The Datasheet Archive

2SC5320 datasheet (4)

Part ECAD Model Manufacturer Description Type PDF
2SC5320 2SC5320 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SC5320 2SC5320 ECAD Model Others NPN Transistor Scan PDF
2SC5320 2SC5320 ECAD Model Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
2SC5320 2SC5320 ECAD Model Toshiba NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) Scan PDF

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Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5320 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS (CHIP : fT = 16GHz series) 2SC5320 Unit in mm + 0.5 Low Noise Figure :NF = 1.4dB (f=2GHz) High Gain : |S2l e|2= lOdB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range MARKING 3 SYMBOL


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PDF 2SC5320 16GHz
2SC5320

Abstract: No abstract text available
Text: TOSHIBA 2SC5320 TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5320 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS (CHIP : fT = 16 GHz series) • Low Noise Figure : NF = 1.4 dB (f = 2 GHz) • High Gain : |S2le|2 = 10 dB (f = 2 GHz) MAXIMUM RATINGS (Ta = 25°C) MARKING 3 n. M U U" 1 "U 2 MICROWAVE CHARACTERISTICS (Ta = 25°C) Unit in mm CHARACTERISTIC SYMBOL , TOSHIBA 2SC5320 RESTRICTIONS ON PRODUCT USE _000707E • TOSHIBA is continually working to improve the


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PDF 2SC5320 2SC5320
Not Available

Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 2SC5320 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5320 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS (CHIP : fT = 16GHz series) 1-0.5 • • Low Noise Figure :N F=1.4dB (f=2GHz) High Gain : |S2l e|2 = 10dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage


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PDF 2SC5320 16GHz SC-59A
2SC5320

Abstract: MARKING LODB 2SC532
Text: TOSHIBA 2SC5320 TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5320 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS (CHIP : fT= 16GHz series) Low Noise Figure :NF = 1.4dB (f=2GHz) High Gain : |S2le|2 = lOdB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) MARKING 3 n. M U "n 2 Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 8 V Collector-Emitter Voltage VCEO 5 V Emitter-Base Voltage vEBO 1.5 V Collector Current ic 10 mA Base Current IB 5 mA Collector


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PDF 2SC5320 16GHz SC-59 2SC5320 MARKING LODB 2SC532
2SC5320

Abstract: No abstract text available
Text: TOSHIBA 2SC5320 TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5320 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS (CHIP : fT = 16 GHz series) • Low Noise Figure : NF = 1.4 dB (f = 2 GHz) • High Gain : |S2le|2 = 10 dB (f = 2 GHz) MAXIMUM RATINGS (Ta = 25°C) MARKING 3 n. M U U" 1 "U 2 Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 8 V Collector-Emitter Voltage VCEO 5 V Emitter-Base Voltage vEBO 1.5 V Collector Current ic 10 mA Base Current IB 5


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PDF 2SC5320 SC-59 2SC5320
2SC5320

Abstract: No abstract text available
Text: TOSHIBA 2SC5320 TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5320 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS (CHIP : fT= 16GHz series) Low Noise Figure :NF = 1.4dB (f=2GHz) High Gain : |S2le|2 = lOdB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) MARKING 3 n. M U "n 2 Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 8 V Collector-Emitter Voltage VCEO 5 V Emitter-Base Voltage vEBO 1.5 V Collector Current ic 10 mA Base Current IB 5 mA Collector


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PDF 2SC5320 16GHz SC-59 2SC5320
transistor P3d

Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5320 2 SC 5 3 2 Q VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS (CHIP : fT = 16GHz series) Low Noise Figure :N F = 1 .4 d B (f=2GHz) High Gain : |S2 l e|2= 10dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range M Ä K K iN ü 3 SYMBOL VCBO VCEO v


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PDF 2SC5320 16GHz transistor P3d
2000 - 2SK3075 equivalent

Abstract: 10 ghz transistor MT3S04T 2SK3078 MT6P06E 3SK320 transistor 2SC5066 MT6P03AE 2SC5066 24lu1
Text: 2SC5319 fT = 16 GHz low-current device 2SC5320 _ 2SC5321 2SC5322 2SC5322FT 2SC5323 , . Package 0 1 2SC5315 SMQ USQ TU6 2SC5320 S-MINI 2SC5321 USM 2SC5322 SSM , S-MINI 2SC5254 2SC5259 ­ 2SC5315 2SC5320 USM 2SC5255 2SC5260 MT3S07U


Original
PDF 2SC5065 2SC5085 2SC5090 2SC5095 MT3S06U MT3S07U 2SC5066 2SC5086 2SC5091 2SC5096 2SK3075 equivalent 10 ghz transistor MT3S04T 2SK3078 MT6P06E 3SK320 transistor 2SC5066 MT6P03AE 2SC5066 24lu1
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