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2SC504/O datasheet (2)

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2SC503

Abstract: 2SC5031 2SC504 2SA503 2SA504
Text: =-3vA DUTY CYCLE o 3 'VC&=15V 30 50 TYP. 0.06 0.8 80 13 16 40 450 100 MAX. 0.5 1.0 300 0.5 , " (mA) 1 3 5 10 33 50 100 300 1000 COLLECTOR CURRENT Ic (mA) II « g 63 S S S W o Cib.Cob - VCB â , o


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PDF 2SC5031 2SC504, 80MHz 2SC503) 2SC504) 2SA503 2SA504. 2SC503 2SC504 2SA504
2SC503

Abstract: 2SC504 2SC503-Y 2SA504 transistor 2sc503 2sc503 x SA508 2SC504-O toshiba 2sc5 UIO12
Text: SILICON NPN EPITAXIAL TRANSISTOR (PCT PROCESS 2SC 5 2Sc5 O iS ffl & if fi ffl O SIlM^y/fl o High Frequency Ampl if ier Appl i cat ions o High Speed Switching Applications mmBT-t: vCE0 <¥K , ) ¿SA508. 2 S A 5 O 4• t = S 7 >) s y f HKitOit. Complementary to 2 SA 5 0 8 and 2SA504 maximum ratings , t on —J— -1 P— 300 o VC / A a , \ U-i \ o 12 8 4 ~ "«-^'SSIE Ifl (mA) 0 10 20 30 ■IS .y^Hmffi M VCE (V) ta


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PDF 150MHz 800mW 600mA SA508. 2SA504 2SC503 2SC504 28C503 28C504 2SC504 2SC503-Y 2SA504 transistor 2sc503 2sc503 x SA508 2SC504-O toshiba 2sc5 UIO12
2SC503

Abstract: 2SC504 2SA503 2SC503-2SC504 2SC503/Y
Text: TOSHIBA ÍDISCRETE/OPTO} ~5b » i j SOTTESO 0D0740T O y 2 S C 5 0 3 , 09.S9MAX. o 7*-3 5 W $ ' Unit in mm FEATURES: · High Transition Frequency : fT=80MHz (Typ.) · , : 50^150, GR : 100^300 T O SH IB A CO R PO R A T IO N illillilllllillllllllllllllllim , O S H iB Aco r p o r a t io n -3 4 1 - - Ì © E M IT T E R I N P U T CAPACITANCE Ci b , OUTPUT CAPACITANCE o cn o CO < O W ISO o to CO M ro <0 KJ Z J Z M TOSHIBA C O R PO R A


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PDF 0D0740T 80MHz 2SC503) 2SC504) 2SA503 2SA504. 2SC503 2SC504 2SC503-2SC504 2SC503/Y
2010 - BF394 MOTOROLA

Abstract: 2SC733 LOW-POWER SILICON NPN 2N542 S8GD BF215 BF226 BFW29 2SC733/G
Text: ToshibaCorp SemiconTech Indust Mexi See Index See Index V/ O Electro Indust Mexi Indust Mexi See Index See


Original
PDF 2N3845 2N3845A 2N3855A 2S0654 TEC80130 2SC828 BF394 BF3950 2N1278 BF394 MOTOROLA 2SC733 LOW-POWER SILICON NPN 2N542 S8GD BF215 BF226 BFW29 2SC733/G
2SC875 D

Abstract: 2SC875 2N5816 2SA532 2SA504 2SA503 2N5822 2SC87 2sc1175 2SA562
Text: Medium Power Amplifiers and Switches TYPE >- CASE MAXIMUM RATINGS H FE VCE(SAT) t Cob COMPLE- T NO. £ < P 1 V_ 1 V max I T min max MENTARY -1 d C CEO C CE C o 0. (mW) (A) (V) min max ImAI (V) (V) (A) (MHz) (pF) TYPE 2N5816 N TO-92F 625 0.75 40 100 200 2 2 0.75 0.5 120 15 2N5817 2N5817 P TO-92F 625 0.75 40 100 200 2 2 0.75 0.5 120 15 2N5816 2N5818 N TO-92 F 625 0.75 40 150 300 2 2 0.75 0.5 135 15 2N5819 2N5819 P TO-92F 625 0.75 40 150 300 2 2 0.75 0.5


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PDF 2N5816 O-92F 2N5817 2N5817 2N5816 2N5818 2N5819 2N5819 2SC875 D 2SC875 2SA532 2SA504 2SA503 2N5822 2SC87 2sc1175 2SA562
2SC1216

Abstract: sc 1365 2SC1006 2SC710 2SC945 2SC1740LN 2SC2320L 2sc1364 2SC1368B 2sc1162
Text: No file text available


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PDF 2sd425 2sc1570 2sc732tm 2sc1842 2sc2634 2sc2320l 2sc1740ln 2sc1843 2SC1216 sc 1365 2SC1006 2SC710 2SC945 2SC1740LN 2sc1364 2SC1368B 2sc1162
2sc498

