The Datasheet Archive

2SC3757 datasheet (13)

Part ECAD Model Manufacturer Description Type PDF
2SC3757 2SC3757 ECAD Model Panasonic Silicon NPN epitaxial planer type Original PDF
2SC3757 2SC3757 ECAD Model Panasonic NPN Transistor Original PDF
2SC3757 2SC3757 ECAD Model Panasonic Silicon NPN epitaxial planer type Original PDF
2SC3757 2SC3757 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SC3757 2SC3757 ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
2SC3757 2SC3757 ECAD Model Others Transistor Substitution Data Book 1993 Scan PDF
2SC3757 2SC3757 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SC3757 2SC3757 ECAD Model Panasonic Transistor Selection Guide Scan PDF
2SC37570RL 2SC37570RL ECAD Model Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 40VCEO 100MA MINI-3P Original PDF
2SC37572YQ 2SC37572YQ ECAD Model Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
2SC37572YR 2SC37572YR ECAD Model Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
2SC3757Q 2SC3757Q ECAD Model Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
2SC3757R 2SC3757R ECAD Model Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF

2SC3757 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - transistor marking 2y

Abstract: No abstract text available
Text: Transistor 2SC3757 Silicon NPN epitaxial planer type For high speed switching Unit: mm 2.8 ­0.3 +0.2 s Features q q q 0.65±0.15 +0.25 1.5 ­0.05 0.65±0.15 q High-speed switching. Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Allowing pair , 2SC3757 PC - Ta tstg Test Circuit 0.1µF 1k Vout 240 Collector power dissipation PC (mW) 200


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PDF 2SC3757 2SA1738. transistor marking 2y
2SA1738

Abstract: 2SC3757
Text: Transistor 2SC3757 Silicon NPN epitaxial planer type For high speed switching Unit: mm 0.40+0.10 ñ0.05 0.16+0.10 -0.06 q q 0.4±0.2 High-speed switching. Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Allowing pair use with 2SA1738. 5° q , ns Transistor 2SC3757 Switching time measurement circuit ton, toff Test Circuit PC -


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PDF 2SC3757 2SA1738. 2SA1738 2SC3757
2004 - 2SC3757

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC3757 Silicon NPN epitaxial planar type For high-speed switching Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 ­0.05 Features 3 1.9±0.1 40 V VCES 40 V Peak collector current VEBO 5 V IC Collector current 100 mA ICP mW Tj Storage , SJC00136CED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SC3757 PC Ta


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PDF 2002/95/EC) 2SC3757 SC-59 2SC3757
2000 - 2SC3757

Abstract: 2SA1738
Text: Transistors 2SC3757 Silicon NPN epitaxial planer type Unit: mm For high speed switching 0.40+0.10 ­0.05 0.16+0.10 ­0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 ­0.05 Rating Unit VCBO 40 V Collector to emitter voltage VCES 40 V Emitter to base voltage VEBO 5 V Peak collector current ICP 300 mA Collector current IC 100 mA Collector , 2YQ 2YR 1 2SC3757 Transistors PC Ta Switching time measurement circuit ton , toff


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PDF 2SC3757 2SC3757 2SA1738
2004 - 2SC3757

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC3757 Silicon NPN epitaxial planar type For high-speed switching Unit: mm 0.40+0.10 ­0.05 Features 0.16+0.10 ­0.06 0.4±0.2 5° 1.50+0.25 ­0.05 2.8+0.2 ­0.3 3 · Low collector-emitter saturation voltage VCE(sat) · Mini type package, allowing downsizing of the equipment and automatic , /95/EC). 2SC3757 PC Ta Switching time measurement circuit tstg test circuit 0.1 µF 240


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PDF 2002/95/EC) 2SC3757 2SC3757
2SC4290A

Abstract: C 4927 2SD2356 4894 2SC4289 2SD1407 2SC4911K 2SC4289A 2SC3997 4902
Text: 2SC4168 2SC3437 2SC1621 2SC3757 2SC3440 2SC 4912 □ —a 2SC4443 2SC4213 2SC4175 2SC3938 2SC


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PDF 2SC4453 2SC343Ã 2SC3052 2SC4911K 2SD1828 2SD1407 2SD2161 2SD2113 2SD1633 2SC4289A 2SC4290A C 4927 2SD2356 4894 2SC4289 2SC4911K 2SC4289A 2SC3997 4902
2000 - 2SA1738

Abstract: 2SC3757
Text: Transistors 2SC3757 Silicon NPN epitaxial planer type Unit: mm For high speed switching 0.40+0.10 ­0.05 0.16+0.10 ­0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 ­0.05 Rating Unit VCBO 40 V Collector to emitter voltage VCES 40 V Emitter to base voltage VEBO 5 V Peak collector current ICP 300 mA Collector current IC 100 mA Collector , 2YQ 2YR 1 2SC3757 Transistors PC Ta Switching time measurement circuit ton , toff


