The Datasheet Archive

2SC3355 datasheet (17)

Part Manufacturer Description Type PDF
2SC3355 NEC Semiconductor Selection Guide 1995 Original PDF
2SC3355 NEC Semiconductor Selection Guide Original PDF
2SC3355 NEC HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR Original PDF
2SC3355 Various Russian Datasheets Transistor Original PDF
2SC3355 California Eastern Laboratories UHF/Microwave NPN BJT Scan PDF
2SC3355 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
2SC3355 Continental Device India TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),TO-92 Scan PDF
2SC3355 Others Japanese Transistor Cross References (2S) Scan PDF
2SC3355 Others Semiconductor Master Cross Reference Guide Scan PDF
2SC3355 Others The Transistor Manual (Japanese) 1993 Scan PDF
2SC3355 Others High Frequency Device Data Book (Japanese) Scan PDF
2SC3355 Others Transistor Substitution Data Book 1993 Scan PDF
2SC3355 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SC3355 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SC3355K NEC HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR Original PDF
2SC3355K-T NEC NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification Original PDF
2SC3355-T NEC For amplify low noise and high frequency Original PDF

2SC3355 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2011 - 2sc3355

Abstract: NPN transistor to-92 2SC3355L 2sc3355g
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES 1 NPN SILICON EPITAXIAL TRANSISTOR * Low Noise and High Gain * High Power Gain TO-92 ORDERING INFORMATION Normal 2SC3355-T92-B 2SC3355-T92-K 2SC3355-T92-R 2SC3355L-T92-B Ordering Number Lead Free 2SC3355L-T92-B 2SC3355L-T92-K 2SC3355L-T92-R Halogen Free 2SC3355G-T92-B 2SC3355G-T92-K 2SC3355G-T92-R , www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., LTD 1 of 2 QW-R201-036.Ba 2SC3355 NPN


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PDF 2SC3355 2SC3355-T92-B 2SC3355-T92-K 2SC3355-T92-R 2SC3355L-T92-B 2SC3355L-T92-B 2SC3355L-T92-K 2SC3355L-T92-R 2SC3355G-T92-B 2SC3355G-T92-K 2sc3355 NPN transistor to-92 2SC3355L 2sc3355g
2014 - Not Available

Abstract: No abstract text available
Text: -92 ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SC3355L-T92-B 2SC3355G-T92-B 2SC3355L-T92-K 2SC3355G-T92-K Note: Pin Assignment: B: Base E: Emitter C: Collector 2SC3355L-T92-B Package TO , UNISONIC TECHNOLOGIES CO., LTD 2SC3355 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW , Copyright © 2014 Unisonic Technologies Co., LTD 1 of 3 QW-R201-036.C 2SC3355  NPN SILICON , GHz 1.0 pF dB 2 of 3 QW-R201-036.C 2SC3355 NPN SILICON EPITAXIAL TRANSISTOR UTC


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PDF 2SC3355 2SC3355L-T92-B 2SC3355G-T92-B 2SC3355L-T92-K 2SC3355G-T92-K QW-R201-036
2Sc3355

Abstract: 3094 transistor transistor s11 s12 s21 s22 transistor k 0247 634 transistor 647 transistor RF Transistor s-parameter transistor 647 7338 transistor NPN transistor mhz s-parameter
Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3355 , isc Silicon NPN RF Transistor 2SC3355 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise , Websitewww.iscsemi.cn isc RF Product Specification 2SC3355 isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3355 S-PARAMETER VCE = 10 V, IC = 20 mA, ZO = 50 f , Semiconductor isc Silicon NPN RF Transistor 2SC3355 VCE = 10 V, IC = 40 mA, ZO = 50 f (MHz) S11


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PDF 2SC3355 S22e-FREQUENCY S21e-FREQUENCY S12e-FREQUENCY 2Sc3355 3094 transistor transistor s11 s12 s21 s22 transistor k 0247 634 transistor 647 transistor RF Transistor s-parameter transistor 647 7338 transistor NPN transistor mhz s-parameter
1985 - transistor 2sc3355 and application

