The Datasheet Archive

2SC3870 datasheet (5)

Part ECAD Model Manufacturer Description Type PDF
2SC3870 2SC3870 ECAD Model Panasonic Silicon NPN triple diffusion type Original PDF
2SC3870 2SC3870 ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
2SC3870 2SC3870 ECAD Model Others Transistor Substitution Data Book 1993 Scan PDF
2SC3870 2SC3870 ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SC3870 2SC3870 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF

2SC3870 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2SC3870

Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SC3870 Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High breakdown voltage ·Wide area of safe operation APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 , Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC3870 Silicon , PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 2SC3870 -


Original
PDF 2SC3870 O-220Fa 2SC3870
2SC3870

Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification 2SC3870 Silicon NPN Power Transistors DESCRIPTION With TO-220Fa package High breakdown voltage Wide area of safe operation APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 , Inchange Semiconductor Product Specification 2SC3870 Silicon NPN Power Transistors , =0.6A;IB2=-1.2A VCC=150V 0.7 s Inchange Semiconductor Product Specification 2SC3870


Original
PDF 2SC3870 O-220Fa 2SC3870
2005 - 2SC3870

Abstract: No abstract text available
Text: JMnic Product Specification 2SC3870 Silicon NPN Power Transistors DESCRIPTION With TO-220Fa package High breakdown voltage Wide area of safe operation APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter , Storage temperature -55~150 JMnic Product Specification 2SC3870 Silicon NPN Power , Product Specification 2SC3870 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline


Original
PDF 2SC3870 O-220Fa 2SC3870
2SC3870

Abstract: pnp 500v
Text: Power Transistors 2SC3870 2SC3870 Silicon PNP Triple-Diffused Planar Type High Breakdown Voltage, High Speed Switching ■Features • High speed switching • High collector-base voltage (V.cbo) • Wide area of safety operation (ASO) • "Full Pack" package for simplified mounting on a , ´SE ooibsoi —498 — This Material Copyrighted By Its Respective Manufacturer Power Transistors 2SC3870 , Material Copyrighted By Its Respective Manufacturer Power Transistors 2SC3870 Safety operation


OCR Scan
PDF 2SC3870 200aH 2SC3870 pnp 500v
2SC3763

Abstract: 2SD1267A 3844 3841 2SC3536 2SC3855 RT1N140C 2SC3691 3845 3843
Text: - 174 - a s Type No. tt « Manuf. = m SANYO x £ TOSHIBA b m NEC b ÍL HITACHI * ± a FUJITSU fci t MATSDSHITA - s MITSUBISHI □ — A ROHM 2SC 3828 2SC4085 2SC4415 2SC 3829 ta t 2SC3356 2SC3513 2SC 3830 -y-vítv 2SC3087 2SC2335 2SC3870 2SC 3831 v-yry 2SC3090 2SC3536 2SC3872 2SC 3832 ✓ v-yry 2SC3039 2SC2335 2SC2898 2SC3870 2SC 3833 ^ y-yry 2SC3042 2SC3435 2SC3336 2SC3873 2SC 3834 "tí" v" 2SD866Á 2SC4846 2SC 3835 ¡ ■«•vírv 2SC2486


OCR Scan
PDF 2SC4085 2SC4415 2SC3356 2SC3513 2SC3087 2SC2335 2SC3870 2SC3090 2SC3536 2SC3872 2SC3763 2SD1267A 3844 3841 2SC3536 2SC3855 RT1N140C 2SC3691 3845 3843
4336

Abstract: 4339 2SC4846 2SD1634 2SC3303 2SC3346 2SC2735 2SC3718 2SC3142 2SC3258
Text: m 2SC4324 2SC4325 2SC4326 2SC4327 2SC4328 2SC4329 2SC4330 « tt Manuf. H SANYO & ® TOSHIBA S b m. NEC 2SC4095 T y p e No. B ±L HITACHI g ± FU J I T S U m të T MA T S U S H I T A MITSUBISHI - ROHM A x s x s -A 2SC4871 2SC3142 2SC3718 2SD1412 2SC3258 2SD843 2SC3345 2SD1816 2SD1816 2SC3303 2SC3303 2SC4228 2SC2735 2SC2847 2SD1444 2SC3869 2SC3870 2SC3ST i 2SC3869 2SC3869 2SC3870 2SC3869 2SD1411 2SC3710 2SC3870 2SC3871 2SC4500 2SD2124 2SD1260 2SD1260


