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LM131AH Rochester Electronics LLC Voltage to Frequency Converter, 1 Func, 0.1MHz, MBCY8, PACKAGE-8
LM131AH/883B Rochester Electronics LLC Voltage to Frequency Converter
LM131H Rochester Electronics LLC Voltage to Frequency Converter, 1 Func, 0.1MHz, MBCY8, PACKAGE-8
LM131H/B Rochester Electronics LLC Voltage to Frequency Converter
LM131AH/883 Rochester Electronics LLC Voltage to Frequency Converter, 1 Func, 0.01MHz, Bipolar, MBCY8, METAL, TO-5, 8 PIN
LM2917MX-8 Texas Instruments Frequency to Voltage Converter 8-SOIC -40 to 85

2SC5111(F) datasheet (8)

Part ECAD Model Manufacturer Description Type PDF
2SC5111(F) 2SC5111(F) ECAD Model Others Silicon NPN Transistor Scan PDF
2SC5111(F) 2SC5111(F) ECAD Model Others Silicon NPN Transistor Scan PDF
2SC5111F 2SC5111F ECAD Model Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
2SC5111F-O 2SC5111F-O ECAD Model Toshiba TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF
2SC5111FT 2SC5111FT ECAD Model Toshiba NPN EPITAXIAL PLANAR TYPE (FOR VCO APPLICATION) Scan PDF
2SC5111FT 2SC5111FT ECAD Model Toshiba NPN Transistor Scan PDF
2SC5111FT 2SC5111FT ECAD Model Toshiba TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF
2SC5111F-Y 2SC5111F-Y ECAD Model Toshiba TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF

2SC5111(F) Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - 2SC5111

Abstract: No abstract text available
Text: 2SC5111 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5111 For VCO Application , , IC = 5 mA 4 6 ¾ GHz VCE = 5 V, IC = 5 mA, f = 1 GHz 7 11 ¾ dB ¾ 0.7 , Cre Collector-base time constant Ccrbb' Note 1: hFE classification VCB = 5 V, IE = 0, f = 1 MHz (Note 2) VCB = 5 V, IC = 3 mA, f = 30 MHz O: 80~160, Y: 120~240 Note 2: Cre is measured by 3 terminal method with capacitance bridge. 1 2003-03-24 2SC5111 Marking 2


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PDF 2SC5111 2SC5111
2SC5111

Abstract: No abstract text available
Text: 0 3 f (GHz) 2 4 6 8 3 10 12 VCE (V) 2009-10-22 2SC5111 , 2SC5111 NPN 2SC5111 : mm VHF~UHF (Ta = 25 , : (//) (/ ) ( ) () 1 JEDEC JEITA 2-2H1A : 2.4 mg () 2009-10-22 2SC5111 (Ta = 25 , 5 GHz VCE = 5 V, IC = 5 mA, f = 1 GHz 6 10 dB 0.9 pF 0.7 , S21e Cob Cre Ccrbb' 1: hFE 2 Ccrbb' VCB = 5 V, IE = 0, f = 1 MHz


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PDF 2SC5111 -j150 -j100 -j250 2SC5111
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR 2SC5111 FOR VCO APPLICATION 2SC5111 SYMBOL VCBO VCEO v EBO tB , =0 ÏEBO hpE (Note 1) V ce = 5V, Iq = 5mA fT V ce = 5V, Iq = 5mA VCE = 5V, Ic = 5mA, |S 2 le l 2 f = 1GHz Output Capacitance VCB = 5V, Ie = 0, f = 1MHz Cob (Note 2) Reverse Transfer Capacitance C re VCB -5V, IC = 3mA, Collector-Base Time Constant e c-rbb' f = 30MHz MIN. TYP. MAX. UNIT - - 0.1 /¿A - - , liab ility o f its products. N evertheless, sem icon d u ctor devices in g e n e ral can m alfunction


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PDF 2SC5111 --j50
2SC5111

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR 2SC5111 FOR VCO APPLICATION 2SC5111 SYMBOL VCBO v CEO v EBO , hpE (Note 1) V ce = 5V, Iq = 5mA fT V ce = 5V, Iq = 5mA Vce = 5V, Ic = 5mA, |S 2 le l 2 f = 1GHz Output Capacitance VCB = 5V, Ie = 0, f = 1MHz Cob (Note 2) Reverse Transfer Capacitance C re VCB -5V, IC = 3mA, Collector-Base Time Constant e c-rbb' f = 30MHz MIN. TYP. MAX. UNIT - - 0.1 juA - - 0.1 juA - 240 - 80 4 , o f its products. N e vertheless, s e m ic o n d u c to r devices in g e n e ra l can m a lfu n c