Abstract: transistor 2sc3355 and application NOTICE 2SC3355 2SC3355, npn 2SC3355-T PA33
Text: Quantity Supplying Form 2SC3355 500 pcs (Non reel) · 18 mm wide radial taping 2SC3355-T , DATA SHEET NPN SILICON RF TRANSISTOR 2SC3355 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor , mark · shows major revised points. © NEC Compound Semiconductor Devices 1985, 2003 2SC3355 , Value 2 K 50 to 300 Data Sheet PU10208EJ01V0DS 2SC3355 TYPICAL CHARACTERISTICS (TA =


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PDF 2SC3355 2SC3355 2SC3355-T PU10208EJ01V0DS transistor 2sc3355 and application transistor 2sc3355 and application NOTICE 2SC3355, npn 2SC3355-T PA33
2011 - Not Available

Abstract: No abstract text available
Text: 1 TO-92 ̈ ORDERI N G I N FORM AT I ON Normal 2SC3355-T92-B 2SC3355-T92-K 2SC3355-T92-R Ordering Number Lead Free 2SC3355L-T92-B 2SC3355L-T92-K 2SC3355L-T92-R Halogen Free 2SC3355G-T92-B 2SC3355G-T92-K 2SC3355G-T92-R Package Packing TO-92 TO-92 TO-92 Tape Box Bulk Tape Reel 2SC3355L-T92-B (1)Packing Type (1) B: Tape Box, T: Tape Reel (2)Package Type (2) T92: TO-92 (3 , UNISO TE NIC CHNO G SCO LTD LO IE ., 2SC3355 NPN SILICON EPITAXIAL TRANSISTOR H I GH


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PDF 2SC3355 2SC3355-T92-B 2SC3355-T92-K 2SC3355-T92-R 2SC3355L-T92-B 2SC3355L-T92-K 2SC3355L-T92-R 2SC3355G-T92-B 2SC3355G-T92-K 2SC3355G-T92-R
1997 - 2SC3355

Abstract: transistor 2sc3355 and application PA33 marking PA33
Text: DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed , 2SC3355 TYPICAL CHARACTERISTICS (TA = 25 C) FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 2 , Current-mA 2 30 0.1 0.2 0.4 f-Frequency-GHz 0.6 0.8 10 2 2SC3355 INTERMODULATIOn , 0.335 S22 17.5 22.8 28.7 35.7 41.8 49.8 56.3 66.6 78.8 89.6 3 2SC3355 S-PARAMETER


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PDF 2SC3355 2SC3355 transistor 2sc3355 and application PA33 marking PA33
2001 - Not Available

Abstract: No abstract text available
Text: UTC 2SC3355 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 1 TO-92 1: BASE 2: EMITTER 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT , MAX µA µA 7 1.0 GHz pF dB CO., LTD. 1 1.1 QW-R201-036,A UTC 2SC3355 , CO., LTD. 2 QW-R201-036,A UTC 2SC3355 UTC NPN SILICON EPITAXIAL TRANSISTOR UNISONIC


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PDF 2SC3355 QW-R201-036
transistor NEC D 822 P

Abstract: NEC D 822 P transistor NEC D 587 2sc3355 transistor NEC B 617 nec a 634 transistor marking S00 TRANSISTOR b 772 p
Text: DATA SHEET SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low , 2SC3355 TA-Ambient Temperature-°C VcB-Collector to Base Voltage-V DC CURRENT GAIN vs. COLLECTOR CURRENT , NEC NOISE FIGURE vs. CO LLECTORCURRENT V ce = 10 V f = 1.0 GHz 2SC3355 INTERMODULATIOn DISTORTION , NEC 2SC3355 4 NEC [MEMO] 2SC3355 NEC [MEMO] 2SC3355 NEC [MEMO] 2SC3355


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PDF 2SC3355 2SC3355 transistor NEC D 822 P NEC D 822 P transistor NEC D 587 transistor NEC B 617 nec a 634 transistor marking S00 TRANSISTOR b 772 p
transistor NEC D 822 P

