The Datasheet Archive

SF Impression Pixel

Search Stock

Others
2SC532
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
PUI 2SC532 124 - - - - - Buy Now

2SC532 datasheet (40)

Part ECAD Model Manufacturer Description Type PDF
2SC532 2SC532 ECAD Model Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
2SC532 2SC532 ECAD Model Others Transistor Shortform Datasheet & Cross References Scan PDF
2SC532 2SC532 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SC532 2SC532 ECAD Model Others Cross Reference Datasheet Scan PDF
2SC532 2SC532 ECAD Model Others The Japanese Transistor Manual 1981 Scan PDF
2SC532 2SC532 ECAD Model Others Transistor Substitution Data Book 1993 Scan PDF
2SC532 2SC532 ECAD Model Others Shortform Transistor Datasheet Guide Scan PDF
2SC532 2SC532 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SC532 2SC532 ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SC5320 2SC5320 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SC5320 2SC5320 ECAD Model Others NPN Transistor Scan PDF
2SC5320 2SC5320 ECAD Model Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
2SC5320 2SC5320 ECAD Model Toshiba NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) Scan PDF
2SC5321 2SC5321 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SC5321 2SC5321 ECAD Model Others NPN Transistor Scan PDF
2SC5321 2SC5321 ECAD Model Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
2SC5321 2SC5321 ECAD Model Toshiba NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) Scan PDF
2SC5322 2SC5322 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SC5322 2SC5322 ECAD Model Others NPN Transistor Scan PDF
2SC5322 2SC5322 ECAD Model Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF

2SC532 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 2SC5321 TO SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC532 1 U nit in mm V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIONS (CHIP : f T = 16GHz series) • • Low Noise Figure High Gain 2.1 ± 0.1 NF = 1.4dB (f = 2GHz) |S21eP = 10dB (f=2GHz) 1 . 2 5 Í 0.1 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power


OCR Scan
PDF 2SC5321 2SC532 16GHz S21eP
2SC557

Abstract: 2SC548 2sc431 kt200 2SC403A 2SC546 2sc516 2SC402 2SC556 2sc500
Text: 5 55 2SC527 2SC528 2SC529 2SC530 2SC531 2SC532 2SC533 2SC534 35 20 30 30 30 30


Original
PDF 2SC401 2SC402 2SC402A 2SC403 2SC403A 2SC403B 2SC403C 2SC404 2SC405 2SC406 2SC557 2SC548 2sc431 kt200 2SC403A 2SC546 2sc516 2SC402 2SC556 2sc500
2002 - transistor 2N3563

Abstract: 2SK30 2n3819 cross reference 2sk41e 2SA726 transistor 2sc1417 2SC1026 2Sa1026 2SC2259 BC150 transistor
Text: 2SC469 2SC470 2SC471 2SC475 2SC476 2SC509 2SC528 2SC529 2SC530 2SC531 2SC532 2SC532 2SC533 2SC534 2SC535


Original
PDF
SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: No file text available


Original
PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
2SC3133 cross reference

Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a KRA2203 krc1211 NEC D288
Text: 2SC494 2SC509 2SC528 2SC529 2SC530 2SC531 2SC532 2SC533 2SC534 2SC535 2SC536 2SC537 2SC538 2SC538A 2SC539


OCR Scan
PDF 2N4401 2N5401 2N5551 2SA1004 2SA1010 2SA1013 2SA1015 2SA1016 2SA1017 2SA1019 2SC3133 cross reference Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a KRA2203 krc1211 NEC D288
AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 tungsram AC125UZ DG 7-123 PENTODE pl 508 ot-400 tungsram
Text: No file text available


OCR Scan
PDF 76665N 76889N MA748PC MA709PC jA710PC A711PC iA712PC A723PC HA741PC A747PC AC125K 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 tungsram AC125UZ DG 7-123 PENTODE pl 508 ot-400 tungsram
2N2222A 338

Abstract: TFK 949 al103 2N1167 halbleiter index transistor ad161 ac128 BSY19 tfk 1007 ac132
Text: No file text available


