The Datasheet Archive

2SC5184 datasheet (5)

Part Manufacturer Description Type PDF
2SC5184 NEC NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION Original PDF
2SC5184 NEC Semiconductor Selection Guide Original PDF
2SC5184 Others Japanese Transistor Cross References (2S) Scan PDF
2SC5184-T1 NEC NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION Original PDF
2SC5184-T2 NEC NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION Original PDF

2SC5184 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1997 - 2SC5184-T2

Abstract: 2SC5184 2SC5184-T1
Text: 2SC5184-T2 Remark: Contact your NEC sales representative to order samples for nt evaluation , No. 3 (collector) 1 0.3 3 000 units/reel d 2SC5184-T1 ARRANGEMENT 0.9 ± 0.1 , . DATA SHEET SILICON TRANSISTOR 2SC5184 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD , ) (Previous No. TC-2481) Date Published November 1996 N Printed in Japan © 1994 2SC5184 , 2SC5184 CHARACTERISTICS CURVES (TA = 25 °C) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE TOTAL


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1997 - transistor zo 607

Abstract: 4044 for amplification 865 IC marking ZO 607 transistor transistor C 5386 14893 marking 624 sc-70 4468 TRANSISTOR 2SC5184-T2 2SC5184-T1
Text: perforations 2SC5184-T2 3 0.15+0.1 ­0.05 3 000 units/reel 1 0 to 0.1 2SC5184-T1 , DATA SHEET SILICON TRANSISTOR 2SC5184 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD , © 1994 2SC5184 ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER SYMBOL MIN. TYP. MAX , terminal of the bridge. hFE Class Class Marking T86 hFE 2 FB 70 to 140 2SC5184 , 2SC5184 FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE NOISE FIGURE vs. COLLECTOR CURRENT


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PDF 2SC5184 2SC5184-T2 transistor zo 607 4044 for amplification 865 IC marking ZO 607 transistor transistor C 5386 14893 marking 624 sc-70 4468 TRANSISTOR 2SC5184-T2 2SC5184-T1
transistor C 5386

Abstract: 24 5805 054 000 829 c 4468 power transistor
Text: , 8 mm wide, Pin No. 3 (collector) facing the perforations Marking 2SC5184-T2 3 000 units/reel , DATA SHEET NEC SILICON TRANSISTOR 2SC5184 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER , IS T IC S (T a = 25 C) 2SC5184 PARAMETER Collector Cutoff Current Emitter Cutoff Current DC , ) 2SC5184 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Pt - To1al Power Dissipation - mW COLLECTOR , FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 2SC5184 N F - Noise Figure - dB lc - Collector


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PDF 2SC5184 SC-70 2SG5184-T1 2SC5184-T2 transistor C 5386 24 5805 054 000 829 c 4468 power transistor
em 6695

Abstract: LA 8873
Text: INFORMATION PART NUM BER 2SC5184-T1 CO Q U A N T ITY 3 000 units/reel A R R AN G EM EN T Em bossed tape, 8 mm wide, Pin No. 3 (collector) facing the perforations CD d 2SC5184-T2 3 000 units/reel , DATA SHEET NEC SILICON TRANSISTOR 2SC5184 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER , C apacitance SYMBOL Ic B O 2SC5184 MIN. TYP. MAX. 100 100 UNIT nA nA CO N D ITIO , a = 25 °C) T O TAL POWER DISSIPATION vs. AM BIENT TEM PERATURE 2SC5184 C O LLECTO R CURRENT


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PDF 2SC5184 SC-70 2SC5184-T1 2SC5184-T2 em 6695 LA 8873
nec 16312

Abstract: ha 13463 SN 16880 8377 om 7082 B ic audio amplifier TRANSISTOR C 5706 sn 7456 nec 8039 9522 transistor sm 4205
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA828TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR (WITH BUILT-IN 6-PIN 2 x 2SC5184 ) THIN-TYPE SMALL MINI MOLD FEATURES · Low noise NF = 1 .3 dB TYP. @ V ce = 2 V, Ic = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ V ce = 1 V, Ic = 3 mA, f = 2 GHz · · 6-pin thin-type small mini mold package adopted Built-in 2 transistors (2 x 2SC5184 ) PACKAGE DRAWINGS (U nit: mm) 2.10±0.1 . 1.25±0.1 p p 0.65 j , * ! ORDERING


