The Datasheet Archive

2SC5464 datasheet (8)

Part ECAD Model Manufacturer Description Type PDF
2SC5464 2SC5464 ECAD Model Others NPN Transistor Scan PDF
2SC5464 2SC5464 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SC5464 2SC5464 ECAD Model Toshiba NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) Scan PDF
2SC5464 2SC5464 ECAD Model Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
2SC5464FT 2SC5464FT ECAD Model Others NPN Transistor Scan PDF
2SC5464FT 2SC5464FT ECAD Model Toshiba NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) Scan PDF
2SC5464-O 2SC5464-O ECAD Model Toshiba TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF
2SC5464-Y 2SC5464-Y ECAD Model Toshiba TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF

2SC5464 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - 2SC5464

Abstract: No abstract text available
Text: 2SC5464 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5464 VHF~UHF Band Low Noise Amplifier Applications · Low noise figure, high gain. · Unit: mm NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage , 2SC5464 Marking 2 2003-07-31 2SC5464 RESTRICTIONS ON PRODUCT USE 030619EAA · The


Original
PDF 2SC5464 2SC5464
2009 - Not Available

Abstract: No abstract text available
Text: 2SC5464 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5464 VHF~UHF Band Low Noise Amplifier Applications · · Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage , capacitance bridge. 1 2007-11-01 2SC5464 Marking 2 2007-11-01 2SC5464 RESTRICTIONS ON


Original
PDF 2SC5464
2SC5464

Abstract: No abstract text available
Text: 2SC5464 NPN 2SC5464 VHF~UHF · : mm : NF = 1.1dB, |S21e |2 = 12dB (f = 1 GHz) (Ta = 25°C) VCBO 20 V VCEO 12 V VEBO 3 V IC 60 mA IB 30 mA PC 100 mW Tj 125 °C Tstg -55~125 °C , 2010-05-14 2SC5464 2 2010-05-14 2SC5464 · · · ·


Original
PDF 2SC5464 2SC5464
2SC5464

Abstract: HN9C20FT marking 8V
Text: TOSHIBA HN9C20FT TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N9C20FT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini (6pins) package : TU6 MOUNTED DEVICES Q1 Q2 Three-pins (SSM) mold products are corresponded. 2SC5464 2SC5464 MAXIMUM RATINGS (Ta = 25°C) Unit in mm CHARACTERISTIC SYMBOL Q1/Q2 UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage Vebo 3 V Collector


OCR Scan
PDF HN9C20FT N9C20FT 2SC5464 2SC5464 HN9C20FT marking 8V
Not Available

Abstract: No abstract text available
Text: T O SH IB A 2SC5464 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE J fi Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. N F = l.ld B , |S 2 iel 2 = 12dB (f=lG H z) 0.8±0.1 I- . I MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base , herein is subject to change w ithout notice. 1998 08-20 1/2 - T O SH IB A 2SC5464 ELECTRICAL


OCR Scan
PDF 2SC5464
2SC5464

Abstract: No abstract text available
Text: TOSHIBA 2SC5464 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 4 6 4 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • NF=l.ldB, |S2ie|2 = 12dB (f=lGHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 , 2SC5464 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX , terminal method with capacitance bridge. 2 2001-05-31 TOSHIBA 2SC5464 RESTRICTIONS ON PRODUCT USE


OCR Scan
PDF 2SC5464 2SC5464
2007 - 2SC5464

Abstract: No abstract text available
Text: 2SC5464 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5464 VHF~UHF Band Low Noise Amplifier Applications · · Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage , capacitance bridge. 1 2007-11-01 2SC5464 Marking 2 2007-11-01 2SC5464 RESTRICTIONS ON


Original
PDF 2SC5464 2SC5464
2010 - 2SC5464

Abstract: No abstract text available
Text: 2SC5464 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5464 VHF~UHF Band Low Noise Amplifier Applications · Low noise figure, high gain. · Unit: mm NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit , : Cre is measured by 3 terminal method with capacitance bridge. 1 2010-05-14 2SC5464 Marking 2 2010-05-14 2SC5464 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its