Abstract: 2SC875 FT501 2sc1175 2SA503 2sa708 2SC938 2SA532 2N6714 2N6715
Text: No file text available


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PDF 2N6428 O-92A 2N6714 O-237 2N6726 2N6715 2N6727 2N6716 2sc498 2SC875 FT501 2sc1175 2SA503 2sa708 2SC938 2SA532
2N6728

Abstract: 2SC875 2sc1175 2SA606 2N6714 2sa708 2SB504 2N6428 2N6715 2N6716
Text: No file text available


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PDF 2N6428 O-92A 2N6714 O-237 2N6726 2N6715 2N6727 2N6716 2N6728 2SC875 2sc1175 2SA606 2sa708 2SB504
2SC875 E

Abstract: 2N5816 2SC875 2N5822 2SB504A 2n5813
Text: No file text available


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PDF 2N5810 2N5811 2N5812 2N5813 2N5814 2N5815 2N5816 2N5817 2N5818 2N5819 2SC875 E 2SC875 2N5822 2SB504A
10Q04

Abstract: 2SC108A 2SC109A 10M15 2SC510 cd 40240 2SC506 2SC505 2SC504 2SA594
Text: 13 O £ CD h! CD & tr o 3 P- P CD ^ n o M M CD n rr ^ 0 P p- n I Ir1 p- tr ^ su 'C CO CD < P- n CD o o •d fd p- CQ PJ rr to o o u> (16) TO-39 PACKAGE SERIES Application To-39 -3 o 00 H CD > rS W H H n 70 Tvoe No. ■c vCE0 PC hFE vCE(sat) MAX. fyTYP. Cob TYP. SW Time TYP. -i m Ta=26'C ,Tc=2D'C (W) V0E 'C io "R VCF in ffc1MHz VCR tori tstg (Ms) tf \ NPN PNP (A) (V) (V) (A) (V) (A) (A) (MHz) (V) (A) (pF) (V) (Ms) (ms) 0 -0 High Voltage SW 2SC507 0.1 120 0.75 40-240 5 10m


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PDF To-39 2SC507 2SC594 2SA594 2SC506 20MAX. 2SC497 2SA497 2SC512 2SAS12 10Q04 2SC108A 2SC109A 10M15 2SC510 cd 40240 2SC506 2SC505 2SC504 2SA594
2SC306

Abstract: 2SC137 2SC138 2sc230 2SC458LG C 2SC387AGTM 2SC238 2SC309 2SC130 2SC135
Text: No file text available


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PDF 2SC27 2SC130 2SC131 2SC132 2SC134 2SC135 2SC136 30MHz T0-92ff5 2SC387AGTM 2SC306 2SC137 2SC138 2sc230 2SC458LG C 2SC387AGTM 2SC238 2SC309 2SC130
2SC108A

Abstract: 2SC109A 2SA503 2SC524 2SB678 2SC512 2sc497
Text: ) DARLINGTO N 2SC512 with Frange 2SC510 with Frange 2 1.5 50 100 60 100 OODflflTfl 1.5 S rT'33- O !


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PDF 2SC507 2SC594 2SC506 2SC505 2SC504 2SC503 2SC498 2SC109A 2SC108A 2SC497 2SA503 2SC524 2SB678 2SC512
2SC1634

Abstract: 2SC510 TM 1298 2SC4455 2SC2258 2SC3419 2SC828 2SC1515 1279S 2SC1285
Text: No file text available


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PDF 2SC510 2SC2104 2SC1236 2SC504 2SC4455 2SC1634 2SC510 TM 1298 2SC2258 2SC3419 2SC828 2SC1515 1279S 2SC1285
2SA503

Abstract: 3CK90 3CK9 2SA504
Text: T O S H I B A -CDISCRETE/OPTOJ JÍ (D IS C R E T E / O P T O ) dFI^DTTSSD bbC 07 22 1 0 72E1 4 | T 3 7 " /s' 9097250 T O S H IB A SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA503 , .) .00.45 H i g h Br e a k d o w n V o ltage : V q EO=-80V V c E O =-60V L o w Satura t i o n V o , C Collector- B a s e V o ltage Collector- E m i t t e r V o ltage Emitter-Ba s e V o ltage Collector , Current Gain CNo?e> Collector- E m i t t e r Ic=-150mA, I]j=-15mA VcE(sat) Saturation V o l t a g e


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PDF 2SA503' 2SA504, 80MHz 2SA503) 2SA504) -150mA, -15mA) 2SC503 2SC504. 2SA503 3CK90 3CK9 2SA504
2SA503

