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2SC5359-O(Q) Trans GP BJT NPN 230V 15A 3-Pin TO-3PL (Alt: 2SC5359-O(Q)) 2SC5359-O(Q) ECAD Model
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Avnet (2) 2SC5359-O(Q) 0 14 Weeks, 2 Days 1 €1.9351 €1.79964 €1.52873 €1.45133 €1.45133 Buy Now
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RS Components 2SC5359-O(Q) Package 200 5 - $3.52 $3.387 $3.252 $3.252 Buy Now
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2SC5359 TO-3PL 2SC5359 ECAD Model
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Karl Kruse GmbH & Co KG 2SC5359 5,000 - - - - - Get Quote

2SC5359 datasheet (8)

Part ECAD Model Manufacturer Description Type PDF
2SC5359 2SC5359 ECAD Model Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-3P(L); Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: High Frequency Switching Power Transistor; Application Scope: output(120W); Part Number: 2SA1987 Original PDF
2SC5359 2SC5359 ECAD Model Others Scan PDF
2SC5359 2SC5359 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SC5359 2SC5359 ECAD Model Toshiba Silicon NPN triple diffused type transistor for power amplifier applications Scan PDF
2SC5359 2SC5359 ECAD Model Toshiba Silicon NPN Triple Diffused Type Transistor Scan PDF
2SC5359-O 2SC5359-O ECAD Model Toshiba 2SC5359 - TRANSISTOR 15 A, 230 V, NPN, Si, POWER TRANSISTOR, 2-21F1A, 3 PIN, BIP General Purpose Power Original PDF
2SC5359-O(Q) 2SC5359-O(Q) ECAD Model Toshiba 2SC5359 - TRANSISTOR NPN 230V 15A TO-3 Original PDF
2SC5359-R 2SC5359-R ECAD Model Toshiba 2SC5359 - TRANSISTOR 15 A, 230 V, NPN, Si, POWER TRANSISTOR, 2-21F1A, 3 PIN, BIP General Purpose Power Original PDF

2SC5359 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2SA1987 2SC5359

Abstract: 2SC5359 2SA1987 100W POWER AMPLIFIER 100w npn
Text: SavantIC Semiconductor Product Specification 2SC5359 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1987 APPLICATIONS ·Power amplifier applications , Product Specification 2SC5359 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless , PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.50mm) 3 2SC5359 SavantIC Semiconductor Product Specification 2SC5359 Silicon NPN Power Transistors 4 -


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PDF 2SC5359 2SA1987 2SA1987 2SC5359 2SC5359 2SA1987 100W POWER AMPLIFIER 100w npn
2012 - transistor 2SC5359

Abstract: 2SC5359
Text: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier , report and estimated failure rate, etc). 1 2012-08-31 2SC5359 Electrical Characteristics (Ta = , No. (or abbreviation code) TOSHIBA 2SC5359 Lot No. JAPAN Note 2 Note 2: A line under a Lot No , hazardous substances in electrical and electronic equipment. 2 2012-08-31 2SC5359 IC ­ VCE 20 , ) 3 2012-08-31 2SC5359 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its


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PDF 2SC5359 2SA1987 2-21F1A transistor 2SC5359 2SC5359
2007 - transistor 2SC5359

Abstract: 2SC5359 100-W 2-21F1A 2SA1987
Text: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier , report and estimated failure rate, etc). 1 2006-11-10 2SC5359 Electrical Characteristics (Tc , ) TOSHIBA 2SC5359 Lot No. JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-10 2SC5359 IC ­ VCE IC ­ VBE 20 20 Common emitter VCE = 5 V 16 , 100 Collector-emitter voltage 300 1000 3000 VCE (V) 3 2006-11-10 2SC5359


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PDF 2SC5359 2SA1987 transistor 2SC5359 2SC5359 100-W 2-21F1A 2SA1987
Not Available

Abstract: No abstract text available
Text: 2SC5359 東芝トランジスタ シリコンNPN三重拡散形 2SC5359 ○ 電力増幅ç , 2013-11-01 2SC5359 電気的特性 (Ta = 25°C) é … 目 記 号 測 定 条 件 最å , 現品表示 製品名 (または略号) TOSHIBA 2SC5359 ロット No. JAPAN 注2 特性区分記å , ®æ¬§å·žè­°ä¼šãŠã‚ˆã³æ¬§å·žç†äº‹ä¼šã®æŒ‡ä»¤ï¼ˆEU 指令 2011/65/EU)」のこ とです。 2 2013-11-01 2SC5359 IC – VCE , œ§ VCEO max 300 1000 3000 VCE (V) 3 2013-11-01 2SC5359 製品取り扱い上のお願ã