Original
PDF 2SC5464 2SC5464
2sc5464

Abstract: No abstract text available
Text: T O SH IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5464 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS 2SC5464 · · Low Noise Figure, High Gain. N F = l.ld B , |S 2 ie l 2 = 12dB (f= lG H z) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power , T O SH IB A 2SC5464 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Collector Cut-off


OCR Scan
PDF 2SC5464 2sc5464
2000 - 2SK3075 equivalent

Abstract: 10 ghz transistor MT3S04T 2SK3078 MT6P06E 3SK320 transistor 2SC5066 MT6P03AE 2SC5066 24lu1
Text: 2SC5066 2SC5464 MT3S03AS MT3S04AS MT3S07S 2SC5086FT 2SC5066FT 2SC5464FT MT3S03AT MT3S04AT , 2SC5086FT 2SC5086 2SC5086FT 2SC5464 2SC5464FT MT3S04AS MT3S04AT MT3S03AS MT3S03AT VCO (2 , 2SC5084 _ 2SC5085 2SC5086 2SC5086FT 2SC5463 2SC5464 2SC5464FT 2SC5087 _ 2SC5088 , 2SC5066 2SC5066FT 2SC5463 2SC5464 2SC5464FT MT3S04A MT3S04AU MT3S04AS MT3S04AT MT4S04A MT4S04AU , 2SC5464 2SC5066 2SC5108 MT3S03AS MT3S04AS MT3S07S 2SC5066FT 2SC5086FT 2SC5108FT 2SC5111FT


Original
PDF 2SC5065 2SC5085 2SC5090 2SC5095 MT3S06U MT3S07U 2SC5066 2SC5086 2SC5091 2SC5096 2SK3075 equivalent 10 ghz transistor MT3S04T 2SK3078 MT6P06E 3SK320 transistor 2SC5066 MT6P03AE 2SC5066 24lu1
C 5464 transistor

Abstract: VHF-UHF Band Low Noise Amplifier 2SC5464 HJFE
Text: TOSHIBA 2SC5464 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 SC 5464 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • NF=l.ldB, |S2ie|2 = 12dB (f=lGHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage Vebo 3 V Collector Current ic 60 mA , contained herein is subject to change without notice. 1998-08-20 1/2 TOSHIBA 2SC5464 ELECTRICAL


OCR Scan
PDF 2SC5464 C 5464 transistor VHF-UHF Band Low Noise Amplifier 2SC5464 HJFE
2SC546

Abstract: No abstract text available
Text: TO SHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C20FT H M V Q V f 7 n F T V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS U nit in mm · TWO devices are built in to the super-thin and ultra super mini (6pins) package : TU6 2.1 ± 0.1 1.25 ± 0 -1 MOUNTED DEVICES 5 ¿ n. r Q1 Three-pins (SSM) mold products are corresponded. M A X IM U M RATINGS (Ta = 25°C) Q2 2SC5464 s. n ~ 2SC5464 J UNIT V V V mA mA mW


OCR Scan
PDF HN9C20FT 2SC5464 --15mA, 1000M 500MHz 1000MHz 2SC546
Not Available

Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C20FT HN9C20FT V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS Unit in mm TWO devices are built in to the super-thin and ultra super mini (6pins) package : TU6 M O U N T E D DEVICES Q1 Three-pins (SSM) mold products are corresponded. M A X IM U M RATINGS (Ta = 25°C) Q2 2SC5464 2SC5464 Q1/Q2 20 12 3 60 30 200 125 -5 5 -1 2 5 UNIT V V V mA mA mW °C °C SYMBOL CHARACTERISTIC Collector-Base


