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2SC400-G datasheet (2)

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2SC400

Abstract: 8S040 Produced by Perfect Crystal Device Technology 2SC400 M
Text: COMMON EMITTER Ta=100'C L4 1.2 g I1" œ lo nfi


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PDF 300ns 8SA300 28A500 50MHz 2SC400 5011Hz 2SC400 8S040 Produced by Perfect Crystal Device Technology 2SC400 M
2SC1216

Abstract: sc 1365 2SC1006 2SC710 2SC945 2SC1740LN 2SC2320L 2sc1364 2SC1368B 2sc1162
Text: - 112 - * i * * * * * * * * * * * * t ♦ * * * * * m. « Type No. tt S Manuf. H # sanyo * a toshiba b m nec b iL hitachi g ± a fujitsu fé T matsushita z m mitsubishi □ — A rohm 2 sc 1343 (h) b iL 2sd425 2sc 1344 B iL 2sc1570 2sc732tm 2sc1842 2sc2634 2sc2320l 2sc1740ln 2sc 1345 b iL 2sc1570 2sc732tm 2sc1843 2sc2634 2sc2320l 2sc1740ln 2sc 1345k b iL 2sc1740 2sc 1346 fé t 2sd734 2sc3419 2sc2001 2sc1162 2sc1317 2sc2060 2sc 1347 fé t 2sc2274 2sc3419 2sc1162


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PDF 2sd425 2sc1570 2sc732tm 2sc1842 2sc2634 2sc2320l 2sc1740ln 2sc1843 2SC1216 sc 1365 2SC1006 2SC710 2SC945 2SC1740LN 2sc1364 2SC1368B 2sc1162
tbf819

Abstract: mg50g2cl4 MG30T1AL1 GT60J101 2SD1678 ths102a MG60M1AL1 MG150N2CK1 YTF541 THS106A
Text: 1N4149 1SV274 1N4151 1SV275 1SV283 2SC2754 1N4152 2SA429 ( G ) TM , 2SA495 ( G ) TM 2SA1015 2SC3667 2SC3668 1N4446 2SA1159 2SA1408 2SC3745 1N4447 , 2SC4202 2SC4605 1S1555 1SS193 2SC366 ( G ) TM 2SC1959 2SC4255 2SC4252 1S1585 1SS193 2SC367 ( G ) TM 2SC1959 2SC4318 1S1586 1SS193 2SC372 ( G ) TM 2SC1815 2SC4392 2SC5107 1S1587 1SS193 2SC373 ( G ) TM 2SC1815 2SC4560 2SC4542 1S1588 1SS193


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PDF 04AZ3 02CZ3 1SV186 1SV245 2SC2391 05AZ3 1SV204 1SV216 2SC2483 tbf819 mg50g2cl4 MG30T1AL1 GT60J101 2SD1678 ths102a MG60M1AL1 MG150N2CK1 YTF541 THS106A
2SC367

Abstract: 2SC372
Text: 10 10 4 10 70 15 30 High Current SW 2SC367( G )TM 2SA 467© TM 30 400 , /140 10 10 11/22 10 60/50 400 2SC372( G )TM j 2S A 495© TM 50 150 400 7 , ( G )TM 50 150 400 200-700 :> 50/40 General Purpose ,05 30 High Current


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PDF 2SC367 2SC509 2SA500 2SC970 2SC1380A 2SC2550 12SA1090 2SC979A 2SC372
2SA500

Abstract: 2SA499 2SC400 2SC979 2sc97 I100N Produced by Perfect Crystal Device Technology 2SA500-O
Text: •160 IC-VCE (LOW VOLTAGE REGION) -120 g -80 a -40 0 -1 -2 -3 -4 -5 vce (v) » i y 'Sit


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PDF 2sa499 2sa500 2SA500 250MHZ 400ne 2SC979 2SC400 2SC400 2sc97 I100N Produced by Perfect Crystal Device Technology 2SA500-O
2SC2550

