The Datasheet Archive

2SC5176 datasheet (4)

Part ECAD Model Manufacturer Description Type PDF
2SC5176 2SC5176 ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SC5176 2SC5176 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SC5176 2SC5176 ECAD Model Toshiba Silicon NPN transistor for high current switching applications and DC-DC converter applications Scan PDF
2SC5176 2SC5176 ECAD Model Toshiba TRANSISTOR SILICON NPN EPITAXIAL TYPE(PCT PROCESS) Scan PDF

2SC5176 Datasheets Context Search

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2007 - 2SC5176

Abstract: No abstract text available
Text: 2SC5176 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5176 High-Current , 1 2006-11-10 2SC5176 Electrical Characteristics (Ta = 25°C) Characteristics Symbol , finish. 2 2006-11-10 2SC5176 IC ­ VCE 80 70 Common emitter Ta = 25°C 60 , 0.1 0.3 Collector current IC 3 1 3 10 (A) 2006-11-10 2SC5176 VBE (sat , 125 150 175 Ambient temperature Ta (°C) 4 2006-11-10 2SC5176 RESTRICTIONS ON


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PDF 2SC5176 2SC5176
2SC5176

Abstract: No abstract text available
Text: TO SH IBA TOSHIBA TRANSISTOR 2SC5176 HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS 2SC5176 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Unit in mm 10 ± 0.2 01.2 · · Low , u y p j T T T _ * _ .1 . J-i r- /m \ 1 2001 11-05 - TO SH IBA 2SC5176 , > 2SC5176 TO SH IBA 2SC5176 VBE(sat) - IC IC - VßE < o COLLECTOR CURRENT IC (A , ) 0 HC a, o, tó o H O a j o o 4 2001 11-05 - TO SH IBA 2SC5176 RESTRICTIONS ON


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PDF 2SC5176 2SC5176
C5176

Abstract: 2SC5176
Text: 2SC5176 NPN (PCT) 2SC5176 DC-DC : mm · : VCE (sat) = 0.4 V () (IC = , (//) (/ : 1.5 g () ) () () 1 2006-11-08 2SC5176 (Ta = 25 , . (: : ) 2 2006-11-08 2SC5176 IC ­ VCE VCE ­ IC 0.8 70 Ta = 25°C VCE (V) 80 · , 0.01 0.03 0.1 3 0.3 IC 1 3 10 (A) 2006-11-08 2SC5176 VBE (sat , 4 100 VCE (V) 2006-11-08 2SC5176 20070701-JA · · " "


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PDF 2SC5176 2-10T1A 20070701-JA C5176 2SC5176
2SC5176

Abstract: No abstract text available
Text: TO SH IBA TOSHIBA TRANSISTOR 2SC5176 HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS 2SC5176 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) INDUSTRIAL APPLICATIONS 10 ± 0.2 · · , TO SH IBA 2SC5176 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector , 0 > 2SC5176 1 0 U 11 NJ TO SH IBA 2SC5176 VBE(sat) - IC IC - VßE < o , 2SC5176 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the


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PDF 2SC5176 2SC5176
2004 - Not Available

Abstract: No abstract text available
Text: 2SC5176 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5176 High-Current , 0.15 A, duty cycle ≤ 1% 1 2004-07-07 2SC5176 Marking C5176 Part No. (or abbreviation , )-free finish. 2 2004-07-07 2SC5176 IC – VCE 80 70 Common emitter Ta = 25°C 60 , 0.03 0.1 0.3 1 3 10 Collector current IC (A) 3 2004-07-07 2SC5176 VBE , 2004-07-07 2SC5176 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is


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PDF 2SC5176
2006 - C5176

Abstract: No abstract text available
Text: 2SC5176 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5176 High-Current , report and estimated failure rate, etc). 1 2006-11-10 2SC5176 Electrical Characteristics (Ta = , finish. 2 2006-11-10 2SC5176 IC ­ VCE (V) 5 100 90 80 70 60 50 Common emitter Ta = 25 , 0.03 Collector current IC (A) Collector current IC (A) 3 2006-11-10 2SC5176 VBE (sat , Ambient temperature Ta (°C) 4 2006-11-10 2SC5176 RESTRICTIONS ON PRODUCT USE · The


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PDF 2SC5176 2-10T1A C5176
2004 - 2SC5176

Abstract: No abstract text available
Text: 2SC5176 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5176 High-Current , , duty cycle 1% 1 2004-07-26 2SC5176 Marking C5176 Part No. (or abbreviation code) Lot , 2SC5176 IC ­ VCE 80 70 Common emitter Ta = 25°C 60 Collector current Common emitter , current IC (A) 3 2004-07-26 2SC5176 VBE (sat) ­ IC IC ­ VBE 5 Common emitter Common , (°C) 4 2004-07-26 2SC5176 RESTRICTIONS ON PRODUCT USE 030619EAA · The information