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PDF 2SC5111 2SC5111
sp 0631

Abstract: TE 2556
Text: 05-09 1/4 - TOSHIBA 2SC5111 300 200 h F E - IC 100 70 50 30 20 VCE = 5V , TOSHIBA TOSHIBA TRANSISTOR 2SC5111 FOR VCO APPLICATION nrsm wêêêf a r SILICON NPN , u fn f P v u i ^o i ri \u+ Ü D - ? DC Current Gain hpg (Note 1) V ce - 5V, I q 5mA V çe = 5V, I q = 5mA Transition Frequency fT V c e = 5V, Ic = 5mA, Insertion Gain | S 21 el2 f = 1GHz Output Capacitance VCB = 5V, IE = 0, f = 1MHz Cob (Note 2) Reverse Transfer Capacitance Cre V c b = 5V, Ic = 3mA


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PDF 2SC5111 sp 0631 TE 2556
2007 - Not Available

Abstract: No abstract text available
Text: 2SC5111 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5111 For VCO Application Unit , 1 V, IC = 0 VCE = 5 V, IC = 5 mA VCE = 5 V, IC = 5 mA VCE = 5 V, IC = 5 mA, f = 1 GHz VCB = 5 V, IE = 0, f = 1 MHz (Note 2) Min 80 3 6 Typ. 5 10 0.9 0.7 6 Max 0.1 0.1 240 1.1 11 Unit A A GHz dB pF pF ps VCB = 5 V, IC = 3 mA, f = 30 MHz Note 1: hFE classification O: 80~160 , 2SC5111 Marking 2 2007-11-01 2SC5111 3 2007-11-01 2SC5111 S-Parameter Frequency


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PDF 2SC5111
Not Available

Abstract: No abstract text available
Text: T O SH IB A TOSHIBA TRANSISTOR 2SC5111 FOR VCO APPLICATION 2SC5111 SYMBOL VCBO VCEO Ve b , b = 5V, Ic = 3mA, Collector-Base Time Constant Cc-rbb' f =30MHz CHARACTERISTIC Collector Cut-off , th e q u a lity and th e reliab ility o f its products. N evertheless, sem icon d u ctor devices in g , e ra b ility to physical stress. It is th e resp on sib ility o f th e bu yer, w h e n u tilizin g T O SH IB A products, to observe sta n d ard s o f safe ty, and to avoid situ atio n s in w h ich a m


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PDF 2SC5111
2SC5111

Abstract: No abstract text available
Text: TO SH IBA TOSHIBA TRANSISTOR 2SC5111 FOR VCO APPLICATION 2SC5111 SYMBOL VCBO VCEO Ve b o , , Iq = 5mA 6 - GHz V c e = 5V, Iq = 5mA, f=lG H z 7 11 - dB - 0.7 - pF VCB = 5V, Ie = 0, f = 1MHz (Note 2) - 0.5 0.9 pF 5.5 10 ps V c b = 5V, Ic -3mA, f =30MHz - SYMBOL CHARACTERISTIC Collector , ) TRANSITION FREQUENCY fT (GHz) DC CURRENT GAIN hFE ( - ) FREQUENCY f (GHz) COLLECTOR-EMITTER VOLTAGE to cr I O < m H H °i O to il w < 2SC5111 TO SH IBA 2SC5111 PC - Ta


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PDF 2SC5111 2SC5111
Not Available

Abstract: No abstract text available
Text: 2SC5111 T O SH IB A TOSHIBA TRANSISTOR 2 SILICON NPN EPITAXIAL PLANAR TYPE S C 5 1 , 5mA, f=lG H z VCB = 5V, IE = 0, f = 1MHz (Note 2) V cb = 5V, Ic = 3mA, f =30MHz MIN. — â , to change w ithout notice. 1998 10-28 - 1/4 o o f 3 3 m f cts o H O 3 3 O C 1 1 ts 2 1 -3 cr H I O g H 2SC5111 2SC5111 T