Abstract: 2SA504 2SA503-Y 2SC504 2SA504-Y U800 2SA504-O 2SC503 2SA503-GR Produced by Perfect Crystal Device Technology
Text: SILICON PNP EPITAXIAL TRANSISTOR (PCT PROCESS) o «a«««« o High Frequency Amplifier Applications o High Speed Switching Applications j§ x H ffl INDUSTRIAL APPLICATIONS 28 0 5 03 , 2SA504-0 30 90 2 S A 5 0 3 — Y 2SA504-Y 50 150 2SA50 3-&R 2SA504-OR 100 300 INPUT 270n O-W- O /iS , o x1 | -600 J,-12 6-10 7 -8 / -6 r / '-4 s Ig*—1mA '1 1 | o | -30 -20 « IB -10 (mA) - 0 -20 -40 -60 1 VCE w


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PDF 130MHz 2SA503) 800mW -600mA 2SC503 2SC504 2SA503 2SA504 2SA504 2SA503-Y 2SA504-Y U800 2SA504-O 2SA503-GR Produced by Perfect Crystal Device Technology
2SA481

Abstract: 2SC484 transistors EP 487 2SC1000 2sc400 2SC497 2SC372 2SC501 2SC486 transistor 2SC372
Text: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : HBrhSliSIXSIftlSK (New Transistor Manual) lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English translation key given below. m m m m (Ta~25' o • « / Vf « : • (ta^zs'c}:-'. n s « a « m m m a Vas vm> le Pc B fa»®*« '« 4 t z. k, U* m hr


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PDF 2SC503 2SC504 2SC495 2SC509 2SC510 2SA481 2SC484 transistors EP 487 2SC1000 2sc400 2SC497 2SC372 2SC501 2SC486 transistor 2SC372
2SA572

Abstract: 2SC1006 2SC696 2SC708 2SC984 2SC708A 2SC734 equivalent 2SC680 2SA518 datasheet 2sa564
Text: No file text available


Original
PDF 2SA501 2SA502 2SA503 2SA504 2SA505 2SA506 2SA507 2SA508 2SA509 2SC828 2SA572 2SC1006 2SC696 2SC708 2SC984 2SC708A 2SC734 equivalent 2SC680 2SA518 datasheet 2sa564
2SA554

Abstract: 2SA553 2sa584 2SA429GTM 2SA564 2SC521A 2SC520A 2SC519A 2SA639S 2SA552
Text: No file text available


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PDF SA119 2SA429GTM 2SA473 2SA503 2SA504 2SA510 -1SA625 O-92JFÃ 2SA638S T0-92JB 2SA554 2SA553 2sa584 2SA564 2SC521A 2SC520A 2SC519A 2SA639S 2SA552
2SC557

Abstract: 2SC548 2sc431 kt200 2SC403A 2SC546 2sc516 2SC402 2SC556 2sc500
Text: No file text available


Original
PDF 2SC401 2SC402 2SC402A 2SC403 2SC403A 2SC403B 2SC403C 2SC404 2SC405 2SC406 2SC557 2SC548 2sc431 kt200 2SC403A 2SC546 2sc516 2SC402 2SC556 2sc500
2SB415

Abstract: 2SB 710 2sc1061 HD68P01 2sb504 2sd524 2SC930 2sb507 2sA858 2sc827
Text: l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & > b ') £ i ~ ) . i C j l o -c , & ttJ: ') '), Y y > y x 9 ^itiX o ^ jt f i^ S L T # ,^ t . 5JH ±& *n‘J, *iSo#mtefcStf&Z>±, f f 4 ' o T < fc , 3 M - 6 - ffl * Type N . o 2SA 43 m 44 M anuf dr i£ T 45 46 m dr & 47 48 m. - 49 50 - 52 - 53 • SAN O Y V — â


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PDF 4000HÂ 2SB415 2SB 710 2sc1061 HD68P01 2sb504 2sd524 2SC930 2sb507 2sA858 2sc827
mg75n2ys40

Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
Text: No file text available


Original
PDF 02BZ2 1S2092 1SZ5759 02CZ2 1S2094 2N3055 02CZ5 1S2095A 2N3713 02Z24A1M mg75n2ys40 MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
2SA532

Abstract: BC109 BC184 BC549 BC317 2SC734 Y BC159 8 MS181A BC357 TTP31A 2SC876 ML78M06A
Text: ML79M24A MLV-10-4R-6G MLV-10-G MLV-IO-G/ O MLV-10-G/R MLV-IO-O MLV-IO-OR MLV-10-R MLV-10-S MLV-10-U PAGE 119


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PDF 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N4004 1N4005 2SA532 BC109 BC184 BC549 BC317 2SC734 Y BC159 8 MS181A BC357 TTP31A 2SC876 ML78M06A
1998 - DK53

Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement BUH513 MJ2955 replacement
Text: No file text available


Original
PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement BUH513 MJ2955 replacement
1997 - DK53

Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
Text: No file text available


Original
PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
2003 - TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Text: 200 50 150 70~240 3 10 0.5 10 1 N O High Voltage 2SC3265 , 10 1.3 300 0.3 AN High Current : hFE O : 70~140 Y: 120~240 GR: 200~400 BL


Original
PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
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