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2SC5198-O(Q) Trans GP BJT NPN 140V 10A 3-Pin(3+Tab) TO-3PN (Alt: 2SC5198-OQ) 2SC5198-O(Q) ECAD Model
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2SC5198 datasheet (10)

Part ECAD Model Manufacturer Description Type PDF
2SC5198 2SC5198 ECAD Model Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-3P(N); Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: High Frequency Switching Power Transistor; Application Scope: output(70W); Part Number: 2SA1941 Original PDF
2SC5198 2SC5198 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SC5198 2SC5198 ECAD Model Others Scan PDF
2SC5198 2SC5198 ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SC5198 2SC5198 ECAD Model Toshiba Silicon NPN transistor for power amplifier applications. Recommended for 70W high fidelity audio frequency amplifier output stage. Scan PDF
2SC5198 2SC5198 ECAD Model Toshiba TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Scan PDF
2SC5198-O 2SC5198-O ECAD Model Toshiba 2SC5198 - TRANSISTOR 10 A, 140 V, NPN, Si, POWER TRANSISTOR, ROHS COMPLIANT, 2-16C1A, 3 PIN, BIP General Purpose Power Original PDF
2SC5198-OQ 2SC5198-OQ ECAD Model Toshiba 2SC5198 - Trans GP BJT NPN 140V 10A 3-Pin(3+Tab) TO-3PN Original PDF
2SC5198-O(Q,T) 2SC5198-O(Q,T) ECAD Model Toshiba 2SC5198 - TRANSISTOR NPN 140V 10A TO-3 Original PDF
2SC5198-R 2SC5198-R ECAD Model Toshiba 2SC5198 - TRANSISTOR 10 A, 140 V, NPN, Si, POWER TRANSISTOR, ROHS COMPLIANT, 2-16C1A, 3 PIN, BIP General Purpose Power Original PDF

2SC5198 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2011 - 2sc5198

Abstract: No abstract text available
Text: 2SC5198 東芝トランジスタ シリコンNPN三重拡散形 2SC5198 ○ 電力増幅用 単位: mm • 高耐圧です。: VCEO = 140 V (最小) • 2SA1941 , ©åˆ‡ãªä¿¡é ¼æ€§è¨­è¨ˆã‚’お願いします。 製品量産開始時期 1994-06 1 2013-11-01 2SC5198 電気的特性 (Ta = , ® 欧州議会および欧州理事会の指令(EU 指令 2011/65/EU)」のことです。 2 2013-11-01 2SC5198 IC – VCE , コレクタ·エミッタ間電圧 100 300 VCE (V) 3 2013-11-01 2SC5198 製品取り扱い上のお願い â


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PDF 2SC5198 2SA1941 2sc5198
2004 - C5198

Abstract: Toshiba transistor c5198 c5198 transistor 2SC5198 Toshiba transistor 2SC5198 ToshibA C5198 Toshiba 2sc5198 toshiba c5198,003 70w amplifier C5198 transistor equivalent
Text: 2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm · High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SA1941 , ) classification Cob R: 55 to 110, O: 80 to 160 1 2004-07-07 2SC5198 Marking TOSHIBA C5198 , or lead (Pb)-free finish. 2 2004-07-07 2SC5198 IC ­ VCE 10 250 200 IC ­ VBE , 30 Collector-emitter voltage 100 VCE 300 (V) 3 2004-07-07 2SC5198


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PDF 2SC5198 2SA1941 C5198 Toshiba transistor c5198 c5198 transistor 2SC5198 Toshiba transistor 2SC5198 ToshibA C5198 Toshiba 2sc5198 toshiba c5198,003 70w amplifier C5198 transistor equivalent
2003 - C5198

