The Datasheet Archive

2SC3298 datasheet (31)

Part Manufacturer Description Type PDF
2SC3298 Various Russian Datasheets Transistor Original PDF
2SC3298 Others Transistor Shortform Datasheet & Cross References Scan PDF
2SC3298 Others Japanese Transistor Cross References (2S) Scan PDF
2SC3298 Others Cross Reference Datasheet Scan PDF
2SC3298 Others Catalog Scans - Shortform Datasheet Scan PDF
2SC3298 Others Catalog Scans - Shortform Datasheet Scan PDF
2SC3298 Others Catalog Scans - Shortform Datasheet Scan PDF
2SC3298 Others The Transistor Manual (Japanese) 1993 Scan PDF
2SC3298 Others Transistor Substitution Data Book 1993 Scan PDF
2SC3298 Others Scan PDF
2SC3298 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SC3298 Toshiba SILICON NPN EPITAXIAL TYPE Scan PDF
2SC3298 Toshiba TO-220 Package Transistors Scan PDF
2SC3298A Various Russian Datasheets Transistor Original PDF
2SC3298A Others Japanese Transistor Cross References (2S) Scan PDF
2SC3298A Others The Transistor Manual (Japanese) 1993 Scan PDF
2SC3298A Others Transistor Substitution Data Book 1993 Scan PDF
2SC3298A Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SC3298A Toshiba TO-220 Package Transistors Scan PDF
2SC3298B Motorola 1.5 A 200V 20W complementary silicon power NPN stransistor Scan PDF

2SC3298 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2SC3298A

Abstract: 2SC3298 2SA1306 toshiba 0D07T
Text: 2SC3298A 2SC3298B 2SC3298 Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range 2SC3298A 2SC3298B vEB0 , ) 56C 07676 D T * 3 ^ " 0 9 2SC3298 * 2SC3298A·2SC3298B IC - < V CE le - V BE ! , TOSHIBA {DISCRETE/OPTO} Sb DE~jj ^ 0 ^ 7 5 5 0 G D D ? t 7 S 2SC3298 2SC3298A I2SC3298B , . 100 25 MAX. 1.0 1.0 240 1.5 1.0 - UNIT lik MA 2SC3298A 2SC3298B V DC Current Gain


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PDF 2SC3298 2SC3298A I2SC3298B 100MHz 2SA1306, 2SA1306A, 2SA1306B 2SC3298B 2SA1306 toshiba 0D07T
2SC3298

Abstract: 2SA1306 TOSHIBA 2SA1306 2SA1306A 2SA1306B 2SC3298A 2SC3298B 2SA1306 2SC3298
Text: Voltage 2SC3298 VcBO 160 V 2SC3298A 180 2SC3298B 200 Collector-Emitter Voltage 2SC3298 vCEO 160 V 2SC3298A 180 2SC3298B 200 Emitter-Base Voltage vEB0 5 V Collector Current ic 1.5 A Base Current IB , Collector-Emitter Breakdown Voltage 2SC3298 v(BR)CEO IC=10mA, IB=0 160 - - V 2SC3298A 180 - - 2SC3298B 200 - , TOSHIBA OISCRETE/OPTO> 2SC3298 2SC3298A I2SC3298B 90972 50 TOSHIBA ?t 1 / 9097250 TOSHIBA C DISCRETE / OPTO ) 56C Olblb 0 2SC3298•2SC3298A•2SC3298B le — VCE le


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PDF 2SC3298 2SC3298A I2SC3298B 100MHz 2SA1306, 2SA1306A, 2SA1306B DD07b7S 2SC3298A 2SA1306 TOSHIBA 2SA1306 2SA1306A 2SC3298B 2SA1306 2SC3298
2SC3298

