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Part Manufacturer Description Datasheet Download Buy Part
NE85634-T1-RF-A California Eastern Laboratories (CEL) SAME AS 2SC3357 SAME AS 2SC3357
2SC3357-T1-A California Eastern Laboratories (CEL) RF TRANSISTOR NPN SOT-89
2SC3357-T1-RF-A California Eastern Laboratories (CEL) SAME AS NE85634 NPN SILICON MEDI
2SC3357-A California Eastern Laboratories (CEL) RF TRANSISTOR NPN SOT-89
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2SC3357-RK NEC Electronics Group Bristol Electronics 190 $1.50 $0.48
2SC3357-T1 Renesas Electronics Corporation Bristol Electronics 860 - -
2SC3357-T1-A-RF Renesas Electronics Corporation Chip1Stop 1,850 $2.59 $2.02

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2SC3357 datasheet (22)

Part Manufacturer Description Type PDF
2SC3357 Kexin NPN Silicon RF Transistor Original PDF
2SC3357 NEC Semiconductor Selection Guide 1995 Original PDF
2SC3357 NEC NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD Original PDF
2SC3357 NEC Semiconductor Selection Guide Original PDF
2SC3357 TY Semiconductor NPN Silicon RF Transistor - SOT-89 Original PDF
2SC3357 California Eastern Laboratories UHF/Microwave NPN BJT Scan PDF
2SC3357 Others Japanese Transistor Cross References (2S) Scan PDF
2SC3357 Others Semiconductor Master Cross Reference Guide Scan PDF
2SC3357 Others The Transistor Manual (Japanese) 1993 Scan PDF
2SC3357 Others Transistor Substitution Data Book 1993 Scan PDF
2SC3357 Others High Frequency Device Data Book (Japanese) Scan PDF
2SC3357 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SC3357RE NEC NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD Original PDF
2SC3357RE NEC NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-Pin Power Minimold Original PDF
2SC3357RE-T1 NEC NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-Pin Power Minimold Original PDF
2SC3357RF NEC NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-Pin Power Minimold Original PDF
2SC3357RF NEC NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD Original PDF
2SC3357RH NEC NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD Original PDF
2SC3357RH NEC NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-Pin Power Minimold Original PDF
2SC3357RH-T1 NEC NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-Pin Power Minimold Original PDF

2SC3357 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1986 - 2SC3357

Abstract: 2sc3357t1 2SC3357-T1 2SC335 transistor 2SC3357
Text: 2SC3357 25 12 mm 2SC3357-T1 1 k / 25 TA = 25°C ° VCBO , NPN RF NPN Silicon RF Transistor 2SC3357 NPN RF 3 NF = 1.1 dB TYP., Ga = 7.5 dB , Devices 1986, 2003 2SC3357 Rth (j-a) 62.5 °C/W 16 cm2 × 0.7 mm , RH 50100 80160 125250 PU10211JJ01V0DS 2SC3357 TA = 25°C ° vs. vs. 2 f = , (mA) PU10211JJ01V0DS 3 2SC3357 vs. VCE = 10 V f = 1 GHz 6 NF (dB) IM2, IM3 vs


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PDF 2SC3357 PU10211JJ01V0DS OT-89) L03-3798-6372 X03-3798-6783 X044-435-1918 2SC3357 2sc3357t1 2SC3357-T1 2SC335 transistor 2SC3357
1985 - nec 2501

Abstract: 2SC3357 2SC3357-T1 marking 2sc3357 ic nec 2501 nec RF package SOT89 sot89 TRANSISTOR MARKING AV 2sc3357t1
Text: minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC3357 25 pcs (Non reel) · 12 mm wide embossed taping 2SC3357-T1 1 kpcs/reel · Collector face the , DATA SHEET NPN SILICON RF TRANSISTOR 2SC3357 NPN EPITAXIAL SILICON RF TRANSISTOR FOR , Semiconductor Devices 1985, 2003 2SC3357 THERMAL RESISTANCE Parameter Symbol Junction to Ambient , 2SC3357 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) ° REVERSE TRANSFER


