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2SC3072 Vishay Intertechnologies Bristol Electronics 400 - -
2SC3072-B(Q) Toshiba America Electronic Components Chip1Stop 350 $3.57 $3.10
2SC3072-B(T6L1,NQ) Toshiba America Electronic Components Chip1Stop 1,750 $3.57 $2.88
2SC3072-C(Q) Toshiba America Electronic Components Chip1Stop 300 $3.57 $3.10
2SC3072-C(T6L1,NQ) Toshiba America Electronic Components Chip1Stop 1,450 $3.32 $2.88

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2SC3072 datasheet (35)

Part Manufacturer Description Type PDF
2SC3072 Kexin Silicon NPN Epitaxial Original PDF
2SC3072 Toshiba Silicon NPN Transistor Original PDF
2SC3072 Others Transistor Shortform Datasheet & Cross References Scan PDF
2SC3072 Others Japanese Transistor Cross References (2S) Scan PDF
2SC3072 Others Catalog Scans - Shortform Datasheet Scan PDF
2SC3072 Others Catalog Scans - Shortform Datasheet Scan PDF
2SC3072 Others Scan PDF
2SC3072 Others The Transistor Manual (Japanese) 1993 Scan PDF
2SC3072 Others Transistor Substitution Data Book 1993 Scan PDF
2SC3072 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SC3072 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SC3072 Toshiba Silicon NPN transistor for strobe flash applications and medium power amplifier applications Scan PDF
2SC3072 Toshiba SILICON NPN EPITAXIAL TYPE (PCT PROCESS) TRANSISTOR Scan PDF
2SC3072(2-7B1A) Toshiba 2SC3072 - TRANSISTOR 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7B1A, 3 PIN, BIP General Purpose Small Signal Original PDF
2SC3072(2-7B2A) Toshiba 2SC3072 - TRANSISTOR 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-7B2A, 3 PIN, BIP General Purpose Small Signal Original PDF
2SC3072(2-7J1A) Toshiba 2SC3072 - TRANSISTOR 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7J1A, 3 PIN, BIP General Purpose Small Signal Original PDF
2SC3072A Toshiba 2SC3072 - TRANSISTOR 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7B1A, 3 PIN, BIP General Purpose Small Signal Original PDF
2SC3072A Others Transistor Shortform Datasheet & Cross References Scan PDF
2SC3072A Toshiba Silicon NPN Transistor Scan PDF
2SC3072-A(2-7B1A) Toshiba 2SC3072 - TRANSISTOR 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7B1A, 3 PIN, BIP General Purpose Small Signal Original PDF

2SC3072 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2005 - c3072

Abstract: 2SC3072 c3072 npn
Text: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications · Unit: mm High DC current gain : hFE = 140 to 450 , (typ.) 1 2005-02-01 2SC3072 Electrical Characteristics (Ta = 25°C) Characteristics , 2005-02-01 2SC3072 IC ­ VBE IC ­ VCE 8 10 Common emitter VCE = 2 V IC (A) 200 8 , VCE 30 (V) 2005-02-01 2SC3072 RESTRICTIONS ON PRODUCT USE 030619EAA · The


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PDF 2SC3072 c3072 2SC3072 c3072 npn
2003 - C3072

Abstract: 2SC3072 c3072 npn
Text: 2SC3072 NPN (PCT) 2SC3072 · : mm : hFE = 140~450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 () (VCE = 2 V, IC = 4 A) · : VCE (sat) = 1.0 V () (IC = 4 A, IB = 0.1 A) · , : (//) ( / ) () () 1 2010-02-05 2SC3072 (Ta = 25 , 2002/95/EC) 2 2010-02-05 2SC3072 IC ­ VBE IC ­ VCE 10 8 VCE = 2 V 8 (A , 2SC3072 · · · · "" · · · ·


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PDF 2SC3072 C3072 2SC3072 c3072 npn
MAX12001

Abstract: 2sc3072
Text: TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC3072 2SC3072 STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS (A) 6.8MAX., 5.210.2 P in Unit in mm rI 'l 0.6MAX. - t f - · · · High DC Current Gain : hpE = 140~450 (\Tn-n = 9. V T n , .) 1 2001 11-05 - TO SH IBA 2SC3072 ELECTRICAL CHARACTERISTICS (Te = 25 , 11-05 - 2SC3072 TO SH IBA 2SC3072 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is


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PDF 2SC3072 95MAX. 95IV1AX. MAX12001 2sc3072
2010 - 2SC3072

Abstract: C3072
Text: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications · Unit: mm High DC current gain : hFE = 140 to 450 , report and estimated failure rate, etc). 1 2010-02-05 2SC3072 Electrical Characteristics (Ta = , substances in electrical and electronic equipment. 2 2010-02-05 2SC3072 IC ­ VBE IC ­ VCE 10 , 2SC3072 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and affiliates


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PDF 2SC3072 2SC3072 C3072
C3072