Abstract: transistor NEC B 617
Text: DATA SHEET SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low , Printed in Japan © NEC Corporation 1985 NEC 2SC3355 TYPICAL CHARACTERISTICS (T a = 2 5 °C , Current-mA INSERTION GAIN, MAXIMUM GAIN vs. FREQUENCY f-Frequency-GHz 50 70 IM C E 2SC3355 , 21.3 0.344 39.4 0.335 -8 9 .6 3 NEC 2SC3355 S-PARAMETER S u e , S 22e - F R E


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PDF 2SC3355 2SC3355 transistor NEC D 822 P transistor NEC B 617
1985 - transistor 2sc3355 and application

Abstract: 2sc3355 2SC3355, npn
Text: Number 2SC3355 2SC3355-T Quantity 500 pcs (Non reel) 2.5 kpcs/box (Box type) Supplying Form · 18 mm wide , Renesas Electronics. DATA SHEET NPN SILICON RF TRANSISTOR 2SC3355 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC3355 is an NPN silicon epitaxial , mark · shows major revised points. © NEC Compound Semiconductor Devices 1985, 2003 2SC3355 , 2SC3355 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) TOTAL POWER DISSIPATION vs


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PDF PU10208EJ01V0DS 2SC3355 transistor 2sc3355 and application 2sc3355 2SC3355, npn
2004 - 2SC3355

Abstract: 2SC3355, npn F10G NPN SILICON EPITAXIAL TRANSISTOR
Text: UTC 2SC3355 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 1 TO-92 1: BASE 2: EMITTER 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT , 1.0 GHz pF dB UNISONIC TECHNOLOGIES CO., LTD. 1 1.1 QW-R201-036,A UTC 2SC3355 , CO., LTD. 2 QW-R201-036,A UTC 2SC3355 NPN SILICON EPITAXIAL TRANSISTOR UTC assumes no


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PDF 2SC3355 QW-R201-036 2SC3355 2SC3355, npn F10G NPN SILICON EPITAXIAL TRANSISTOR
2010 - NE56755

Abstract: LT3203 HXTR4105 BFR96S HXTR3615 NE21960 j200 BF370 sot173 2SC351
Text: NE02160 NE02103 NE41603 NE41607 NE41635 2SC351 0 2SC3605 2SC35S2 2SC35S2 2SC3355 2SC3355 30 35 40 40 40 30


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PDF BFQ73S BFR96 AT41435-5 AT420S5 AT414S5 AT41435-3 AT41470 AT41410 NE9S203 NE9S20S NE56755 LT3203 HXTR4105 BFR96S HXTR3615 NE21960 j200 BF370 sot173 2SC351
4946

Abstract: me 4946 2SC5020 4947 an 4953 4953 2SC3124 2SC3310 2SC4639 4336
Text: 2SC5020 2SC4774 2SC 4968 fâ t 2SC3605 2SC3355 2SC4629 2SC 4969 —- f¿ t 2SC4639 2SC2712


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PDF 2SC4S39 2SC4808 2SC4931 2SC5007 2SC4805 2SC4555 2SC4118 2SD2228 2SD1820 2SC3440 4946 me 4946 2SC5020 4947 an 4953 4953 2SC3124 2SC3310 2SC4639 4336
nec 2501

Abstract: nec 2502 NEC 2505 NEC 2504 NEC 2506 2482 H 2SC2534 nec 2508 2SC3660 2SC1555
Text: 2SC2820 2SC2640 2SC300S- XA 2SC1946A 2SC1969 2SC2570A 2SC3355 2SD773 2SC2335 2SC2335 2SC2612 2SC2613


OCR Scan
PDF 2SC2473 2SC2474 2SC2475 2SC2476 2SC2477 2SC2480 2SC2451 2SC2482 2SD2483 2SC2484 nec 2501 nec 2502 NEC 2505 NEC 2504 NEC 2506 2482 H 2SC2534 nec 2508 2SC3660 2SC1555
2SC3368