Abstract: 2SA1306 2SA1306 2SC3298 2SA1306 toshiba 2SC3298A SC3298 2SA1306A 2SC3298B 2SA1306B toshiba tb 607
Text: UNIT Collector-Base Voltage 2SC3298 VcBO 160 V 2SC3298A 180 2SC3298B 200 Collector-Emitter Voltage 2SC3298 vCEO 160 V 2SC3298A 180 2SC3298B 200 Emitter-Base Voltage vEBO 5 V Collector , 2SC3298 v(BR)CEO IC=10mA, IB=0 160 - - V 2SC3298A 180 - - 2SC3298B 200 - - DC Current Gain hFE , TOSHIBA OISCRETE/OPTO> 2SC3298 2SC3298A I2SC3298B 90972 50 TOSHIBA ?t i / 9097250 TOSHIBA C DI SCRETE / OPTO ) 5òC 07676 0 2SC3298•2SC3298A•2SC3298B


OCR Scan
PDF 2SC3298 2SC3298A I2SC3298B 100MHz 2SA1306, 2SA1306A, 2SA1306B DD07b7S 2SA1306 2SA1306 2SC3298 2SA1306 toshiba 2SC3298A SC3298 2SA1306A 2SC3298B 2SA1306B toshiba tb 607
2SA1306 2SC3298

Abstract: 2SC3298 2SC3298A 2SA1306 2SC3298B 2SA1306A 2SA1306B
Text: Silicon NPN Power Transistors 2SC3298 2SC3298A 2SC3298B PACKAGE OUTLINE Fig.2 Outline dimensions , 2SC3298A 2SC3298B DESCRIPTION ·With TO-220Fa package ·Complement to type 2SA1306,2SA1306A,2SA1306B , PARAMETER CONDITIONS 2SC3298 VCBO Collector-base voltage 2SC3298A VALUE 160 Open emitter 180 2SC3298B Collector-emitter voltage 160 2SC3298A Open base 2SC3298B VEBO , =25 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3298 2SC3298A


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PDF 2SC3298 2SC3298A 2SC3298B O-220Fa 2SA1306 2SA1306A 2SA1306B 2SC3298 2SC3298A 2SA1306 2SC3298 2SC3298B 2SA1306B
2sc3298

Abstract: 2SA1306 2SC3298 3298B 2SC3298A 2sa1306
Text: SUCON NPNEPTAXAL TYPE Unit in mm 1 0 . 3 MAX. MAXIMUM RATINGS CHARACTERISTIC 2SC3298 Collector-Base Voltage 2SC3298A 2SC3298B 2SC3298 Col lector-Emit, ter Voltage Emitter-Base Voltage Collector , 2SC3298A 2SC3298B vEB0 ic IB PC Tj Tstg (Ta=25°C) SYMBOL ICBO lEBO TEST CONDITION VCB=160V, Ie=0 V EB , Breakdown Voltage 2SC3298A 2SC3298B DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter , 2SC3298 ,3298A,3298B POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES


OCR Scan
PDF 2SC3298 3298B 100MHz 2SA1306, 2SA1306A, 2SA1306B 2SC3298A 2SC3298B 2SA1306 2SC3298 3298B 2sa1306
2005 - 2SA1306 2SC3298

Abstract: 2sc3298 2SC3298B 2SC3298A 2SA1306 2SA1306A 2SA1306B silicon power transistors
Text: Product Specification www.jmnic.com 2SC3298 2SC3298A 2SC3298B Silicon Power Transistors , Specification www.jmnic.com Silicon Power Transistors 2SC3298 2SC3298A 2SC3298B CHARACTERISTICS Tj , VCBO Collector-base voltage 2SC3298A VALUE 160 Open emitter 180 2SC3298B Collector-emitter voltage 160 2SC3298A Open base 2SC3298B VEBO Emitter-base voltage V 200 , breakdown voltage 2SC3298A TYP. MAX UNIT 160 IC=10mA , IB=0 V 180 200 2SC3298B


