The Datasheet Archive

2SC3419 datasheet (18)

Part Manufacturer Description Type PDF
2SC3419 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-126(IS); Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: High Frequency Switching Power Transistor; Part Number: 2SA1356 Original PDF
2SC3419 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
2SC3419 Others Transistor Shortform Datasheet & Cross References Scan PDF
2SC3419 Others Japanese Transistor Cross References (2S) Scan PDF
2SC3419 Others Cross Reference Datasheet Scan PDF
2SC3419 Others Catalog Scans - Shortform Datasheet Scan PDF
2SC3419 Others Catalog Scans - Shortform Datasheet Scan PDF
2SC3419 Others Scan PDF
2SC3419 Others The Transistor Manual (Japanese) 1993 Scan PDF
2SC3419 Others Transistor Substitution Data Book 1993 Scan PDF
2SC3419 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SC3419 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SC3419 Toshiba Silicon NPN transistor for medium power amplifier applications Scan PDF
2SC3419 Toshiba TO-126 Package Transistor Scan PDF
2SC3419-O Others Transistor Shortform Datasheet & Cross References Scan PDF
2SC3419O Toshiba Silicon NPN Epitaxial Type Transistor Scan PDF
2SC3419-Y Others Transistor Shortform Datasheet & Cross References Scan PDF
2SC3419Y Toshiba Silicon NPN Epitaxial Type Transistor Scan PDF

2SC3419 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
C3419

Abstract:
Text: 2SC3419 NPN (PCT) 2SC3419 · : mm : VCE (sat) = 0.25 V () · : PC = 1.2 W (Ta = 25°C) · 2SA1356 (Ta = 25°C) · VCBO 40 , JEITA (//) 2-8H1A (/ ) : 0.82 g () ( ) () 1 2006-11-07 2SC3419 (Ta = , O: 70~140, Y: 120~240 C3419 () (: : ) No. 2 2006-11-07 2SC3419 , ) VCEO max 10 · 3 30 100 VCE (V) 2006-11-07 2SC3419 20070701-JA ·


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PDF 2SC3419 2SA1356 20070701-JA C3419 2SC3419 2SA1356
2SC3421

Abstract:
Text: 2SD1288 2 SC 49 4 V-"' X 2 2SD526 2SD1288 2SC 495 3t 2 2SC3419 2SC1162 2SC1226A 2SD1381 2SC 496 ->•"' M £ 2SC3419 2SC1162 2SC1226 2SD1381 2SC 497 ^ M 2SC2235 2SD667A 2SC 498 ^ , 2SC3419 2SC 503 » X 3£ 2SC2235 2SC2061 2SC 504 f 5K S 2SC2235 2SC2061 2SC 505 X S


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PDF 2SC46C 2SC1359 2SC2058 2SC1815 2SC460 2SC1318 2SC1740 2SC1398 2SD1264 2SC2497A 2SC3421 2sd526 2SC46C 2SC4614 2SD467 2sc2061 2SC2060 2sc2233 2SC2497A 2SC3423
2004 - c3419

Abstract:
Text: 2SC3419 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3419 Medium-Power Amplifier Applications. Unit: mm · Low saturation voltage: VCE (sat) = 0.25 V (typ.) · High , 2004-07-07 2SC3419 Marking Lot No. Characteristics indicator C3419 Part No. (or abbreviation , 2SC3419 IC ­ VCE hFE ­ IC 1000 12 10 Common emitter 8 6 600 4 400 VCE = 2 , 100 (V) 2004-07-07 2SC3419 RESTRICTIONS ON PRODUCT USE 030619EAA · The information


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PDF 2SC3419 2SA1356 c3419 2SC3419 2SA1356 MA61
2SC1815