Abstract: 2SC3356 to 92 2SC3371 2SA1317 2SC3369 2SC3358 2SC3356 2sc3325 cross 2SC3331 2SC3324
Text: 20 0.05 0.3 25 250 10 0. 002 2SC3355 HS HF LN A 20 12 0.1 0.6 1 10 50 300 10 0.02 , 2SC3355 7000* 10 0.02 1 NF max 2dB f=lGHz (SC-59) EBC 2SC3356 6500* 10 0.02 1 NF max 3dB f=lGHz


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PDF 2SC3322 2SC3324 2SC3325 2SC3326 2SC3327 2SC3328 2SC3329 00MHz 2SC3354 O-92JÃ 2SC3368 2SC3356 to 92 2SC3371 2SA1317 2SC3369 2SC3358 2SC3356 2sc3325 cross 2SC3331 2SC3324
2005 - Not Available

Abstract: No abstract text available
Text: FORWARD INTERNATIONAL ELECTRONICS LTD. 2SC3355 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER Package: TO-92 DESCRIPTION Low noise amplifier at VHF,UHF and CATV band. It has lange dynamic range and good current characteristic. ABSOLUTE MAXIMUM RATINGS at Tamb=250C Characteristic Symbol Rating Collector-Base Voltage Vcbo 20 Collector-Emitter Voltage Vceo 12 Emitter-Base Voltage Vebo 3 Collector Current Ic 100 Collector


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PDF 2SC3355
2SC2499

Abstract: 2SC3531 2SC3098 3771 3771 nec 2SC4811K 2SC3761 2sc3355 hitachi 2sc3841 2SC3124
Text: 2SC3098 2SC3099 2SC3429 2SC3545 2SC2759 2SC3841 2SC3841 2SC2351 2SC2351 2SC2408 2SC3544 2SC257QA 2SC3355


OCR Scan
PDF 2SC3751 2SC3531 2SC3978 2SC3979 2SD1441 2SD1848 2SD1730 2SD1730 2SC3559 2SC4123 2SC2499 2SC3531 2SC3098 3771 3771 nec 2SC4811K 2SC3761 2sc3355 hitachi 2sc3841 2SC3124
2010 - BF907

Abstract: BF900 BF910 BF914 BF479S NE56755 BF479T Siemens BF540 BF342
Text: NE02160 NE02103 NE41603 NE41607 NE41635 2SC351 0 2SC3605 2SC35S2 2SC35S2 2SC3355 2SC3355 30 35 40 40 40 30


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PDF BFQ73S BFR96 AT41435-5 AT420S5 AT414S5 AT41435-3 AT41470 AT41410 NE9S203 NE9S20S BF907 BF900 BF910 BF914 BF479S NE56755 BF479T Siemens BF540 BF342
2SC752G-TM

Abstract: 2sc945q 2SC383TM 2SC458B 2SC458C 2SC3355 2SC460 2SC460A 2SC460B 2SC460C
Text: 1 10 TO-92-1 2SC3355 20 12 3 0.6 0.1 15 50 300 20 10 1 6500 20 3 1000 TO-92 2SC383TM 50


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PDF 2SC3199Y O-92-1 2SC3355 2SC383TM 2SC388AT 2SC763 2SC9022 rO-92-1 2SC945 2SC752G-TM 2sc945q 2SC458B 2SC458C 2SC460 2SC460A 2SC460B 2SC460C
2SC458D

Abstract: 2SC460B 2SC536G 2sc945p 2SC536F 2SC458C 2SC3199Y 2SC536E 2SC458B 2SC752G-TM
Text: 100 2 3.5 80 1 10 TO-92-1 2SC3355 20 12 3 0.6 0.1 15 50 300 20 10 1 6500 20 3 1000 TO


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PDF 2SC3199Y O-92-1 2SC3355 2SC383TM 2SC38BATH 2SC763 2SC9022 2SC458D 2SC460B 2SC536G 2sc945p 2SC536F 2SC458C 2SC536E 2SC458B 2SC752G-TM
2012 - 2SK2396

