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2SC505/O datasheet (2)

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2SC505

Abstract: 2SC506 2SC506-R neon tube 2SC505-R 2SC506R Produced by Perfect Crystal Device Technology
Text: ?-sc505 2sc506 l i/UD^NPNHMSliiÖBh^Vy^CPCTBSC) ^SILICON NPN TRIPLE DIFFUSED TRANSISTOR (PCT PROCESS: o O ¡«¡StETW y v o ^a-xfc&fl-JB o High Voltage Amplifier, High Voltage Switching and Neon Tube Driver Applications. a ft x n m INDUSTRIAL APPLICATIONS SBEft. : VOEO = 300V (2SC505 ) VCEO = 200V ( 2 S C 5 0 6 ) MXféfè MAXIMUM RATINGS (Ta = 35'G ) characteristic symbol ratino unit , characteristics k t " o 2 IH M 00 I.Z A Ì.0 r .8


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PDF -sc505 2sc506 2SC505 2SC505 2SC506 2SC506-R neon tube 2SC505-R 2SC506R Produced by Perfect Crystal Device Technology
2SC505

Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO! 5b DE I ^ Q T T H S O 000741H 9097250 TOSHIBA CD ISC RE TE / O PT O ) b feC 074L2 D f - 2 ? - y SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS , T E R 2. B A S E 3. C O L L E C T O R ( O A S E ) Collector-Emitter Voltage 2SC506 Emitter-Base , l l l l l l l l l l H I I I I l l l l 1 1 1 I l i u m 1 1 1 1 U H I I I I m iT O S WIB A c o r p o r a t i o n T O S H I B A { D I S C R E T E / O P T 0> 9097250 TOSHIBA


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PDF 000741H 074L2 2SC506, 2SC505) 2SC506) 2SC505 2SC506 ODG7414
2SC306

Abstract: 2SC137 2SC138 2sc230 2SC458LG C 2SC387AGTM 2SC238 2SC309 2SC130 2SC135
Text: No file text available


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PDF 2SC27 2SC130 2SC131 2SC132 2SC134 2SC135 2SC136 30MHz T0-92ff5 2SC387AGTM 2SC306 2SC137 2SC138 2sc230 2SC458LG C 2SC387AGTM 2SC238 2SC309 2SC130
10Q04

Abstract: 2SC108A 2SC109A 10M15 2SC510 cd 40240 2SC506 2SC505 2SC504 2SA594
Text: 13 O £ CD h! CD & tr o 3 P- P CD ^ n o M M CD n rr ^ 0 P p- n I Ir1 p- tr ^ su 'C CO CD < P- n CD o o •d fd p- CQ PJ rr to o o u> (16) TO-39 PACKAGE SERIES Application To-39 -3 o 00 H CD > rS W H H n 70 Tvoe No. ■c vCE0 PC hFE vCE(sat) MAX. fyTYP. Cob TYP. SW Time TYP. -i m Ta=26'C ,Tc=2D'C (W) V0E 'C io "R VCF in ffc1MHz VCR tori tstg (Ms) tf \ NPN PNP (A) (V) (V) (A) (V) (A) (A) (MHz) (V) (A) (pF) (V) (Ms) (ms) 0 -0 High Voltage SW 2SC507 0.1 120 0.75 40-240 5 10m


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PDF To-39 2SC507 2SC594 2SA594 2SC506 20MAX. 2SC497 2SA497 2SC512 2SAS12 10Q04 2SC108A 2SC109A 10M15 2SC510 cd 40240 2SC506 2SC505 2SC504 2SA594
2SC108A

Abstract: 2SC109A 2SA503 2SC524 2SB678 2SC512 2sc497
Text: ) DARLINGTO N 2SC512 with Frange 2SC510 with Frange 2 1.5 50 100 60 100 OODflflTfl 1.5 S rT'33- O !