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PDF 2SC3757 2SA1738 2SC3757
2004 - 2SC3757

Abstract: No abstract text available
Text: Transistors 2SC3757 Silicon NPN epitaxial planar type For high-speed switching Unit: mm 0.40+0.10 ­0.05 Features 0.16+0.10 ­0.06 0.4±0.2 5° 1.50+0.25 ­0.05 2.8+0.2 ­0.3 3 · Low collector-emitter saturation voltage VCE(sat) · Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing (0.95) (0.95 , hFE 60 to 120 90 to 200 Publication date: February 2004 SJC00136CED 1 2SC3757 PC


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PDF 2SC3757 2SC3757
2003 - Not Available

Abstract: No abstract text available
Text: Transistors 2SC3757 Silicon NPN epitaxial planar type For high-speed switching Features · Low collector-emitter saturation voltage VCE(sat) · Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing 0.40+0.10 ­0.05 3 1.50+0.25 ­0.05 2.8+0.2 ­0.3 Unit: mm 0.16+0.10 ­0.06 1 2 (0.65) (0.95) (0.95) 1.9±0.1 , 2SC3757 Switching time measurement circuit ton , toff test circuit 220 VIN = 10 V 3.3 k 50 3.3 k VBB


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PDF 2SC3757
2SC3729

Abstract: 2SC3735 2SA1467 2SC3733 2SC3732 2SC3731 2SC3730 2SC3728 2sc3743 2SC3742
Text: 1.5 0. 3 2SC3757 ffiT HS SW 40 0.1 0. 2 0.1 40 60 320 1 0.01 0. 25 1 0.01 0. 001 2SC3762 a® HS , 0.01 0.01* 6 (SC-59A) EBC 2SC3757 1 0.3 1.5 (MP-85) BCE 2SC3762 0.5 5* io-m


OCR Scan
PDF 2SC3728 2SC3729 2SC3730 2SC3731 2SC3732 2SC3733 2SC3734 SC-59A) 2SC3757 MP-85) 2SC3735 2SA1467 2sc3743 2SC3742
2004 - Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC3757 Silicon NPN epitaxial planar type For high-speed switching Features · Low collector-emitter saturation voltage VCE(sat) · Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing 0.40+0.10 ­0.05 3 1.50+0.25 ­0.05 2.8+0.2 ­0.3 Unit: mm , 2SC3757 Switching time measurement circuit ton , toff test circuit 220 VIN = 10 V 3.3 k 50 3.3 k VBB


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PDF 2002/95/EC) 2SC3757
25c3356

Abstract: 2SC3170 3519A 2SD1431 2SC2376 2SC3303 2sc3153 2sc3743 2SC3356 2SC3477
Text: 2SC 3521 0 ìl 2SC2712 2SC3757 2SC 3522 TDK 2SC3039 2SC3625 2SC2335 2SC2898 2SC3170 2SC


OCR Scan
PDF ZSC4161 2SC3571 2SC3170 2SC3137 2SC3477 2SC2376 2SC2258 2SC3272 ZSC2258 25c3356 2SC3170 3519A 2SD1431 2SC2376 2SC3303 2sc3153 2sc3743 2SC3356 2SC3477
2SC3757

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC3757 Silicon NPN epitaxial planar type For high-speed switching Unit: mm 0.40+0.10 ­0.05 Features 0.16+0.10 ­0.06 5° 2.8+0.2 ­0.3 1.50+0.25 ­0.05 Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro th u e n w er fo fo ot sin in r y r a av g fo ou n a o rm , /95/EC). 2SC3757 PC Ta Switching time measurement circuit tstg test circuit 0.1 µF 240


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PDF 2002/95/EC) 2SC3757 2SC3757
2SC4973

Abstract: 2SA1323 2SC1047 12SC1 2SA838 2SC4782 2SC4655 2SC3938 2SC4716 2SA1806
Text: Transistors (Selection Guide by Applications and Functions) # High Speed Switch -VCO and High Frequency Type Application Functions Package (No.) VcEO VcEs" (V) lc (mA) ts (ns) SS Mini Type (D1) S Mini Type (D5) Mini Type (D10) T Mini Type (D19) TO-92 (D49) High speed switch VCO and high freq. type 2SA1806 2SA1739 2SA1738 15 50 19 2SC4691 2SC3938 2SC3757 A 2SC4969 2SC3811 40» 100 10 2SC4755 2SC4782 20» 200 7 A Preliminary # High Frequency Amplifiers and Others Package (No


