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2SC3264 Sanken Electric Co Ltd Power Bipolar Transistor, 17A I(C), 230V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT-200, 3 PIN
2SC3264 DK Sanken Electric Co Ltd TRANS NPN 230V 17A MT200
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2SC 3264 Sanken Electric Co Ltd Chip1Stop 294 $6.05 $4.74
2SC3264 Allegro MicroSystems LLC Newark element14 320 $6.11 $3.54
2SC3264 Sanken Electric Co Ltd Chip1Stop 380 $6.46 $3.52
2SC3264 Allegro MicroSystems LLC element14 Asia-Pacific 468 $8.05 $5.44
2SC3264 Allegro MicroSystems LLC Farnell element14 468 £3.50 £3.21

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2SC3264 datasheet (11)

Part Manufacturer Description Type PDF
2SC3264 Micro Commercial Components TRANS GP BJT NPN 230V 17A 3MT-200 Original PDF
2SC3264 Sanken Electric Silicon NPN Epitaxial Planar Transistor(Audio and General Purpose) Original PDF
2SC3264 Sanken Electric Power Transistor Selection Guide Original PDF
2SC3264 Various Russian Datasheets Transistor Original PDF
2SC3264 Mospec POWER TRANSISTORS(17A,230V,200W) Scan PDF
2SC3264 Mospec High-Power NPN Silicon Power Transistor Scan PDF
2SC3264 Others Japanese Transistor Cross References (2S) Scan PDF
2SC3264 Others The Transistor Manual (Japanese) 1993 Scan PDF
2SC3264 Others Transistor Substitution Data Book 1993 Scan PDF
2SC3264 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SC3264 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF

2SC3264 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2SC3264

Abstract: 2SA1295
Text: SavantIC Semiconductor Product Specification 2SC3264 Silicon NPN Power Transistors DESCRIPTION ·With MT-200 package ·Complement to type 2SA1295 APPLICATIONS ·Audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base , -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC3264 Silicon NPN Power , .2 outline dimensions 3 2SC3264 SavantIC Semiconductor Product Specification 2SC3264


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PDF 2SC3264 MT-200 2SA1295 MT-200) dissi100 2SC3264 2SA1295
2SC3264

Abstract: SE 566 IC High-Power NPN Silicon Power Transistor 50A 2SA1295 2SC3264 MOSPEC
Text: 125 Tc , TEMPERATUREfC) 150 NPN 2SC3264 17 AMPERE POWER TRANASISTOR 230 VOLTS 200 WATTS Characteristic Symbol 2SC3264 Unit Collector-Emitter Voltage VcEO 230 V Collector-Base Voltage VCBO 230 V , 2.80 0 3.25 3.65 P 0.55 0.70 2SC3264 NPN ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise , % 2SC3264 NPN ACTIVE-REGION SAFE OPERATING AREA (SOA) £ . I- z lu o: Si o ce. il a o o


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PDF 2SA1295 2SC3264 2SC3264 lc-10A Tc-100 SE 566 IC High-Power NPN Silicon Power Transistor 50A 2SA1295 2SC3264 MOSPEC
1999 - 2SC3264

Abstract: 2SA1295 MP100M 2SA1295 2SC3264
Text: 2SC3264 LAPT Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1295) sElectrical Characteristics sAbsolute maximum ratings (Ta=25°C) Symbol 2SC3264 Unit 230 Symbol V ICBO VCBO Application : Audio and General Purpose External Dimensions MT-200 (Ta=25°C) Conditions 2SC3264 Unit VCB=230V 100max µA VEB=5V 100max 230min 24.4±0.2 µA IC=25mA 2.1 V VCEO 230 V IEBO VEBO 5 V V(BR)CEO IC 17 A hFE VCE


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PDF 2SC3264 2SA1295) MT-200 100max 230min 50min 60typ 2SC3264 2SA1295 MP100M 2SA1295 2SC3264
2SA1295

Abstract: 2SC3264 transistor 2sC3264
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3264 DESCRIPTION ·High Collector-Emitter Breakdown VoltageV(BR)CEO= 230V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1295 APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Emitter Voltage VEBO Emitter-Base , Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3264 ELECTRICAL


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PDF 2SC3264 2SA1295 2SA1295 2SC3264 transistor 2sC3264
2SC3264

Abstract: transistor 2sa1295 2SA1295 2SC3264 2sa1295
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1295 DESCRIPTION ·High Collector-Emitter Breakdown VoltageV(BR)CEO= -230V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3264 APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w -230 V -230 V -5 V IC Collector Current-Continuous -17 A


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PDF 2SA1295 -230V 2SC3264 -230V; 2SC3264 transistor 2sa1295 2SA1295 2SC3264 2sa1295
2000 - 2SA1295 2SC3264