Abstract:
Text: 2 V 2SC1815 1 k 500 µF 470 2SC3419 2 k 4.2 ~70°C (2) 12 V, 1 A 02CZ6.8 , 2SC1815 150 30 80 1.2 k 2SC3419 0.01 µF 250 2SC521A ( 3) Vi 20~25 V 1Z16 4.3 , ~1.5 A) 500 µF 1.5 k 5 k 2SC3419 Vi = 28~38 V 2SC1815 × 2 2SC185 3.9 k ( 4 , 2SC1815 × 2 2SC1815 0.01 µF 4 k 1.5 k 5 k 2SC1815 200 2SC521A ( 4) 2SC3419 Vo


Original
PDF 2SK117 02CZ5 02CZ6 2SC1815 2SC3419 2SC521A 2SC1815 2sk117 1D4B42 2SK30ATM 6D4B41 k 513 2SC185 2SC521A 2SD867 3D4B41
2006 - c3419

Abstract:
Text: 2SC3419 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3419 Medium-Power Amplifier Applications. Unit: mm · · · Low saturation voltage: VCE (sat) = 0.25 V (typ.) (IC = 500 mA, IB = , 2SC3419 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off , )-free finish. Part No. (or abbreviation code) 2 2006-11-09 2SC3419 IC ­ VCE 1000 1000 , ) Collector-emitter voltage VCE (V) 3 2006-11-09 2SC3419 RESTRICTIONS ON PRODUCT USE · The


Original
PDF 2SC3419 2SA1356 c3419
2007 - c3419

Abstract:
Text: 2SC3419 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3419 Medium-Power Amplifier Applications. Unit: mm · Low saturation voltage: VCE (sat) = 0.25 V (typ.) · High , , etc). 1 2006-11-09 2SC3419 Electrical Characteristics (Tc = 25°C) Characteristics , 2SC3419 IC ­ VCE hFE ­ IC 1000 20 800 12 Common emitter Tc = 25°C 10 Common , 3 VCEO max 10 30 100 Collector-emitter voltage VCE (V) 3 2006-11-09 2SC3419


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PDF 2SC3419 2SA1356 c3419 2SC3419 2SA1356
2SA1356

Abstract:
Text: TOSHIBA 2SC3419 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2 S C 3 4 1 9 MEDIUM POWER AMPLIFIER APPLICATIONS. • Low Saturation Voltage : VcE(sat) = 0-25V (Typ.) (IC = 500mA, IB = 50mA) • High Collector Power Dissipation : Pç; = 1.2W (Ta = 25°C) • Complementary to , TOSHIBA 2SC3419 IC - VCE hFE - IC 1000 800 600 400 200 COMMON EMITTER Tc = 25 , 2001-05-24 TOSHIBA 2SC3419 RESTRICTIONS ON PRODUCT USE _000707E • TOSHIBA is continually working to


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PDF 2SC3419 500mA, 2SA1356 2SA1356 2SC3419
Not Available

Abstract:
Text: 2SC3419 TOSHIBA 2SC3419 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Unit in mm M EDIUM PO W ER AM PLIFIER APPLICATIONS. • • • m ä" ìli 1.0MAX. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Ta = 25°C Collector Power Dissipation , 1997 09-01 - 1/2 2SC3419 TOSHIBA IC - VCE hpE - IC COLLECTOR CURRENT Iç (mA) Ic


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PDF 2SC3419 2SA1356 961001EAA2'
2SC1390

Abstract:
Text: 2SC4485 2SC3419 2SC3419 2SD1624 2SC1624 2SCÎ624 2SC1624 2SD821 2SD821 2SC732 2SC2240 2SC941 2SC790(LB


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PDF 2SC1387 2SC1390 2SC1393 2SC1394 2SC1395 2SC1396 2SC1090 2SC1399 2SC1252 2SC1675 2SC1390 2SC1130 2SD331 2SC603 2sc 1416 y 2SC1268 2SC2058 2sc1730 2SC2999
2SC3419