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PDF 2SC3357 2SC3357-T1 nec 2501 2SC3357 2SC3357-T1 marking 2sc3357 ic nec 2501 nec RF package SOT89 sot89 TRANSISTOR MARKING AV 2sc3357t1
2SC3357-T1-A

Abstract: No abstract text available
Text: ) • Collector face the perforation side of the tape 2SC3357-A NE85634-T1-A 2SC3357-T1-A , NPN SILICON RF TRANSISTOR NE85634 / 2SC3357 NPN EPITAXIAL SILICON RF TRANSISTOR FOR , major revised points. NE85634 / 2SC3357 THERMAL RESISTANCE Parameter Symbol Junction to , 80 to 160 125 to 250 Data Sheet PU10211EJ01V0DS NE85634 / 2SC3357 TYPICAL CHARACTERISTICS (T A = +25C, unless otherwise specified) Data Sheet PU10211EJ01V0DS 3 NE85634 / 2SC3357


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PDF NE85634 2SC3357 NE85634-A PU10211EJ01V0DS 2SC3357-T1-A
1997 - 2SC3357

Abstract: RF Transistor s-parameter vhf sot89 TRANSISTOR MARKING AV marking 2sc3357 ic 0620
Text: DATA SHEET SILICON TRANSISTOR 2SC3357 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC3357 is an NPN silicon epitaxial transistor designed for (Unit , 1997 N Printed in Japan © 1985 2SC3357 ELECTRICAL CHARACTERISTICS (TA = 25 °C , 2SC3357 DC CURRENT GAIN vs. COLLECTOR CURRENT INSERTION GAIN vs. COLLECTOR CURRENT 200 15 , f = 2 × 200 - 190 MHz 20 30 40 50 60 70 IC-Collector Current-mA 3 2SC3357


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PDF 2SC3357 2SC3357 RF Transistor s-parameter vhf sot89 TRANSISTOR MARKING AV marking 2sc3357 ic 0620
6852 d TRANSISTOR

Abstract: 2SC3357
Text: DATA SHEET SILICON TRANSISTOR 2SC3357 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF , Figure SYM BO L Ic B O 2SC3357 MIN. TYP. MAX. 1.0 1.0 UNIT fiA /jA T EST CO NDITIONS , CURRENT GAIN vs. COLLECTOR CURRENT 200 V ce = 10 V 2SC3357 INSERTION GAIN vs. COLLECTOR CURRENT , 0.398 0.399 0.414 0.440 0.461 0.479 0.499 0.515 0.537 2SC3357 Z S 22 -21.1 -2 5 .3 -2 6 .9 -2 8 .9


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PDF 2SC3357 2SC3357 OT-89) S22e-FREQUENCY 6852 d TRANSISTOR
6852 d TRANSISTOR

Abstract: 2SC3357 DA RH SOT-89 nec 765 Transistor ge 718
Text: DATA SHEET SILICON TRANSISTOR 2SC3357 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION T h e 2SC3357 is an NPN silicon ep itaxia l tra n s is to r de sig n e d for low noise a m p , Insertion Power Gain Noise Figure Noise Figure 1 2SC3357 SYMBOL Ic B O MIN. TYP. MAX. 1.0 , = 10 V 15 2SC3357 INSERTION GAIN vs. COLLECTOR CURRENT V ce = 10 V f = 1.0 GHz Iife-D C , 2SC3357 Z S 12 74.5 77.4 77.5 78.0 78.4 75.7 71.7 73.1 71.3 71.8 I S22 I 0.444 0.398 0.399 0.414


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PDF 2SC3357 2SC3357 6852 d TRANSISTOR DA RH SOT-89 nec 765 Transistor ge 718
1985 - 2SC3357-T1

Abstract: 2SC3357 transistor 2SC3357
Text: minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC3357 25 pcs (Non reel) · 12 mm wide embossed taping 2SC3357-T1 1 kpcs/reel · Collector face the , . DATA SHEET NPN SILICON RF TRANSISTOR 2SC3357 NPN EPITAXIAL SILICON RF TRANSISTOR FOR , Semiconductor Devices 1985, 2003 2SC3357 THERMAL RESISTANCE Parameter Symbol Junction to Ambient , 2SC3357 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) ° REVERSE TRANSFER