Abstract: 2SA1694 2SC4467 2SA1186 2SC2837 T03PF transistor 2sa1494 MT100 2sa1492 2sc3856 2SD2493 transistor 2sc2922 transistor 2sb1624 2sd2493
Text: /2SC2922 200 2SA1295/ 2SC3264 230 150 130 P C (W) 80 100 125 160 40 180 15 230 160 180 17 35 35 50 40 MT200


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PDF 2SA1725/2SC4511 2SA1726/2SC4512 2SA1693/2SC4466 2SA1907/2SC5099 FM100 T03PF) 2SA1908/2SC5100 2SA1694/2SC4467 2SA1909/2SC5101 2SA1673/2SC4388 2SA1295 2SC3264 2SA1694 2SC4467 2SA1186 2SC2837 T03PF transistor 2sa1494 MT100 2sa1492 2sc3856 2SD2493 transistor 2sc2922 transistor 2sb1624 2sd2493
2SC3216

Abstract: 2SA1295 2SC3264 2SC3214 2SC3217-M 2SC3264 2SC3251 2SC3217 2SA1285 2SC3215 2sc3246
Text: 2SC3263 PSW 230 230 15 130 100 230 40 4 5 2 5 0. 5 2SC3264 f PSW 230 230 17 200 100 230 40 4 5 2 5 , 2SC3263 60* 12 0. 3* 0.5* 2. 4* 2SA1295 (MT200) BCE 2SC3264 120* 5 0.01 13* 2SA1298 (SC


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PDF EPttTc-25 2SC3214 2SC3215 2SC3216 2SC3217-M 800MHz 2SC3218-M 2SC3225 2SC3233 2SC3216 2SA1295 2SC3264 2SC3214 2SC3264 2SC3251 2SC3217 2SA1285 2SC3215 2sc3246
2SC3264

Abstract: 2SC32 2SA1295 transistor 2sa1295 2SA1295 2SC3264
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1295 DESCRIPTION ·High Collector-Emitter Breakdown VoltageV(BR)CEO= -230V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3264 APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO Emitter-Base Voltage -5 V IC


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PDF 2SA1295 -230V 2SC3264 -230V; 2SC3264 2SC32 2SA1295 transistor 2sa1295 2SA1295 2SC3264
Not Available

Abstract: No abstract text available
Text: , Una. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SA1295 DESCRIPTION • High Collector-Emitter Breakdown VoltageV(BR)CEo= -230V(Min) • Good Linearity of I>E • Complement to Type 2SC3264 PIN 1. BASE 2. COLLECTOR 3. EMITTER APPLICATIONS • Designed for audio and general purpose applications. 1 MT-200 package 2 3 ABSOLUTE MAXIMUM RATINGS(Ta=25r) SYMBOL PARAMETER VALUE


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PDF 2SA1295 -230V 2SC3264 MT-200 -25mA -230V;
2SA1295

Abstract: 2SA1295 2SC3264 2SC3264 general purpose power transistors
Text: SavantIC Semiconductor Product Specification 2SA1295 Silicon PNP Power Transistors DESCRIPTION ·With MT-200 package ·Complement to type 2SC3264 APPLICATIONS ·Audio and general purpose applications PINNING (see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter


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PDF 2SA1295 MT-200 2SC3264 MT-200) 2SA1295 2SA1295 2SC3264 2SC3264 general purpose power transistors
2sa11

Abstract: 2SA12 2SA17 2SC3264 2SD2493 2SA13 C3519A 2SD2401 2SD2390 2SA16
Text: / 2SC3264 230 150 130 pc ;w'. 80 Veto (V) It 14 A hFE (mm) fr (MHz) 50 60 50 Package


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PDF 2SA17 2SC4511 2SC4512 2SA16 2SC4466 2SA19 2SC5099 FM100 T03PF) 2sa11 2SA12 2SC3264 2SD2493 2SA13 C3519A 2SD2401 2SD2390
2SA1295

Abstract: 2SC3264 2SA1295 2SC3264
Text: AOK AOK Semiconductor Product Spec ification Silicon PNP Power Transistors 2SA1295 DESCRIPTION • With MT-200 package • Complement to type 2SC3264 APPLICATIONS • Audio and general purpose applications PINNING (see Fig.2) PIN DESCRIPTION 1 Base o Collector:conr>ected to mounting base 3 Emitter Absolute maximum ratings(Ta=25iC) SYMBOL PARAMETER CONDITIONS VALUE UNIT Vcbo Collector-base voltage Open emitter -230 V Veto Collector-emitter voltage Open base -230 V Ve bo Emitter-base voltage Open collector


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PDF 2SA1295 MT-200 2SC3264 2SA1295 2SC3264
2002 - 2SC3264

Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1295 Features · · PNP Silicon Power Transistors Complement to type 2SC3264 Audio and general applications Maximum Ratings Symbol V CEO V CBO V EBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating 230 230 5.0 17 200 -55 to +150 -55 to +150 MT-200 Unit


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PDF 2SA1295 2SC3264 MT-200 2SC3264
K 3264 transistor

Abstract: No abstract text available
Text: SANKEN ELECTRIC CO LTD SSE » ■7TTD741 DDOCHSG 40S « S A K J ——^ Silicon NPN Triple Diffused Planar 2SC3264 Ö 'L A P T ☆Complement to type 2SA1295 Application Example : • Outline Drawing 3 . . MT-200 Audio and General Purpose Electrical Characteristics Symbol Absolute M ax im u m Ratings Symbol Vceo (Ta=25*C) Unit 2SC 3264 230 ic=r <^7 ' V Vceo 230 V Vebo 5 V Ic 17 Ib 5 200 (Tc = 25'C) W Tj


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PDF 7TTD741 2SC3264 2SA1295 MT-200 100max 230mm 40min MT-25 T0220) K 3264 transistor
2003 - 2SC326

Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC3264 Features · NPN Silicon Transistors With MT-200 package Maximum Ratings Symbol Rating Rating MT-200 Unit VCEO Collector-Emitter Voltage 230 V VCBO Collector-Base Voltage 230 V VEBO Emitter-Base Voltage 5.0 V IB Peak Collector Current 5.0 A IC Collector Current 17 A PC Collector power dissipation 200 W TJ Junction Temperature 150


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PDF 2SC3264 MT-200 MT-200 12Vdc) 25mAdc) 2SC326
2005 - 2SA1295

Abstract: 2SC3264
Text: JMnic Product Specification 2SA1295 Silicon PNP Power Transistors DESCRIPTION With MT-200 package Complement to type 2SC3264 APPLICATIONS Audio and general purpose applications PINNING (see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -230 V VCEO


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PDF 2SA1295 MT-200 2SC3264 MT-200) -230V; 2SA1295 2SC3264
sanken power transistor 2SA1216

Abstract: 2SC2922 SANKEN 2SC2922 sanken transistor Sanken 2SC2921 sanken 2sc2922 sanken 2sa1216 transistor 2sb1624 2sd2493 Sanken Transistor Mt 200 D01EC0 2sc2921 sanken
Text: 2SC3264 80 100 125 130 130 130 150 200 200 150 150 150 160 180 230 160 180 230


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PDF 2SA1725 2SA1726 2SA1693 2SA1907 2SA1908 2SA1694 2SA1909 2SA1673 2SA1695 2SA1492 sanken power transistor 2SA1216 2SC2922 SANKEN 2SC2922 sanken transistor Sanken 2SC2921 sanken 2sc2922 sanken 2sa1216 transistor 2sb1624 2sd2493 Sanken Transistor Mt 200 D01EC0 2sc2921 sanken
2SA1295

Abstract: 150W TRANSISTOR AUDIO AMPLIFIER 2SA1295 2SC3264 2SC3264 transistor 2sa1295
Text: ^ MOS PEC HIGH-POWER PNP SILICON POWER TRANSISTORS .designed for use in general-purpose amplifier and switching application . FEATURES: * Recommend for 150W High Fiderity Audio Frequency Amplifier Output stage * Complementary to 2SC3264 MAXIMUM RATINGS FIGURE -1 POWER DERATING 200 1 175 1 150 z 125 < 0. <3 100 Q 75 o: § 50 o -Ô 25 CL 0 \ \ S \ 25 50 75 100 Tc ,TEMPERATURE(°C) 125 150 PNP 2SA1295 17 AMPERE POWER TRANASISTOR


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PDF 2SC3264 2SA1295 2SA1295 Tc-100Â 150W TRANSISTOR AUDIO AMPLIFIER 2SA1295 2SC3264 2SC3264 transistor 2sa1295
2007 - 2SC3264

Abstract: 2SA1295 2SC3264 2SA1295 DSA0016507
Text: 2SC3264 LAPT Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1295) sElectrical Characteristics sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit 230 Symbol V ICBO VCBO Application : Audio and General Purpose External Dimensions MT-200 (Ta=25°C) Conditions Ratings Unit VCB=230V 100max µA VEB=5V 100max 230min 24.4±0.2 µA IC=25mA 2.1 V VCEO 230 V IEBO VEBO 5 V V(BR)CEO IC 17 A hFE VCE


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PDF 2SC3264 2SA1295) MT-200 100max 230min 50min 60typ 250typ 2SC3264 2SA1295 2SC3264 2SA1295 DSA0016507
1999 - 2SA1295