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PDF 2SC5111
2010 - 2SC5111

Abstract: No abstract text available
Text: 2SC5111 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5111 For VCO Application , 3 5 GHz VCE = 5 V, IC = 5 mA, f = 1 GHz 6 10 dB 0.9 pF , Collector-base time constant Ccrbb' Note 1: hFE classification VCB = 5 V, IE = 0, f = 1 MHz (Note 2) VCB = 5 V, IC = 3 mA, f = 30 MHz O: 80 to 160, Y: 120 to 240 Note 2: Cre is measured by 3 terminal method with capacitance bridge. 1 2009-10-22 2SC5111 Marking 2 2009-10-22


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PDF 2SC5111 2SC5111
2000 - 2SK3075 equivalent

Abstract: 10 ghz transistor MT3S04T 2SK3078 MT6P06E 3SK320 transistor 2SC5066 MT6P03AE 2SC5066 24lu1
Text: MT3S03AU MT3S04AU MT3S07U RF Amp USM 2SC5066 2SC5086 2SC5108 2SC5111 2SC5111 2SC5086 , products, and also support h FE rank. The new f T = 16 GHz series are also now been added to our product , high-current device 2SC5109 2SC5110 2SC5111 2SC5111FT - - O/Y fT = 10 GHz low-voltage , Low-current Mid-current Low-voltage operating type Transition frequency fT (GHz) f = 1 GHz Ta = , 4 2 0 1 lS21el 2-IC 6 4 f =1GHz Ta=25°C 1 3 5 10 30 50 10


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PDF 2SC5065 2SC5085 2SC5090 2SC5095 MT3S06U MT3S07U 2SC5066 2SC5086 2SC5091 2SC5096 2SK3075 equivalent 10 ghz transistor MT3S04T 2SK3078 MT6P06E 3SK320 transistor 2SC5066 MT6P03AE 2SC5066 24lu1
2SC5111

Abstract: No abstract text available
Text: TOSHIBA T O S H IB A TRA N SIST O R 2SC5111 FOR VCO A PPLIC A TIO N 2SC5111 SYMBOL VCBO , , Iq = 5mA V ce = 5V, Iq = 5mA V ce = 5V, Iq = 5mA, f=lG H z VCB = 5V, Ie = 0, f = 1MHz (Note 2) V cb = 5V, Ic -3mA, f =30MHz MIN. - - 80 4 7 - - - TYP. - - - 6 11 0.7 0.5 5.5 MAX. UNIT 0.1 ¡J.K , fO H Ä > c ts 3 o «! to tr I O o < il m to H 2SC5111 TOSHIBA 2SC5111 PC - Ta , .5 -6 3 .6 -6 8 .8 1998 10-28 - 3/4 TOSHIBA 2SC5111 S lle = 5mA Ta = 25°C (UNIT : Ù


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PDF 2SC5111 2SC5111
2SC5111

Abstract: No abstract text available
Text: TOSHIBA 2SC5111 FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5111 FT FOR VCO APPLICATION MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V , €” Transition Frequency fT VCE = 5V, Ic = 5mA 4 6 — GHz Insertion Gain |S2lel2 VCE = 5V, Ic = 5mA, f = 1GHz 7 11 — dB Output Capacitance Cob VCB = 5V, Ie = 0, f = 1MHz (Note 2) — 0.7 — pF Reverse Transfer Capacitance Cre — 0.5 0.9 pF Collector-Base Time Constant ecTbb' VCB = 5V, Iç; = 3mA, f =


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PDF 2SC5111 0022g
sj 2252 ic

Abstract: sj 2252
Text: IT V V V mA mA mW °C °C SSM JE D E C T ype N a m e h f E R ank /M D : 0 R ank IM E : Y R ank E IA J T , re n t DC C u rre n t G a in T r a n s itio n F re q u e n c y In se rtio n G ain O u tp u t C a p a , IT /'A /ih - - V c e = 5V , lQ = 5m A V c E = f >V, lQ = 5m A - GHz dB pF pF ps 6 11 0.7 0.5 5.5 - - - 0.9 10 V c e = 5V, lQ = 5m A , f = 1GHz V c b = 5 V , I e = 0, f = 1M Hz (N ote 2) V c b = 5V, I c = 3m A , f = 3 0 M H z - (N ote 1) : h p E C la ssific a tio n O


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PDF ollSC5111 2SC5111 sj 2252 ic sj 2252
Not Available

