The Datasheet Archive

2SC5261 datasheet (12)

Part ECAD Model Manufacturer Description Type PDF
2SC5261 2SC5261 ECAD Model Others NPN Transistor Scan PDF
2SC5261 2SC5261 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SC5261 2SC5261 ECAD Model Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
2SC5261 2SC5261 ECAD Model Toshiba NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) Scan PDF
2SC5261F 2SC5261F ECAD Model Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
2SC5261F-O 2SC5261F-O ECAD Model Toshiba TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF
2SC5261F-R 2SC5261F-R ECAD Model Toshiba TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF
2SC5261FT 2SC5261FT ECAD Model Others NPN Transistor Scan PDF
2SC5261FT 2SC5261FT ECAD Model Toshiba NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) Scan PDF
2SC5261FT 2SC5261FT ECAD Model Toshiba TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF
2SC5261-O 2SC5261-O ECAD Model Toshiba TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF
2SC5261-R 2SC5261-R ECAD Model Toshiba TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF

2SC5261 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2SC5261

Abstract: No abstract text available
Text: TOSHIBA 2SC5261 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 2 6 1 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.7dB (f=2GHz) • High Gain : Gain = 8.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base , 2SC5261 hpE - IC Cob, Cre - Vqb VCE=5V Ta = 25 , 1 3 5 10 30 50 100 COLLECTOR CURRENT Iq (mA) 1997-08-30 2/3 TOSHIBA 2SC5261 10 I S2le 12 - VCE


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PDF 2SC5261 2SC5261
2SC5261

Abstract: No abstract text available
Text: TOSHIBA 2SC5261 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5261 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.7dB (f=2GHz) • High Gain : Gain = , by 3 terminal method with capacitance bridge. 1 2001-05-31 TOSHIBA 2SC5261 hFE - IC Cob, Cre - , 1 3 5 10 30 50 100 COLLECTOR CURRENT Iq (mA) 2 2001-05-31 TOSHIBA 2SC5261 10 S2lel2 - VCE < , 2SC5261 RESTRICTIONS ON PRODUCT USE _000707E • TOSHIBA is continually working to improve the quality


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PDF 2SC5261 2SC5261
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR 2SC5261 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS 2SC5261 SYMBOL VCBO VCEO Ve b o ic :B PC Tj Tstg RATING 15 7 1.5 15 7 100 125 -5 5 -1 2 5 SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm · · Low Noise Figure High Gain : NF = 1.7dB (f=2GHz) : Gain = , r > Q H CO Ox O çr o ^ _ O H o CO < dd n< 03 < 2SC5261 TO SHIBA 2SC5261 10 I S21e 12 - VCE PC - Ta - Z < o o H Bi H 6 z 4 2 l 0 = 2OmA


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PDF 2SC5261 S21el
Not Available

Abstract: No abstract text available
Text: T O S H IB A 2SC5261 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5261 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB (f=2GHz) : Gain = 8.5dB (f = 2GHz) M A X IM U M RATINGS (Ta = 25°C) SYMBOL VCBO VCEO Ve b o ic !b PC Tj CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage , 33 m Z H y H I O 3 > 2SC5261 T O S H IB A 10 ^ 2SC5261 I S21e 12 -


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PDF 2SC5261
2000 - 2SK3075 equivalent

Abstract: 10 ghz transistor MT3S04T 2SK3078 MT6P06E 3SK320 transistor 2SC5066 MT6P03AE 2SC5066 24lu1
Text: 2SC5261 TESM USQ 2SC5256FT 2SC5261FT ESC 2SC5258 2SC5263 2SC5317 2SC5317FT 2SC5322 , up MIX TA4103F VCO 2SC5260 2SC5316 2SC5321 2SC5261 2SC5317 2SC5322 2SC5261FT , 2SC5258 R/O fT = 12 GHz low-current device 2SC5259 2SC5260 2SC5261 2SC5261FT 2SC5262 , 2SC5256FT 2SC5257 2SC5258 2SC5259 2SC5260 2SC5261 2SC5261FT 2SC5262 2SC5263 MT3S07U MT3S07S , 1 GHz 2 GHz 2 GHz(VCE = 3 V) 2 GHz(VCE = 1 V) 2SC5256 2SC5261 MT3S07T 100 10