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PDF uPA828TF 2SC5184) /xPA828TF /xPA828TF-T1 nec 16312 ha 13463 SN 16880 8377 om 7082 B ic audio amplifier TRANSISTOR C 5706 sn 7456 nec 8039 9522 transistor sm 4205
2012 - 2SK2396

Abstract: PC2763 pc1658 2SC3357 2SC3545 ne27283 UPC1663 2sc2757 2sc5008 2SC2570A
Text: (NE68733) 2SC5183(NE68739) 2SC5184 (NE68730) 2SC5185(NE68718) 2SC5186(NE68719) 2SC5191(NE68833) 2SC5192 , 2SC5178 2SC5180 2SC5181 2SC5182 2SC5184 2SC5183 2SC5185 2SC5186 2SC5436 16.0 2SC5369 2SC5409 , 2SC5178 2SC5179 2SC5180 2SC5181 2SC5182 2SC5183 2SC5184 2SC5185 2SC5186 2SC5191 2SC5192 2SC5193 2SC5194


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PDF X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 2SC3357 2SC3545 ne27283 UPC1663 2sc2757 2sc5008 2SC2570A
2SC5743

Abstract: 2SC5600 2SC5533 2SC5693 2SC5678 2sc5744 2SC5937 2SC4091 2sc5747 2SC5599
Text: 2SC5177 2SC5179 2SC5181 30 2SC5182 2SC5184 2SC5186 2SC5436 2SC5618 2SC5653


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PDF PC8190/8191KRX-IF PC8194/8195KRX-IF PG2124TH 10TSSOP 10-pin FAX044435-9608 2SC5743 2SC5600 2SC5533 2SC5693 2SC5678 2sc5744 2SC5937 2SC4091 2sc5747 2SC5599
Not Available

Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR juPA828TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR (WITH BUILT-IN 6-PIN 2 x 2SC5184 ) THIN-TYPE SMALL MINI MOLD FEATURES • PACKAGE DRAWINGS (Unit: mm) Low noise NF = 1.3 dB TYP. @ V ce = 2 V, Ic = 3 mA, f = 2 GHz 2 . 10 ± 0.1 NF = 1.3 dB TYP. @ V ce = 1 V, Ic = 3 mA, f = 2 GHz 1.25±0.1 • 6-pin thin-type small mini mold package adopted • Built-in 2 transistors (2 x 2SC5184 ) C \J C V J


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PDF juPA828TF 2SC5184) PA828TF-T PA828TF
1997 - d1047

Abstract: transistor d5032 transistor d1047 d4515 D4206 d4454 Nec D1297 D1047 transistor D4206 transistor d1413 transistor
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR PPA828TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR (WITH BUILT-IN 6-PIN 2 u 2SC5184 ) THIN-TYPE SMALL MINI MOLD FEATURES PACKAGE DRAWINGS (Unit: mm) · Low noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz 2.10±0.1 NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz 1.25±0.1 0.22+0.1 ­0.05 0.13±0.05 , Part Number 1.30 2.00±0.2 ORDERING INFORMATION R86 · Built-in 2 transistors (2 u 2SC5184


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PDF PPA828TF 2SC5184) PPA828TF-T1 d1047 transistor d5032 transistor d1047 d4515 D4206 d4454 Nec D1297 D1047 transistor D4206 transistor d1413 transistor
transistor d1047

Abstract: transistor d5032 D4206 D1047 transistor D4206 transistor D1047 d4515 d4454 d1413 transistor Nec D1297
Text: EPITAXIAL TWIN TRANSISTOR (WITH BUILT-IN 6-PIN 2 u 2SC5184 ) THIN-TYPE SMALL MINI MOLD FEATURES , Part Number 1.30 2.00±0.2 ORDERING INFORMATION R86 · Built-in 2 transistors (2 u 2SC5184