Abstract: 2SA1090 2SC400 2SC970 2SC1380A 2sa467 2SC2550 TOSHIBA NPN 2sc372 2SC395A 2SC979A
Text: in G CO CM S ® r» $ S5 CM S 1® p». (0 CO u w (M S ® a> o in §S CM S ® a> o m U m CM S ® in S < S 1® co S5 CM S ê o> CM «Î < *— en o £ CM S l® CM P» CO a «0 CM S ® co S CM ! g , | TCHTSSD □0DT143 *=i 7 - O / 09143 = VI U O E BO .60 BO —- — O O +-» > g 00 a O Ico 5 O


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PDF 2SA1090 2SC395A 2SC400 2SC970 2SC1380A 2SC2550 2SC979A 2SA1090 2sa467 2SC2550 TOSHIBA NPN 2sc372 2SC979A
2SC644

Abstract: 2SC1000 2SA1715 2SC1222 2SC1815 2SC828 2SC923 2SC1330 2SA1015 2sC537
Text: @ lKHz + typical value hCHlVßß □□□14Ô G 3ST 80


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PDF 2SA641 O-92B 2SA666 2SA666A 2SA673A 2SA721 2SC644 2SC1000 2SA1715 2SC1222 2SC1815 2SC828 2SC923 2SC1330 2SA1015 2sC537
2SD424

Abstract: 2SD424 TOSHIBA 2SC2285A-KA 2SC2993 TL 1084 2sc790 2SC2926 2sc1162 2SC2762 2SC1061
Text: No file text available


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PDF 2SC3140 2SC3141 2SC1755 2SC515A 2SC2085 2SD314 2SD526 2SC2516 2SD1135 2SD1266A 2SD424 2SD424 TOSHIBA 2SC2285A-KA 2SC2993 TL 1084 2sc790 2SC2926 2sc1162 2SC2762 2SC1061
2SC1330

Abstract: 2SC1000 2SC923 2SC734 2SC373 2SC400 2sc539 2SC735 2SC537 2SC538A
Text: No file text available


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PDF 2SC316 2SC372 2SC373 2SC380 2SC400 2SC454 2SC536 2SC537 2SC538 2SC538A 2SC1330 2SC1000 2SC923 2SC734 2sc539 2SC735
2SA481

Abstract: 2SC484 transistors EP 487 2SC1000 2sc400 2SC497 2SC372 2SC501 2SC486 transistor 2SC372
Text: g • 504 ■- -80 - 5 -600 800 175 -0.5 -60 30-300 - 2 -150 -10 10 80* 22 12 84 B 2SC504 t 3


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PDF 2SC503 2SC504 2SC495 2SC509 2SC510 2SA481 2SC484 transistors EP 487 2SC1000 2sc400 2SC497 2SC372 2SC501 2SC486 transistor 2SC372
transistor 2sc124

Abstract: transistor 9014 NPN equivalent of transistor 9014 NPN 2sC103 transistor Transistor BC 548 transistor bc 547 BC 9014 2SC124 9014 Transistor BC 547 transistor
Text: No file text available


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PDF To-92 2SC15-0 2SC166 2SC376 2SC15-1 2SC167 2SC400 2SC16 2SC182 2SC401 transistor 2sc124 transistor 9014 NPN equivalent of transistor 9014 NPN 2sC103 transistor Transistor BC 548 transistor bc 547 BC 9014 2SC124 9014 Transistor BC 547 transistor
2SA640

Abstract: 2SA564A-P 2SA564 2SC644 2SA876H 2SC537 TO-92B 2N5138 2SA1715 2SC372
Text: No file text available


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PDF 2N5138 2N5172 O-92B 2N5209 O-92A 2N5210 2N5219 2IM5223 2SA640 2SA564A-P 2SA564 2SC644 2SA876H 2SC537 TO-92B 2SA1715 2SC372
2SC644

Abstract: 2SC1222 2sC537 2SC1000 2SA889 2SC1328 2SC1327 2SC828 P 2SC923 2SA1015
Text: No file text available


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PDF 2SA641 O-92B 2SA666 2SA666A 2SA673A 2SA721 2SC644 2SC1222 2sC537 2SC1000 2SA889 2SC1328 2SC1327 2SC828 P 2SC923 2SA1015
2sa467

