The Datasheet Archive

2SC3603 datasheet (8)

Part Manufacturer Description Type PDF
2SC3603 NEC Semiconductor Selection Guide 1995 Original PDF
2SC3603 NEC NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION Original PDF
2SC3603 NEC Semiconductor Selection Guide Original PDF
2SC3603 California Eastern Laboratories UHF/Microwave NPN BJT Scan PDF
2SC3603 Others Semiconductor Master Cross Reference Guide Scan PDF
2SC3603 Others The Transistor Manual (Japanese) 1993 Scan PDF
2SC3603 Others High Frequency Device Data Book (Japanese) Scan PDF
2SC3603 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF

2SC3603 Datasheets Context Search

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2SC3603

Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at , August 1996 P Printed in Japan © NEC Corporation 1996 IM E C Note Test block diagram 2SC3603 , 2SC3603 INSERTION GAIN vs. COLLECTOR CURRENT m 2 5 10 20 50 1C - Collector Current , -66 .8 -7 7 .4 -89.1 -103.1 -119.5 -134.0 3 NEC S P AR AM ETER 2SC3603 S 21 - FREQUENCY


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PDF 2SC3603 2SC3603
1997 - 2SC3603

Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for low- PACKAGE , TYP. VCB = 10 V, IE = 0 Emitter Cut-off Current MIN. © 1996 2SC3603 Note Test , Frequency - GHz 30 1 5 10 IC - Collector Current - mA 50 2SC3603 INSERTION GAIN vs , 1.585 1.392 14.3 5.3 .151 .168 39.7 34.8 .232 .254 -119.5 -134.0 3 2SC3603


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PDF 2SC3603 2SC3603
Not Available

Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for low- PACKAGE , Printed in Japan © NEC Corporation 1996 NEC Note 2SC3603 Test block diagram TYPICAL , Collector Current - mA 10 V 50 NEC 2SC3603 INSERTION GAIN vs. COLLECTOR CURRENT m T 3 , 5.3 .168 34.8 .254 -134.0 3 NEC 2SC3603 S PARAM ETER Sue, S2 e-FR EQ U EN C


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PDF 2SC3603 2SC3603
1997 - 2SC3603

Abstract: No abstract text available
Text: . DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE , characteristics in a wide collector current region, and uc t The 2SC3603 is an NPN epitaxial transistor , MIN. © 1996 2SC3603 Note Test block diagram Coax. SW Coax. SW Noise Diode , Frequency - GHz 30 1 5 10 IC - Collector Current - mA 50 2SC3603 INSERTION GAIN vs , 20 VCE = 10 V NOISE FIGURE vs. COLLECTOR CURRENT 6 3 2SC3603 S PARAMETER 1.2 1.0


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2SC1260

Abstract: 2SC1815 2sc1424 2SC944 2SC930 2SC2094 2SC2021 2sc2990 2SC1681 2SC1345
Text: 1558 X 2 2sc3603 2SC 1559 ïE 2SC3603 2sc 1560 s S 2SC1558 2sc 1561 *±ii


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PDF 2SC2102 2SC2888 2SC2990 2SC2094 2SC1260 2SC930 2SC380 2SC923 2SC1345 2SC2021 2SC1260 2SC1815 2sc1424 2SC944 2SC2094 2SC2021 2SC1681 2SC1345
2-4F1C

Abstract: 2SC3600 2SC3597 2SC3596 2SC3595 2SC3602 2SC3623A 2SC3590 2SC3598 2SC3599
Text: 0.05 0.005 2SC3602 JS2 UHF A 25 20 0.02 0.2 0.1 10 40 10 0.002 2SC3603 BS MF LN A 20 12 0.1 0 , «dx) ECEB 2SC3603 8000* 8 0.02 0. 7 NF max 2. 3dB f=2GHz (7«0x) ECEB 2SC3604 5000 10 0.02 1.2


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PDF 2SC3590 2SC3591 2SC3595 2SC3596 2SC3597 2SC3598 2SC3599 052JF5 2SC3615 2SC3616 2-4F1C 2SC3600 2SC3597 2SC3596 2SC3602 2SC3623A 2SC3598
Not Available

Abstract: No abstract text available
Text: . Measured using a single-type device (equivalent to the 2SC3603 ). 3. Measured with a 3-terminal bridge


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PDF 2SC3809 2SC3809
1997 - 2SC3603

Abstract: 2SC3809
Text: single-type device (equivalent to the 2SC3603 ). 3. Measured with a 3-terminal bridge, terminals other than


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PDF 2SC3809 2SC3809 100/Special: 2SC3603
Not Available

