD2061 2SD797 2SC2240 2SC1815 2SC1398 2s0867 2s0797
Text: 2SC2497 2SD 178A fô T 2SC2497 2SD 179 B m 2SD642 2SD 180 y a m 2SD428 2SD1485


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PDF 2SC783 2SD1138 2SD859 2SD2061 2SD867 2SC828 2SD797 2SD867 2SD650 2SD642 2SD2061 2SD797 2SC2240 2SC1815 2SC1398 2s0867 2s0797
Not Available

Abstract: No abstract text available
Text: 2SD1485 Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)5 Absolute Max. Power Diss. (W)3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)2 @I(C) (A) (Test Condition)3 @I(B) (A) (Test Condition)300m h(FE) Min. Current gain.40 h(FE) Max. Current gain.200 @I(C) (A) (Test Condition)1 @V(CE) (V) (Test Condition)5 f(T) Min. (Hz) Transition Freq20MÂ @I(C) (A) (Test Condition)500m @V(CE) (V


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PDF 2SD1485 Freq20MÃ
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