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ON Semiconductor
2SC5242OTU Trans GP BJT NPN 250V 17A 3-Pin(3+Tab) TO-3P Tube (Alt: 2SC5242OTU) 2SC5242OTU ECAD Model
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Avnet (3) 2SC5242OTU Tube 850 4 Weeks, 2 Days 1 €1.306 €1.20152 €1.00562 €0.94032 €0.94032 Buy Now
2SC5242OTU Bulk 0 1 Weeks 200 - - - - - Get Quote
2SC5242OTU Tube 0 4 Weeks 450 - - - $1.46285 $1.39061 Buy Now
Newark element14 2SC5242OTU Bulk 215 1 $2.88 $2.48 $2.04 $1.74 $1.41 Buy Now
element14 Asia-Pacific 2SC5242OTU 215 1 $3.84 $3.26 $2.61 $1.9 $1.7 Buy Now
Farnell element14 2SC5242OTU 234 1 £2.09 £1.77 £1.41 £1.41 £1.41 Buy Now
ON Semiconductor
2SC5242RTU Trans GP BJT NPN 250V 17A 3-Pin(3+Tab) TO-3P Tube - Bulk (Alt: 2SC5242RTU) 2SC5242RTU ECAD Model
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Avnet 2SC5242RTU Bulk 0 1 Weeks 200 - - - - - Get Quote
Fairchild Semiconductor Corporation
2SC5242RTU Power Bipolar Transistor, 17A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin 2SC5242RTU ECAD Model
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Rochester Electronics 2SC5242RTU 48 1 $2.02 $2.02 $1.8 $1.64 $1.64 Buy Now
ON SEMICONDUCTOR
2SC5242OTU 2SC5242OTU ECAD Model
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New Advantage Corporation 2SC5242OTU 620 620 - - - $1.35 $1.35 Buy Now

2SC5242 datasheet (15)

Part ECAD Model Manufacturer Description Type PDF
2SC5242 2SC5242 ECAD Model Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
2SC5242 2SC5242 ECAD Model Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-3P(N); Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: High Frequency Switching Power Transistor; Application Scope: output(80W); Part Number: 2SA1962 Original PDF
2SC5242 2SC5242 ECAD Model Others Silicon NPN Transistor Scan PDF
2SC5242 2SC5242 ECAD Model Others Scan PDF
2SC5242 2SC5242 ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SC5242 2SC5242 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SC5242 2SC5242 ECAD Model Toshiba Silicon NPN transistor for power amplifier applications. Recommended for 80W high fidelity audio frequency amplifier output stage Scan PDF
2SC5242 2SC5242 ECAD Model Toshiba TRANSISTOR SILICON NPN TRIPLE DUFFUSED TYPE Scan PDF
2SC5242-O 2SC5242-O ECAD Model Toshiba 2SC5242 - TRANSISTOR 15 A, 230 V, NPN, Si, POWER TRANSISTOR, 2-16C1A, 3 PIN, BIP General Purpose Power Original PDF
2SC5242-O(Q) 2SC5242-O(Q) ECAD Model Toshiba 2SC5242 - Trans GP BJT NPN 230V 15A 3-Pin(3+Tab) TO-3PN Original PDF
2SC5242-O(Q,T) 2SC5242-O(Q,T) ECAD Model Toshiba 2SC5242 - TRANS NPN 230V 15A 2-16C1A Original PDF
2SC5242OTU 2SC5242OTU ECAD Model Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
2SC5242-R 2SC5242-R ECAD Model Toshiba 2SC5242 - TRANSISTOR 15 A, 230 V, NPN, Si, POWER TRANSISTOR, 2-16C1A, 3 PIN, BIP General Purpose Power Original PDF
2SC5242-R(Q) 2SC5242-R(Q) ECAD Model Toshiba 2SC5242 - Bipolar Transistors Transistor NPN 230V 15A Original PDF
2SC5242RTU 2SC5242RTU ECAD Model Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF

2SC5242 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2009 - j4313-o

Abstract: c5242 2SC5242* datasheet NPN Transistor 2sc5242 J4313O c5242o 2sc5200 amplifier 2sc5200 amplifier circuit J4313 FJA4313
Text: 2SC5242 /FJA4313 NPN Epitaxial Silicon Transistor Applications · High-Fidelity Audio Output , Fairchild Semiconductor Corporation 2SC5242 /FJA4313 Rev. C www.fairchildsemi.com 1 2SC5242 /FJA4313 , % Ordering Information Part Number Marking Package Packing Method 2SC5242RTU C5242R TO-3P TUBE hFE1 R grade 2SC5242OTU C5242O TO-3P TUBE hFE1 O grade FJA4313RTU J4313R , Fairchild Semiconductor Corporation 2SC5242 /FJA4313 Rev. C Remarks www.fairchildsemi.com 2