Abstract:
Text: 2SC3419 FEATURES: SILICON NPN EPITAXIAL TYPE MEDIMUM POWER AMPLIFIER APPLICATIONS. Unit in mm 03.i±ai . Low Saturation Voltage : VcE(sat)=0.25V(Typ.) (Ic=500mA, lB=50mA) . High Collector Power Dissipation : Pc=1.2W (Ta=25°C) . Complementary to 2SA1356 2 1.9 MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage , 2SC3419


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PDF 2SC3419 500mA, 2SA1356 500mA 2SC3419
b1375

Abstract:
Text: 2SD880, D2012 2SD526, D1408 2SC3419 2SC3419 2SC3419 2SC3419 2SC2235 2SC2235 2SC2229 2SC2229 2SC3419 , 3SK114 3SK 195 3S K 1 15 - - 3SK121 - - _ 2SC3419 2SC3419 2SA1356 1139 T ype No. BD136(NP


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PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 A1265N 2SA1015 MG100G1AL1
2SC1216

Abstract:
Text: - 112 - * i * * * * * * * * * * * * t ♦ * * * * * m. « Type No. tt S Manuf. H # sanyo * a toshiba b m nec b iL hitachi g ± a fujitsu fé T matsushita z m mitsubishi □ — A rohm 2 sc 1343 (h) b iL 2sd425 2sc 1344 B iL 2sc1570 2sc732tm 2sc1842 2sc2634 2sc2320l 2sc1740ln 2sc 1345 b iL 2sc1570 2sc732tm 2sc1843 2sc2634 2sc2320l 2sc1740ln 2sc 1345k b iL 2sc1740 2sc 1346 fé t 2sd734 2sc3419 2sc2001 2sc1162 2sc1317 2sc2060 2sc 1347 fé t 2sc2274 2sc3419 2sc1162


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PDF 2sd425 2sc1570 2sc732tm 2sc1842 2sc2634 2sc2320l 2sc1740ln 2sc1843 2SC1216 sc 1365 2SC1006 2SC710 2SC945 2SC1740LN 2sc1364 2SC1368B 2sc1162
Not Available

Abstract:
Text: TOSHIBA TOSHIBA TRANSISTOR M E D IU M POWER AMPLIFIER APPLICATIONS. 2SC3419 2SC3419 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Unit in mm 8.3 MAX. S.8 · · · Low Saturation Voltage : VCE (sat)= 0.25V (Typ.) (Ic = 500mA, Ig = 50mA) High Collector Power Dissipation : P q = 1.2W (Ta = 25°C) Complementary to 2SA1356 SYMBOL VCBO VCEO Ve b o 1C 53.1 ± 0 .1 1.0M AX. 1.9M A X. M A X IM U M , TOSHIBA 2SC3419 IC - VCE hFE - IC C OLLECTOR CURRENT CO LLECTO R-EM ITTER VO LTAG E Vqe


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PDF 2SC3419 500mA, 2SA1356 961001EAA2'
2SC3419

Abstract:
Text: TOSHIBA 2SC3419 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2 S C 3 4 1 9 MEDIUM POWER AMPLIFIER APPLICATIONS. • Low Saturation Voltage : VcE(sat) = 0-25V (Typ.) (IC = 500mA, IB = 50mA) • High Collector Power Dissipation : Pç; = 1.2W (Ta = 25°C) • Complementary to 2SA1356 , — 10 — pF (Note) : hFE(1) Classification O : 70-140, Y : 120-240 1 2001-11-05 TOSHIBA 2SC3419 IC , TEMPERATURE. 3~ 1 3 10 30 COLLECTOR-EMITTER VOLTAGE VQE (V) VCEO MAX. 100 2 2001-11-05 TOSHIBA 2SC3419


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PDF 2SC3419 500mA, 2SA1356
2SC2320

Abstract:
Text: 2SC2999 2SC2999 2SC382TM 2SC3419 2SC3419 2SC2562 2SC1815 2SC1815 2SC2120 2SC1627 2SC380TM 2SC380TM 2SC945