Abstract: No abstract text available
Text: single-type device (equivalent to the 2SC3603 ). 3. Measured with a 3-terminal bridge, terminals other than the


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PDF 2SC3809 2SC3809
1998 - nf025

Abstract: NE27283 upc27 NE42484 x-band power transistor 100W P147D 2SK2396 nf025db uPG508 c-band lna chip
Text: 2SC3545 2SC3582 2SC3583 2SC3585 2SC3587 2SC3603 2SC3604 2SC3663 2SC3809 2SC3810 2SC3841 2SC4092 2SC4093 , 2SC3603 2 × 2SC3604 Cc·rbb'=4ps NF=1.5dB NF=1.1dB NF=1.2dB NF=1.8dB Cc·rbb'=9ps NF=3.0dB Cc·rbb'=3.5ps fT , ) Frequency (MHz) 500 2000 4000 2SC3604 2SC3587 2.5 3.5 2SC2148 2SC3603 2SC2149 4.0 CD-ROM X13769XJ2V0CD00 , 5.5 6.0 7.0 8.5 10.0*1 2SC3603 2SC3604 2SC3587 2SC3355 2SC3582 2SC4703 2SC3357 2SC5338 2SC5336 2SC3356 , 2SC3545 2SC3582 2SC3583 2SC3585 2SC3587 2SC3603 2SC3604 2SC3809 2SC3810 2SC3817 2SC4092 2SC4093 2SC4094


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PDF X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 NE42484 x-band power transistor 100W P147D 2SK2396 nf025db uPG508 c-band lna chip
2SC2150

Abstract: 2SC1223 TRANSISTOR 2sC 5250 2sc3604 micro X
Text: A B C H K D Part Num ber 2SC3603 2SC 3604 2SC 3587 M arking 0 2 1 Lot Lot indication is colored


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PDF 2SC3604 2SC3604 2SC3603 2SC2150 2SC1223 TRANSISTOR 2sC 5250 micro X
ne666

Abstract: NEC NE85635 2SC33 NE85600 epitaxial micro-x NE85635 NE856 ka13 NEB5600 UPA810T
Text: 626 0.65 50 120 y yo NE85635 2SC3603 35 MIN T YP 70 M AX N E 85639ft9R 2SC4093 39 MIN T YP 90


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PDF NE856 NE856C0 NE85635 20CTC NE85633 NE86635 NE8S632 ne666 NEC NE85635 2SC33 NE85600 epitaxial micro-x NE85635 ka13 NEB5600 UPA810T
NEC K 2500

Abstract: N transistor NEC K 2500 2SC1223 transistor marking S00 2SC3604 2SC3603 NEC PART NUMBER MARKING NEC marking b 2SC2367 2SC2150
Text: C H K D Part Number 2SC3603 2SC3604 2SC3587 Marking 0 2 1 Lot Lot indication is colored as shown


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PDF 2SC3604 2SC3604 15obots NEC K 2500 N transistor NEC K 2500 2SC1223 transistor marking S00 2SC3603 NEC PART NUMBER MARKING NEC marking b 2SC2367 2SC2150
2012 - 2SK2396

Abstract: PC2763 pc1658 2SC3357 2SC3545 ne27283 UPC1663 2sc2757 2sc5008 2SC2570A
Text: ) 2SC3587(NE68035) 2SC3603 (NE85635) 2SC3604(NE68135) 2SC3663 2SC3809(NE85641) 2SC3810(NE68141) 2SC3841 , 11-28 RF & s 2/2 NF(dB) (MHz) 500 2000 4000 2SC3604 2SC3587 2.5 3.5 2SC2148 2SC3603 4.0 , 2SC5338 2SC3603 2SC3355 2SC3357 2SC5336 2SC3356 2SC4226 2SC4093 2SC5011 2SC5006 2SC5432 2SC3604 2SC3582 , 2SC2586 2SC2762 2SC3218M 2SC3286M 2SC3355 2SC3356 2SC3357 2SC3545 2SC3582 2SC3583 2SC3585 2SC3587 2SC3603


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PDF X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 2SC3357 2SC3545 ne27283 UPC1663 2sc2757 2sc5008 2SC2570A
NE99532

Abstract: 2sc3358 NE3005B20 NE85637 NE4201 NE1010E ne3005b-20 2SC3358 transistor ne3005b NE1005E
Text: 2SC3355 32 NE85633 2SC3356 33 NE85634 2SC3357 34 NE85635 2SC3603 35 NE85637 2SC3358 37 SYMBOLS , 32 NE85633 2SC3356 33 NE85634 2SC3357 34 NE85635 2SC3603 35 NE85637 2SC3358 37 SYMBOLS