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PDF 2SC5242/FJA4313 130watts 30MHz. 2SA1962/FJA4213. --TO264 2SC5200/FJL4315 --TO220 FJP5200 --TO220F FJPF5200 j4313-o c5242 2SC5242* datasheet NPN Transistor 2sc5242 J4313O c5242o 2sc5200 amplifier 2sc5200 amplifier circuit J4313 FJA4313
2008 - j4313-o

Abstract: j4313-r transistor 2sc5242 2SC5242 J4313 FJA4313
Text: : Pulse Width=20µs, Duty Cycle2% Ordering Information Part Number 2SC5242RTU 2SC5242OTU FJA4313RTU , 2SC5242 /FJA4313 - NPN Epitaxial Silicon Transistor January 2008 2SC5242 /FJA4313 NPN , 55 ~ 110 O 80 ~ 160 © 2008 Fairchild Semiconductor Corporation 2SC5242 /FJA4313 Rev. A1 1 www.fairchildsemi.com 2SC5242 /FJA4313 - NPN Epitaxial Silicon Transistor Electrical Characteristics* T =25°C , Semiconductor Corporation 2SC5242 /FJA4313 Rev. A1 2 www.fairchildsemi.com 2SC5242 /FJA4313 - NPN


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PDF 2SC5242/FJA4313 130watts 30MHz. 2SA1962/FJA4213. --TO264 2SC5200/FJL4315 --TO220 FJP5200 --TO220F j4313-o j4313-r transistor 2sc5242 2SC5242 J4313 FJA4313
2008 - j4313

Abstract: j4313-o c5242 2sc5200 amplifier circuit
Text: : Pulse Width=20µs, Duty Cycle2% Ordering Information Part Number 2SC5242RTU 2SC5242OTU FJA4313RTU , 2SC5242 /FJA4313 - NPN Epitaxial Silicon Transistor March 2008 2SC5242 /FJA4313 NPN Epitaxial , 55 ~ 110 O 80 ~ 160 © 2008 Fairchild Semiconductor Corporation 2SC5242 /FJA4313 Rev. A2 1 www.fairchildsemi.com 2SC5242 /FJA4313 - NPN Epitaxial Silicon Transistor Electrical Characteristics* T =25°C , Semiconductor Corporation 2SC5242 /FJA4313 Rev. A2 2 www.fairchildsemi.com 2SC5242 /FJA4313 - NPN


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PDF 2SC5242/FJA4313 130watts 30MHz. 2SA1962/FJA4213. --TO264 2SC5200/FJL4315 --TO220 FJP5200 --TO220F j4313 j4313-o c5242 2sc5200 amplifier circuit
2009 - j4313-o

Abstract: No abstract text available
Text: Packing Method 2SC5242RTU C5242R TO-3P TUBE hFE1 R grade 2SC5242OTU C5242O TO , 2SC5242 /FJA4313 NPN Epitaxial Silicon Transistor Applications • • High-Fidelity Audio , 80 ~ 160 © 2009 Fairchild Semiconductor Corporation 2SC5242 /FJA4313 Rev. C www.fairchildsemi.com 1 2SC5242 /FJA4313 — NPN Epitaxial Silicon Transistor January 2009 a Symbol , TO-3P TUBE hFE1 O grade © 2009 Fairchild Semiconductor Corporation 2SC5242 /FJA4313 Rev. C


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PDF 2SC5242/FJA4313 130watts 30MHz. to2SA1962/FJA4213. --TO264 2SC5200/FJL4315 --TO220 FJP5200 --TO220F FJPF5200 j4313-o
2006 - C5242 TOSHIBA

Abstract: C5242 transistor c5242 TOSHIBA C5242 Toshiba transistor c5242 2sc5242 transistor
Text: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications Unit: mm · · · High Collector breakdown voltage: VCEO = 230 V (min) Complementary to 2SA1962 , failure rate, etc). 1 2006-11-10 2SC5242 Electrical Characteristics (Tc = 25 , 2 2006-11-10 2SC5242 IC ­ VCE 20 Common emitter Tc = 25°C 20 Common emitter VCE = 5 V , VCE (V) 3 2006-11-10 2SC5242 RESTRICTIONS ON PRODUCT USE · The information contained


