The Datasheet Archive

2SC5257 datasheet (6)

Part ECAD Model Manufacturer Description Type PDF
2SC5257 2SC5257 ECAD Model Others NPN Transistor Scan PDF
2SC5257 2SC5257 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SC5257 2SC5257 ECAD Model Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
2SC5257 2SC5257 ECAD Model Toshiba Silicon NPN epitaxial planar type transistor for VHF-UHF band low noise amplifier applications Scan PDF
2SC5257-O 2SC5257-O ECAD Model Toshiba TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF
2SC5257-R 2SC5257-R ECAD Model Toshiba TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF

2SC5257 Datasheets Context Search

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2SC5257

Abstract: No abstract text available
Text: TOSHIBA 2SC5257 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5257 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure • High Gain : NF = 1.5dB (f = 2GHz) : Gain = lOdB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) MARKING 1 Type Name hEE Rank H R^I 0~O 3 4 , , f=lGHz — 1.1 dB NF (2) VCE = 5V, Iq = 5mA, f=2GHz — 1.5 3 1 2001-12-10 TOSHIBA 2SC5257 , capacitance bridge. 2 2001-12-10 TOSHIBA 2SC5257 RESTRICTIONS ON PRODUCT USE _000707E • TOSHIBA is


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PDF 2SC5257 2SC5257
Not Available

Abstract: No abstract text available
Text: TOSHIBA 2SC5257 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5257 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS + 0.2 2.9-0.3 • • : NF = 1.5dB(f=2GHz) : Gain = lOdB (f = 2GHz) Low Noise Figure High Gain ■fu— — -H 1 1 2 M A X IM U M RATINGS (Ta = 25°C) SYMBOL v CBO v CEO Ve b o ic !b PC Tj , change without notice. 1997- 08-30 1/2 TOSHIBA 2SC5257 ELECTRICAL CHARACTERISTICS (Ta =


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PDF 2SC5257
2SC5257

Abstract: No abstract text available
Text: TOSHIBA 2SC5257 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5257 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure • High Gain : NF = 1.5dB (f = 2GHz) : Gain = lOdB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) MARKING 1 Type Name hEE Rank H R^I 0~O 3 4 Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 15 V Collector-Emitter , /2 TOSHIBA 2SC5257 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION


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PDF 2SC5257 2SC5257
2SC5257

Abstract: No abstract text available
Text: TOSHIBA 2SC5257 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5257 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure • High Gain : NF = 1.5dB (f = 2GHz) : Gain = lOdB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) MARKING 2 1 Type Name floT hEE Rank ÏÏ 3 H R^I Ü 4 Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 15 V , others. • The information contained herein is subject to change without notice. 695 TOSHIBA 2SC5257


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PDF 2SC5257 2SC5257
2SC5257

Abstract: No abstract text available
Text: TOSHIBA 2SC5257 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5257 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure • High Gain : NF = 1.5dB (f = 2GHz) : Gain = lOdB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) MARKING 2 1 Type Name floT hEE Rank ÏÏ 3 H R^I Ü 4 Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 15 V Collector-Emitter Voltage vCEO 7 V , contained herein is subject to change without notice. 1997-08-30 1/2 TOSHIBA 2SC5257 ELECTRICAL


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PDF 2SC5257
Not Available

Abstract: No abstract text available
Text: TO SH IBA 2SC5257 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5257 VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.5dB (f = 2GHz) • High Gain : Gain = lOdB (f = 2GHz) m a v ì m i im RATiM r;« ; SYMBOL CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base Voltage Collector Current Base Current , - 1/2 TO SH IBA 2SC5257 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC


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PDF 2SC5257
Not Available

Abstract: No abstract text available
Text: TOSHIBA TO SHIBA TRANSISTOR 2SC5257 i <;r MT SILICON NPN EPITAXIAL PLANAR TYPE V sis7 M V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS Low Noise Figure H igh Gain : N F = 1.5dB (f=2G H z) : Gain = lOdB (f = 2GHz) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage v w n ^ v uui v u j. SYM BOL VCBO T U&U V e BO RATING 15 7 1.5 40 20 150 i f ir t , 1997 - 08-30 1/2 TOSHIBA 2SC5257 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC


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PDF 2SC5257
2000 - 2SK3075 equivalent

Abstract: 10 ghz transistor MT3S04T 2SK3078 MT6P06E 3SK320 transistor 2SC5066 MT6P03AE 2SC5066 24lu1
Text: /Y fT = 12 GHz high-current device 2SC5254 2SC5255 2SC5256 2SC5256FT 2SC5257 , 2SC5256FT 2SC5257 2SC5258 2SC5259 2SC5260 2SC5261 2SC5261FT 2SC5262 2SC5263 MT3S07U MT3S07S , 2SC5261FT MT3S07T 2SC5317FT 2SC5322FT SMQ 2SC5257 2SC5262 MT4S07 2SC5318 2SC5323


Original
PDF 2SC5065 2SC5085 2SC5090 2SC5095 MT3S06U MT3S07U 2SC5066 2SC5086 2SC5091 2SC5096 2SK3075 equivalent 10 ghz transistor MT3S04T 2SK3078 MT6P06E 3SK320 transistor 2SC5066 MT6P03AE 2SC5066 24lu1
2sc5088 horizontal transistors

Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
Text: 2SC5066FT TESM - 2SC5256FT TESM 7 0.04 For RF - 28 2SC5257 SMQ 7 0.04


Original
PDF BCE0016A 3501C-0109 F-93561, 2sc5088 horizontal transistors equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
2SC144

Abstract: 2SD466 2sc5266
Text: No file text available


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PDF T258-OMI FAX06 2SC144 2SD466 2sc5266
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