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PDF 2SC5359 2SA1987
2006 - transistor 2SC5359

Abstract: 2SC5359
Text: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier , failure rate, etc). 1 2006-11-10 2SC5359 Electrical Characteristics (Tc = 25 , ) classification R: 55 to 110, O: 80 to 160 Marking Part No. (or abbreviation code) TOSHIBA 2SC5359 , 2SC5359 IC ­ VCE 20 Common emitter Tc = 25°C 20 Common emitter VCE = 5 V IC ­ VBE IC (A) 600 , 0.01 1 VCEO max 1000 3000 Collector-emitter voltage VCE (V) 3 2006-11-10 2SC5359


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PDF 2SC5359 2SA1987 2-21F1A transistor 2SC5359 2SC5359
transistor 2SC5359

Abstract: tr 2sA1987 2SC5359 power amplifier 2sc5359 2sa1987 TRANSISTOR 2-21F1A 2SA1987 2SA1987 2SC5359
Text: TOSHIBA 2SC5359 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 POWER AMPLIFIER APPLICATIONS • High Collector Voltage : VqeO = 230V (Min.) • Complementary to 2SA1987 • Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Tc = 25°C) Unit in mm , 2001-11-05 TOSHIBA 2SC5359 IC - VCE IC - Vre 20 16 12 0' COMMON EMITTER Tc = 25 , 2001-11-05 TOSHIBA 2SC5359 RESTRICTIONS ON PRODUCT USE _000707E • TOSHIBA is continually working to


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PDF 2SC5359 2SA1987 transistor 2SC5359 tr 2sA1987 2SC5359 power amplifier 2sc5359 2sa1987 TRANSISTOR 2-21F1A 2SA1987 2SA1987 2SC5359
2SA1987 2SC5359

Abstract: 2SC5359 100W AUDIO AMPLIFIER 2SA1987
Text: Inchange Semiconductor Product Specification 2SC5359 Silicon NPN Power Transistors · DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1987 APPLICATIONS ·Power amplifier applications , Semiconductor Product Specification 2SC5359 Silicon NPN Power Transistors CHARACTERISTICS Tj , UNIT V 160 Inchange Semiconductor Product Specification 2SC5359 Silicon NPN Power , Semiconductor Product Specification 2SC5359 Silicon NPN Power Transistors 4 -


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PDF 2SC5359 2SA1987 2SA1987 2SC5359 2SC5359 100W AUDIO AMPLIFIER 2SA1987
2004 - transistor 2Sc5359

Abstract: 2SC5359 2SA1987 2SC5359 100-W 2-21F1A 2SA1987
Text: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier , 110, O: 80 to 160 1 2004-07-07 2SC5359 Marking Part No. (or abbreviation code) TOSHIBA 2SC5359 Lot No. JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-07 2SC5359 IC ­ VCE IC ­ VBE 20 20 Common emitter VCE = 5 V 16 600 400 , Collector-emitter voltage 300 1000 VCE 3000 (V) 3 2004-07-07 2SC5359 RESTRICTIONS ON


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PDF 2SC5359 2SA1987 transistor 2Sc5359 2SC5359 2SA1987 2SC5359 100-W 2-21F1A 2SA1987
Not Available

Abstract: No abstract text available
Text: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier , 2SC5359 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min , ) TOSHIBA 2SC5359 Lot No. JAPAN Note 2 Note 2: A line under a Lot No. identifies the indication of , substances in electrical and electronic equipment. 2 2012-08-31 2SC5359 IC – VCE IC – VBE , Collector-emitter voltage 300 1000 VCE 3000 (V) 3 2012-08-31 2SC5359 RESTRICTIONS ON


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PDF 2SC5359 2SA1987
transistor 2SC5359

Abstract: 2-21F1A 2SA1987 2SC5359 tr 2sA1987
Text: TOSHIBA 2SC5359 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 3 5 9 POWER AMPLIFIER APPLICATIONS Unit in mm • High Collector Voltage : VceO = 230V (Min.) • Complementary to 2SA1987 • Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta = , 2001-05-24 TOSHIBA 2SC5359 IC - VCE IC - Vre 20 16 12 0' COMMON EMITTER Tc = 25 , 2001-05-24 TOSHIBA 2SC5359 RESTRICTIONS ON PRODUCT USE _000707E • TOSHIBA is continually working to