OCR Scan
PDF 2SA1806 2SA1739 2SA1738 2SC4691 2SC3938 2SC3757 2SC4969 2SC3811 2SC4755 2SC4782 2SC4973 2SA1323 2SC1047 12SC1 2SA838 2SC4782 2SC4655 2SC4716
1998 - 2SC3757

Abstract: XP05554
Text: Composite Transistors XP05554 Silicon NPN epitaxial planer transistor Unit: mm For high speed switching q 6 2 5 4 +0.05 2SC3757 × 2 elements 0 to 0.1 q 0.12 ­0.02 s Basic Part Number of Element 0.7±0.1 0.9±0.1 0.2 q For high speed switching. Low collector to emitter saturation voltage VCE(sat). Two elements incorporated into one package. 1 3 2.0±0.1 q 0.425 0.65 s Features 1.25±0.1 0.65 0.425 0.2±0.05 2.1±0.1 s


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PDF XP05554 2SC3757 2SC3757 XP05554
2SA1323

Abstract: 2SC4716 2SA838 2SC5020 2sc2851
Text: Transistors (Selection Guide by Applications and Functions) # High Speed Switch, V C O and High Frequency Equipment Application Functions SS-Mini Type (D1) 2SA1806 2SC4691 Package (No.) S-Mini Type(D5) 2SA1739 2SC3938 2SC4755 2SC5379 2SC5378 Mini Type (D12) 2SA1738 2SC3757 2SC4782 2SC3811 TO-92(D46) VcEO V C ES (V) 15 40° 20" 8 lc (mA) ts (ns) High speed switch VCO and high freq. equipment 50 100 200 80 19 10 7 - # High Frequency Amplifiers and Others Package (No.) Functions SS-Mini


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PDF 2SA1806 2SC4691 2SA1739 2SC3938 2SC4755 2SC5379 2SC5378 2SA1738 2SC3757 2SC4782 2SA1323 2SC4716 2SA838 2SC5020 2sc2851
2SC5021

Abstract: 2SA1888 2sc4973 D49 transistor TS 12164 2SC3757 2SA1806 2SA1738 panasonic silicon can tuner 2SC4969
Text: Transistors (Selection Guide by Applications and Functions) • High Speed Switch -VCO and High Frequency Type Application Functions Package (No.) VcEO VcEs" (V) lc (mA) ts (ns) SS Mini Type (D1) S Mini Type (D5) Mini Type (D10) T Mini Type (D19) TO-92 (D49) High speed switch VCO and high freq. type 2SA1806 2SA1739 2SA1738 15 50 19 2SC4691 2SC3938 2SC3757 A 2SC4969 2SC3811 40" 100 10 2SC4755 2SC4782 20« 200 7 A Preliminary # High Frequency Amplifiers and Others Package (No


OCR Scan
PDF 2SA1806 2SA1739 2SA1738 2SC4691 2SC3938 2SC3757 2SC4969 2SC3811 2SC4755 2SC4782 2SC5021 2SA1888 2sc4973 D49 transistor TS 12164 2SA1738 panasonic silicon can tuner
2sc4973

Abstract: 2SC5020 2SC2671
Text: Transistors (Selection Guide by Applications and Functions) # High Speed Switch · V C O and High Frequency Type Application Functions Package (No.) SS Mini Type (D1) 2SA1806 2SC4691 VCO and high freq. type 2SC4755 A Tentative VcEO S Mini Type (D5) 2SA1739 2SC3938 Mini Type (D12) 2SA1738 2SC3757 2SC4782 T Mini Type (D22) TO-92 (D46) V ces' 1 lc (mA) 50 100 200 ts (ns) (V) 15 High speed switch 19 10 7 A 2SC4969 2SC3811 40» 20« # High Frequency Amplifiers and


OCR Scan
PDF 2SA1806 2SC4691 2SC4755 2SA1739 2SC3938 2SA1738 2SC3757 2SC4782 2SC4969 2SC3811 2sc4973 2SC5020 2SC2671
Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC3757 Silicon NPN epitaxial planar type For high-speed switching Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 ■Features 0.16+0.10 –0.06 0.4±0.2 1.50+0.25 –0.05 5˚ pla d in ea ne clu se pla m d de vis ht ne ai ma s fo tp it f :// ol d d d nte inte , /95/EC). 2SC3757 PC  Ta Switching time measurement circuit tstg test circuit 0.1 µF


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PDF 2002/95/EC) 2SC3757
2SC3170