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PDF 2SC5065 2SC5085 2SC5090 2SC5095 MT3S06U MT3S07U 2SC5066 2SC5086 2SC5091 2SC5096 2SK3075 equivalent 10 ghz transistor MT3S04T 2SK3078 MT6P06E 3SK320 transistor 2SC5066 MT6P03AE 2SC5066 24lu1
2SC5261

Abstract: ma706
Text: TOSHIBA 2SC5261 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 2 6 1 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.7dB (f=2GHz) • High Gain : Gain = 8.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base , others. # The information contained herein is subject to change without notice. 705 TOSHIBA 2SC5261 , 1 3 5 10 30 50 100 COLLECTOR CURRENT Iq (mA) 706 TOSHIBA 2SC5261 10 I S2le 12 - VCE <« 6


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PDF 2SC5261 2SC5261 ma706
2SC5261

Abstract: HN3C16FT
Text: TOSHIBA HN3C16FT TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C16FT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini (6pins) package : TU6 MOUNTED DEVICES Q1/Q2 Three-pins (SSM) mold products are corresponded 2SC5261 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 15 V Collector-Emitter Voltage VCEO 7 V Emitter-Base Voltage Vebo 1.5 V Collector Current ic 15


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PDF HN3C16FT 2SC5261 2000MHz 2SC5261 HN3C16FT
Not Available

Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN2C14FT HN7T1ZLFT m' m V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm 2.1 ± 0.1 · TWO devices are built in to the super-thin and ultra super mini (6pins) package : TU6 `3 1.25 ±0.1 -1 MOUNTED DEVICES (Nl Q1/ Q2 Three-pins (SSM) mold products are corresponded M A X IM U M RATINGS (Ta = 25°C) A ° 2SC5261 J SYMBOL VCBO VCEO Ve b o ic lB CHARACTERISTIC


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PDF HN2C14FT 2SC5261 1000MHz 2000MHz 2000MHz
2SC5261

Abstract: HN2C14FT C2PP
Text: TOSHIBA HN2C14FT TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN2C14FT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini (6pins) package : TU6 MOUNTED DEVICES Q1/Q2 Three-pins (SSM) mold products are corresponded 2SC5261 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 15 V Collector-Emitter Voltage VCEO 7 V Emitter-Base Voltage Vebo 1.5 V Collector Current ic 15


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PDF HN2C14FT 2SC5261 1000MHz 2000MHz 2000MHz 2SC5261 HN2C14FT C2PP
2SC5261

Abstract: HN2C14FT
Text: TOSHIBA HN2C14FT TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN2C14FT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini (6pins) package : TU6 MOUNTED DEVICES Q1/Q2 Three-pins (SSM) mold products are corresponded 2SC5261 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 15 V Collector-Emitter Voltage VCEO 7 V Emitter-Base Voltage VEBO 1.5 V Collector Current ic 15


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PDF HN2C14FT 2SC5261 2SC5261 HN2C14FT
2SC5261

Abstract: HN3C16FT
Text: TOSHIBA HN3C16FT TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C16FT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini (6pins) package : TU6 MOUNTED DEVICES Q1/Q2 Three-pins (SSM) mold products are corresponded 2SC5261 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 15 V Collector-Emitter Voltage VCEO 7 V Emitter-Base Voltage VEBO 1.5 V Collector Current ic 15


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PDF HN3C16FT 2SC5261 2SC5261 HN3C16FT
Not Available

Abstract: No abstract text available
Text: TO SHIBA TENTATIVE HN3C16FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N î f 1 f i FT ■■u m MF ■■Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • 2.1 ± 0.1 TWO devices are built in to the super-thin and ultra super mini (6pins) package : TU6 IJ5ÎU.1 MOUNTED DEVICES Q1/Q2 Three-pins (SSM) mold products are corresponded 2SC5261 i M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage


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PDF HN3C16FT 2SC5261 2000MHz
Not Available

Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C16FT HN9C16FT V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS Unit in mm · TWO devices are built in to the super-thin and ultra super mini (6pins) package : TU6 M O U N T E D DEVICES Three-pins (SSM) mold products are corresponded. M A X IM U M RATINGS (Ta = 25°C) Q1 Q2 2SC5091 2SC5261 Q1 20 8 1.5 40 20 Q2 15 7 1.5 15 20 UNIT V V V mA mA mW °C °C SYMBOL CHARACTERISTIC Collector-Base


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PDF HN9C16FT 2SC5091 2SC5261 1000MHz 2000MHz
Not Available

Abstract: No abstract text available
Text: TO SHIBA TENTATIVE TOSHIBA TRANSISTOR HN9C16FT HNQfUFT u m SILICON NPN EPITAXIAL PLANAR TYPE V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm 2.1 ±0.1 · TWO devices are built in to the super-thin and ultra super mini (6pins) package : TU6 1.25 ± 0 -1 MOUNTED DEVICES 5 Three-pins (SSM) mold products are corresponded. M A X IM U M RATINGS (Ta = 25°C) Q1 Q2 ¿ -n. r U - 2SC5091 2SC5261 Q1 20 8 1.5 40 20 Q2 15 7 1.5 15 20 UNIT V V V mA mA


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PDF HN9C16FT 2SC5091 2SC5261 1000MHz 2000MHz
Not Available

Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C13FT HNQT1 3 FT u m M F V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm · TWO devices are built in to the super-thin and ultra super mini (6pins) package : TU6 2.1 ±0.1 1.25 ± 0 -1 MOUNTED DEVICES 5 Q1 Three-pins (SSM) mold products are corresponded. M A X IM U M RATINGS (Ta = 25°C) Q2 2SC5066 ¿ -n. r 2SC5261 s . U - J Q1 15 7 1.5 15 7 200 125 -5 5 -1 2 5 Q2 20 12


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PDF HN9C13FT 2SC5066 2SC5261 2000MHz 500MHz 1000MHz 1000MHz
2SC5261

Abstract: 2SC5464
Text: TOSHIBA HN9C21 FT TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N9C21FT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini (6pins) package : TU6 MOUNTED DEVICES Q1 Q2 Three-pins (SSM) mold products are corresponded. 2SC5261 2SC5464 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL Q1 Q2 UNIT Collector-Base Voltage VCBO 15 20 V Collector-Emitter Voltage VCEO 7 12 V Emitter-Base Voltage VEBO 1.5 3 V


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PDF HN9C21 N9C21FT 2SC5261 2SC5464 2SC5464
HN3C16

Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C16FT HN3C16FT V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 ± 0 .1 · TWO devices are built in to the super-thin and ultra super mini (6pins) package : TU6 1.25 ± 0.1 -1 M O U N T E D DEVICES `3 (N l Q1/ Q2 Three-pins (SSM) mold products are corresponded M A X IM U M RATINGS (Ta = 25°C) A ° 2SC5261 J SYMBOL VCBO VCEO Ve b o ic lB CHARACTERISTIC


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PDF HN3C16FT 2SC5261 2000MHz S21el2 HN3C16
65ZB

Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TOSHIBA TRANSISTOR HN9C05FT H M Q f Í 1RFT V MT SILICON NPN EPITAXIAL PLANAR TYPE V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm 2.1 ±0.1 TWO devices are built in to the super-thin and ultra super mini ^ f i m '- n o i ^ na < - » lr a c rc * /u v u u g v « · T ^ T T fi X w 1.25 ± 0 -1 MOUNTED DEVICES Three-pins (SSM) mold products are corresponded. M A X IM U M RATINGS (Ta = 25°C) Q1 Q2 ¿ -n. 5 -Ï 2SC5261 2SC5091


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PDF HN9C05FT 2SC5261 2SC5091 1000MHz 2000MHz 65ZB
2SC5086

Abstract: 2SC5261 HN9C10FT
Text: TOSHIBA HN9C10FT TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N9C1OFT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini (6pins) package : TU6 MOUNTED DEVICES Q1 Q2 Three-pins (SSM) mold products are corresponded. 2SC5261 2SC5086 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL Q1 Q2 UNIT Collector-Base Voltage VCBO 15 20 V Collector-Emitter Voltage vCEO 7 12 V Emitter-Base Voltage vEBO 1.5 3 V