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PDF 2SC5359 2SA1987 transistor 2SC5359 2-21F1A 2SA1987 2SC5359 tr 2sA1987
2013 - Not Available

Abstract: No abstract text available
Text: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier , production 1995-12 1 2013-11-01 2SC5359 Electrical Characteristics (Ta = 25°C) Characteristics , abbreviation code) TOSHIBA 2SC5359 Lot No. JAPAN Note 2 Note 2: A line under a Lot No. identifies the , substances in electrical and electronic equipment. 2 2013-11-01 2SC5359 IC – VCE IC – VBE , 2013-11-01 2SC5359 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and


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PDF 2SC5359 2SA1987
transistor 2SC5359

Abstract: 2-21F1A 2SA1987 2SC5359 2SC53
Text: TOSHIBA 2SC5359 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 POWER AMPLIFIER APPLICATIONS • High Collector Voltage : V^EO = 230V (Min.) • Complementary to 2SA1987 • Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta = 25°C) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 230 V Collector-Emitter Voltage VCEO 230 V , to change without notice. 1997-02-03 1/2 TOSHIBA 2SC5359 IC - VCE IC - Vre 20 16 12


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PDF 2SC5359 2SA1987 transistor 2SC5359 2-21F1A 2SA1987 2SC5359 2SC53
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 POWER AMPLIFIER APPLICATIONS 2SC5359 2Q.5MAX U nit in mm 3.3 + 0.2 · · · High Collector Voltage : V q e O = 230V (Min.) Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta = 25°C) 1.0 - 0-25 2.5 3,0 + 0.3 5.45 + 0.15 CHARACTERISTIC Collector-Base , # 1997 02-03 1/2 - TOSHIBA 2SC5359 IC - VCE IC - VRE 0 2 4 6 8


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PDF 2SC5359 2SA1987
Not Available

Abstract: No abstract text available
Text: T O S H IB A 2SC5359 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 Unit in mm POWER AMPLIFIER APPLICATIONS 2 0 .5 M A X . • • • ^ 3 .3 ± 0 .2 High Collector Voltage : V q e O = 230V (Min.) Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base , 20 J 5 O -{ boo— , «no 16 E h S3 / S tó o n D ü 2SC5359


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PDF 2SC5359 2SA1987 ----L20
2SA1987

Abstract: 2SC5359 2SA1987 2SC5359
Text: AÜK AOK Semiconductor Product Specification Silicon PNP Power Transistors 2SA1987 DESCRIPTION * With TO-3PL package * Complement to type 2SC5359 * High collector voltage APPLICATIONS * Power amplifier applications * Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to mounting base 3 Base B C E Fig.1 simplified outline (TO-3PL) and symbol Absolute maximum ratings(Ta=25'C) SYMBOL PARAMETER CONDITIONS MAX UNIT VcBO


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PDF 2SA1987 2SC5359 2SC5359 2SA1987 2SC5359
2SA1987 2SC5359

Abstract: 2sa1987 100W AUDIO ic AMPLIFIER 2sa198 2SC5359
Text: SavantIC Semiconductor Product Specification 2SA1987 Silicon PNP Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type 2SC5359 ·High collector voltage APPLICATIONS ·Power amplifier applications ·Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-3PL) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS


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PDF 2SA1987 2SC5359 -230V; 2SA1987 2SC5359 2sa1987 100W AUDIO ic AMPLIFIER 2sa198 2SC5359
2sa1987 transistor equivalent

Abstract: transistor 2SC5359 2SC5359 power amplifier 2sc5359 2sa1987 TRANSISTOR 2SA1987 2SC5359 2SA1987 power transistor audio amplifier 100w
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1987 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= -230V(Min) ·Complement to Type 2SC5359 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage applications .cn mi e ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL scs .i PARAMETER ww w VALUE UNIT -230 V


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PDF 2SA1987 -230V 2SC5359 -230V 2sa1987 transistor equivalent transistor 2SC5359 2SC5359 power amplifier 2sc5359 2sa1987 TRANSISTOR 2SA1987 2SC5359 2SA1987 power transistor audio amplifier 100w
Not Available

Abstract: No abstract text available
Text: , Line. J.E.ii£. TELEPHONE: (973) 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1987 DESCRIPTION • High Current Capability • High Power Dissipation PIN 1.BASE • High Collector-Emitter Breakdown Voltage- 2.COLLECTOR : V(BR)CEO= -230V(Min) 3. EMITTER • Complement to Type 2SC5359 1 TO-3PL package 2 3 APPLICATIONS • Power amplifier applications • Recommend for 100W