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PDF NE856 NE99532 NE32700 NE32702 NE32708 NE32740A NE32740B 2sc3358 NE3005B20 NE85637 NE4201 NE1010E ne3005b-20 2SC3358 transistor ne3005b NE1005E
1997 - 2SC1223

Abstract: 2SC2150 2SC2367 NEC NE "micro x" d NEC NE "micro x" 2SC2585 2SC3604 2SC3603 2SC2149 NE AND micro-X
Text: 2SC3603 0 2SC2149 B 2SC3604 2 2SC2150 C 2SC3587 1 2SC2367 E Marking


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PDF 2SC3604 2SC3604 2SC1223 2SC2150 2SC2367 NEC NE "micro x" d NEC NE "micro x" 2SC2585 2SC3603 2SC2149 NE AND micro-X
1997 - 2SC3603

Abstract: 2SC3809
Text: smaller hFE value of the 2 transistors. 2. Measured using a single-type device (equivalent to the 2SC3603


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1999 - uPD16305

Abstract: uPD63724A UPC5023 upc5024 2SC1940 uPC1237 UPC458 UPC2710 uPD65656 UPD65943
Text: 2SC3357 2SC3545 2SC3582 2SC3583 2SC3585 2SC3587 2SC3603 2SC3604 2SC3663 2SC3809 µPG171 µPA101 µPA102


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PDF PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A UPC5023 upc5024 2SC1940 uPC1237 UPC458 UPC2710 uPD65656 UPD65943
1997 - NT 407 F TRANSISTOR

Abstract: 2SC2150 2SC2585 2SC1223 NEC NE "micro x" NE AND micro-X 2SC2367 2SC3604 NEC NE "micro x" d 2SC3587
Text: . Part Number Marking Part Number 2SC2148 A 2SC3603 0 2SC2149 B 2SC3604 2


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2SC3357

Abstract: 2sc3355 NE8563S
Text: 1.0 1.0 1.0 580 590 200 0.45 200 500 200 50 3.4 13.5 8.5 13 7 120 300 1.0 1.0 NE85635 2SC3603 35 MIN , 1.0 1.0 1.0 580 590 200 0.45 200 500 200 50 3.4 13.5 8.5 13 7 120 300 1.0 1.0 NE85635 2SC3603 35 MIN


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PDF NE856 OT-89) 2SC3357 2sc3355 NE8563S
1999 - uPD72002-11

Abstract: uPD16305 uPC1237 uPD65656 upc1701 2sb1099 2SD1392 uPD78F0841 UPD65625 uPG508
Text: 2SC2351 2SC2954 2SC3355 2SC3356 2SC3357 2SC3545 2SC3582 2SC3583 2SC3585 2SC3587 2SC3603 2SC3604 2SC3663


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PDF PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD72002-11 uPD16305 uPC1237 uPD65656 upc1701 2sb1099 2SD1392 uPD78F0841 UPD65625 uPG508
NEC NE85635

Abstract: 2SC3356 to 92 NE85634 NEC 2501 MF 216 NE85834 TRANSISTOR NEC B77 NE856 2SC3357 2sc3356 NE85635
Text: NE85600 00 (CHIP) NE85632 2SC3355 32 NE85633 2SC3356 33 NE85634 2SC3357 34 NE85635 2SC3603 35


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PDF NE856 NEC NE85635 2SC3356 to 92 NE85634 NEC 2501 MF 216 NE85834 TRANSISTOR NEC B77 2SC3357 2sc3356 NE85635
1993 - 2SK2396A

Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 K2597 k2396 Marking Code SAW MOS transistor
Text: 7.0 2SC3603 2SC3355 8.5 2SC3604 2SC5431 2SC5338 2SC3357 2SC5336 2SC3582 , 10 10 0 1 0.2 0.7 6 10 2SC3603 (NE85635) 20 12 3 580 10 20 , Fig.3 2SC3603 (NE85635) 2.0 11 8 7 2 1.6 2.3 Ga = 12 dB (TYP.) @VCE = 8 V


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PDF P10100EJ6V0SG00 2SK2396A NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 K2597 k2396 Marking Code SAW MOS transistor
2001 - UAA 1006

Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
Text: No file text available


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PDF D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
LB 122 transistor To-92

Abstract: Mje 1532 NE85632 NE85600 NE856 NE85635 NE85618 NE85619 NE85630 2SC5006
Text: NE85639/39R 2SC3603 2SC4093 35 39 MIN TYP MAX MIN TYP MAX 6.5 2.0 7.0 9.0 1.4 1.5


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PDF NE856 NE85600 24-Hour LB 122 transistor To-92 Mje 1532 NE85632 NE85600 NE856 NE85635 NE85618 NE85619 NE85630 2SC5006
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