Abstract: 2SA431 2SA468 2SA476 2SA416 2SA422 2SA440 2SA417 2SA401 2SA469
Text: No file text available


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PDF 2SA401 2SA402 2SA403 2SA404 2SA405 2SA406 2SA407 2SA408 2SA409 2SA410 2sa467 2SA431 2SA468 2SA476 2SA416 2SA422 2SA440 2SA417 2SA401 2SA469
2SC331 equivalent

Abstract: 2SC331 2sa467 2SC386A 2SC328 2sc317 2SC337 2SC369 2SC368 2sc327
Text: No file text available


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PDF 2SC301 2SC302 2SC303 2SC304 2SC305 2SC306 2SC307 2SC308 2SC309 2SC310 2SC331 equivalent 2SC331 2sa467 2SC386A 2SC328 2sc317 2SC337 2SC369 2SC368 2sc327
2SB415

Abstract: 2SB 710 2sc1061 HD68P01 2sb504 2sd524 2SC930 2sb507 2sA858 2sc827
Text: l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1 , about the dif­ ference in polarity. (le g e n d ) M an W. jdiscontinued {t[ct"faaW- ",principally , £ J ffe -2 1 230 231 jfi pp /5 iS 6 p 2SA53 7A( g ) ^ p ^ pp “ p p n o , – " 2SA493© 2SA101 5 2SA1015 2SA594 2SA1 58 1 23A984 2SA922( g ) 2SA990 2SA836 , 2SA537( g ) 2SA537( g ) 2SA 530( g ) m 2SA922( g ) 2SA76 1 2 SA76 1 2SA761 529 5300 2SA504 2SA


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PDF 4000HÂ 2SB415 2SB 710 2sc1061 HD68P01 2sb504 2sd524 2SC930 2sb507 2sA858 2sc827
2sc 9015

Abstract: 2SC644 BC 945 CS9015 9014n 2SC828 transistor BC 945 2N4248 BC267 2sa564 transistor
Text: No file text available


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PDF BC107 O-106 O-92B -26UNF-2A O-48D 2sc 9015 2SC644 BC 945 CS9015 9014n 2SC828 transistor BC 945 2N4248 BC267 2sa564 transistor
2sc 9015

Abstract: 2SC644 CS9015 2N4248 transistor MPS 6518 2SC923 mpsa09 2N3550 scr 4059 2sc539
Text: No file text available


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PDF BCW86 O-92F BCY56 BCY57 BCY58 BCY59 2sc 9015 2SC644 CS9015 2N4248 transistor MPS 6518 2SC923 mpsa09 2N3550 scr 4059 2sc539
2SA532

Abstract: BC109 BC184 BC549 BC317 2SC734 Y BC159 8 MS181A BC357 TTP31A 2SC876 ML78M06A
Text: ML79M24A MLV-10-4R-6G MLV-10- G MLV-IO-G/O MLV-10- G /R MLV-IO-O MLV-IO-OR MLV-10-R MLV-10-S MLV-10-U PAGE 119


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PDF 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N4004 1N4005 2SA532 BC109 BC184 BC549 BC317 2SC734 Y BC159 8 MS181A BC357 TTP31A 2SC876 ML78M06A
2003 - mg75n2ys40

Abstract: 2N3055 TOSHIBA mg150n2ys40 TOSHIBA 2N3055 TLR103 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Text: No file text available


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PDF 050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TOSHIBA 2N3055 TLR103 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
2003 - TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Text: (sat) (V) fT (MHz) 1 L/S General-Purpose 10 F/ G General-purpose Low , (MHz) 1 L/S General-Purpose 10 F/ G General-purpose con-saturation VCE (V , 10 80 2 10 F/ G General-purpose con-saturation (V) PD (mW) : hFE <, MOS , F/ G Muting and Switch High hFE High Speed Switch General-purpose low saturation : hFE , 2SA1953 12 500 150 300~1000 2 10 0.25 200 10 F G Low sturation 5