Abstract: toshiba c5198 2SC5198 2SA1941 npn2sc5198 PC100-W 170PF
Text: 2SC5198 NPN 2SC5198 : mm · : VCEO = 140 V () · 2SA1941 · 70 W (Ta = 25°C) · VCBO 140 V · VCEO , 2SC5198 (Ta = 25°C) ICBO , ]]/RoHS [[Pb]] RoHS RoHS) 2003 1 27 EU 2002/95/EC) 2 2010-11-02 2SC5198 IC ­ VCE 10 , 2SC5198 · · · · "" · · · ·


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PDF 2SC5198 2SA1941 2-16C1A C5198 toshiba c5198 2SC5198 2SA1941 npn2sc5198 PC100-W 170PF
2007 - Toshiba transistor c5198

Abstract: C5198 c5198 transistor Toshiba transistor 2SC5198 transistor C5198 toshiba c5198 Amplifier toshiba c5198 transistor Toshiba C5198 70w amplifier 2SC5198
Text: 2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm · High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SA1941 , report and estimated failure rate, etc). 1 2006-11-10 2SC5198 Electrical Characteristics (Tc , or lead (Pb)-free finish. 2 2006-11-10 2SC5198 IC ­ VCE 10 250 200 IC ­ VBE , Collector-emitter voltage 100 300 VCE (V) 3 2006-11-10 2SC5198 RESTRICTIONS ON PRODUCT USE


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PDF 2SC5198 2SA1941 Toshiba transistor c5198 C5198 c5198 transistor Toshiba transistor 2SC5198 transistor C5198 toshiba c5198 Amplifier toshiba c5198 transistor Toshiba C5198 70w amplifier 2SC5198
2SC5198

Abstract: 2SA1941 2SC5198 2sa1941 2SA1941 equivalent
Text: SavantIC Semiconductor Product Specification 2SC5198 Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SA1941 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 , Product Specification 2SC5198 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless , dimensions 3 2SC5198 SavantIC Semiconductor Product Specification 2SC5198 Silicon NPN


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PDF 2SC5198 2SA1941 2SC5198 2SA1941 2SC5198 2sa1941 2SA1941 equivalent
2013 - Toshiba transistor c5198

Abstract: No abstract text available
Text: 2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to , Start of commercial production 1994-06 1 2013-11-01 2SC5198 Electrical Characteristics (Ta , in electrical and electronic equipment. 2 2013-11-01 2SC5198 IC – VCE 10 250 200 , 2013-11-01 2SC5198 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and


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PDF 2SC5198 2SA1941 Toshiba transistor c5198
Toshiba transistor 2SC5198

Abstract: 2SC5198 2SA1941
Text: TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5198 2SC5198 POWER AMPLIFIER APPLICATIONS 1 5.9 MAX. Unit in mm 03.2 ±0.2 · · Complementary to 2SA1941 Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage. SYMBOL v CBO VCEO Ve b o ic :B PC Tj Tstg , TO SH IBA 2SC5198 IC - VCE < o ic - VRE < o 0 COLLECTOR-EMITTER VOLTAGE VCE (V , COLLECTOR-EMITTER VOLTAGE V q e (V) 2 2001 05-24 - TO SH IBA 2SC5198 RESTRICTIONS ON PRODUCT USE


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PDF 2SC5198 2SA1941 2-16C1A Toshiba transistor 2SC5198 2SC5198
2006 - Toshiba transistor c5198

Abstract: C5198 toshiba c5198 Amplifier c5198 transistor ToshibA C5198
Text: 2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm · · · High breakdown voltage: VCEO = 140 V (min) Complementary to 2SA1941 Suitable for , failure rate, etc). 1 2006-11-10 2SC5198 Electrical Characteristics (Tc = 25 , 2 2006-11-10 2SC5198 IC ­ VCE 10 250 200 10 150 100 Common emitter Tc = 25°C 8 IC ­ , 2006-11-10 2SC5198 RESTRICTIONS ON PRODUCT USE · The information contained herein is subject to


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PDF 2SC5198 2SA1941 2-16C1A Toshiba transistor c5198 C5198 toshiba c5198 Amplifier c5198 transistor ToshibA C5198
Toshiba transistor 2SC5198

