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2SC5322FT datasheet (3)

Part ECAD Model Manufacturer Description Type PDF
2SC5322FT 2SC5322FT ECAD Model Others NPN Transistor Scan PDF
2SC5322FT 2SC5322FT ECAD Model Toshiba NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) Scan PDF
2SC5322FT 2SC5322FT ECAD Model Toshiba TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF

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Abstract: No abstract text available
Text: TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322FT V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS 2SC5322FT SYMBOL VCBO v CEO v EBO Tj Tstg RATING 8 5 1.5 10 5 100 125 -55-125 UNIT V V V mA mA mW °C °C TESM JEDEC EIAJ · · Low Noise Figure : NF = 1.4 dB (f = 2 GHz) High Gain : |S2i e|2 = 10 dB (f = 2 GHz) Unit in mm 1.2 ±0 .0 5 0.8 ± 0.05 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


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PDF 2SC5322FT
2SC5322FT

Abstract: No abstract text available
Text: TOSHIBA 2SC5322FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322FT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.4 dB (f = 2 GHz) • High Gain : |S2le|2 = 10 dB (f = 2 GHz) MAXIMUM RATINGS (Ta = 25°C) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 8 V Collector-Emitter Voltage VCEO 5 V Emitter-Base Voltage Vebo 1.5 V Collector , without notice. 2000-09-11 1/2 TOSHIBA 2SC5322FT ELECTRICAL CHARACTERISTICS (Ta = 25Â


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PDF 2SC5322FT 0022g 2SC5322FT
2SC5322FT

Abstract: No abstract text available
Text: TOSHIBA 2SC5322FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322FT O VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.4dB (f=2GHz) • High Gain : |S2ie|2 = 10dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C) MARKING 3 Type MU TT 2 MICROWAVE CHARACTERISTICS (Ta = 25°C) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 8 V Collector-Emitter Voltage vCEO 5 V Emitter-Base Voltage vEBO 1.5 V Collector Current ic 10 mA Base Current IB 5


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PDF 2SC5322FT 2SC5322FT
Not Available

Abstract: No abstract text available
Text: T O SH IB A 2SC5322FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 7 <; f 5 3 ? ? FT O V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 1.4dB (f=2GHz) High Gain : |S2l e|2 = 10dB (f=2GHz) Unit in mm 1.2 ± 0.05 0.8 ± 0.05 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage


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PDF 2SC5322FT
2000 - 2SK3075 equivalent

Abstract: 10 ghz transistor MT3S04T 2SK3078 MT6P06E 3SK320 transistor 2SC5066 MT6P03AE 2SC5066 24lu1
Text: 2SC5322FT MT3S06S MT3S06T MT3S07S MT3S07T USC 2SC5319 2SC5324 MT4S06U MT4S07U 3SK320 , 2SC5317FT 2SC5322FT 2SC5085 2SC5065 2SC5463 MT3S03AU MT3S04AU MT3S07U down 2SC5086 , 2SC5321 2SC5322 2SC5322FT MT3S06U MT3S06S MT4S06T MT3S07U MT3S07S MT4S07T 2SC5321 IF Amp 2SC5085 VCO (1) 2SC5085 2SC5463 MT3S04AU MT3S03AU 2SC5322 2SC5086 2SC5322FT , 2SC5319 fT = 16 GHz low-current device 2SC5320 _ 2SC5321 2SC5322 2SC5322FT 2SC5323


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PDF 2SC5065 2SC5085 2SC5090 2SC5095 MT3S06U MT3S07U 2SC5066 2SC5086 2SC5091 2SC5096 2SK3075 equivalent 10 ghz transistor MT3S04T 2SK3078 MT6P06E 3SK320 transistor 2SC5066 MT6P03AE 2SC5066 24lu1
2005 - FET K161

Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Text: HC 331 2SC5322 MU 511 2SC4247 HI 334 2SC5322FT MU 513 2SC4250 HE , 2SC5097 2SC5098 2SC5317FT 2SC5322 2SC5319 2SC5322FT 2SC5463 2SC5464 2SC5464FT , 0.4 0.3 13 3 7 10 3 7 2 1.4 3 3 2 SSM 2SC5322FT 5 10


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PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 FET K161 Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
2005 - 3SK73

Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL 3SK112 3SK78 2SC2509
Text: 2SC5317FT 2SC5322FT MT3S06T MT3S07T MT3S14T *MT3S17T *MT3S18T MT3S35T MT3S36T MT3S37T MT3S41T , JDV2S05S JDV2S07S JDV2S08S JDV2S09S JDV2S10S JDV2S13S 2SC5317FT 2SC5322FT 2SC5086FT MT3S03AT


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PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 3SK73 S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL 3SK112 3SK78 2SC2509
2005 - TOSHIBA RF Power Module S-AV24

Abstract: diode varicap BB 112 2SC386A varicap v147 2sc5066 2SK1310 3SK78 toshiba S-AV24 V101 varicap diode 1SV149
Text: LNA, Buff Amp Bipolar transistor TESM 2SC5317FT 2SC5322FT MT3S06T MT3S07T MT3S14T , fSC JDV2S05S JDV2S07S JDV2S08S JDV2S09S JDV2S10S JDV2S13S 2SC5317FT 2SC5322FT


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PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 TOSHIBA RF Power Module S-AV24 diode varicap BB 112 2SC386A varicap v147 2sc5066 2SK1310 3SK78 toshiba S-AV24 V101 varicap diode 1SV149
2004 - 2sc5088 horizontal transistors

Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 2SC2879 CB LINEAR CIRCUIT 3SK121 fet replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
Text: 2SC5322FT MT3S06T MT3S07T MT3S14T MT3S17T MT3S18T MT3S35T MT3S36T MT3S37T MT3S38T MT3S40T MT3S41T , 2SC5322FT 2SC5086FT MT3S03AT MT3S04AT MT3S05T MT3S06T MT3S07T MT3S08T MT3S11T MT3S12T MT3S14T


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PDF 3SK114 3SK126 S1255 2SC2644 2-AV24 3SK115 3SK291 S1256 2-AV26H 2sc5088 horizontal transistors S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 2SC2879 CB LINEAR CIRCUIT 3SK121 fet replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
2sc5088 horizontal transistors

Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
Text: PW-MINI(SC-62) 2SC5317 SSM 2SC5322FT TESM 50 1500* 22 - Low-saturation 2.5 voltage


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PDF BCE0016A 3501C-0109 F-93561, 2sc5088 horizontal transistors equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
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