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PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 tungsram AC125UZ DG 7-123 PENTODE pl 508 ot-400 tungsram
Text: 25 25 24 24 SYM BO LS CaKi Cbaoii C rm Ci c a p a c ita n c e , ano de to g rid c a p a c ita n c , , i.e.- ca p ac ita n c e be tw een g rid N o . 1 and a ll o th e r ele c tro des e x cep t anode output c a p a c ita n c e , i.e . capacitance betw een ano de and a ll o th e r ele c tro des e x cep t g , g u la to rs: a r c c u rre n t p e a k a n o d e c u rre n t h e a te r c u rre n t d ire c t c u rre n t to g rid s N o . 2 . . .4 catho d e c u rre n t c u r r e n t to flu o re sce n t screen m a x


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PDF 76665N 76889N MA748PC MA709PC jA710PC A711PC iA712PC A723PC HA741PC A747PC AC125K 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 tungsram AC125UZ DG 7-123 PENTODE pl 508 ot-400 tungsram
hep 154 silicon diode

Abstract: zy 406 transistor hep R1751 motorola HEP 801 hep 154 diode triac zd 607 2sb337 F82Z hep 230 pnp RS5743.3
Text: Semiconductor Packaging Index D IM E N SIO N S AND O U T L IN E D R A W IN G S FO R A L L C A S E S R E F E R E N C E D IN T H E F O LL O W ­ ING C H A R T A R E SHOWN ON P A G E S 5, 6, AND 7. CASE ST Y , 92 310 311 312 320 340 TO-92 (J) TO-92A (B) Case 171 TO-92 ( G ) Case 86 (B) 51 52 , -21 DO-21 DO-5 DO-5 DO-5 DO-5 DO-5 DO-5 DO-5 TO-92 ( G ) TO-92 ( G ) TO-92 ( G ) TO-92 ( G , ) Field Effect Transistor-VHF/UI IF N-Channel Field Effect Transistor— RF-P-Channel MOS FET-D ual G


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PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor hep R1751 motorola HEP 801 hep 154 diode triac zd 607 2sb337 F82Z hep 230 pnp RS5743.3
sx3704

Abstract: AP239 Transistor 80139 8C547 2N50B IN2222A 6C131C radio AC176 AC126 sft353 2N2064
Text: dual silicon transistor FET field effect transistor G germanium transistor GD germanium Darlington , Indus, de Liaisons Electriques Solitron Devices Sescosem (Thomson - CSF) Silec Semiconductor S G S (Ates , AC120 J j S $ $ s s s $ s s s s s s s s s G M A N U FA C i A M ER IC A N JAPAN ESE U SE , 2N3823 MPF286 A747 A747 A747 N N N P AM AM AM TF 8047 8049 8049 AC173 AC 163VI G p TF G P PH, V. MU. MB G G EURO PEAN N N N N P P NT p S G P S G p s G P TH. AE G P TH. AE G P TH. AE


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PDF
st178

Abstract: CK705 diode E1110 ME1120 TE1088 ecg semiconductor replacement guide CS1237 1N733A 1N942 Delco DTG-110B transistor
Text: AMBIENT UNLESS OTHERWISE NOTED E m itte r Ita g e 'E B O ) M ax. C o lle c to r C u rre n t , u e n c y (S e e N o te s ) T y p ic a l C u rre n t G ain ( H f e ) P ackage O u tlin e * D raw in g 5MHz® 40 (at 455 KHz) TO-5 Fig. 1 ECG100 150 Mw 5MHz® 40 (at , TRANSISTORS—N—Channel Junction Types Gate-Soui B reakdow n V V (B R ) g : (V o lts ) Type A p p lic a tio n , lta g e VDS (V o lts ) C u rre n t (M A d .c .) ECG SEMICONDUCTOR REPLACEMENT GUIDE MAXIMUM


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PDF Sylvan58MC 09A001-00 66X0003-001 50746A 68X0003 68X0003-001 T-E0137 93B3-3 93B3-4 st178 CK705 diode E1110 ME1120 TE1088 ecg semiconductor replacement guide CS1237 1N733A 1N942 Delco DTG-110B transistor
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