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PDF 2SC3298 2SC3298A 2SC3298B O-220Fa 2SA1306 2SA1306A 2SA1306B 2SC3298 2SC3298A 2SA1306 2SC3298 2SC3298B 2SA1306B silicon power transistors
2SA1306 2SC3298

Abstract: 2SC3298 2SC3298A 2sa1306 2SC3298B 2sa1306a 2SA1306B
Text: voltage 2SC3298 2SC3298A OND IC CONDITIONS Open emitter Emitter-base voltage VALUE UNIT 160 180 2SC3298B 2SC3298 V 200 160 2SC3298A Open base 2SC3298B VEBO , Specification 2SC3298 2SC3298A 2SC3298B Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless , 2SC3298 2SC3298A 2SC3298B Silicon NPN Power Transistors PACKAGE OUTLINE E SEM NG CHA , 2SC3298A 2SC3298B DESCRIPTION With TO-220Fa package Complement to type 2SA1306,2SA1306A,2SA1306B


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PDF 2SC3298 2SC3298A 2SC3298B O-220Fa 2SA1306 2SA1306A 2SA1306B 2SC3298 2SC3298A 2SA1306 2SC3298 2SC3298B 2SA1306B
b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Text: 2SC3310 2SC2553 R e co m m en d R e p la c e m e n t T y p e N o. 2SC1173 2SC3298 2SC3298A 2SC3298B , 2SD818 _ 2SC3608 2SC3608 - 2SC1763 2SC1764 - 2SC2238, 2SC3298 2SC2238, 2SC3298 2SC3421 2SC2705 , 2SC2794 2SC2794(NP) 2SC2806 R eco m m en d R e p la c e m e n t T y p e N o. 2SC2238, 2SC3298 2SC2075 , 2SC2181 2SC3298 2SC1569 2SC3420 2SC3420 2SC2068 2SC2499 2SC3099 2SC2380 2SC2075 2SC2098 2SC3608


OCR Scan
PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
2SK147

Abstract: 2SC3281 2SA1302 2SC3280 2SA1301 2SK389 2SC2240 2sk405 2sj115 2SC3182N 2SJ109 2SK405 2SA970
Text: ±45 2SC3298 2SA1306 2SC3280 2SA1301 90 ±50 2SC3298A 2SA1306A 2SC3281 , 2SC3298 +B2 = 62 V 0.022 30 µF (5 W) 12 k 2SA970 820 12 k 2SC3423 2SA1360


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PDF 2SK147 2SC2240 2SC2240 2SA970 1SS226 1SS193 2SA950 2SK147 2SC3281 2SA1302 2SC3280 2SA1301 2SK389 2sk405 2sj115 2SC3182N 2SJ109 2SK405
2Sc4431

Abstract: 1763A 2SD1116 2SC1449 2SD1944 2sc2238 ZSD1264 2SD1929 2SD1405 2sd1587
Text: 2 SO 1763A □ —A 2SC3298 2SC4431 ZSD1264 2SD 1764 O—A 2SD1836 2SD1325 2SD 1765 , â , 2SD1772A 2SD 1771 y-y try 2SC2983 2SC2690A 2SD 1 7 7 2 yyry 2SC3298 2SD1587 2SD1763A 2SD


OCR Scan
PDF 2SD1653 2SD1654 2SD1655 2SD1656 2SD1407 2SD1499 2SD1889 2SD1608 2SD1048 2SC2859 2Sc4431 1763A 2SD1116 2SC1449 2SD1944 2sc2238 ZSD1264 2SD1929 2SD1405 2sd1587
Not Available

Abstract: No abstract text available
Text: 2SC3298 Transistors Si NPN Power HF BJT Military/High-RelN V(BR)CEO (V)160 V(BR)CBO (V)160 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)150 I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.70 h(FE) Max. Current gain.240 @I(C) (A) (Test Condition)100n @V(CE) (V) (Test Condition)2.0 f(T) Min. (Hz) Transition Freq100M @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A