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PDF
6852 d TRANSISTOR

Abstract: 2SC3357 3zm-5
Text: SILICON TRANSISTOR 2SC3357 N P N S IL IC O N E P IT A X IA L T R A N S IS T O R PO W E R M IN I M O L D P A C K A G E D IM E N S IO N S in millimeters D E S C R IP T IO N The 2SC3357 is an N P N silicon epitaxial transistor designed for low noise amplifier at V H F , U H F and C A T V , Capacitance-pF 3s 2 z 3 z m5 2SC3357 N O IS E F IG U R E v&. C O LLEC TO R C U R R E N T IN T E R M O D , -2 7 .1 - 3 1 .9 - 3 2 .3 - 3 5 .7 - 3 5 .3 - 3 8 .4 - 3 6 .3 2.-77 2SC3357 S-P A R A M E T


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PDF 2SC3357 2SC3357 6852 d TRANSISTOR 3zm-5
2010 - 2N5715

Abstract: 2N4262 nec RF package SOT89 2SC1255 acrian inc 2n4073 2SC3601E MRF-604 BF844 S02369A
Text: ~Iect 10 15 20 2SC1255 2SC3357 2SC3357 2SC3787 BFS89 BFS89 BFS89 2SCl168 2SC1569 2SC1569


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PDF O-l02 OT-172Al OT-1720 T0-39 O-226M O-226M O-126 OT-89 2N5715 2N4262 nec RF package SOT89 2SC1255 acrian inc 2n4073 2SC3601E MRF-604 BF844 S02369A
2SC4159

Abstract: 2SC3358 2SC 3298 2SC2839 2SD641 2SC2914 2sc3277 2sc3158 2sc3153 2sc2724
Text: 2SC 3301✓ Ä 2 2SC3607 2SC3357 2SC4422 2SC 3302 y 2 2SC3358 2SC3126 2SC2844 2SC 3303 / S


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PDF 2SC3689 2SD801 2SD1459 2SD1587 2SD1264 2SDI763A 2SD1348 2SC1173 2SD1444 2SD1762 2SC4159 2SC3358 2SC 3298 2SC2839 2SD641 2SC2914 2sc3277 2sc3158 2sc3153 2sc2724
2SC3368

Abstract: 2SC3356 to 92 2SC3371 2SA1317 2SC3369 2SC3358 2SC3356 2sc3325 cross 2SC3331 2SC3324
Text: 2SC3356 HS HF LN A 20 12 0.1 0. 2 1 10 50 300 10 0.02 2SC3357 HS HF LN A 20 12 0.1 2 1 10 50 300 10 , SC—62 ECB 2SC3357 7000* 10 0.02 1 NF max 2dB f=lGHz (f al i) EBEC 2SC3358 160* 10 0.01 0.15


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PDF 2SC3322 2SC3324 2SC3325 2SC3326 2SC3327 2SC3328 2SC3329 00MHz 2SC3354 O-92JÃ 2SC3368 2SC3356 to 92 2SC3371 2SA1317 2SC3369 2SC3358 2SC3356 2sc3325 cross 2SC3331 2SC3324
smd rf transistor marking

Abstract: 2SC3357 SMD smd transistor marking RE transistor 2SC3357 10 ghz transistor smd transistor marking GA 2SC3357 RF TRANSISTOR 10 GHZ low noise marking rh transistor transistor smd marking RE
Text: IC Transistors SMD Type NPN Silicon RF Transistor 2SC3357 Features Low Noise and High Gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO


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PDF 2SC3357 smd rf transistor marking 2SC3357 SMD smd transistor marking RE transistor 2SC3357 10 ghz transistor smd transistor marking GA 2SC3357 RF TRANSISTOR 10 GHZ low noise marking rh transistor transistor smd marking RE
2SC3170

Abstract: NEC 2SC3358 2sc3904 2sc3358 2SC3357 2SC3505 2SC496 2SC3757 2SC4158 2SC3608
Text: 2SC3357 2SC4422 2SC 3608 2SC3358 2SC3791 2SC 3603 H 2 2SC486S 2SC40S3 2SC4127 2SC 3610