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PDF 2SA1987 -230V 2SC5359 -50mA -230V
100W AUDIO ic AMPLIFIER

Abstract: 2SA1987 2SC5359 100w audio amplifier 2SA1987 2SC5359
Text: Inchange Semiconductor Product Specification 2SA1987 Silicon PNP Power Transistors DESCRIPTION With TO-3PL package Complement to type 2SC5359 High collector voltage APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-3PL) and symbol SYMBOL VCBO VCEO VEBO SEM GE PARAMETER HAN


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PDF 2SA1987 2SC5359 -230V; 100W AUDIO ic AMPLIFIER 2SA1987 2SC5359 100w audio amplifier 2SA1987 2SC5359
2005 - 2SA1987 2SC5359

Abstract: 2SA1987 100W AUDIO ic AMPLIFIER 2SC5359
Text: JMnic Product Specification 2SA1987 Silicon PNP Power Transistors DESCRIPTION With TO-3PL package Complement to type 2SC5359 High collector voltage APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-3PL) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS MAX UNIT


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PDF 2SA1987 2SC5359 -230V; 2SA1987 2SC5359 2SA1987 100W AUDIO ic AMPLIFIER 2SC5359
2006 - 2Sa1987

Abstract: No abstract text available
Text: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications Unit: mm · · · High breakdown voltage: VCEO = -230 V (min) Complementary to 2SC5359 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO


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PDF 2SA1987 2SC5359 2-21F1A 2Sa1987
transistor 2SC5359

Abstract: 2-21F1A 2SA1987 2SC5359 power amplifier 2sc5359 2sa1987 TRANSISTOR
Text: TO SH IBA TOSHIBA TRANSISTOR 2SA1987 POWER AMPLIFIER APPLICATIONS 2SA1987 SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm · · · High Collector Voltage : V 0 e q = - 23OV (Min.) Complementary to 2SC5359 Recommend for 100W High Fidelity Audio Frequency Amplifier A-i o u t p u t o tage. i O i_ _ _ _ _ _ _ MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc = 25


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PDF 2SA1987 2SC5359 transistor 2SC5359 2-21F1A 2SA1987 power amplifier 2sc5359 2sa1987 TRANSISTOR
2SA1987

Abstract: transistor 2SC5359 2-21F1A 2SC5359
Text: TO SHIBA TOSHIBA TRANSISTOR 2SA1987 PO W ER AM PLIFIER APPLICATIONS 2SA1987 SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 20.5MAX. (¿3.3 ±0.2 · · · High Collector Voltage : VCEO-230V (Min.) Complementary to 2SC5359 Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage. SYMBOL VCBO VCEO Ve b o ic Iß f 2.5 3.0 + 0.3 1.0-0.25 5.45 ± 0.15 5.45 ± 0.15 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base


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PDF 2SA1987 VCEO----230V 2SC5359 2SA1987 transistor 2SC5359 2-21F1A
SMD TRANSISTOR H2A NPN

Abstract: amplifier circuit using 2sa1943 and 2sc5200 TTA1943 MARKING SMD PNP TRANSISTOR Wf A06 smd transistor 2SC3303 2SA1941 amp circuit TTA006B 2sC5200, 2SA1943, 2sc5198 MARKING SMD PNP TRANSISTOR h2a
Text: 2SC5242 2SC5358 2SC5359 2SC5200N ( ( ( ( ( ( ) ) ) ) ) ) 800 IC(A) TTC5460B , TTA1943 NPN TTC0002 PNP TTA0002 NPN 2SC5359 PNP 2SA1987 NPN 2SC5948 PNP , TTA1943 2SC5359 2SA1987 TO-3P(L) 180 TTC0002 6 2SC5948 2SA2120 TO-3P(N) 220 , TTC5200 TTA1943 15 TTC0002 TTA0002 18 2SC5359 2SA1987 2SC5949 2SA2121 Audio , 2SC5198 2SC5199 2SC5200 2SC5242 2SC5354 2SC5358 2SC5359 2SC5548A 2SC5692 2SC5703 2SC5712


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PDF
2004 - 100-W

Abstract: 2-21F1A 2SA1987 2SC5359
Text: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications Unit: mm · High breakdown voltage: VCEO = -230 V (min) · Complementary to 2SC5359 · Recommended for 100-W high-fidelity audio frequency amplifier output stage. Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -230 V Collector-emitter voltage VCEO -230 V Emitter-base voltage VEBO -5 V


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PDF 2SA1987 2SC5359 100-W 2-21F1A 2SA1987 2SC5359
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