Abstract: 2SC3264
Text: 2SA1295 LAPT Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3264 ) sAbsolute maximum ratings Symbol sElectrical Characteristics (Ta=25°C) External Dimensions MT-200 (Ta=25°C) Unit ­230 Symbol V Conditions 2SA1295 Unit ICBO 2SA1295 VCBO Application : Audio and General VCB=­230V ­100max µA 36.4±0.3 24.4±0.2 VEB=­5V ­100max µA IC=­25mA ­230min V VCEO ­230 V IEBO VEBO ­5 V V(BR)CEO IC ­17 A hFE VCE


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PDF 2SA1295 2SC3264) MT-200 100max 230min 50min 35typ 2SA1295 2SC3264
2007 - 2SA1295

Abstract: 2SC3264 DSA0016502
Text: 2SA1295 LAPT Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3264 ) sAbsolute maximum ratings Symbol sElectrical Characteristics (Ta=25°C) External Dimensions MT-200 (Ta=25°C) Unit ­230 Symbol V Conditions Ratings Unit ICBO Ratings VCBO Application : Audio and General VCB=­230V ­100max µA 36.4±0.3 24.4±0.2 VEB=­5V ­100max µA IC=­25mA ­230min V VCEO ­230 V IEBO VEBO ­5 V V(BR)CEO IC ­17 A hFE VCE


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PDF 2SA1295 2SC3264) MT-200 100max 230min 50min 35typ 500typ 2SA1295 2SC3264 DSA0016502
2002 - transistor 2SA1216

Abstract: transistor 2SC4467 2sc2837 sap16p
Text: 2-1 Power Transistors 2-1-1 Transistors for Audio Amplifiers Chip Single Transistor General 2SA1725 2SA1726 2SA1693 2SA1907 2SC4511 2SB1686 2SC4512 2SB1659 2SC4466 2SC5099 2SB1685 2SB1687 2SA1908 2SA1694 2SA1909 2SC5100 2SB1587 2SC4467 2SC5101 2SB1559 2SB1588 2SA1860 2SA1673 2SA1695 2SC4388 2SC4468 2SA1186 2SA1303 2SA1386 2SA1492 2SC3856 2SA1386A 2SA1294 2SA1215 2SA1493 2SC3857 2SB1648 2SA1216 2SA1494 2SC3858 2SA1295 2SC3264 2SC2922 2SD2561 2SC3519A 2SC3263 2SB1570 2SC2921 2SD2401 2SC2837 2SB1560


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PDF 2SA1725 2SA1726 2SA1693 2SA1907 2SC4511 2SB1686 2SC4512 2SB1659 2SC4466 2SC5099 transistor 2SA1216 transistor 2SC4467 2sc2837 sap16p
2001 - SAP16

Abstract: 2Sc4495 2sc2837 2sa1216 2SB1686 SAP16N 2SC3858 2SA1494 2SD2401 2SD2562 SAP09n to 3p
Text: 2-1 Power Transistors 2-1-1 Transistors for Audio Amplifiers Chip Single Transistor General 2SA1725 2SA1726 2SA1693 2SA1907 2SC4511 2SB1686 2SC4512 2SB1659 2SC4466 2SC5099 2SB1685 2SB1687 2SA1908 2SA1694 2SA1909 2SC5100 2SB1587 2SC4467 2SC5101 2SB1559 2SB1588 2SA1860 2SA1673 2SA1695 2SC4388 2SC4468 2SA1186 2SA1303 2SA1386 2SA1492 2SC3856 2SA1386A 2SA1294 2SA1215 2SA1493 2SC3857 2SB1648 2SA1216 2SA1494 2SC3858 2SA1295 2SC3264 2SC2922 2SD2561 2SC3519A 2SC3263 2SB1570 2SC2921 2SD2401 2SC2837 2SB1560


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PDF 2SA1725 2SA1726 2SA1693 2SA1907 2SC4511 2SB1686 2SC4512 2SB1659 2SC4466 2SC5099 SAP16 2Sc4495 2sc2837 2sa1216 SAP16N 2SC3858 2SA1494 2SD2401 2SD2562 SAP09n to 3p
25C3264

Abstract: 2sa1643 2SC3519a
Text: Complemenlary 2SC3264 Complementa1 ", 25C3264 Complememarv 2SC3515 100 150 200 30 130 200 125 i î i


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PDF 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA148E 2SA1492 25C3264 2sa1643 2SC3519a
transistor 2SB618

Abstract: 3A/fllnm 80
Text: 2SC3181 NPN 2SA1265 PNP 2SC3182 NPN 2SA1295 PNP 2SC3264 NPN 2SA1301 PNP


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PDF 2SA733 2SJ74 2SK170 2SJ76 2SK213 2SJ77 2SK214 2SJ103 2SK246 2SJ109 transistor 2SB618 3A/fllnm 80
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