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PDF 2SC3039 2SC4162 2SC3170 2SC4161 2SC3353 2SC4129 2SC3170 NEC 2SC3358 2sc3904 2sc3358 2SC3357 2SC3505 2SC496 2SC3757 2SC4158 2SC3608
4892

Abstract: 2SC4470 2sc3904 2SC3356 2sc3828 2SC3609 2SC4901 2SD1763A 2SC4928 2SD2330
Text: 2SC4900 2SC3829 2SC 4866 = m 2SC3607 2SC3357 2SC4643 2SC 4867 = m 2SC4321 2SC4227 2SC4901


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PDF 2SC4394 2SC4226 2SC49Ã 2SC3937 2SC4470 2SC3356 2SC4904 2SC3704 2SC3609 2SC4093 4892 2sc3904 2sc3828 2SC4901 2SD1763A 2SC4928 2SD2330
transistor 2SC5066

Abstract: BFP620 2SC5067 2sc5066 UPC2709 2SC5066 data sheet 2SC5066 datasheet NESG260234 thn6601b BFP450
Text: 2SC3357 2SC5432 2SC3356 2SC5093 2SC5086 2SC5086FT 2SC5084 2SC4995 2SC5141 2SC4988 2SC5758


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PDF THN5601B THN5702F THN6601B THN6701B THN405Z THN420Z THN450Z THN520Z THN620Z THN640Z transistor 2SC5066 BFP620 2SC5067 2sc5066 UPC2709 2SC5066 data sheet 2SC5066 datasheet NESG260234 thn6601b BFP450
Not Available

Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification 2SC3357 Features Low Noise and High Gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO


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PDF 2SC3357
4407

Abstract: 2SC3885A on 4409 2SC2320 2SC4453 4410 4463 B 4453 4438 2sc4859
Text: 2SC4099 2SC 4421 fé T 2SC4160 2SC3309 2SC3570 2SC 4422 B iL 2SC4859 2SC3607 2SC3357 2SC 4437


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PDF 2SC4253 2SC4179 2SC3931 2SC4154 2SC4100 2SC4247 2SC4186 2SC4410 2SC4083 2SC4245 4407 2SC3885A on 4409 2SC2320 2SC4453 4410 4463 B 4453 4438 2sc4859
KA 3264

Abstract: 2SC3136 2SC3259 2SD689 K 3264 2SC3019 2SC2456 2SD1431 2sc2371 2SC2482
Text: 2SC4115S 2SC 3268 Ä S 2SC3357 2SC3338 2SC 3269 ' □ -A 2SC2271 2SC2482 2SC2610 2SC1573 2SC3249


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PDF 2SC2979 2SC3508 2SC2555 2SC3322 2SD1457 2SC3306 2SC3509 2SD1706 2SD1707 KA 3264 2SC3136 2SC3259 2SD689 K 3264 2SC3019 2SC2456 2SD1431 2sc2371 2SC2482
ne666

Abstract: NEC NE85635 2SC33 NE85600 epitaxial micro-x NE85635 NE856 ka13 NEB5600 UPA810T
Text: Y P M AX 7.0 1.4 2.0 NE65634 2SC3357 34 MIN TYP 65 1.4 2.1 9 1Q 11.5 95 7 120 300 1.0 1.0 1.0 2CO


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PDF NE856 NE856C0 NE85635 20CTC NE85633 NE86635 NE8S632 ne666 NEC NE85635 2SC33 NE85600 epitaxial micro-x NE85635 ka13 NEB5600 UPA810T
IC 4435

Abstract: 2SC3357 2SC5336 2SC5336-T1
Text: , IC = 20 mA, f = 1 GHz 2SC3357 4 2SC5336 25 2SC5336-T1 1 k / 12


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PDF 2SC5336 2SC3357 2SC5336-T1 P10938JJ2V0DS IC 4435 2SC3357 2SC5336 2SC5336-T1
NEC NE85635