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PDF 2SC507 2SC594 2SC506 2SC505 2SC504 2SC503 2SC498 2SC109A 2SC108A 2SC497 2SA503 2SC524 2SB678 2SC512
2SC1048

Abstract: No abstract text available
Text: High Voltage Transistors TYPE NO. POLA RITY CASE MAXIMUM RATINGS VC E O Pi Ic Vcer« ICM* (mW) (mA) (V) 360 400 700 800 800 800 500 300 250 300 1250 1250 1250 625 625 625 625 625 350 350 350 350 500 625 600 600 800 600 1000 1000 800 1000 1000 600 1000 1000 350 350 350 350 300 200 250 300 250 600 600 750 750 2500 2500 300 600 800 250 200 100 100 50 100 100 100 100 100 30 100 100 100 100 100 500 500 100 50 50 50 50 100 600 500 500 200 100 100 50 1000 50 50 100 150 150 600 600 600 600 50 50 100 50 50


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PDF O-92A O-92B O-92B 2SC1048
2SC1012

Abstract: 2sc1279 2SA675 2SC1012A 2SC526 2SA749 2SA639 2SA637 2SC505 2SC1103
Text: No file text available


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PDF 2SA637 2SA639 O-92B 2SA675 2SA685 2SA749 2SC505 2SC1012 2sc1279 2SC1012A 2SC526 2SC1103
2SA675

Abstract: 2sc1279 2SA685 transistors 2SA749 2SC507 2SC506 2SC505 2SA749 2N6735 2N6734
Text: No file text available


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PDF 2N6734 O-237A 2500G 2N6735 ZSA637 25A639 O-92B 2SA675 2sc1279 2SA685 transistors 2SA749 2SC507 2SC506 2SC505 2SA749
2010 - 2SC1861

Abstract: mpsa42q LOW-POWER SILICON NPN BF417 sm 6aa PE155A
Text: Telefunken See Index AmperexElec PhilipsElec PhilipsElec Am rexElec o I a rp NthAmerSemi NEC Corp JA Motorola


Original
PDF PN3440 BFN22 BF622 BF422S PE422 S922TS BF822S S2057 2SC3333 2SC3334 2SC1861 mpsa42q LOW-POWER SILICON NPN BF417 sm 6aa PE155A
2SA675

Abstract: 2SC507
Text: No file text available


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PDF 2N6734 2N6735 2SA637 2SA639 2SA675 2SA685 2SA749 2SC505 2SC506 2SC507
2SC557

Abstract: 2SC548 2sc431 kt200 2SC403A 2SC546 2sc516 2SC402 2SC556 2sc500
Text: No file text available


Original
PDF 2SC401 2SC402 2SC402A 2SC403 2SC403A 2SC403B 2SC403C 2SC404 2SC405 2SC406 2SC557 2SC548 2sc431 kt200 2SC403A 2SC546 2sc516 2SC402 2SC556 2sc500
mg75n2ys40

Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
Text: No file text available


Original
PDF 02BZ2 1S2092 1SZ5759 02CZ2 1S2094 2N3055 02CZ5 1S2095A 2N3713 02Z24A1M mg75n2ys40 MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
2SA532

Abstract: BC109 BC184 BC549 BC317 2SC734 Y BC159 8 MS181A BC357 TTP31A 2SC876 ML78M06A
Text: ML79M24A MLV-10-4R-6G MLV-10-G MLV-IO-G/ O MLV-10-G/R MLV-IO-O MLV-IO-OR MLV-10-R MLV-10-S MLV-10-U PAGE 119


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PDF 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N4004 1N4005 2SA532 BC109 BC184 BC549 BC317 2SC734 Y BC159 8 MS181A BC357 TTP31A 2SC876 ML78M06A
2003 - TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Text: 200 50 150 70~240 3 10 0.5 10 1 N O High Voltage 2SC3265 , 10 1.3 300 0.3 AN High Current : hFE O : 70~140 Y: 120~240 GR: 200~400 BL


Original
PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
2003 - mg75n2ys40

Abstract: 2N3055 TOSHIBA mg150n2ys40 TOSHIBA 2N3055 TLR103 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Text: No file text available


Original
PDF 050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TOSHIBA 2N3055 TLR103 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
germanium