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transistor A431

Abstract: A641 NPN transistor TRANSISTOR A107
Text: €¢ Built-in 2 Transistors (2 × 2SC5184 ) SYMBOL RATING UNIT Collector to Base Voltage VCBO 5


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PDF PA808T PA808T-T1 transistor A431 A641 NPN transistor TRANSISTOR A107
1998 - nf025

Abstract: NE27283 upc27 NE42484 x-band power transistor 100W P147D 2SK2396 nf025db uPG508 c-band lna chip
Text: ) 2SC5183 (NE68739) 2SC5184 (NE68730) 2SC5185 (NE68718) 2SC5186 (NE68719) 2SC5191 (NE68833) 2SC5192 (NE68839 , 2SC5454 15.5*2 2SC5177 2SC5182 16.0 17.0 25.0 2SC5179 2SC5184 2SC5178 2SC5183 2SC5180 2SC5185 2SC5181 , 2SC5012 2SC5013 2SC5014 2SC5015 2SC5177 2SC5178 2SC5179 2SC5180 2SC5181 2SC5182 2SC5183 2SC5184 2SC5185


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PDF X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 NE42484 x-band power transistor 100W P147D 2SK2396 nf025db uPG508 c-band lna chip
Not Available

Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR ¿¿PA808T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD PACKAGE DRAWINGS FEATURES • (Unit: mm) Low Noise NF = 1.3 dB TYP. @ V ce = 2 V, Ic = 3 mA, f = 2 GHz 2 . 1± 0.1_ NF = 1.3 dB TYP. @ V ce = 1 V, Ic = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • 1.25±0.1 Built-in 2 Transistors (2 x 2SC5184 ) ORDERING INFORMATION PART NUMBER QUANTITY


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PDF PA808T 2SC5184) uPA808T-T1 uPA808T
1999 - uPD16305

Abstract: uPD63724A UPC5023 upc5024 2SC1940 uPC1237 UPC458 UPC2710 uPD65656 UPD65943
Text: 2SC5014 2SC5015 2SC5177 2SC5178 2SC5179 2SC5180 2SC5181 2SC5182 2SC5183 2SC5184 2SC5185 2SC5186 2SC5191


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PDF PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A UPC5023 upc5024 2SC1940 uPC1237 UPC458 UPC2710 uPD65656 UPD65943
1999 - uPD72002-11

Abstract: uPD16305 uPC1237 uPD65656 upc1701 2sb1099 2SD1392 uPD78F0841 UPD65625 uPG508
Text: 2SC5012 2SC5013 2SC5014 2SC5015 2SC5177 2SC5178 2SC5179 2SC5180 2SC5181 2SC5182 2SC5183 2SC5184 2SC5185


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PDF PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD72002-11 uPD16305 uPC1237 uPD65656 upc1701 2sb1099 2SD1392 uPD78F0841 UPD65625 uPG508
UA808

Abstract: MPA80 ic nec 1185 pin configuration LT 5238
Text: DATA SHEET SILICON TRANSISTOR UPA808T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD FEATURES · Low Noise NF = 1.3 dB TYP. @V ce = 2 V, le = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @V ce = 1 V, le = 3 mA, f = 2 GHz · · A Super Mini Mold Package Adopted Built-in 2 Transistors (2 x 2SC5184 ) PACKAGE DRAWINGS (Unit: mm) 2 .1± 0.1 1.25±0.1 ORDERING INFORMATION PART NUMBER /¿PA808T QUANTITY Loose products (50 PCS) ,uPA808T-T1 Taping products (3


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PDF UPA808T 2SC5184) PA808T uPA808T-T1 UA808 MPA80 ic nec 1185 pin configuration LT 5238
1997 - ic 731 1624

Abstract: 2SC5184 transistors ON 4673
Text: Transistors (2 × 2SC5184 ) SYMBOL RATING UNIT Collector to Base Voltage VCBO 5 V


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PDF PA808T PA808T-T1 ic 731 1624 2SC5184 transistors ON 4673
1997 - nec 838-1