OCR Scan
PDF HN9C20FT 2SC5464 500MHz --15mA, 1000MHz
Not Available

Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C21 FT HN9C21FT V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS Unit in mm · TWO devices are built in to the super-thin and ultra super mini (6pins) package : TU6 Q1 Q2 M O U N T E D DEVICES Three-pins (SSM) mold products are corresponded. M A X IM U M RATINGS (Ta = 25°C) 2SC5261 2SC5464 Q1 15 7 1.5 15 7 Q2 20 12 3 60 30 UNIT V V V mA mA mW °C °C SYMBOL CHARACTERISTIC Collector-Base Voltage


OCR Scan
PDF HN9C21 HN9C21FT 2SC5261 2SC5464 1000MHz 2000MHz CB--10V, --15mA,
Not Available

Abstract: No abstract text available
Text: TOSHIBA HN9C20FT TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C20FT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm • TWO devices are built in to the super-thin and ultra super mini (6pins) package : TU6 MOUNTED DEVICES Q1 Q2 Three-pins (SSM) mold products are corresponded. 2SC5464 2S05464 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL Q1/Q2 UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage Vebo 3 V Colleetor Current ic


OCR Scan
PDF HN9C20FT 2SC5464 2S05464 500MHz 1000MHz 1000MHz
Not Available

Abstract: No abstract text available
Text: TO SHIBA TENTATIVE TOSHIBA TRANSISTOR HN9C19FT HNQT1QFT V V « r SILICON NPN EPITAXIAL PLANAR TYPE V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm · TWO devices are built in to the super-thin and ultra super mini (6pins) package : TU6 2.1 ±0.1 1.25 ± 0 -1 MOUNTED DEVICES 5 Q1 Three-pins (SSM) mold products are corresponded. M A X IM U M RATINGS (Ta = 25°C) Q2 ¿ -n. r U - 2SC5096 2SC5464 s . J Q1 8 1.5 15 7 20 Q2 12 3 60


OCR Scan
PDF HN9C19FT 2SC5096 2SC5464 Dissipat000MHz 1000M
2SC5096

Abstract: 2SC5464 HN9C19FT
Text: TOSHIBA HN9C19FT TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C19FT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini (6pins) package : TU6 MOUNTED DEVICES Q1 Q2 Three-pins (SSM) mold products are corresponded. 2SC5096 2SC5464 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL Q1 Q2 UNIT Collector-Base Voltage vCBO 20 V Collector-Emitter Voltage vCEO 8 12 V Emitter-Base Voltage VEBO 1.5 3 V


OCR Scan
PDF HN9C19FT 2SC5096 2SC5464 2SC5096 2SC5464 HN9C19FT
Not Available

Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C19FT HN9C19FT V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS Unit in mm · TWO devices are built in to the super-thin and ultra super mini (6pins) package : TU6 2.1 ± 0.1 M O U N T E D DEVICES -B -? c Q1 Three-pins (SSM) mold products are corresponded. M A X IM U M RATINGS (Ta = 25°C) Q2 s 2SC5096 2SC5464 J Q1 20 8 1.5 15 7 200 125 -5 5 -1 2 5 12 3 60 30 Q2 UNIT V V V mA mA mW


OCR Scan
PDF HN9C19FT 2SC5096 2SC5464 1000MHz 2000MHz 1000M 2000MHz 500MHz
Not Available

Abstract: No abstract text available
Text: TOSHIBA TEN TA TIV E TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C21 FT H N Q f 71 FT u rn V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS Unit in mm · TWO devices are built in to the super-thin and ultra super mini (6pins) package : TU6 2.1 ± 0 .1 1.25 ± 0 -1 M O U N T E D DEVICES 5 Q1 Three-pins (SSM) mold products are corresponded. M A X IM U M RATINGS (Ta = 25°C) Q2 2SC5464 ¿ -n . r 2SC5261 s . U - CHARACTERISTIC


OCR Scan
PDF HN9C21 2SC5464 2SC5261 2000MHz 500MHz 1000MHz 1000MHz
2SC5096

Abstract: 2SC5464 HN9C19FT
Text: TOSHIBA HN9C19FT TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C19FT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini (6pins) package : TU6 MOUNTED DEVICES Q1 Q2 Three-pins (SSM) mold products are corresponded. 2SC5096 2SC5464 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL Q1 Q2 UNIT Collector-Base Voltage vCBO 20 V Collector-Emitter Voltage vCEO 8 12 V Emitter-Base Voltage Vebo 1.5 3 V