OCR Scan
PDF 2SC4324 2SC4325 2SC4326 2SC4327 2SC4328 2SC4329 2SC4330 2SC4095 2SC4871 2SC3142 4336 4339 2SC4846 2SD1634 2SC3303 2SC3346 2SC2735 2SC3718 2SC3258
1999 - Not Available

Abstract: No abstract text available
Text: Power Transistors 2SC3870 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 4.2±0.2 Parameter Symbol VCBO VCES VCEO VEBO ICP IC IB Collector to base voltage Collector to emitter voltage Emitter to , =300mA 250mA 200mA 3 150mA 100mA 2 80mA 60mA 40mA 20mA 2SC3870 IC - VCE Collector to emitter saturation , =200µH IC/IB=5 (2IB1=­IB2) TC=25°C 2SC3870 Reverse bias ASO measuring circuit L coil IB1 Vin T.U.T IC


Original
PDF 2SC3870
2SD3330

Abstract: 2SD661A 2SD333 2sc2673 RT1N144C DTC144GS 8T1N144S 2SD638 2SD637 2SC3870
Text: 2SC3625 2SC3870 2SC 4056 J STRTC 2SC4162 2SC3626 2SC3870 2SC 4057 J 2SC4459 2SC2555 2SC3870 2SC 4058 é frlbt: 2SC4459 2SC4157 2SC3872 2SC 4059 2SC4460 2SC3874 2SC 4060


OCR Scan
PDF 2SD661A 2SC1914A 2SC1613A 2SD662 2SC1651 2SD734 2SD638 2SC3581 2SC1652 2SD3330 2SD333 2sc2673 RT1N144C DTC144GS 8T1N144S 2SD637 2SC3870
2SC2802

Abstract: 2SC3626 2SC3870 2SC4977 2SD2185 2SC3124 2sc3571 2SC4161 2SC4335 2SD1328
Text: - 204 - S « Type No. tt € Manuf. H SANYO * TOSHIBA a m NEC 0 ÍL HITACHI ■M ± a FUJITSU fö T MATSUSHITA H * MITSUBISHI □ — A ROHM 2SC 4975 fô T 2SC4269 2SC3124 2SC2736 2SC 4976 = # 2SC4203 2SC2802 2SD1112 2SC 4977 ^ *±W* 2SC4161 2SC3626 2SC3571 2SC3870 2SC 4981 STSTC 2SD2203 2SD1411 2SC4335 2SD1271 2SC 4983 H m 2SC3265 2SD1328 2SC 4984 H 'M 2SD1614 2SD1367 2SD2185


OCR Scan
PDF 2SC4269 2SC3124 2SC2736 2SC4203 2SC2802 2SD1112 2SC4161 2SC3626 2SC3571 2SC3870 2SC2802 2SC3870 2SC4977 2SD2185 2SC3124 2sc3571 2SC4335 2SD1328
1999 - 2SC3870

Abstract: No abstract text available
Text: Power Transistors 2SC3870 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm q 0.7±0.1 7.5±0.2 4.2±0.2 2.7±0.2 3.1±0.1 s Absolute Maximum Ratings 14.0±0.5 4.0 q High-speed switching High collector to base voltage VCBO Wide , 1 Power Transistors 2SC3870 IC - VCE TC=25°C (1) TC=Ta (2) With a 100 × 100 × 2mm Al , Transistors 2SC3870 Area of safe operation, reverse bias ASO 16 ICP Lcoil=200µH IC/IB=5 (2IB1


Original
PDF 2SC3870 2SC3870
f 4558

Abstract: 4558 fa 4558 2SC4588 4558, 4556 4558 nec 2SD2076 NEC 4559 2SC4420 2SC3425
Text: 2SC4162 2SC3526 2SC3870 2SC 4557 / y-yry 2SC4459 2SC3626 2SC3872 2SC 4558 j ■y-virv 2SD2076


OCR Scan
PDF 2SC3075 2SC3748 2SD1408 2SD1270 2SC4596 2SC3747 2SD1411 2SD1271 2SC3709 f 4558 4558 fa 4558 2SC4588 4558, 4556 4558 nec 2SD2076 NEC 4559 2SC4420 2SC3425
tt 3043

Abstract: upa74ha 2SC3055 2SC2320 2SD2172 3072 rohm 2sc2335 PA74HA 2SC3271 N 2SC2818
Text: 2SC3870 2SC3870 2SC3871 2SC2412K 2SC2413K 2SC3968 2SC3271 2SD 2132 2SD 2227S 2SD2172 2SD17SO 2SD