Abstract: C 5198 2SC5198 2SA1941 audio amplifier 70w transistor Ic 1A
Text: TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5198 2SC5198 POWER AMPLIFIER APPLICATIONS 1 5.9 MAX. Unit in mm 03.2 ±0.2 · · Complementary to 2SA1941 Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage. SYMBOL v CBO VCEO Ve b o ic :B PC Tj Tstg , TO SH IBA 2SC5198 IC - VCE < o ic - VRE < o 0 COLLECTOR-EMITTER VOLTAGE VCE (V , COLLECTOR-EMITTER VOLTAGE V q e (V) 2 2001 11-05 - TO SH IBA 2SC5198 RESTRICTIONS ON PRODUCT USE


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PDF 2SC5198 2SA1941 2-16C1A Toshiba transistor 2SC5198 C 5198 2SC5198 audio amplifier 70w transistor Ic 1A
2SC5198

Abstract: ISC transistor 2SC5198 IC 7585 2sc5198 equivalent 2SA1941 equivalent Audio Output Transistor Amplifier 2SC5198 application notes 2SA1941 NPN POWER TRANSISTOR
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5198 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= 2.0V(Min) @IC= 7A ·Good Linearity of hFE ·Complement to Type 2SA1941 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity , Semiconductor isc Silicon NPN Power Transistor 2SC5198 ELECTRICAL CHARACTERISTICS TC=25 unless , isc Silicon NPN Power Transistor 2SC5198 scs .i w .cn mi e w w isc


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PDF 2SC5198 2SA1941 2SC5198 ISC transistor 2SC5198 IC 7585 2sc5198 equivalent 2SA1941 equivalent Audio Output Transistor Amplifier 2SC5198 application notes 2SA1941 NPN POWER TRANSISTOR
2010 - Toshiba transistor c5198

Abstract: C5198 c5198 sample circuit toshiba c5198 2sa1941 c5198 transistor 2SC5198 2SC5198 application notes toshiba c5198 Amplifier Toshiba transistor 2SC5198
Text: 2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm · High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SA1941 , 2SC5198 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ , electronic equipment. 2 2010-11-02 2SC5198 IC ­ VCE 10 250 200 IC ­ VBE 10 Common , 100 300 VCE (V) 3 2010-11-02 2SC5198 RESTRICTIONS ON PRODUCT USE · Toshiba


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PDF 2SC5198 2SA1941 Toshiba transistor c5198 C5198 c5198 sample circuit toshiba c5198 2sa1941 c5198 transistor 2SC5198 2SC5198 application notes toshiba c5198 Amplifier Toshiba transistor 2SC5198
2SC5198

Abstract: Toshiba transistor 2SC5198 2SA1941 5A 09 Toshiba transistor 2SA1941 2SC5198 2sa1941
Text: TO SHIBA TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5198 2SC5198 POWER AMPLIFIER APPLICATIONS 1 5.9 MAX. '- Unit in mm 03.2 ± 0 .2 · · Complementary to 2SA1941 Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage. SYMBOL v CBO VCEO RATING 140 140 5 10 1 100 150 -5 5 -1 5 0 2 ,0± 0.3 + 0.3 1 .0 -0 .2 5 % M A X IM U M RATINGS (Ta = 25 , subject to change w ith o u t notice. 0 0 1997 - 02-03 1/2 TO SH IBA 2SC5198 IC - VCE


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PDF 2SC5198 2SA1941 2-16G1A 2SC5198 Toshiba transistor 2SC5198 5A 09 Toshiba transistor 2SA1941 2SC5198 2sa1941
2SC3303