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PDF 2SC1818 2SC1819 2SC1820 2SC1822 2SC1823 2SC1824 2SC1825 2SC1826 2SD425 2SC1755 2SC2320 2SD786 2SC4280 2sc1832 2SC 1827 F 2sc738 2SD1203 2sc2631 2SC1831
2SC3419

Abstract:
Text: SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC3419 M E D IU M PO W ER AMPLIFIER APPLICATIONS. · · · Low Saturation Voltage : VCE (sat) = 0-25V (Typ.) (Ic = 500mA, lB = 50mA) High Collector Power Dissipation : P q = 1.2W (Ta = 25°C) Complementary to 2SA1356 SYMBOL VCBO VCEO Ve b o !C Iß PC Tj Tstg RATING 40 40 5 800 80 1.2 5 150 -5 5 -1 5 0 UNIT V V V mA mA W °C °C W eight : 0.82g MIN. TYP. MAX , , f=lM H z Cob O : 70-140, Y : 120~240 V V MHz pF 553 2SC3419 - V ce hFE - lc c


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PDF 2SC3419 500mA, 2SA1356 500mA 2SC3419
mg75n2ys40

Abstract:
Text: 525 [ 10 ] (6) 2SC495 2SC3419 2SC524 2SC3421 2SC780 2SC495 (NP) 2SC3419 2SC525 2SC3421 2SC780A 2SC496 2SC3419 2SC547 2SC780A (G) 2SC496 (NP) 2SC3419 2SC548 2SC780AK 2SC497 2SC2235 2SC549 , 2SC501 2SC2638 2SC2639 2SC553 2SC784TM 2SC1923 2SC502 2SC3419 2SC554 , BD135NP 2SC3419 GT15H101 GT15J101 BD136NP 2SA1356 2SK527 GT15H102 GT15J101


Original
PDF 02BZ2 1S2092 1SZ5759 02CZ2 1S2094 2N3055 02CZ5 1S2095A 2N3713 02Z24A1M mg75n2ys40 MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
2SC3419

Abstract:
Text: TOSHIBA 2SC3419 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2 S C 3 4 1 9 MEDIUM POWER AMPLIFIER APPLICATIONS. • Low Saturation Voltage : VCE (sat) = 0.25V (Typ.) (IC = 500mA, IB = 50mA) • High Collector Power Dissipation : Pç; = 1.2W (Ta = 25°C) • Complementary to 2SA1356 MAXIMUM RATINGS (Ta = 25°C) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base , TOSHIBA Semiconductor Reliability Handbook. 1997-09-01 1/2 TOSHIBA 2SC3419 IC - VCE hFE - IC 1000


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PDF 2SC3419 500mA, 2SA1356 961001EAA2' 2SC3419 2SA1356
2SK 150A

Abstract:
Text: -G -T M 2 S C 3 8 8 A -T M 2SC 2717 2 S C 3 8 8 A -T M 2S C 2717 2SC3419 2SC2235 2SC2235 2SC2229 2SC2229 2SC3419 2SC3423 2SC2233 2SC2120 2SC2120 2SC2120 2SC2120 2SC3421 2SC3421 2SC2242 2SC2242 2SC2242 , 785TM 2SC3419 2SC3419 2SC3419 1030 T y p e No. 2SC786 2SC787 2SC788 2SC789 2SC790 2SC791 , - - 2SC3419 2SC3419 2SA1356 1034 T y p e No. B D 136(N P) BD137 BD 137(N P) BD138 BD


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PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2SK 150A mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 2sk270a 1265N
2SA135