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PDF 2SC3298 Freq100M StyleTO-220var
2SC3258

Abstract: 2SC3950 2SC4116 2SC3209 3918 2SC1623 2SC3958 2SD667 2SC4211 2SC3874
Text: 3941 ✓ fé T 2SC2482 2SC3209 2SC3269 2SC 3944 y fé T 2SC3298 2SC 3944A fé T 2SC3298A


OCR Scan
PDF 2SC3090 2SC4157 2SC2812 2SC2712 2SC1623 2SC2463 2SD601A 2SC2412K 2SC4211 2SC4116 2SC3258 2SC3950 2SC4116 2SC3209 3918 2SC3958 2SD667 2SC3874
2sa1306

Abstract: 2SA1306 2SC3298 2SA1306A 2SA1306/A Transistor 2SA1306B 2sc3298 circuits 2SC3298 transistor 2SC3298A
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SA1306/A/B DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown VoltageV(BR)CEO= -160V(Min)-2SA1306 = -180V(Min)-2SA1306A = -200V(Min)-2SA1306B ·Complement to Type 2SC3298 /A/B APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE 2SA1306 VEBO Collector-Emitter Voltage -180 -200


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PDF 2SA1306/A/B -160V -2SA1306 -180V -2SA1306A -200V -2SA1306B 2SC3298/A/B 2SA1306 2SA1306A 2sa1306 2SA1306 2SC3298 2SA1306A 2SA1306/A Transistor 2SA1306B 2sc3298 circuits 2SC3298 transistor 2SC3298A
2SA1306

Abstract: 2SA1306A 2SA1306 2SC3298 2SA1305A 2SA1306B 2SC3298A to-22 2SC3298 2SA1306 Y 2SC3298B
Text: AÜK AOK Semiconductor Product Specification Silicon PNP Power Transistors 2SA1306 2SA1306A 2SA1306B DESCRIPTION • With TO-22()Fa package • Complement to type 2SC3298 , 2SC3298A , 2SC3298B APPLICATIONS • Power amplifier applications • Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum rating s (Ta= 25XJ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SA1306 -160 VCBO Collector-base voltage 2SA1306A Open emitter -180 V 2SA1306B -200 2SA1306 -160


OCR Scan
PDF 2SA1306 2SA1306A 2SA1306B 2SC3298 2SC3298A 2SC3298B 2SA1306 2SA1306B 2SA1306 2SC3298 2SA1305A to-22 2SA1306 Y
RT1N241M

Abstract: 2sc3246 2SC4159 DTC143ES 4392 2SC3296 2sc3374 DTC114EU 2sc4368 DTC144EU
Text: 2SD1772 2SC 4369 »am? 2SD1666 2SC3677 2SD1585 2SD1268 2SD1762 2SC 4370 2SC4159 2SC3298 2SD1587


OCR Scan
PDF 2SD1623 2SC2873 2SC3458 N221F RT1N432C DTC143XK UN4216 RT1N432S DTC143XS RN1401 RT1N241M 2sc3246 2SC4159 DTC143ES 4392 2SC3296 2sc3374 DTC114EU 2sc4368 DTC144EU
2SC4793

Abstract: 2SA1869 2SC3498 2sa1306 2SC4935 2SA1306A replacement 2SD 2SBI024 2SC4793 2sa1837 2SC4560
Text: Type No 2SBI024 2 S C I173 2SC2075 2SC2238 2SC2238A 2SC2238B 2SC3297 2SC3298 2SC3298A 2SC3298B 2SC3498


OCR Scan
PDF 2SA473 2SA968 2SA968A 2SA968B 2SA1305 2SA1306 2SA1306A 2SAI306B 2SB676 2SB679 2SC4793 2SA1869 2SC3498 2SC4935 replacement 2SD 2SBI024 2SC4793 2sa1837 2SC4560
2sc3288