Abstract: PC2763 pc1658 2SC3357 2SC3545 ne27283 UPC1663 2sc2757 2sc5008 2SC2570A
Text: (V) 2SC1927(NE73440B) 2SC2148(NE73435) 2SC2149(NE02135) 2SC2351(NE02133) 2SC2954 2SC3355 (NE85632 , RF & s 1/2 CATV Pre Amp. Buffer Amp. 1st IF Amp. TO92 2SC3355 2SC2570A 2SC2570A 2SC3355 , 2SC5338 2SC3603 2SC3355 2SC3357 2SC5336 2SC3356 2SC4226 2SC4093 2SC5011 2SC5006 2SC5432 2SC3604 2SC3582 , 2SC2586 2SC2762 2SC3218M 2SC3286M 2SC3355 2SC3356 2SC3357 2SC3545 2SC3582 2SC3583 2SC3585 2SC3587 2SC3603


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PDF X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 2SC3357 2SC3545 ne27283 UPC1663 2sc2757 2sc5008 2SC2570A
2SC536E

Abstract: 2SC536G 2SC458C 2SC460B 2SC536F 2SC945P 2SC945Q 2SC458D 2SC752G-TM 2SC536D
Text: 0.25 100 2 3. 5 80 1 10 TO-92-1 2SC3355 20 12 3 0.6 0.1 15 50 300 20 10 1 6500 20 3 1000


OCR Scan
PDF 2SC3199Y O-92-1 2SC3355 2SC383TM 2SC388AT 2SC763 2SC9022 rO-92-1 2SC945 2SC536E 2SC536G 2SC458C 2SC460B 2SC536F 2SC945P 2SC945Q 2SC458D 2SC752G-TM 2SC536D
2SC460B

Abstract: 2SC458D 2sc945q 2SC458C 2SC752G-TM 2SC763 2SC536F 2SC458 2SC3355 2SC460A
Text: Maximum Ratings Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Type No. ^cbo (V) Min ^ceo (V) Min vebo (V) Min m 0Tc=25°c 'c (A) 'cbo (PA) Max vCB ® (V) 'ces (M Max vCE ®(V) hFE Min @ Max lc & (mA) VCE (V) vce(sat) (V) Max Min vbe(sat) 'c (V) e (mA) Max c* (PF> Typ Max f, (MHz) Min Typ @ Max lc (mA) Vf) (ns) Max Nf (dB) Max ® Freq (MHz) c„ 2SC3355 20 12


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PDF 2SC3199Y O-92-1 2SC3355 2SC383TM 2SC388ATK 2SC752GTM1 2SC460B 2SC458D 2sc945q 2SC458C 2SC752G-TM 2SC763 2SC536F 2SC458 2SC460A
2SC3199GR

Abstract: 2SC460B 2sc458c 2SC3197
Text: -92-1 2SC3199 2SC3199GR 2SC31990 2SC3199Y 2SC3355 2SC383TM 2SC388ATM 2SC458 2SC458B 2SC458C 2SC4S8D 2SC460


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PDF O-92-1 2SC2482 2SC3114 25C3114R 2SC3114S 2SC3114T 2SC3114U 2SC3197 2SC3198 O-92-1 2SC3199GR 2SC460B 2sc458c
1998 - nf025

Abstract: NE27283 upc27 NE42484 x-band power transistor 100W P147D 2SK2396 nf025db uPG508 c-band lna chip
Text: 1000 2000 2000 2000 Part Number 2SC1927 2SC2148 2SC2149 2SC2351 2SC2954 2SC3355 2SC3356 2SC3357 , . 2SC3355 2SC3356 2SC2570A 2SC2351 2SC2570A 2SC2351 2SC3355 2SC3356 2SC2570A 2SC2351 2SC3545 2SC4568 2SC4569 , 5.5 6.0 7.0 8.5 10.0*1 2SC3603 2SC3604 2SC3587 2SC3355 2SC3582 2SC4703 2SC3357 2SC5338 2SC5336 2SC3356 , 2SC1926 2SC1927 2SC2148 2SC2149 2SC2351 2SC2586 2SC2762 2SC3218-M 2SC3286-M 2SC3355 2SC3356 2SC3357


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PDF X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 NE42484 x-band power transistor 100W P147D 2SK2396 nf025db uPG508 c-band lna chip
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