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PDF 2SC5242 2SA1962 2-16C1A C5242 TOSHIBA C5242 transistor c5242 TOSHIBA C5242 Toshiba transistor c5242 2sc5242 transistor
2008 - j4313-o

Abstract: J4313 NPN Transistor 2sc5242 c5242o J4313R J4313O c5242 C5242-O 2sc5242 transistor 2SC5242RTU
Text: 2SC5242 /FJA4313 NPN Epitaxial Silicon Transistor Applications · High-Fidelity Audio Output , Fairchild Semiconductor Corporation 2SC5242 /FJA4313 Rev. A3 www.fairchildsemi.com 1 2SC5242 /FJA4313 , % Ordering Information Part Number Marking Package Packing Method 2SC5242RTU C5242R TO-3P TUBE hFE1 R grade 2SC5242OTU C5242O TO-3P TUBE hFE1 O grade FJA4313RTU J4313R , Fairchild Semiconductor Corporation 2SC5242 /FJA4313 Rev. A3 Remarks www.fairchildsemi.com 2


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PDF 2SC5242/FJA4313 130watts 30MHz. 2SA1962/FJA4213. --TO264 2SC5200/FJL4315 --TO220 FJP5200 --TO220F FJPF5200 j4313-o J4313 NPN Transistor 2sc5242 c5242o J4313R J4313O c5242 C5242-O 2sc5242 transistor 2SC5242RTU
2012 - c5242

Abstract: C5242 TOSHIBA transistor c5242 TOSHIBA c5242
Text: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications Unit: mm · · · High Collector breakdown voltage: V CEO = 230 V (min) Complementary to 2SA1962 , report and estimated failure rate, etc). 1 2012-08-31 2SC5242 Electrical Characteristics (Ta = , 2SC5242 IC ­ VCE 20 Common emitter Tc = 25°C 20 Common emitter VCE = 5 V IC ­ VBE (A , voltage VCE (V) 3 2012-08-31 2SC5242 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation


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PDF 2SC5242 2SA1962 2-16C1A c5242 C5242 TOSHIBA transistor c5242 TOSHIBA c5242
2SC5242

Abstract: 2SA1962 230V npn 1A
Text: SavantIC Semiconductor Product Specification 2SC5242 Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SA1962 ·High collector voltage: VCEO=230V(Min , -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC5242 Silicon NPN Power , NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC5242 SavantIC Semiconductor Product Specification 2SC5242 Silicon NPN Power Transistors 4 -


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PDF 2SC5242 2SA1962 2SC5242 2SA1962 230V npn 1A
2004 - Not Available

Abstract: No abstract text available
Text: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications • Unit: mm High Collector breakdown voltage: VCEO = 230 V (min) • Complementary , ) classification Cob R: 55 to 110, O: 80 to 160 1 2004-07-07 2SC5242 Marking TOSHIBA C5242 , or lead (Pb)-free finish. 2 2004-07-07 2SC5242 IC – VCE IC – VBE 20 20 , (V) 3 2004-07-07 2SC5242 RESTRICTIONS ON PRODUCT USE 030619EAA • The information


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PDF 2SC5242 2SA1962
2SC5242

Abstract: 2SA1962 Toshiba 2SC5242
Text: TOSHIBA 2SC5242 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 2 4 2 POWER AMPLIFIER APPLICATIONS • High Collector Breakdown Voltage : Vceo = 230V (Min.) • Complementary to 2SA1962 • Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Tc , : 80-160 1 2001-11-05 TOSHIBA 2SC5242 IC - VCE 20 16 12 0' COMMON EMITTER Tc = 25 , (A) COLLECTOR-EMITTER VOLTAGE VQE (V) 2 2001-11-05 TOSHIBA 2SC5242 RESTRICTIONS ON PRODUCT USE


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PDF 2SC5242 2SA1962 2SC5242 2SA1962 Toshiba 2SC5242
2004 - C5242

Abstract: transistor c5242 C5242 TOSHIBA TOSHIBA C5242 NPN Transistor 2sc5242 Toshiba transistor c5242 2SA1962 2SC5242 2SA1962 TOSHIBA
Text: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications Unit: mm · High Collector breakdown voltage: VCEO = 230 V (min) · Complementary to , ) classification Cob R: 55 to 110, O: 80 to 160 1 2004-07-07 2SC5242 Marking TOSHIBA C5242 , or lead (Pb)-free finish. 2 2004-07-07 2SC5242 IC ­ VCE IC ­ VBE 20 20 16 , 2SC5242 RESTRICTIONS ON PRODUCT USE 030619EAA · The information contained herein is subject to