Abstract: 2SC3311 2SC3284 2SC3289 2-4F1C 2-21F1A 2SC3293 2SC3287 2SA1309 2SA1306 2SC3298
Text: * 2SA1304 (2-10L1A) BCE 2SC3296 100* 10 0.1 25* 2SA1306 (2-10L1A) BCE 2SC3298 100* 10 0.1 25* 2SA1306A (2-10L1A) BCE 2SC3298A 100* 10 0.1 25* 2SA1306B (2-10L1A) BCE 2SC3298B 120* 4 1 0.1* 0.1 , «S PA/Vout 150 150 1.5 2 20 10 120 40 140 10 0.5 1. 5 0.5 0.05 2SC3298 ÄS PA 160 160 1. 5 20 1 160 70 240 5 0.1 1.5 0.5 0.05 2SC3298A ÄS PA 180 180 1.5 20 1 160 70 240 5 0.1 1. 5 0.5 0.05 2SC3298B ÄS PA 200 200 1.5 20 1 160 70 240 5 0.1 1.5 0.5 0.05 2SC3299 PS» 60 50 5 2 20 1 50 70 240 1


OCR Scan
PDF 2SC3279 2SC3280 2SC3281 2SC3282A 800MHz 2SC3283A 2SC3284 2SC3285 2SC3286-M 2sc3288 2SC3311 2SC3284 2SC3289 2-4F1C 2-21F1A 2SC3293 2SC3287 2SA1309 2SA1306 2SC3298
2SD2159

Abstract: 2SC2500 2SC3345 2SC3227 2SC2632 2SC105 2SC3296 2SC2879 2SC3246H 2SC3225
Text: 2SC4129 2SC 3237 2SD1912 2SC1173 2SDÌ133 2SD1762 2SC 3238 M 2 2SC2344 2SC3298 2SC2336 2SDU38


OCR Scan
PDF 2SD1247 2SC2500 2SD966 2SC3242A 2SD1384 2SD438 2SC1627A 2SD667 2SC1059 2SC3244 2SD2159 2SC2500 2SC3345 2SC3227 2SC2632 2SC105 2SC3296 2SC2879 2SC3246H 2SC3225
2SK 150A

Abstract: mg100g1al2 2SC2461 B 2SD1365 2sk30 1265N C366G MG15G1AL2 b1375 2SC102
Text: 2SC3298A 2SC3298B 2S C 3299 2SC 2562 2SC2458 2SD718 2SC3892A 2SC3547B 2SC4560 2SC4560 2SC4560 2SC4560 , 2SC1581 2 SC 1582 2SC1616 2SC1624 2SC1625 2SC1626 2SC1628 2SC1668 2SC1763 2SC1764 2SC2238, 2SC3298 2SC2238, 2SC3298 2SC3421 2SC2705 2 S C 2103A 2S C 2420 1031 R eco m m en d T y p e N o. 2SC1669 , 2SC2460B 2SC2461 R ecom m end R e p la c e m e n t T y p e N o. 2SC2238, 2SC3298 2SC2075 2SC2101 , 2SC 382TM 2SC3963 2SC2181 2SC3298 2SC1569 2SC3420 2SC3420 2SC2068 2S C 2499 2SC 3099 2SC2563 2SC


OCR Scan
PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2SK 150A mg100g1al2 2SC2461 B 2SD1365 2sk30 1265N C366G MG15G1AL2 b1375 2SC102
2005 - 2SA1306

Abstract: 2SA1306A 2SA1306 2SC3298 2SA1306B 2SC3298 2SC3298A 2SC3298B
Text: Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1306 2SA1306A 2SA1306B DESCRIPTION With TO-220Fa package Complement to type 2SC3298 , 2SC3298A , 2SC3298B APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS 2SA1306 VCBO Collector-base voltage 2SA1306A VALUE -160 Open emitter -180