Abstract: 2SA1941 amp circuit 2sa1387 amplifier design tta1943 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier circuit using 2sa1943 and 2sc5200 2sb834 smd transistor h2a 2SA114 TO3P package
Text: 2SC6076 (@) ( ) ( ) ( ) ( ) 2SA1941 2SC5198 ( ) 2SA1942 TTA0001 TTA0002 2SC5199 TTC0001 TTC0002 TPCP8501 , ) 2SB863 Package 2SC5198 2SA1941 2SC5199 2SA1942 2SC5242 2SA1962 TTC0001 TTA0001 2SC5358 2SA1986 , 2SA1201 QTTA004B QTTA006B 2SC5198 2SC5199 2SC5242 2SC5358 2SC5200N 2SA1941 2SA1942 2SA1962 2SA1986 , ) (V) 0.7 0.8 0.8 0.8 0.9 0.8 0.4 30 30 30 30 30 30/25 ­ 5 5 5 5 5 5 ­ 2SC5198 2SC5242 2SC5358 , 2SA2121 2SA2142 2SA2184 2SA2206 2SB906 2SC2881 2SC3076 2SC3303 2SC5198 2SC5199 2SC5200 2SC5242 2SC5354


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PDF BCE0016F 2SC3303 2SA1941 amp circuit 2sa1387 amplifier design tta1943 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier circuit using 2sa1943 and 2sc5200 2sb834 smd transistor h2a 2SA114 TO3P package
2SC5198

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR 2 S C 2SC5198 SILICON NPN TRIPLE DIFFUSED TYPE 5 1 9 8 POWER AMPLIFIER APPLICATIONS 15.9 M A X . Unit in mm 03.2 ± 0.2 Complementary to 2SA1941 Recommend for 70W High Fidelity Audio Frequency Amplifier O n fc rm t S fa c rp É0 MAXIMUM RATINGS (Ta = 25°C) 2.0±0.3 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector , subject to change without notice. 1997-02-03 1/2 TOSHIBA 2SC5198 lC - VCE IC -


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PDF 2SC5198 2SA1941 2SC5198
2012 - Not Available

Abstract: No abstract text available
Text: Reliability Tests Report Product Name: 2SC5198 Package Name: TO-3P(N) 1. Thermal tests Test Item Heat resistance (Flow) Heat resistance (Iron) Temperature cycling - Test Condition Peak : 260 deg.C Immersion time : 10 s (Up to 1.5mm from the Root shall be immersed) Once , Failure Rate Product Name Estimated failure rate 2SC5198 0.20 Fit or less Above estimated , Rights Reserved. Heat-resistant Mounting Conditions Product Name: Package Name: 2SC5198 TO


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PDF 2SC5198
transistor 2SB618

Abstract: 3A/fllnm 80
Text: 2SC5196 NPN 2SA1941 PNP 2SC5198 NPN 2SA1943 PNP 2SC5200 NPN 2SB647 PNP , 2SA1941 PNP 2SC5198 NPN 2SB647 10 2SB673 180 15 MT200 200 17 10


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PDF 2SA733 2SJ74 2SK170 2SJ76 2SK213 2SJ77 2SK214 2SJ103 2SK246 2SJ109 transistor 2SB618 3A/fllnm 80
Not Available

Abstract: No abstract text available
Text: TO SHIBA 2SC5198 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 1 98 Unit in mm POWER AMPLIFIER APPLICATIONS 1 5.9 M A X ^ . • • 03.2 ± 0 .2 Complementary to 2SA1941 Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS (Ta = 25°C) UNIT V V V vebo A ic A !b 1. BASE W PC 2. COLLECTOR (H E A T , c t t o c h a n g e w i t h o u t n o tic e . 1997 - 02-03 1/2 TO SHIBA 2SC5198 IC -


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PDF 2SC5198 2SA1941 2-16C1A
2SA1941