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PDF 2SC5242 2SA1962 C5242 transistor c5242 C5242 TOSHIBA TOSHIBA C5242 NPN Transistor 2sc5242 Toshiba transistor c5242 2SA1962 2SC5242 2SA1962 TOSHIBA
2007 - C5242 TOSHIBA

Abstract: c5242 TOSHIBA C5242 Toshiba transistor c5242 transistor c5242 toshiba audio power amplifier 2SA1962 2SC5242 NPN Transistor 2sc5242
Text: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications Unit: mm · High Collector breakdown voltage: VCEO = 230 V (min) · Complementary to , report and estimated failure rate, etc). 1 2006-11-10 2SC5242 Electrical Characteristics (Tc , or lead (Pb)-free finish. 2 2006-11-10 2SC5242 IC ­ VCE IC ­ VBE 20 20 16 , 2SC5242 RESTRICTIONS ON PRODUCT USE 20070701-EN · The information contained herein is subject to


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PDF 2SC5242 2SA1962 C5242 TOSHIBA c5242 TOSHIBA C5242 Toshiba transistor c5242 transistor c5242 toshiba audio power amplifier 2SA1962 2SC5242 NPN Transistor 2sc5242
Not Available

Abstract: No abstract text available
Text: 2SC5242 東芝トランジスタ シリコンNPN三重拡散形 2SC5242 ○ 電力増幅用 単位: mm • 高耐圧です。: VCEO = 230 V (最小) • 2SA1962 , 2013-11-01 2SC5242 電気的特性 (Ta = 25°C) é … 目 記 号 測 定 条 件 最å , ®æŒ‡ä»¤ï¼ˆEU 指令 2011/65/EU)」のことです。 2 2013-11-01 2SC5242 IC – VCE IC – VBE , コレクタ·エミッタ間電圧 300 1000 VCE (V) 3 2013-11-01 2SC5242 製品取り扱い上のお願い â


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PDF 2SC5242 2SA1962
2SC5242

Abstract: No abstract text available
Text: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications Unit: mm • High Collector breakdown voltage: V CEO = 230 V (min) â , 1 2012-08-31 2SC5242 Electrical Characteristics (Ta = 25°C) Characteristics Symbol , 2SC5242 IC – VCE IC – VBE 20 20 16 Common emitter VCE = 5 V (A) 800 600 400 , max 100 Collector-emitter voltage 300 VCE 1000 (V) 3 2012-08-31 2SC5242


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PDF 2SC5242 2SA1962 2SC5242
NPN Transistor 2sc5242

Abstract: 2SC5242
Text: T O SH IB A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5242 2SC5242 POWER AMPLIFIER APPLICATIONS 1 5 .9 M A X . Unit in mm 0 3 .2 ± 0.2 · · · High Collector Breakdown Voltage : VCEO = 230V (Min.) Complementary to 2SA1962 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. 2. 0 ± 0.3 MAXIMUM RATINGS (Ta = 25°C) UNIT V V V A A 1. BASE 2. COLLECTOR , n o tic e . # # 1997 02-03 - 1/2 T O SH IB A 2SC5242 IC - VCE < < le - V b e


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PDF 2SC5242 2SA1962 2-16C1A NPN Transistor 2sc5242 2SC5242
2SA1962 TOSHIBA

Abstract: 2SA1962 2SC5242 I25L Toshiba 2SC5242
Text: TOSHIBA 2SC5242 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 2 4 2 POWER AMPLIFIER APPLICATIONS • High Collector Breakdown Voltage : Vç;eO = 230V (Min.) • Complementary to 2SA1962 • Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta , : 80-160 1 2001-05-24 TOSHIBA 2SC5242 IC - VCE 20 16 12 0' COMMON EMITTER Tc = 25 , (A) COLLECTOR-EMITTER VOLTAGE VQE (V) 2 2001-05-24 TOSHIBA 2SC5242 RESTRICTIONS ON PRODUCT USE


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PDF 2SC5242 2SA1962 2SA1962 TOSHIBA 2SA1962 2SC5242 I25L Toshiba 2SC5242
2013 - Not Available

Abstract: No abstract text available
Text: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications Unit: mm • High Collector breakdown voltage: VCEO = 230 V (min) • Complementary , failure rate, etc). Start of commercial production 1994-09 1 2013-11-01 2SC5242 Electrical , equipment. 2 2013-11-01 2SC5242 IC – VCE IC – VBE 20 20 16 Common emitter , 2SC5242 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates