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PDF HN9C10FT 2SC5261 2SC5086 2SC5086 HN9C10FT
Not Available

Abstract: No abstract text available
Text: TOSHIBA HN9C05FT TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C05FT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS TWO devices are built in to the super-thin and ultra super mini noAo™ • TT TR MOUNTED DEVICES Unit in mm Q1 q2 Three-pins (ssm) mold products are corresponded. 2sc5261 2sc5091 MAXIMUM RATINGS (Ta = 25°C) characteristic symbol Q1 q2 unit Collector-Base Voltage vcbo 15 20 V Collector-Emitter Voltage VCEO 7 8 V Emitter-Base Voltage Vebo 1.5 1.5 V Colleetor Current


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PDF HN9C05FT 2sc5261 2sc5091 IS21e12
Not Available

Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C21 FT HN9C21FT V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS Unit in mm · TWO devices are built in to the super-thin and ultra super mini (6pins) package : TU6 Q1 Q2 M O U N T E D DEVICES Three-pins (SSM) mold products are corresponded. M A X IM U M RATINGS (Ta = 25°C) 2SC5261 2SC5464 Q1 15 7 1.5 15 7 Q2 20 12 3 60 30 UNIT V V V mA mA mW °C °C SYMBOL CHARACTERISTIC Collector-Base Voltage


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PDF HN9C21 HN9C21FT 2SC5261 2SC5464 1000MHz 2000MHz CB--10V, --15mA,
2SC5091

Abstract: 2SC5261 HN9C05FT
Text: TOSHIBA HN9C05FT TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C05FT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini (6pins) package : TU6 MOUNTED DEVICES Unit in mm Q1 Q2 Three-pins (SSM) mold products are corresponded. 2SC5261 2SC5091 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL Q1 Q2 UNIT Collector-Base Voltage VCBO 15 20 V Collector-Emitter Voltage VCEO 7 8 V Emitter-Base Voltage


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PDF HN9C05FT 2SC5261 2SC5091 IS21e12 2SC5091 HN9C05FT
2SC5091

Abstract: 2SC5261 HN9C16FT
Text: TOSHIBA HN9C16FT TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C16FT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini (6pins) package : TU6 MOUNTED DEVICES Q1 Q2 Three-pins (SSM) mold products are corresponded. 2SC5091 2SC5261 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL Q1 Q2 UNIT Collector-Base Voltage vCBO 20 15 V Collector-Emitter Voltage vCEO 8 7 V Emitter-Base Voltage VEBO 1.5 1.5 V


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PDF HN9C16FT 2SC5091 2SC5261 2SC5261 HN9C16FT
transistor y1 toshiba

Abstract: 2SC5091 2SC5261 HN9C05FT
Text: TOSHIBA HN9C05FT TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N9C05FT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini (6pins) package : TU6 MOUNTED DEVICES Q1 Q2 Three-pins (SSM) mold products are corresponded. 2SC5261 2SC5091 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL Q1 Q2 UNIT Collector-Base Voltage VCBO 15 20 V Collector-Emitter Voltage VCEO 7 8 V Emitter-Base Voltage Vebo 1.5 1.5 V


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PDF HN9C05FT N9C05FT 2SC5261 2SC5091 transistor y1 toshiba 2SC5091 HN9C05FT
Not Available

Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C10FT HN9C1OFT V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS Unit in mm · TWO devices are built in to the super-thin and ultra super mini (6pins) package : TU6 M O U N T E D DEVICES Three-pins (SSM) mold products are corresponded. M A X IM U M RATINGS (Ta = 25°C) Q1 Q2 2SC5261 2SC5086 Q1 15 7 1.5 15 7 Q2 20 12 3 80 40 UNIT V V V mA mA mW °C °C SYMBOL CHARACTERISTIC Collector-Base


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PDF HN9C10FT 2SC5261 2SC5086 2000MHz 1000MHz CB--10V, --10V, 500MHz
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