Abstract: No abstract text available
Text: V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 ± 0.1 · TWO devices are , °C) 2SC5111 i SYMBOL RATING 20 VCBO 10 VCEO 3 Vebo 60 ic 30 ÏB 200 PC 125 Tj -55-125 Tstg MARKING L 4 , im p ro v e th e q u a lity and th e re lia b ility o f its pro d u cts. N evertheless, s e m ico n d , f th e b u ye r, w h e n u tiliz in g TOSHIBA pro d u cts, t o observe standards o f sa fe ty, and to avo id s itu a tio n s in w h ic h a m a lfu n c tio n o r fa ilu re o f a TOSHIBA p ro d u c t co


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PDF HN3C14FT 2SC5111
2tj transistor

Abstract: No abstract text available
Text: HN3C14FT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 TWO , MOUNTED DEVICES Q 1/Q 2 Three-pins (SSM) mold products are corresponded D- 2SC5111 j , €” 3 5 — GHz dB 6 10 — — pF 0.9 — VCB = 5V, IE = 0, f = lM H z pF 0.7 — (Note) — Cc-rbb’ VCB = 5V, I q = 3mA, f =30M Hz SYMBOL :CBO lEBO hpE fT |S21el2 Cob TEST CONDITION , , f =1000M Hz — 11 6 ps (Note) Cre is measured by 3 terminal method capacitance bridge


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PDF HN3C14FT 2SC5111 S21el2 1000M 2tj transistor
Not Available

Abstract: No abstract text available
Text: T O SH IB A TENTATIVE TOSHIBA TRANSISTOR HN3C14FT H Mí f 1 dFT SILICON NPN EPITAXIAL PLANAR TYPE m 'm w V H F - U H F BAND LO W NOISE AM PLIFIER APPLICATIONS Unit , corresponded M A X IM U M RATINGS (Ta = 25°C) (N l A ° 2SC5111 J SYMBOL RATING 20 VCBO 10 VCEO , is presented only as a guide for the applications o f our products. No responsibility is assumed by , , Iç; = 5mA, f = 1000MHz VCB = 5V, Ic = 3mA, f =30MHz - 6 11 ps (Note) Cre is measured by 3 terminal


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PDF HN3C14FT 2SC5111 S21el2 1000MHz 30MHz
2SC5111

Abstract: HN3C14FT
Text: corresponded 2SC5111 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage , 5 — GHz Insertion Gain |S2lel2 VCE = 5V, Iq = 5mA, f = 1000MHz 6 10 — dB Output Capacitance Cob VCB = 5V, Ie = 0, f = 1MHz (Note) — 0.9 — pF Reverse Transfer Capacitance Cre — 0.7 — pF Collector-Base Time Constant Cc'rbb' VCB = 5V, Ic = 3mA, f = 30MHz — 6 11 ps (Note) Cre is measured by 3


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PDF HN3C14FT 2SC5111 1000MHz 30MHz 2SC5111 HN3C14FT
Not Available

Abstract: No abstract text available
Text: 2SC5111 FT TO SHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 11 FT , VCB = 5V, IE = 0, f=lM Hz (Note 2) VCB = 5V, Iq = 3mA, f =30MHz MIN. TYP. MAX. UNIT — â , tin u a lly w o rk in g to im pro ve th e q u a lity an d th e re liab ility o f its products. N , o f th e buyer, w h e n u tilizin g T O S H IB A products, to observe standards o f safe ty, and to avoid situ atio n s in w h ich a m alfu n ctio n or fa ilu re o f a T O S H IB A product could cause


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PDF 2SC5111
2SC5111

Abstract: HN3C14FT
Text: corresponded 2SC5111 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage , €” Transition Frequency fT V"CE = 5 V, Ic = 5 mA 3 5 — GHz Insertion Gain |S2lel2 Q1 Vce = 5 V, Ic = 5 mA, f , , lE = 0, f = 1 MHz (Note) — 0.6 1 pF cre Q2 — 0.7 1.1 pF Collector-Base Time Constant ec-rbb' Q1 VCE = 5 V, IE = 3 mA, f = 30 MHz — 4.5 15 ps Cc-rbb' Q2 — 3.6 14 ps (Note) : Cre is


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PDF HN3C14FT 2SC5111 2SC5111 HN3C14FT
2SC5111

