The Datasheet Archive

2SC5393 datasheet (4)

Part ECAD Model Manufacturer Description Type PDF
2SC5393 2SC5393 ECAD Model Panasonic NPN Transistor Original PDF
2SC5393 2SC5393 ECAD Model Panasonic Silicon NPN triple diffusion planar type Original PDF
2SC5393 2SC5393 ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SC5393 2SC5393 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF

2SC5393 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1999 - IC 2702

Abstract: 2SC5393
Text: Power Transistors 2SC5393 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm q q 0.7±0.1 s Absolute Maximum Ratings (TC=25°C) Parameter Symbol Ratings VCBO 600 600 400 VEBO 7 ICP 10 IC 5 A Base current IB 1 4.2±0.2 A Collector current 7.5±0.2 16.7±0.3 V Peak collector current , Transistors 2SC5393 PC - Ta (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 ×


Original
PDF 2SC5393 IC 2702 2SC5393
2000 - 2SC5393

Abstract: No abstract text available
Text: Power Transistors 2SC5393 Silicon NPN triple diffusion planar type Unit: mm 5.5±0.2 Symbol Rating 4.2±0.2 2.7±0.2 3.1±0.1 1.3±0.2 1.4±0.1 0.5+0.2 ­0.1 0.8±0.1 2.54±0.3 I Absolute Maximum Ratings TC = 25°C Parameter 4.2±0.2 7.5±0.2 16.7±0.3 14.0±0.5 · High-speed switching · High collector to base voltage VCBO · Wide area of safe operation (ASO , 2SC5393 Power Transistors PC T a (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50


Original
PDF 2SC5393 SC-67 O-220F 2SC5393
2001 - 2SC5393

Abstract: No abstract text available
Text: Power Transistors 2SC5393 Silicon NPN triple diffusion planar type Unit: mm 10.0±0.2 4.2±0.2 5.5±0.2 Symbol Collector to base voltage Rating 14.0±0.5 7.5±0.2 Solder Dip (4.0) 2.54±0.3 Unit Collector power dissipation V 7 10 A 5 A IB Storage temperature A 40 W 150 °C Tstg Ta = 25°C Junction temperature 1 PC , VCC = 150 V 0.3 µs 247 2SC5393 Power Transistors PC T a (1) TC=Ta (2) With a 100 ×


Original
PDF 2SC5393 SC-67 O-220F-A1 2SC5393
2001 - Not Available

Abstract: No abstract text available
Text: Power Transistors 2SC5393 Silicon NPN triple diffusion planar type Unit: mm 0.7±0.1 For high breakdown voltage high-speed switching I Features · High-speed switching · High collector to base voltage VCBO · Wide area of safe operation (ASO) · Satisfactory linearity of forward current transfer ratio hFE · Full-pack package which can be installed to the heat sink with one screw 10.0±0.2 5.5±0.2 , = 0.1 A, f = 0.5 MHz IC = 2 A, IB1 = 0.4 A, IB2 = - 0.8 A, VCC = 150 V 247 2SC5393 PC T a


Original
PDF 2SC5393
MN1873287

Abstract: an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283
Text: 2SC5381 2SC5381A 2SC5389 2SC5392 2SC5393 2SC5405 2SC5406 2SC5407 2SC5410 2SC5412 2SC5413


Original
PDF MN101C01C MN15224 MN101C01D MN15226 MN101C027 MN15261 MN101C03A MN101C38A MN15263 MN101C06D MN1873287 an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283
2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: No file text available


Original
PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: No file text available


Original
PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
2SC144

Abstract: 2SD466 2sc5266
Text: No file text available


OCR Scan
PDF T258-OMI FAX06 2SC144 2SD466 2sc5266
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