Abstract: BLY34 KPL 3009 2SB502 2sb504 ADY20 acy52 bf197 bf505 transistor bc 5488
Text: pi Bb 7 8 » JX L 10 11 ^max Pb Ab P , o . (mA) (mW) x 12 B 13 (mA) 14 Comments ' , 3b Pb Ab u max ^max P , o , (mA) 13 12 B (mW) i t ' f / g 14 Comments (MHz) The letters , 5) 1 2 3 K Type Mnfr. 4 1 ! Sb Pb a 10 11 ma) ^m ax P , o , (V) M a p ! 6 • (mA , case) Package outline (column 6 1 2 3 K Type Mnfr. 4 7 5 Ma pi 1 8 10 ii max P , o , (mA , f g 14 C o m m e n ts (MH*> The letters used here indicate the pin connections of the particular


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PDF
y51 h 120c

Abstract: ac128 bd192 bd124 MM1711 BD214 al103 KT368 AFY18 BFQ59
Text: 25MWF 65MWF 3M 3M 4M 1M 1M 15A 15A 15A 2MA 3A 100C 10 0 C 100C 85C 90C 15 O W C 150WC 150WC 20MWF , BIAS USE MFR EQUIV EUR USA EQUIV RMS ANG AHG AHG AHG TIB TIB OBS OBS OBS ASY29 B O Y 20 BDY20 , TIB OBS OBS OBS OBS BDY20 BDY20 B O X 11 BDX11 ASY27 2N3055 2N3055 2N3442 2N3055 2N1305 18V 15V 12V , 20V 20V 30V 7A 7A 5A 7A 7A 10 0 C 10 0 C 95C 95C 85C 90WC 150WC 50WC 90WC 15 O W C 100K 200K 10 0


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PDF 500MA 500MA 240MWF 240MWF y51 h 120c ac128 bd192 bd124 MM1711 BD214 al103 KT368 AFY18 BFQ59
aeg diode Si 61 L

Abstract: aeg diodes D6 BC23B SILICONIX U315 SGS Transistors 2N3750 2N339 2N3299 transistor bf 175 2N2197 GENERAL ELECTRIC
Text: Maximum Ratings should never be exceeded in normal use. They COLUMN HEADINGS C o b Output capacitance fT , to source voltage V c b o Collector to base voltage, emitter open circuit V ceo Collector to emitter , ,SGS ,u AEG,F,N ,Sp ,u AEG,F,N,S p ,u AEG,F,N ,Sp ,u F A E G ,F ,F e ,M o , N,SGS,u AEG,F,N,Sp,u F , N , -92 TD-92 DB 09 09 BC1bD-6 e c ib o - io ao o _ 60 60 1 _ 160 120 - _ 120 300 AOO - _ - - □a , .5 A.5 TO-10 T0-1B r o -1 0 rO-92 r o -1 0 05 05 05 06 05 0C179A BC179B PNP PNP Si Si 300 300


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PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 BC23B SILICONIX U315 SGS Transistors 2N3750 2N339 2N3299 transistor bf 175 2N2197 GENERAL ELECTRIC
2N2222A 338

Abstract: TFK 949 al103 2N1167 halbleiter index transistor ad161 ac128 BSY19 tfk 1007 ac132
Text: No file text available


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PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 al103 2N1167 halbleiter index transistor ad161 ac128 BSY19 tfk 1007 ac132
NT101

Abstract: bf503 KT-934 Kt606 SEMICON INDEXES Mps56 transistors 2SA749 72284 2sk81 2SB618
Text: cbo Col lector-base breakdown voltage (emitter o /c) 4 V ceo Collector-emitter breakdown voltage (base o /c) 5 lc or le Maximum collector (or emitter) current 6 P max Maximum power dissipation (with , 7BH Tel:0925 808008 Tlx:628524 Fax:0925 827693 * No longer manufacture/last known address 2.01 o , 28203 * No longer manufacture/last known address o Have BS9000/CECC Approval 2.02 (c) Copyright , longer manufacture/last known address 2.03 o Have BS9000/CECC Approval (c) Copyright Semicon Indexes