Abstract: 2SC5184
Text: Transistors (2 × 2SC5184 ) SYMBOL RATING UNIT Collector to Base Voltage VCBO 5 V


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1997 - Not Available

Abstract: No abstract text available
Text: 2.0±0.2 ORDERING INFORMATION X Y 1 • Built-in 2 Transistors (2 × 2SC5184 ) SYMBOL


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1993 - 2SK2396A

Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 K2597 k2396 Marking Code SAW MOS transistor
Text: 2SC5180 2SC5181 2SC5182 *2 2SC5184 2SC5183 2SC5185 2SC5186 15.5 2SC5436 , 90 2 20 70 140 2 20 12.5 2 0 1 0.3 0.6 2SC5184 (NE68730) 5 , 1 V & 3 V FB T86 Fig.8 2SC5184 (NE68730) 2 20 2 11 1 3 2 1.3


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PDF P10100EJ6V0SG00 2SK2396A NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 K2597 k2396 Marking Code SAW MOS transistor
JRC 45800

Abstract: 0620 jrc jrc 13600 jtp sot 143 JRC 6005 4560 d JRC jrc 0620 4560 JRC JRC 76600 transistor 2sc 5586
Text: ) NE68719 2SC5186 19 NE68730 2SC5184 30 NE68718 2SC5185 18 PARAMETERS AND CONDITIONS UNITS MIN TYP MAX


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PDF NE687 OT-143} NE68718-T1 NE68719-T1 NE68730-T1 NE68733-T1 NE68739-T1 NE68739R-T1 JRC 45800 0620 jrc jrc 13600 jtp sot 143 JRC 6005 4560 d JRC jrc 0620 4560 JRC JRC 76600 transistor 2sc 5586
169800

Abstract: 80500 TRANSISTOR D 5036 cd 4599 4463 B 80500 bb
Text: NE68718 2SC5185 18 NE68719 2SC5186 19 NE68730 2SC5184 30 PARAM ETERS AND CON DITIONS UNITS MIN


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PDF NE687 OT-143) NE68718-T1 NE68719-T1 NE68730-T1 NE68733-T1 NE68739-T1 NE68739R-T1 169800 80500 TRANSISTOR D 5036 cd 4599 4463 B 80500 bb
80500 TRANSISTOR

Abstract: mje 2055 transistor lr 3303 KF 80500 LB 11911 0103 MA WJ 73 KF 80-500 049E-9 NE68719 60E-12
Text: NE68730 2SC5184 30 NE68733 2SC5182 33 NE68739/39R 2SC5183/83R 39/39R PARAMETERS AND CONDITIONS


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PDF NE687 NE687 NE68718-T1 NE68719-T1 NE68730-T1 NE68733-T1 E68739-T1 NE68739R-T1 24-Hour 80500 TRANSISTOR mje 2055 transistor lr 3303 KF 80500 LB 11911 0103 MA WJ 73 KF 80-500 049E-9 NE68719 60E-12
LB 11911

Abstract: 80500 TRANSISTOR mje 2055 ic 45800 IC 14553 KF 80500 60E-12 9971 KF 80-500 3231 sot-23
Text: hFE ICBO IEBO CRE4 PT NE68718 2SC5185 18 NE68719 2SC5186 19 NE68730 2SC5184 30


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PDF NE687 NE687 NE68718-T1 NE68719-T1 NE68730-T1 NE68733-T1 NE68739-T1 NE68739R-T1 24-Hour LB 11911 80500 TRANSISTOR mje 2055 ic 45800 IC 14553 KF 80500 60E-12 9971 KF 80-500 3231 sot-23
LB 11911

Abstract: SE 7889 85500 transistor mje 2055 90200 80500 TRANSISTOR 3231 sot-23 2SC5186 2SC5185 2SC5184
Text: 18 NE68719 2SC5186 19 NE68730 2SC5184 30 NE68733 2SC5182 33 NE68739/39R 2SC5183


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PDF NE687 8739R NE687 LB 11911 SE 7889 85500 transistor mje 2055 90200 80500 TRANSISTOR 3231 sot-23 2SC5186 2SC5185 2SC5184
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