OCR Scan
PDF HN9C19FT 2SC5096 2SC5464 1000MHz 2000MHz 500MHz 1000MHz 2SC5096 2SC5464 HN9C19FT
2SC5261

Abstract: 2SC5464
Text: TOSHIBA HN9C21 FT TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N9C21FT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini (6pins) package : TU6 MOUNTED DEVICES Q1 Q2 Three-pins (SSM) mold products are corresponded. 2SC5261 2SC5464 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL Q1 Q2 UNIT Collector-Base Voltage VCBO 15 20 V Collector-Emitter Voltage VCEO 7 12 V Emitter-Base Voltage VEBO 1.5 3 V


OCR Scan
PDF HN9C21 N9C21FT 2SC5261 2SC5464 2SC5464
JDV2S31CT

Abstract: 1SV283B 2SK1875 1SV271 JDP2S04E IS-136 IMT-2000 DCS1800 1SV308 1SV128
Text: 2SC5463 2SC5464 ­ ­ ­ fT = 7 GHz 2SC5064 2SC5065 2SC5066 ­ ­ ­ fT = , 10 1 13 ­ 100 5 20 10 1.1 150 2SC5463 2SC5464 12 60


Original
PDF BCJ0003F BCJ0003E JDV2S31CT 1SV283B 2SK1875 1SV271 JDP2S04E IS-136 IMT-2000 DCS1800 1SV308 1SV128
TGI7785-120L

Abstract: TA4029TU MT3S11CT TA4029CTC MT4S300T MT4S300U TMD7185-2 TGI8596-50 TA4032FT TGI0910-50
Text: MT4S32U 2SC4915 2SC5066 2SC5086 2SC5091 2SC5096 2SC5108 2SC5111 2SC5322 2SC5464 MT3S03AS


Original
PDF SCJ0004R 2SC2714 2SC5064 2SC5084 2SC5089 2SC5106 2SC5109 MT3S03A MT3S04A MT3S106 TGI7785-120L TA4029TU MT3S11CT TA4029CTC MT4S300T MT4S300U TMD7185-2 TGI8596-50 TA4032FT TGI0910-50
2sc5108

Abstract: toshiba transistors catalog 2sk3476 microwave Duplexer 2SK403 UHF/VHF IC transceiver Am tuning varicap 2Sk3656 Wideband MMIC VCO covers 8 GHz to 12.5 GHz microwave transceiver 3.54 GHz
Text: 2SC5087R* 2SC5088 ­ 2SC5463 2SC5464 ­ ­ ­ fT = 7 GHz low-current device , 2SC5463 fT = 7 GHz low-current device 2SC5064 2SC5464 2SC5065 12 60 12 30


Original
PDF BCE0003E 2sc5108 toshiba transistors catalog 2sk3476 microwave Duplexer 2SK403 UHF/VHF IC transceiver Am tuning varicap 2Sk3656 Wideband MMIC VCO covers 8 GHz to 12.5 GHz microwave transceiver 3.54 GHz
2005 - FET K161

Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Text: 2SC5097 2SC5098 2SC5317FT 2SC5322 2SC5319 2SC5322FT 2SC5463 2SC5464 2SC5464FT , 337 2SC5463 MX/MY (O/Y) 515 9 [ 1 ] 2SC5464 MX/MY (O/Y) 518 2SC5464FT MX/MY (O/Y) 2SK161 MT3S06T AC 552 520 MT3S06U AC , 2SC5464 12 60 100 0.8 0.55 7 8 15 12 8 15 1 1.1 8 5 1 SSM 2SC5464FT 12 60 100 0.8 0.55 7 8 15 12 8 15 1 1.1 8


Original
PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 FET K161 Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Supplyframe Tracking Pixel