OCR Scan
PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 al103 2N1167 halbleiter index transistor ad161 ac128 BSY19 tfk 1007 ac132
Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 2sd103 bup 3130 C3885A 2SA102 bfq59 34d 937 086
Text: No file text available


OCR Scan
PDF
y51 h 120c

Abstract: ac128 bd192 bd124 MM1711 BD214 al103 KT368 AFY18 BFQ59
Text: No file text available


OCR Scan
PDF 500MA 500MA 240MWF 240MWF y51 h 120c ac128 bd192 bd124 MM1711 BD214 al103 KT368 AFY18 BFQ59
BU4508DX equivalent

Abstract: ST1803DHI equivalent ST2001HI equivalent BU4508DX 2SC5296 equivalent BU508DF equivalent equivalent BU2725DX bu208a toshiba 2sc5326 2SC5302 equivalent
Text: BU2727AF 2SC5306 HITACHI BU4540AL 2SC5326 HITACHI BU4508AF 2SC5427 HITACHI


Original
PDF 2SC4589 BU4525AF 2SC4692 BU4530AL 2SC4742 BU2508DW 2SC4743 BU4508AX 2SC4744 BU4508DF BU4508DX equivalent ST1803DHI equivalent ST2001HI equivalent BU4508DX 2SC5296 equivalent BU508DF equivalent equivalent BU2725DX bu208a toshiba 2sc5326 2SC5302 equivalent
MT3S111P

Abstract: 2SC3136 TIM0910-8 2SC4250FV TA4029CTC tim8996-30 TMD1925-3 TA4029 2SC5066 3SK293
Text: 2SC5091 2SC5096 2SC5108 2SC5111 2SC5322 2SC5464 MT3S03AS MT3S04AS MT3S06S MT3S07S 5 25


Original
PDF 2SC941TM 2SC3136 TIM7179-45SL TIM7179-60SL TIM7785-4SL TIM7785-4UL TIM7785-6UL TIM7785-8SL TIM7785-8UL TIM7785-12UL MT3S111P 2SC3136 TIM0910-8 2SC4250FV TA4029CTC tim8996-30 TMD1925-3 TA4029 2SC5066 3SK293
STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: No file text available


Original
PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Not Available

Abstract: No abstract text available
Text: TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322FT V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS 2SC5322FT SYMBOL VCBO v CEO v EBO Tj Tstg RATING 8 5 1.5 10 5 100 125 -55-125 UNIT V V V mA mA mW °C °C TESM JEDEC EIAJ · · Low Noise Figure : NF = 1.4 dB (f = 2 GHz) High Gain : |S2i e|2 = 10 dB (f = 2 GHz) Unit in mm 1.2 ±0 .0 5 0.8 ± 0.05 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


OCR Scan
PDF 2SC5322FT
transistor P3d

Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5320 2 SC 5 3 2 Q VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS (CHIP : fT = 16GHz series) Low Noise Figure :N F = 1 .4 d B (f=2GHz) High Gain : |S2 l e|2= 10dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range M Ä K K iN ü 3 SYMBOL VCBO VCEO v


OCR Scan
PDF 2SC5320 16GHz transistor P3d
2SC5324

Abstract: No abstract text available
Text: TOSHIBA 2SC5324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 3 2 4 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.4 dB (f = 2 GHz) • High Gain : |S2le|2 = 12 dB (f = 2 GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 8 V Collector-Emitter Voltage vCEO 5 V Emitter-Base Voltage vEBO 1.5 V Collector , 2001-05-31 TOSHIBA 2SC5324 RESTRICTIONS ON PRODUCT USE _000707E • TOSHIBA is continually working to


OCR Scan
PDF 2SC5324 2SC5324
2SC5320

Abstract: MARKING LODB 2SC532
Text: TOSHIBA 2SC5320 TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5320 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS (CHIP : fT= 16GHz series) Low Noise Figure :NF = 1.4dB (f=2GHz) High Gain : |S2le|2 = lOdB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) MARKING 3 n. M U "n 2 Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 8 V Collector-Emitter Voltage VCEO 5 V Emitter-Base Voltage vEBO 1.5 V Collector Current ic 10 mA Base Current IB 5 mA Collector