Abstract:
Text: TOSHIBA 2SC3419 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2 S C 3 4 1 9 MEDIUM POWER AMPLIFIER APPLICATIONS. • Low Saturation Voltage : VCE(sat) = 0-25V (Typ.) (IC = 500mA, IB = 50mA) • High Collector Power Dissipation : Pc = 1.2W (Ta = 25°C) • Complementary to 2SA1356 MAXIMUM RATINGS (Ta=25°C) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base , ICminer.com Electronic-Library Service CopyRight 2003 TOSHIBA 2SC3419 IC - VCE hFE - IC H Ä H C£ m D o


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PDF 2SC3419 500mA, 2SA1356 961001EAA2' 2SA135 2SA1356 2SC3419
2SC3431

Abstract:
Text: 300 300 0.1 1. 2 7 0. 1 200 40 320 10 0.01 0.6 1 0.02 0.002 2SC3419 ms PA 40 40 0.8 1. 2 5 1 40 70 , -126) ECB 2SC3417 50 2 0.5 10* 2SA1356 (2-8H1A) ECB 2SC3419 100* 2 0.5 40* (2-8H1A) ECB


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PDF 2SC3379 2SC33S0 2SC3381 2SC3382 2SC3383 2SC3390 2SC3391 520MHz 32dBm 2SC3410 2SC3431 2SC3402 2SC3395 2SC3393 2SC3392 2SC3381
2sc3943

Abstract:
Text: 2SC3707 2SC 4198 □—A 2SC3419 2SC1846 2SC 4199«> •y-y-irv 2SC4430 2SC3536 2SC3509


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PDF 2SC4400 2SC4253 2SC3936 2SC4258 2SC4098 2SC4117 2SD1821 2SC4102 2SC4413 2SD1824 2sc3943 2SC4117 2sc2060 2SC2553 2SC3170 2SC3536 2SC4102 2SC3039 2SC2242
NEC 2SD1564

Abstract:
Text: 2SC4486 2SD1684 2SD1914 2SC4671 2SD1914 2SC3746 2SD1408 2SC3621 2SC3419 2SC3963 2SC3964 2SC3421 2SB1509


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PDF 2SD1986 2SD1987 2SD1988 2SD1989 2SD1990 2SD1991 2SD1992 2SD1993 2SD1994 2SD1995 NEC 2SD1564 2SC3296 2sd2394 2012 NEC 2sd1780 2SD1991R 2SD1276 2SD1217
2SC1634

Abstract:
Text: - 110 - s s Type No. tt € Manuf. = SANYO 3t S TOSHIBA a a NEC b ÍL HITACHI s ± m FUJITSU fâ T MATSUSHITA H m MITSUBISHI □ — A ROHM 2SC 1266 2SC510 2SC 1267 B « 2SC2104 2SC 1268 b b 2SC1236 2SC 1269 b a 2SC1236 2SC 1270 b a 2SC1236 2SC 1271 b a 2SC1236 2SC 1272 b a 2SC1236 2SC 1273 b a 2SC1236 2SC 1274 b a 2SC504 2SC 1276 a a 2SC4455 2SC752(g)TM 2SC64KK) 2SC828 2 SC 1277 b a 2SC3419 2SC3581 2SC1741 2 SC 1278


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PDF 2SC510 2SC2104 2SC1236 2SC504 2SC4455 2SC1634 2SC510 TM 1298 2SC2258 2SC3419 2SC828 2SC1515 1279S 2SC1285
Not Available

Abstract:
Text: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) A U D IO PO W ER AM PLIFIER APPLICATIONS. · · · Low Saturation Voltage : v CE(sat) = -0 .3 2 V (Typ.)(Ic = -500m A , Ig = -50m A ) High Collector Power Dissipation : P c = 1.2W (Ta = 25°C) Complementary to 2SC3419 SYMBOL CHARACTERISTIC Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage Ve b o Collector Current ic Base Current Ib Ta = 25°C Collector Power Dissipation Tc = 25°C PC Junction Temperature Tj Storage Temperature


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PDF -500m 2SC3419 --10mA, 800mA --500mA, --50mA 2SA1356
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