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PDF 2SA1306 2SA1306A 2SA1306B O-220Fa 2SC3298 2SC3298A 2SC3298B 2SA1306 2SA1306A 2SA1306 2SC3298 2SA1306B 2SC3298B
2SC1885

Abstract: 2SC2227 2SC3298 2SD668A 2SC2200 2SC2229 2SC22388 22-28V 2sc2371 2SC2204
Text: 2SD1770 2SD1562B 2SC 22388 2SC2344 2SC2336A 2SD1770A 2SD1562B 2SC 2239 . Ä ^ 2SC3298 2SD401A


OCR Scan
PDF 2SC3142 2SC2462 2SC3082K 2SC3416 2SC2376 2SC2952 2SC3467 2SC2229 2SC1921 2SC1885 2SC2227 2SC3298 2SD668A 2SC2200 2SC2229 2SC22388 22-28V 2sc2371 2SC2204
2SA1306

Abstract: 2SA1306A 2SA1306B 2SC3298 2SA1306 2SC3298 2SC3298A 2SC3298B
Text: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1306 2SA1306A 2SA1306B DESCRIPTION ·With TO-220Fa package ·Complement to type 2SC3298 , 2SC3298A , 2SC3298B APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS 2SA1306 VCBO Collector-base voltage 2SA1306A VALUE -160 Open emitter -180


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PDF 2SA1306 2SA1306A 2SA1306B O-220Fa 2SC3298 2SC3298A 2SC3298B 2SA1306 2SA1306A 2SA1306B 2SA1306 2SC3298 2SC3298B
2SD1405

Abstract: 2SC3298B 2SC3298A 2SC3298 2SC3297 2SC3296 2SA1306B 2SA1306A 2SA1306 2SA1305
Text: 10 0.5 35/50 10 - - - Audio Drive 2SC3298 2SA1306 1.5 160 20 70~240 5 0.1 1.5 0.5 50m 100 10 0.1 25/30 10 - - - Audio Drive 2SC3298A 2SA1306A 180 20 70-240 5 0.1 1.5 0.5 50m 100 10 0.1 25/30 10 - - - Audio Drive 2SC3298B 2SA1306B 200 20 70~240 5 0.1 1.5 0.5 50m 100 10 0.1 25/30 10 - - - General


OCR Scan
PDF O-220 2SC3296 2SA1304 2SC3298 2SA1306 2SC3298A 2SA1306A 2SC3298B 2SA1306B 2SC3297 2SD1405 2SA1306B 2SA1306A 2SA1305
2SA1306

Abstract: 2SA1306A 2SA1306B 2SA1306 2SC3298 2SC3298 transistor 2SC3298
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SA1306/A/B DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown VoltageV(BR)CEO= -160V(Min)-2SA1306 = -180V(Min)-2SA1306A = -200V(Min)-2SA1306B ·Complement to Type 2SC3298 /A/B APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER 2SA1306 VALUE VCBO Collector-Base Voltage 2SA1306A


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PDF 2SA1306/A/B -160V -2SA1306 -180V -2SA1306A -200V -2SA1306B 2SC3298/A/B 2SA1306 2SA1306A 2SA1306 2SA1306A 2SA1306B 2SA1306 2SC3298 2SC3298 transistor 2SC3298
2sA1306

Abstract: 2SA1306A C5C5.1 1306B K158 2SA1306B
Text: SILICON PNP EPITAXIAL TYPE 2SA1306,1306A,1306B Unit in mm 0Z.2±O.2 POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES: . High Transition Frequency : fx=100MHz (Typ.) . Complementary to 2SC3298 , 2SC3298A , 2SC3298B MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC 2SA1306 Collector-Base Voltage 2SA1306A 2SA1306B 2SAI 306 Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range 2SA1306A


OCR Scan
PDF 2SA1306 1306B 100MHz 2SC3298, 2SC3298A, 2SC3298B 2SA1306A 2SA1306B C5C5.1 1306B K158
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