OCR Scan
PDF 2SC2518 2SC2335 2SC3040 2SC3042 2SC1868 2SC2751 2SC1871A 2SC2613 tt 3043 upa74ha 2SC3055 2SC2320 2SD2172 3072 rohm 2sc2335 PA74HA 2SC3271 N 2SC2818
Not Available

Abstract: No abstract text available
Text: 2SC3870 Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)400 V(BR)CBO (V)500 I(C) Max. (A)7 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)500 V(CE)sat Max. (V)1 @I(C) (A) (Test Condition)600m @I(B) (A) (Test Condition)3 h(FE) Min. Current gain.8 h(FE) Max. Current gain. @I(C) (A) (Test Condition)5 @V(CE) (V) (Test Condition)5 f(T) Min. (Hz) Transition Freq30MÂ @I(C) (A) (Test Condition)500m @V(CE) (V) (Test


Original
PDF 2SC3870 Freq30MÃ
2SC3883

Abstract: 2S-C3883 2SC3888 2SC3881 2SC3858 2SC3884 2SC3885 2sc3886 2SC3887 2SC3855
Text: 5 0.1 1 1.5 2 0. 4 2SC3870 KT HS SW 500 400 7 2 40 100 500 15 5 0.1 1 1.5 3 0. 6 2SC3871 KT HS SW , -220F(a) BCE 2SC3870 25* 10 0. 5 0.7 0.3 2 (T0-220F(a) BCE 2SC3871 25* 10 0.5 0.7 0.3 2


OCR Scan
PDF 2SC3853 2SC3854 2SC3855 2SC3856 2SC3857 2SC3858 2SC3859 2SC3860 2SC3874 SC-65 2SC3883 2S-C3883 2SC3888 2SC3881 2SC3858 2SC3884 2SC3885 2sc3886 2SC3887 2SC3855
2SC5282

Abstract: No abstract text available
Text: 2SC5032 2SC4953 2SC5104 2SC3869 2SC4026 2SC4961 2SC3870 A 2SC5217 2SC4559 2SC5034 2SC3871 2SC3872 2SC5158


OCR Scan
PDF T0220F O-220E O-220D 2SC4768 2SC3868 2SC5063 2SC4533 2SC5032 2SC4953 2SC5104 2SC5282
nec 2501

Abstract: nec 2502 NEC 2505 NEC 2504 NEC 2506 2482 H 2SC2534 nec 2508 2SC3660 2SC1555
Text: 2SC3971 2SC3870 2SC2739 2SC2740 2SC3128 2SC3128 2SC2671(H) 2SC267KH) 2SC3242 2SC4205 2SA1217 2SD794A


OCR Scan
PDF 2SC2473 2SC2474 2SC2475 2SC2476 2SC2477 2SC2480 2SC2451 2SC2482 2SD2483 2SC2484 nec 2501 nec 2502 NEC 2505 NEC 2504 NEC 2506 2482 H 2SC2534 nec 2508 2SC3660 2SC1555
nec 2401

Abstract: nec 2405 NEC 2415 nec 2412 2SC2509 2SC2320 2SC1218 2sc2312 2SC2724 2SC2508
Text: A - A A A A 2SC2671(H> 2SC2634 2SC1359 2SC1317 2SD601 2SC2295 2SC3868 2SC3870 2SC3210 2SC3928


OCR Scan
PDF 2SC2387 2SC3040 2SC2740 2SC2631 2SC2634 2SC2139 2SC2362K 2SC2362 2SC2286-KA 2SC2380 nec 2401 nec 2405 NEC 2415 nec 2412 2SC2509 2SC2320 2SC1218 2sc2312 2SC2724 2SC2508
NEC 2706

Abstract: 2SC1971 nec 2741 2SC2283 2SD810 2SC3359 KA 2717 2SC1815 2SC3012 2SC2645
Text: 2SC2613 2SC3870 2SC 2740 te T 2SC3277 2SC3365 2SC3210 2SC 2741 «±» 2SC22S6-KA/MA 2SC


OCR Scan
PDF 2SD1047 2SC3182N 2SC3012 2SD1935 2SD810 2SD919 2SC1741S 2SC2281 2SC1971 2SC4639 NEC 2706 2SC1971 nec 2741 2SC2283 2SD810 2SC3359 KA 2717 2SC1815 2SC3012 2SC2645
1999 - 2SC3870

Abstract: No abstract text available
Text: Power Transistors 2SC3870 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching M Di ain sc te on na tin nc ue e/ d Unit: mm 0.7±0.1 4.2±0.2 7.5±0.2 3.1±0.1 s Absolute Maximum Ratings 14.0±0.5 4.0 q High-speed switching High collector to , µs 2 µs 0.3 µs 1 Power Transistors 2SC3870 IC - VCE TC=25°C (1) TC=Ta (2 , ) Power Transistors 2SC3870 Area of safe operation, reverse bias ASO 16 ICP Lcoil=200µH IC