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PDF 2SC5176 2SC5176
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR ? 2SC5176 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) < ; r >; 1 7 f i HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS INDUSTRIAL APPLICATIONS 10 ± 0.2 Low Collector Saturation Voltage : VCE (sat) = °-4V (Max.) (at Ic=3A ) High Speed Switching , subject to change without notice. 1997 02-03 1/4 - TOSHIBA 2SC5176 ELECTRICAL , < O 2SC5176 TOSHIBA 2SC5176 VBE(sat) - IC IC - VßE COLLECTOR CURRENT Ic (A


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PDF 2SC5176
2SC5176

Abstract: 2SC517
Text: TOSHIBA TOSHIBA TRANSISTOR 2SC5176 HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS 2SC5176 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) INDUSTRIAL APPLICATIONS · · Low Collector Saturation Voltage : VCE ( s a t ) = 0.4V (Max.) (at Ie = 3A) High Speed Switching Time : tgtg^l.O , /4 - TOSHIBA 2SC5176 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL CHARACTERISTIC , < O O o 1997 02-03 - > 3/4 TO SHIBA 2SC5176 VBE(sat) - IC < o IC - VßE


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PDF 2SC5176 2-10T1A 61001EA 2SC5176 2SC517
Not Available

Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC5176 INDUSTRIAL APPLICATIONS U nit in mm HIGH CURRENT SW ITCH IN G APPLICATIONS. D C-D C CONVERTER APPLICATIONS. · · Low Collector Saturation Voltage : v CE(sat) = °-4V (Max.) (at Ic = 3A) High Speed Switching Time : tstg=1.0/^s (Typ.) > in> 1 2 g] 3 - R * l M A X IM U M RATINGS (Ta = 25°C) 1. 2 3. BA SE C O LLE CTO R E M ITT ER , W JEDEC EIAJ 2-10T1A TOSHIBA W eight : 1.5g - °C °C 855 2SC5176 ELECTRICAL


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PDF 2SC5176 2-10T1A
Not Available

Abstract: No abstract text available
Text: T O SH IB A 2SC5176 2 S C 5 1 76 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SW ITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER APPLICATIONS • Low Collector Saturation Voltage : V C E ( s a t ) = 0 . 4 V (Max.) (at IC = 3 A , here in is su b je c t t o c han ge w ith o u t notice. 1997 02-03 1/4 - T O SH IB A 2SC5176 , H h3 1997 - 02-03 O O > > O 3/4 T O SH IB A 2SC5176 IC - V B E


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PDF 2SC5176
2sc5176

Abstract: No abstract text available
Text: 2SA1934 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CU RREN T SW ITCH IN G APPLICATIO N S. DC-DC CO N VERTER APPLIC ATIO N S. U nit in mm -ff Low Collector Saturation Voltage : V c E (s a t)= -° -4V (Max.) at I c = - 3 A High Speed Switching Time : tgtg=1.0/js (Typ.) Complementary to 2SC5176 Tí 2. M AXIM U M RATINGS (Ta = 25°C) 3. 1. BA SE C O L L EC T O R E M IT T E R CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector


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PDF 2SA1934 2SC5176 2-10T1A --100V, --10mA, 2sc5176
2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SD2088 2SC3303 2SC4532 2SA1803 2sc4408 GT10G102 2S0635
Text: 2SC5172 2SC5174 2SC5175 2SC5176 Page 802 807 808 810 815 820 821 825 826 827 828 829 830 831 832 833


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PDF 2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SD2088 2SC3303 2SC4532 2SA1803 2sc4408 GT10G102 2S0635
2SA1934

Abstract: 2SC5176 A1934 sa1934 S2555
Text: TOSHIBA 2SA1934 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2 S A1934 (2SA1934) HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS Low Collector Saturation Voltage : VCE (sat)= —0.4V (Max.) at IC= -3A High Speed Switching Time : tstg = 1.0/js (Typ.) Complementary to 2SC5176 MAXIMUM RATINGS (Ta=25°C) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage VEBO -7 V


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PDF 2SA1934 A1934 2SA1934) 2SC5176 2SA1934 2SC5176 A1934 sa1934 S2555
2SA1934

Abstract: 2SC5176
Text: TO SH IBA TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA1934 (2SA1934) 2SA1934 Unit in mm 10±0 .2 101.2 HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS · Low Collector Saturation Voltage : VCE (sat)= - ° - 4V (Max.) at I q = - 3 A · · High Speed Switching Time : tgtg^l.O/^s (Typ.) Complementary to 2SC5176 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base Voltage Collector Current Collector


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PDF 2SA1934 2SA1934) 2SC5176 2SA1934 2SC5176
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR 2SA1934 HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS 2 SA 1 9 3 4 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm · · · Low Collector Saturation Voltage : VCE (sat) = -0.4V (Max.) at I q = -3 A High Speed Switching Time : tg^g= l.O^s (Typ.) Complementary to 2SC5176 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation


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PDF 2SA1934 2SC5176
Not Available