Abstract: HN3C14FT
Text: 2SC5111 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V , |S2lel2 Q1 Vce = 5 V, Ic = 5 mA, f = 1000 MHz 7 10 — dB |S2lel2 Q2 7.5 10.5 — dB Reverse Transfer Capacitance cre Q1 VCE = 5v, lE = 0, f = 1 MHz (Note) — 0.6 1 pF cre Q2 — 0.7 1.1 pF Collector-Base Time Constant ec-rbb' Q1 VCE = 5 V, IE = 3 mA, f = 30 MHz — 4.5 15 ps Cc-rbb' Q2 — 3.6 14 ps (Note) : Cre


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PDF HN3C14FT 2SC5111
2005 - FET K161

Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Text: 2SC5087 C (O, Y) 394 2SC2716 F (R, O, Y) 239 2SC5088 MC (O, Y) 400 2SC2717 , 2SC5111 MD/ME (O/Y) 497 2SC4215 Q (R, O, Y) 319 2SC5111FT MD/ME (O/Y) 502 , 2SC5111 *MT4S104T 2SC4247 2SC5106 *MT4S102T *MT4S104U 2SC3547A MT4S101T *MT4S102U , VCE IC VCE IC VCC IC VAGC f (V) (mA) (mW) (Crb ) (mA) (MHz) (V , ) ID VG2S f (V) (mA) (V) (MHz) 3SK195 150 0~0.1 6 0/4 13 6


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PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 FET K161 Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
JDV2S31CT

Abstract: 1SV283B 2SK1875 1SV271 JDP2S04E IS-136 IMT-2000 DCS1800 1SV308 1SV128
Text: ) MT3S15TU NF, IS21eI2­IC 16 VCE = 5 V f = 1 GHz Ta = 25 °C NF(dB) 3.5 3 14 |S21e|2 12 , 10 OIP3­IC 36 34 VCE = 5 V 32 30 28 26 24 22 PIN = ­15 dBmW f = 500 MHz ( 1 MHz , 1.50 5 20 1 IC (mA) 1: 25.4 x 25.4 x 0.8 (mm) IC (mA) f (GHz) (dB) VCE (V) IC (mA) f (GHz) UFM PW-Mini * 13 2. fT = 7 GHz fT = 4 GHz MT3S16FS fT-IC fT-IC fT (GHz) fT (GHz) 5 4 3 2 VCE = 1 V f = 1 GHz


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PDF BCJ0003F BCJ0003E JDV2S31CT 1SV283B 2SK1875 1SV271 JDP2S04E IS-136 IMT-2000 DCS1800 1SV308 1SV128
k192a

Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 C2995 K241
Text: C2644 C2668 C2669 C2670 L D ( ·0, Y, G, L) QD (··R, 0 , Y) RD (··R, 0 , Y) F D (··R, 0 , Y) C2717 C2753 , 2SC5094 2SC5095 2SC5096 2SC5097 2SC5098 2SC5106 2SC5107 2SC5108 2SC5109 2SC5110 2SC5111 2SK161 2SK192A , ( ··· Y, G) UB RBD ( D - G , L, V) F G UC UD UE UH UI UL UJ UM UR UT UU Page 664 669 674 680 683 686


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PDF 1SS154 1SS239 1SS241 1SS242 1SS268 1SS269 1SS271 1SS295 1SS312 1SS313 k192a c2458 C2498 C2668 C2717 C1923 Y C2499 k710 C2995 K241
sec 2sc5088

Abstract: samsung UHF/VHF TV Tuner RF Bipolar Transistor transistor 2SC5066 2SC5066 datasheet 2SC5088 SEC MT6L04AE AU82 MT6L63FS JDV2S71U
Text: S21e l2 - IC 20 VCE = 2 V f = 2 GHz Ta = 25 °C 30 25 |S21e| ­ Insertion Gain (dB) 20 , Frequency (GHz) 35 * New product 3 5 7 10 30 50 70 VCE = 3 V VCE = 2 V f = 2 , f = 2 GHz Ta = 25 °C 1.2 1.0 0.8 MT4S100T MT4S101T MT4S102T MT4S104T MT4S200T* 0.6 , ) fT ­ Transition Frequency (GHz) fT-IC 5 4 3 2 VCE = 1 V f = 1 GHz Ta = 25 °C 1 , MT3S12T VCE = 1 V f = 2 GHz Ta = 25 °C 1 IC ­ Collector Current (mA) 10 100 IC ­


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PDF BCE0003D S-167 BCE0003E sec 2sc5088 samsung UHF/VHF TV Tuner RF Bipolar Transistor transistor 2SC5066 2SC5066 datasheet 2SC5088 SEC MT6L04AE AU82 MT6L63FS JDV2S71U
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