OCR Scan
PDF 2SC5320 16GHz SC-59 2SC5320 MARKING LODB 2SC532
N2C13

Abstract: 2SC5322 HN2C13FT
Text: TOSHIBA HN2C13FT TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N2C13 F T VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini (6pins) package : TU6 MOUNTED DEVICES Q1/Q2 Three-pins (SSM) mold products are corresponded 2SC5322 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 8 V Collector-Emitter Voltage VCEO 5 V Emitter-Base Voltage VEBO 1.5 V Collector Current ic 15


OCR Scan
PDF HN2C13FT N2C13 2SC5322 2SC5322 HN2C13FT
RFM70U12D

Abstract: 2SC3136 rfm03u3ct MT3S111 MT3S111P MT3S106 tim4450 RFM70U12 2SK709 TGI8596-50
Text: 2SC5111 2SC5322 2SC5464 MT3S03AS MT3S04AS MT3S06S SSM 0.8 1.6 1.6 fT = 550


Original
PDF SCJ0004N 2SC2714 2SC2715 2SC2716 2SC3123 2SC5064 2SC5084 2SC5089 2SC5094 2SC5106 RFM70U12D 2SC3136 rfm03u3ct MT3S111 MT3S111P MT3S106 tim4450 RFM70U12 2SK709 TGI8596-50
2SC5321

Abstract: No abstract text available
Text: TOSHIBA 2SC5321 TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5321 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS (CHIP : fT= 16GHz series) • Low Noise Figure • High Gain NF = 1.4dB (f = 2GHz) |S2le|2 = 10dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) MARKING 3 M U "ET 1 "ET 2 Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 8 V Collector-Emitter Voltage VCEO 5 V Emitter-Base Voltage Vebo 1.5 V Collector Current ic 10 mA Base Current IB 5


OCR Scan
PDF 2SC5321 16GHz SC-70 006igns, 2SC5321
2SC5322

Abstract: No abstract text available
Text: TOSHIBA 2SC5322 TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 3 2 2 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS (CHIP : fT= 16GHz series) • Low Noise Figure : NF = 1.4dB (f=2GHz) • High Gain : Ga = 10dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage vCBO 8 V Collector-Emitter Voltage VCEO 5 V , 2SC5322 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX


OCR Scan
PDF 2SC5322 16GHz 2SC5322
marking IAY

Abstract: 2SC5324
Text: TOSHIBA 2SC5324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 3 2 4 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.4dB (f = 2GHz) • High Gain : |S2le|2 = 12dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 8 V Collector-Emitter Voltage vCEO 5 V Emitter-Base Voltage vEBO 1.5 V Collector Current ic 10 mA Base Current IB 5 mA Collector Power Dissipation PC 100 mW Junction Temperature Tj 125


OCR Scan
PDF 2SC5324 marking IAY 2SC5324
2SC5322

Abstract: HN3C18FT
Text: TOSHIBA HN3C18FT TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C18FT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini (6pins) package : TU6 MOUNTED DEVICES Q1/Q2 Three-pins (SSM) mold products are corresponded 2SC5322 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 8 V Collector-Emitter Voltage VCEO 5 V Emitter-Base Voltage Vebo 1.5 V Collector Current ic 10


OCR Scan
PDF HN3C18FT 2SC5322 2000MHz 2SC5322 HN3C18FT
IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Text: No file text available


Original
PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Not Available

Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5320 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS (CHIP : fT = 16GHz series) 2SC5320 Unit in mm + 0.5 Low Noise Figure :NF = 1.4dB (f=2GHz) High Gain : |S2l e|2= lOdB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range MARKING 3 SYMBOL


OCR Scan
PDF 2SC5320 16GHz
Not Available

Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 2SC5323 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS 2SC5323 2 .9 -0 .3 + 0.2 Unit in mm -e · · Low Noise Figure High Gain :NF = 1.4dB (f=2GHz) : Ga = 12dB (f = 2GHz) SYMBOL VCBO VCEO Ve b o ic MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage


OCR Scan
PDF 2SC5323
Supplyframe Tracking Pixel