Abstract: No abstract text available
Text: TOSHIBA 2SA1934 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2 S A 1 934 (2SA1934) HIGH CURRENT SWITCHING APPLICATIONS U nit in mm DC-DC CONVERTER APPLICATIONS 10 ± 0.2 • 01.2 Low Collector Saturation Voltage : v C E ( s a t ) = - ° - 4V (Max.) at I c = - 3 A • High Speed Switching Time : tstg = 1.0 / j s (Typ.) • Complementary to 2SC5176 CO.5 / \C0.5 M A X IM U M RATINGS (Ta = 25°C) SYMBOL RATING UNIT Collector-Base Voltage


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PDF 2SA1934 2SA1934) 2SC5176
20irj

Abstract: EH25 0680L 2SA1934 2SC5176
Text: TO SH IBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA1934 2SA1934 HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS · Low Collector Saturation Voltage : VCE (sat)= - ° - 4V (Max.) at I q = - 3 A · · High Speed Switching Time : tgtg^l.O/^s (Typ.) Complementary to 2SC5176 M AXIM UM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature


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PDF 2SA1934 2SC5176 20irj EH25 0680L 2SA1934 2SC5176
2SA1934

Abstract: 2SC5176 toshiba l40
Text: TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA1934 (2SA1934) 2SA1934 U nit in mm 10 ± 0.2 HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS i 01.2 · Low Collector Saturation Voltage · VCE (sa t)~ -0.4V (Max.) at 1q = - 3 A · · High Speed Switching Time : t^ g =1.0^ 8 (Typ.) Complementary to 2SC5176 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base Voltage Collector Current Collector


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PDF 2SA1934 2SA1934) 2SC5176 2SA1934 2SC5176 toshiba l40
2006 - Not Available

Abstract: No abstract text available
Text: 2SA1934 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1934 High-Current Switching Applications DC-DC Converter Applications Unit: mm · · · Low collector saturation voltage: VCE (sat) = -0.4 V (max) (IC = -3 A) High-speed switching: tstg = 1.0 µs (typ.) Complementary to 2SC5176 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction


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PDF 2SA1934 2SC5176 2-10T1A
2004 - 2SA1934

Abstract: 2SC5176 A1934
Text: 2SA1934 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1934 High-Current Switching Applications DC-DC Converter Applications Unit: mm · Low collector saturation voltage: VCE (sat) = -0.4 V (max) (IC = -3 A) · High-speed switching: tstg = 1.0 µs (typ.) · Complementary to 2SC5176 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -100 V Collector-emitter voltage VCEO -80 V Emitter-base


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PDF 2SA1934 2SC5176 2SA1934 2SC5176 A1934
2007 - 2SA1934

Abstract: 2SC5176 A1934
Text: 2SA1934 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1934 High-Current Switching Applications DC-DC Converter Applications Unit: mm · Low collector saturation voltage: VCE (sat) = -0.4 V (max) (IC = -3 A) · High-speed switching: tstg = 1.0 s (typ.) · Complementary to 2SC5176 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -100 V Collector-emitter voltage VCEO -80 V Emitter-base


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PDF 2SA1934 2SC5176 2SA1934 2SC5176 A1934
2SC4793 2sa1837

Abstract: 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 transistor 2SC5359 2SC5171 transistor equivalent 2sc5198 equivalent NPN Transistor
Text: 2SA1926 N 2SA1934 N 2SC5176 N 2SC3303 Y 2SA1803 N 2SC4688 N 2SA1939 N 2SC5196 N 2SA1452A 2SC3710A , Switching Power Transistor NPN TO-220(N)IS 2 2 2 2 2SC5176 2SA1934 2SC4688 2SA1803 2SC5196


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PDF 2SA2058 2SA1160 2SC2500 2SA1430 2SC3670 2SA1314 2SC2982 2SC5755 2SA2066 2SC5785 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 transistor 2SC5359 2SC5171 transistor equivalent 2sc5198 equivalent NPN Transistor
2sc5088 horizontal transistors

Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
Text: 2SA1804 2SA1940 10 4 2SA1013 2SA1225 2SC5176 2SC3303 2SC4688 2SC5196 8 12 160 , 2SC5176 2SC3303 2SA1926 2SA1315 2SA1429 2SC3328 2SC3669 2SC3474 TPC6701 2SC5810 , 28 2SC4881 TO-220(N)IS 50 5 25 2SC5176 TPL 80 5 28 2SC4915 SSM


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PDF BCE0016A 3501C-0109 F-93561, 2sc5088 horizontal transistors equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
2sC5200, 2SA1943

Abstract: TPCP8L01 TPCP8602 2sc5200 2sC5200 2SA1943 2SC4793 2sa1837 TTC003 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
Text: 2SC5176 2SC3303 2SC4688 2SC5196 8 2SA1940 2SC4689 2SC5197 10 12


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PDF TTC003 SC-64) BCJ0016F BCJ0016E 2sC5200, 2SA1943 TPCP8L01 TPCP8602 2sc5200 2sC5200 2SA1943 2SC4793 2sa1837 TTC003 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
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