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PDF 2SC5242 2SA1962
NPN Transistor 2sc5242

Abstract: transistor 2sc5242 2SA1962 2SC5242 80W TRANSISTOR AUDIO AMPLIFIER
Text: TOSHIBA_ 2SC5242 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5242 POWER AMPLIFIER APPLICATIONS Unit in mm • High Collector Breakdown Voltage : VgEO = 230V (Min-) • Complementary to 2SA1962 • Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 230 V Collector-Emitter , subject to change without notice. 1997-02-03 1/2 TOSHIBA 2SC5242 IC - VCE 20 16 12 0


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PDF 2SC5242 2SA1962 NPN Transistor 2sc5242 transistor 2sc5242 2SA1962 2SC5242 80W TRANSISTOR AUDIO AMPLIFIER
NPN Transistor 2sc5242

Abstract: transistor 2sc5242 Audio Output Transistor Amplifier 2SC5242 2SC5242* datasheet 2SA1962
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5242 DESCRIPTION ·High Collector Breakdown Voltage: V(BR)CEO= 230V(Min.) ·Good Linearity of hFE ·Complement to Type 2SA1962 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications .cn mi e ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL , Silicon NPN Power Transistor 2SC5242 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified


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PDF 2SC5242 2SA1962 NPN Transistor 2sc5242 transistor 2sc5242 Audio Output Transistor Amplifier 2SC5242 2SC5242* datasheet 2SA1962
Not Available

Abstract: No abstract text available
Text: T O SH IB A 2SC5242 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5242 Unit in mm POWER AMPLIFIER APPLICATIONS 1 5.9 M A X. • High Collector Breakdown Voltage : VCEO = 230V (Min.) • Complementary to 2SA1962 • 03.2 ±0.2 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. 2.0±0.3 MAXIMUM RATINGS (Ta = 25°C) + 0.3 1 .0 - 0.25 , contained herein is subject to change w ith o u t notice. 1997 02-03 - 1/2 T O SH IB A 2SC5242


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PDF 2SC5242 2SA1962
2SC5242

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5242 ? < mm; r POWER AMPLIFIER APPLICATIONS wmr 15.9 MAX. Unit in mm 03.2 ±0.2 · High Collector Breakdown Voltage : V q e O " 23C)V (Min.) · Complementary to 2SA1962 · Recommend for SOW High Fidelity Àudio Frequency Amplifier Output Stage. 2.0 ±0.3 É0 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base , w itho ut notice. 1997 02-03 1/2 - TOSHIBA 2SC5242 lC - VCE IC - V ß E


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PDF 2SC5242 2SA1962 2-16C1A 2SC5242
2SC5242

Abstract: No abstract text available
Text: 2SC5242 POWER AM PLIFIER APPLICATIONS. SILICON NPN TRIPLE DIFFUSED TYPE U nit in mm 15.9MAX. 03.2 ± 0.2 - - · · · High Collector Breakdown Voltage : V c g o = 230V (Min.) Complementary to 2SA1962 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. SYMBOL VCBO VCEO Ib RATING 230 230 5 15 1.5 130 150 -5 5 -1 5 0 UNIT V V V A A W °C M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base


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PDF 2SC5242 2SA1962 2-16C1A 2SC5242
audio output TRANSISTOR PNP

Abstract: 2SA1962 2SC5242
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1962 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -230V(Min) ·Good Linearity of hFE ·Complement to Type 2SC5242 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications .cn mi e ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Emitter Voltage VEBO Emitter-Base Voltage UNIT scs .i w


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PDF 2SA1962 -230V 2SC5242 -230V audio output TRANSISTOR PNP 2SA1962 2SC5242
Audio Output Transistor Amplifier

Abstract: 80w audio 2SA1962 2SC5242
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1962 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -230V(Min) ·Good Linearity of hFE ·Complement to Type 2SC5242 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage


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PDF 2SA1962 -230V 2SC5242 -50mA -230V Audio Output Transistor Amplifier 80w audio 2SA1962 2SC5242
Not Available

Abstract: No abstract text available
Text: Jsiisu <~>£.mi-L.ond.uctoi lA-10ducts., Una. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SA1962 11 DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= -230V(Min) 1 • Good Linearity of hFE ' 3 PIN 1.BASE • Complement to Type 2SC5242 2. COLLECTOR 3.BUIITTER • APPLICATIONS 2 TO-SPf package 3 • Power amplifier applications • Recommend for SOW high


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PDF lA-10ducts. 2SA1962 -230V 2SC5242 -50mA; -230V
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