Abstract: 2SC3356 to 92 NE85634 NEC 2501 MF 216 NE85834 TRANSISTOR NEC B77 NE856 2SC3357 2sc3356 NE85635
Text: NE85600 00 (CHIP) NE85632 2SC3355 32 NE85633 2SC3356 33 NE85634 2SC3357 34 NE85635 2SC3603 35 , NUMBER PACKAGE OUTLINE NE85600 00 (CHIP) NE85632 2SC3355 32 NE85633 2SC3356 33 NE85634 2SC3357 34


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PDF NE856 NEC NE85635 2SC3356 to 92 NE85634 NEC 2501 MF 216 NE85834 TRANSISTOR NEC B77 2SC3357 2sc3356 NE85635
transistor NEC D 822 P

Abstract: transistor NEC B 617 NEC D 822 P NEC B 617 NEC D 809 50/transistor NEC D 822 P NEC D 809 F P1093 4435 power ic
Text: PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 HIGH NPN EPITAXIAL SILICON TRANSISTOR F R E Q U E N C Y LOW D IS T O R T IO N A M P L IF IE R FEATURES · · High gain | S 21 | 2 = 12 dB TYP, @ f = 1 GHz, V c e = 10 V , Ic = 20 mA New power mini-mold package version of a 4-pin type gain-im proved on the 2SC3357 1.5±0.1 PACKAGE DIMENSIONS (in millimeters) ABSOLUTE MAXIMUM RATINGS (TA= 25 °C) P aram eter Collector to B ase V oltage Collector to Em itter Voltage Em itter to B ase V


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PDF 2SC5336 2SC3357 transistor NEC D 822 P transistor NEC B 617 NEC D 822 P NEC B 617 NEC D 809 50/transistor NEC D 822 P NEC D 809 F P1093 4435 power ic
1998 - 4435 power ic

Abstract: transistor NEC B 617 IC 4435 NEC silicon epitaxial power transistor 1694 NEC B 617 nec b 536 transistor NEC B 536 NPN transistor mhz s-parameter gh 312 2SC5336
Text: PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES · · PACKAGE DIMENSIONS High gain 2 | S21 | = 12 dB TYP, @f = 1 GHz, VCE = 10 V, Ic = 20 mA New power mini-mold package version of a 4-pin type gain-improved on the 2SC3357 (in millimeters) 4.5±0.1 1.6±0.2 1.5±0.1 Rating Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage


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PDF 2SC5336 2SC3357 4435 power ic transistor NEC B 617 IC 4435 NEC silicon epitaxial power transistor 1694 NEC B 617 nec b 536 transistor NEC B 536 NPN transistor mhz s-parameter gh 312 2SC5336
2001 - transistor NEC B 617

Abstract: nec k 3115 NEC k 3115 transistor 2SC3357 P1093 NEC 718 4435 power ic 2SC5336-T1 2SC5336 NEC B 617
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5336 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES · High gain: S21e = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz 2 · 4-pin power minimold package with improved gain from the 2SC3357 ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5336 25 pcs (Non reel) · Magazine case 2SC5336-T1 1 kpcs/reel · 12 mm wide embossed taping · Collector face the


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PDF 2SC5336 2SC3357 2SC5336-T1 transistor NEC B 617 nec k 3115 NEC k 3115 transistor 2SC3357 P1093 NEC 718 4435 power ic 2SC5336-T1 2SC5336 NEC B 617
NE99532

Abstract: 2sc3358 NE3005B20 NE85637 NE4201 NE1010E ne3005b-20 2SC3358 transistor ne3005b NE1005E
Text: 2SC3355 32 NE85633 2SC3356 33 NE85634 2SC3357 34 NE85635 2SC3603 35 NE85637 2SC3358 37 SYMBOLS , 32 NE85633 2SC3356 33 NE85634 2SC3357 34 NE85635 2SC3603 35 NE85637 2SC3358 37 SYMBOLS


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PDF NE856 NE99532 NE32700 NE32702 NE32708 NE32740A NE32740B 2sc3358 NE3005B20 NE85637 NE4201 NE1010E ne3005b-20 2SC3358 transistor ne3005b NE1005E
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