Abstract: NEC 2SC3358 2sc3904 2sc3358 2SC3357 2SC3505 2SC496 2SC3757 2SC4158 2SC3608
Text: - 16? - m s Type No. a € Manuf. = SANYO TOSHIBA 0 a NEC 0 4 HITACHI » ± a FUJITSU «J T MATSUSHITA H. m MITSUBISHI □ - A ROHM 2SC 3571 J 0 a 2SC3039 ZM,3i II] 2SC 3572 •>' a a 2SC4162 2SC3170 2SC 3 573 0 a 2SC4161 2SC3353 2SC4129 2SC 3574 a a 2SC4161 2SC3170 2SC 3575 ^ 0 a 2SC4162 2SC3170 2SC 3576 . = & 2SC3488 2SD1504 2SD1424 2SC 3577 E T 2SC4428 ZSU376S 2SC 3 578 0 tL 2SC3757 2SC3052 2SC 3579 2SC3212 2SC 3580 H m 2SD400 2SC2703 2SD468


OCR Scan
PDF 2SC3039 2SC4162 2SC3170 2SC4161 2SC3353 2SC4129 2SC3170 NEC 2SC3358 2sc3904 2sc3358 2SC3357 2SC3505 2SC496 2SC3757 2SC4158 2SC3608
1998 - 2SA1738

Abstract: 2SC3757
Text: Transistor 2SA1738 Silicon PNP epitaxial planer type For high speed switching Unit: mm +0.2 2.8 ­0.3 1.45 0.95 3 +0.1 1.9±0.2 0.65±0.15 1 0.95 q +0.2 q 0.65±0.15 High-speed switch (pair with 2SC3757 ) Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.9 ­0.05 q 0.4 ­0.05 s Features +0.25 1.5 ­0.05


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PDF 2SA1738 2SC3757) 200MHz 2SA1738 2SC3757
2SC4969

Abstract: 2SA1323 2sc5021 2SA 10G 2SA838 2SC5020 2SC4973 2SC4670 2SC2851 2sc497
Text: Transistors (Selection Guide by Applications and Functions) High Speed Switch *VCO and High Frequency Type Application Functions Package (No.) VcEO VcES1> (V) lc (mA) ts (ns) SS Mini Type (D1) S Mini Type (D5) Mini Type (D10) T Mini Type (D19) TO-92 (D49) High speed switch VCO and high freq. type 2SA1806 2SA1739 2SA1738 15 50 19 2SC4691 2SC3938 2SC3757 A 2SC4969 2SC3811 401} 100 10 2SC4755 2SC4782 201} 200 7 A Preliminary High Frequency Amplifiers and Others Functions Package (No


OCR Scan
PDF 2SA1806 2SA1739 2SA1738 2SC4691 2SC3938 2SC3757 2SC4969 2SC3811 2SC4755 2SC4782 2SA1323 2sc5021 2SA 10G 2SA838 2SC5020 2SC4973 2SC4670 2SC2851 2sc497
1998 - 2SC3757

Abstract: XP5A554
Text: Composite Transistors XP5A554 Silicon NPN epitaxial planer transistor Unit: mm For high speed switching q 6 2 5 4 2SC3757 × 2 elements s Absolute Maximum Ratings Parameter (Ta=25°C) Symbol Ratings Unit Collector to base voltage VCBO 40 VCES 40 V VEBO 5 V IC 100 mA Peak collector current ICP 300 mA Total power dissipation PT 150 1 : Base (Tr1) 2 : Emitter (Tr1) 3 : Base (Tr2) V Collector to emitter


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PDF XP5A554 2SC3757 2SC3757 XP5A554
1998 - 2SC3757

Abstract: XP1554
Text: Composite Transistors XP1554 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For high speed switching 2.1±0.1 2.0±0.1 2 5 3 4 0.9± 0.1 s Basic Part Number of Element 2SC3757 × 2 elements 0 to 0.1 q 0.7±0.1 +0.05 q 1 0.425 s Absolute Maximum Ratings Parameter 1 : Base (Tr1) 2 : Emitter 3 : Base (Tr2) (Ta=25°C) Symbol Ratings Collector to base voltage VCBO 40 V Collector to emitter voltage VCES 40 V


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PDF XP1554 2SC3757 2SC3757 XP1554
2004 - Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Composite Transistors XP05554 (0.425) Silicon NPN epitaxial planar type 0.2±0.05 Unit: mm 0.12+0.05 ­0.02 For high-speed switching Features · Two elements incorporated into one package · Low collector-emitter saturation voltage VCE(sat) 6 5 4 1.25±0.10 2.1±0.1 1 2 3 (0.65) (0.65) 1.3±0.1 2.0±0.1 10° 0.9±0.1 · 2SC3757 × 2 1: Emitter (Tr1) 2: Base (Tr1) 3: Base (Tr2) EIAJ: SC-88 0 to 0.1 Absolute


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PDF 2002/95/EC) XP05554 2SC3757 SC-88
Supplyframe Tracking Pixel