Original
PDF 2SC3870 2SC3870
2SC4420

Abstract: 2sc5158
Text: 7 <1 3 600 0.3 2SC3870 A 2SC5217 2SC5034 2SC4687 2SC4621 2SC5160 500 400


OCR Scan
PDF O-220F O-220E O-220D 2SC4768 2SC3868 2SC5032 2SC4953 2SC5063 2SC5104 2SC4533 2SC4420 2sc5158
4946

Abstract: me 4946 2SC5020 4947 an 4953 4953 2SC3124 2SC3310 2SC4639 4336
Text: 2SC2553 2SC2518 2SC2613 2SC3869 2SC 4947 2SC4106 2SC2335 2SC2898 2SC3870 2SC 4948 SÎBTC 2SC4107


OCR Scan
PDF 2SC4S39 2SC4808 2SC4931 2SC5007 2SC4805 2SC4555 2SC4118 2SD2228 2SD1820 2SC3440 4946 me 4946 2SC5020 4947 an 4953 4953 2SC3124 2SC3310 2SC4639 4336
2SC2038

Abstract: 4835 4816 2SD1415 4808 4828 4833 2SC4516 2SC4328 4836
Text: - 200 - s « Type No. tt « Manuf. H n SANYO * s TOSHIBA b m NEC S it HITACHI * ± as FUJITSU k t MATSUSHITA 3 » MITSUBISHI D - A ROHM 2SC 4808 K T 2SC4839 2SC 4810 B « 2SD2157 2SD2043 2 SC 4811 B « 2SD2214 2SD2307 2SC 4815 ^ s a 2SD2137 2SC2038 2SC 4816 B S 2SD1440A 2SD2036 2 SC 4817 B S 2SD1270 2 SC 4818 B ■2SD1747 2SC 4820 X ■y-ví7-v 2SC3750 2SC3626 2SC3870 2SC 4828 B it 2SC3789 2SC2371 2SC4717 2SC3271F 2SC 4830 M. 2 2SD1656


OCR Scan
PDF 2SC4839 2SD2157 2SD2043 2SD2214 2SD2307 2SD2137 2SC2038 2SD1440A 2SD2036 2SD1270 2SC2038 4835 4816 2SD1415 4808 4828 4833 2SC4516 2SC4328 4836
k 3878

Abstract: t 3866 2SC3759 2SD1847 2sc4291 2SC4423 2sc3866 2SC3435 2sc3883 2SC3729
Text: 3890 V-stry 2SC3039 2SC3497 2SC3574 2SC3870 ¡se mt M £ 2SC4122 2SC3392A 2SM84S 2SC 3892 s


OCR Scan
PDF EN1211 N140S DTC114TS 2SC2548 2SC2750A 2SC3841 2SC3867 2SC3130 RN1405 RT1N234C k 3878 t 3866 2SC3759 2SD1847 2sc4291 2SC4423 2sc3866 2SC3435 2sc3883 2SC3729
k 2761

Abstract: k 2749 2SC3311 nec 2761 2SC2724 a 2761 2SC3119 2SC3077 Pa75ha 2SC2847
Text: 2SC2733 2SC2735 2SC4229 2SC2736 2SC2820 2SD1274A 2SC3175 2SC3257 2SD884 2SC3870 2SC3128 2SC2671(F) 2SC1359


OCR Scan
PDF 2SC2745 2SC2746 2SC2749 2SC2284A--KA/MA 2SC3277 2SC3090 2SD1238 2SC4424 2SC4460 2SC3365 k 2761 k 2749 2SC3311 nec 2761 2SC2724 a 2761 2SC3119 2SC3077 Pa75ha 2SC2847
2SC3532

Abstract: 2SC3533 2SC4242 2SC4212 2SC3170 2SC3082K 2SC2621 2SC3077 4213 2SC3425
Text: 2SC3979 2SC3980 2SC3981 2SC3982 2SC2735 2SC4261 2SC4126 2SC3704 2SC3870 2SC3931 2SC4239 2SC3932


OCR Scan
PDF 2SC4210 2SC4211 2SD1328 2SD1935 2SC4116 2SC2621 2SC3425 2SC4181 2SC2688 2SD1781K 2SC3532 2SC3533 2SC4242 2SC4212 2SC3170 2SC3082K 2SC3077 4213
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