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PDF
IGBT M16 100-44

Abstract: Ericsson RBS 6102 ASEA HAFO AB GM378 Transistor B0243C Kt606 Ericsson SPO 1410 SEMICON INDEXES transistor 8BB smd tr/NEC Tokin 0d 108
Text: CORPORATION GET GERMANIUM POWER DEVICES CORP. GPD GREAT EASTERN MFG. CO. LTD.* GEM o Flave BS9000/CECC , INC. NTE NTT ELECTRONICS TECHNOLOGY CORP. NEL NUCLEONIC PRODUCTS CO INC. NUC NUOVA MISTRAL NMS O , OPTO DIODE CORP. OPD OSHINO LAMPS LTD. OSH OXLEY DEVELOPMENTS Co.Ltd. OXL o Have BS9000/CECC , DIVISION o PHI PHILIPS ECG ECG PHILIPS ECG/Amperex Elec.Corp. SYS PHILIPS MICROWAVE LIMEIL PHM PHILLIPS , . PIC PIHER INTERNATIONAL LTD PIH PLESSEY SEMICONDUCTORS / GEC PLESSEY o GPS POLYFET RF DEVICES PLY


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PDF W211d W296o W211c IGBT M16 100-44 Ericsson RBS 6102 ASEA HAFO AB GM378 Transistor B0243C Kt606 Ericsson SPO 1410 SEMICON INDEXES transistor 8BB smd tr/NEC Tokin 0d 108
Augat PGm

Abstract: Motorola 68060 PGM068-1Al PGM168-7A1715-V pgm068 INTEL P24T o/1acwd PPS238-7A1916-V 22X22 12X12
Text: Footprints oooooooooo oooooooooo o o o o o o o o o o o o o oV o o o o o o o o o o oooooooooo ipooooooooo 64 Pins 9 Without Window FP 10 oooooooooo oooooooooo o o o o o o o o oooooooooo ipooooooooo 67 Pins 11 o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o P O o o O O O O O O O O o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o 85 Pins 12 oooooooooo oooooooooo o o o o o o o o o o o o o V o o o o o o o o o o o o oooooooooo ipooooooooo 65 Pins 14 9x9 o


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PDF PGM168-7A1715-V PPS238-7A1916-V 41x41 45x45 Augat PGm Motorola 68060 PGM068-1Al PGM168-7A1715-V pgm068 INTEL P24T o/1acwd PPS238-7A1916-V 22X22 12X12
o/1acwd

Abstract: No abstract text available
Text: BGA Device Dimension and I/ O Requirements 5 Energy Way, West Warwick, Rl 02893 USA Tel: 800-424-9850 , - Oo o o o o o 0 oo o o o o o o o o o o o o o o o o o o o o o o o o o Oo o o o o o o oo o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o oo o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o oo o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o oo o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o oo o o o o o o o o o o o o o o o o o o


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PDF FT-TECH02 o/1acwd
Not Available

Abstract: No abstract text available
Text: PGA / ZIF o p e n top NP178 Series (interstitial) CHARACTERISTICS Insulation Resistance , at 5 0 0 V D C 7 0 0 V A C fo r 1 ( o n e ) m inu te 30 m £ 2 m a x im u m at 1 0 m A /2 0 m V -5 , .O5_ Design Number Number of Contacts Socket Series X MATERIAL B ody P o ly e th e r im id e (P E I) g la s s fille d C o n ta ct B e r y lliu m C o p p e r C o n ta c t P la tin g G o ld o , 2 3 4 5 6 7 8 9 10 1 12 13 14 15 16 17 18 19 20 1 lo O o o o o o o o o o o o o o o o o o o O o o


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PDF NP178 NP178-72002
Not Available

Abstract: No abstract text available
Text: SI s o ^ OO r- í £ CM = o o > CO ^ m » ™ ^ / O o o o o o o o o o o o o o o o o o o o o o A O o o o o o o o o o o o o o o o o o o o o o B O o o o o o o o o o o o o o o o o o o o o o c o o o 0 0 0 0 o o o o o o o o o o o o o o o D o o o 0 0 0 0 o o o o o o o o o o o o o o o E o o o 0 0 0 0 o o o o o o o o o o o o o o o F o o o 0 0 0 0 o o o o o o o o o o o o o o o G o o o 0 0 0 0 o o o o o o o o o o o o o o o H o o o 0 0 0 0 o o o o o o o o o o o o o o o J o o o 0 0 0 0 o o o o o


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PDF I//I-25ICI PSC-4287
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