Abstract: 2SA1941O 2SC5198
Text: AÜK AOK Semiconductor Product Specification Silicon PNP Power Transistors 2SA1941 DESCRIPTION • With TO-3P(l) package • Complement to type 2SC5198 APPLICATIONS • Power amplifier applications • Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collectorxonnected to mounting base 3 Emitter Absolute maximum ratings(Tc=25iC) SYMBOL PARAMETER CONDITIONS VALUE UNIT VcBO Collector-base voltage Open emitter -140 V VcEO Collector-emitter voltage Open base -140 V Ve


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PDF 2SA1941 2SC5198 100ms 2SA1941O
2SA1941

Abstract: 2SC5198
Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SC5198 U n it in mm PO W ER AMPLIFIER APPLICATIONS. · · Complementary to 2SA1941 Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage. CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO v EBO ic Ib Pc Tj Tstg RATING 140 140 5 10 1 100 150 -5 5 -1 5 0 UNIT V V V A A W °C °C W eight : 4.7g MIN


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PDF 2SC5198 2SA1941 2SC5198
2005 - 2SA1941

Abstract: 2sc5198 2SA1941 equivalent 2SC5198 2sa1941
Text: JMnic Product Specification 2SA1941 Silicon PNP Power Transistors DESCRIPTION With TO-3P(I) package Complement to type 2SC5198 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3P(I) and symbol Absolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT


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PDF 2SA1941 2SC5198 -140V; 2SA1941 2sc5198 2SA1941 equivalent 2SC5198 2sa1941
pc 525

Abstract: 2SA1941
Text: MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# 2SC5198 Features · · · Silicon NPN triple diffused type Complementary to 2SA1941 Recommended for 70W high fidelity frequency amplifier output stage NPN Silicon Power Transistors Maximum Ratings Symbol V CEO V CBO V EBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature


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PDF 2SC5198 2SA1941 pc 525 2SA1941
2SA1941 equivalent

Abstract: 2SA1941 2SA1941 datasheet 2SC5198 Audio Output Transistor Amplifier ISC transistor 2SC5198 transistor 2sa1941
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1941 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)=- 2.0V(Min) @IC=- 7A ·Good Linearity of hFE ·Complement to Type 2SC5198 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter


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PDF 2SA1941 2SC5198 -140V 2SA1941 equivalent 2SA1941 2SA1941 datasheet 2SC5198 Audio Output Transistor Amplifier ISC transistor 2SC5198 transistor 2sa1941
2003 - a1941

Abstract: toshiba a1941 2SA1941 A1941 TOSHIBA 2SA1941 equivalent 2SC5198 pnp 2sa1941
Text: 2SA1941 PNP 2SA1941 : mm · : VCEO = -140 V () · 2SC5198 · 70 W (Ta = 25°C) · VCBO -140 V · VCEO -140 V · VEBO -5 V IC -10 A IB -1 A ( T C = 2 5 PC 100 W Tj 150 °C Tstg -55~150 °C : JEDEC JEITA (//) (/ 2-16C1A ) : 4.7 g () ( ) () 1 2010-11-02


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PDF 2SA1941 2SC5198 2-16C1A a1941 toshiba a1941 2SA1941 A1941 TOSHIBA 2SA1941 equivalent 2SC5198 pnp 2sa1941
2sc5198

Abstract: high fidelity amplifier ic 748 2SA1941
Text: MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# 2SA1941 Features · · · Silicon PNP triple diffused type Complementary to 2SC5198 Recommended for 70W high fidelity audio frequency amplifier output stage PNP Silicon Power Transistors Maximum Ratings Symbol V CEO V CBO V EBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature


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PDF 2SA1941 2SC5198 2sc5198 high fidelity amplifier ic 748 2SA1941
2SA1941

Abstract: 2SA1941 equivalent 2sc5198 2SA1941 datasheet 2SC5198 2sa1941
Text: SavantIC Semiconductor Product Specification 2SA1941 Silicon PNP Power Transistors DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC5198 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3P(I) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT


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PDF 2SA1941 2SC5198 -140V; 2SA1941 2SA1941 equivalent 2sc5198 2SA1941 datasheet 2SC5198 2sa1941
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