Abstract: c3072 npn 2SC3072
Text: 2SC3072 NPN (PCT) 2SC3072 · : mm : hFE = 140~450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 () (VCE = 2 V, IC = 4 A) · : VCE (sat) = 1.0 V () (IC = 4 A, IB = 0.1 A) · , : (//) (/ ) ( ) () JEDEC JEITA 2-7J1A : 0.36 g () 1 2006-11-07 2SC3072 (Ta = 25 , 2006-11-07 2SC3072 IC ­ VBE IC ­ VCE 10 8 VCE = 2 V (A) 200 8 150 6 IC , 2SC3072 20070701-JA · · " " · · · RoHS RoHS · 4


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PDF 2SC3072 20070701-JA C3072 c3072 npn 2SC3072
transistor LT 5210

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC3072 2SC3072 STROBE FLASH APPLICATIONS M EDIUM PO W ER AM PLIFIER APPLICATIONS (A ) 6.8M A X 5.2 ±0.2 t Unit in mm 0.6 M A X . · · · High DC Current Gain : hFE = 70 (Min.) (VCE = 2 V, IC = 4A ) Low Collector , it h o u t n otice. # # 1999 03-11 1/3 - TOSHIBA 2SC3072 ELECTRICAL , 1999 03-11 - 2SC3072 3/3


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PDF 2SC3072 Voltag00 transistor LT 5210
Not Available

Abstract: No abstract text available
Text: T O SH IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC3072 STROBE FLASH APPLICATIONS. 2SC3072 MEDIUM POWER AMPLIFIER APPLICATIONS. · · · High DC Current Gain : hpE -140~450 (Vç e = 2V, I ç = 0.5A) h p E -7 0 (Min.) (Vç e = 2V, I ç = 4A) Low Collector Saturation Voltage , . 1997 09-01 1/3 - T O SH IB A 2SC3072 ELECTRICAL CHARACTERISTICS (Ta = 25 , pF 70 - 1.0 1.5 - - 1997 09-01 2/3 - TO SH IB A 2SC3072 IC - VCE


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PDF 2SC3072
2004 - Not Available

Abstract: No abstract text available
Text: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 , €• TOSHIBA 2-7J1A Weight: 0.36 g (typ.) 1 2004-07-07 2SC3072 Electrical Characteristics (Ta = , 2SC3072 IC – VBE IC – VCE 8 10 Common emitter VCE = 2 V IC (A) 200 8 150 , 3 Collector-emitter voltage 3 10 VCE 30 (V) 2004-07-07 2SC3072


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PDF 2SC3072
2002 - c3072

Abstract: 2SC3072 c3072 npn
Text: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications · Unit: mm High DC current gain : hFE = 140 to 450 , Weight: 0.36 g (typ.) 1 2002-07-23 2SC3072 Electrical Characteristics (Ta = 25 , 2002-07-23 2SC3072 IC ­ VBE IC ­ VCE 10 8 VCE = 2 V (A) 150 6 IC 100 6 , Collector-emitter voltage 3 10 VCE 30 (V) 2002-07-23 2SC3072 RESTRICTIONS ON PRODUCT USE


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PDF 2SC3072 c3072 2SC3072 c3072 npn
2002 - c3072 npn

Abstract: c3072
Text: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications · High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = , 2SC3072 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off , manufacture: last decimal digit of the year of manufacture 2 2002-07-23 2SC3072 IC ­ VCE 10 , temperature Ta (°C) Collector-emitter voltage VCE (V) 3 2002-07-23 2SC3072 RESTRICTIONS ON


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PDF 2SC3072 c3072 npn c3072
Not Available

Abstract: No abstract text available
Text: TOSHIBA 2SC3072 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC3072 Unit in mm STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hpg = 140~450 (Vc e = 2 V, IC = 0.5 A) hFE = 70 (Min.) (Vc e = 2 V, Ic = 4A) Low Collector Saturation Voltage : VCE (sat) = 1-0 V (Max.) (IC = 4 A, IB = 0.1 A) High Power Dissipation , change without notice. 1999 06-16 1/3 - TOSHIBA 2SC3072 ELECTRICAL CHARACTERISTICS (Ta = 25Â


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PDF 2SC3072
2SC3072

Abstract: No abstract text available
Text: TOSHIBA 2SC3072 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2 S C 3 0 7 2 STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS • High DC Current Gain : hFE = 140-450 , % (Max.) 1 2001-05-24 TOSHIBA 2SC3072 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL , 2001-05-24 TOSHIBA 2SC3072 IC - VCE IC - Vre 10 COMMON EMITTER Ta = 25°C 20 0 , 2SC3072 RESTRICTIONS ON PRODUCT USE _000707E • TOSHIBA is continually working to improve the quality


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PDF 2SC3072 2SC3072
2SC3072

Abstract: C3072
Text: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications · Unit: mm High DC current gain : hFE = 140 to 450 , : 0.36 g (typ.) 1 2006-11-09 2SC3072 Electrical Characteristics (Ta = 25°C) Characteristics , A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-09 2SC3072 , VCE (V) 2006-11-09 2SC3072 RESTRICTIONS ON PRODUCT USE 20070701-EN · The information


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PDF 2SC3072 2SC3072 C3072
2SC3072

Abstract: No abstract text available
Text: 2SC3072 STROBE FLASH APPLICATIONS. SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Unit in mm M ED IUM PO W ER AMPLIFIER APPLICATIONS. · · · High DC C urrent Gain : hpE = 140-450 (Vc e = 2V, I ç = 0.5A) hFE = 70 (Min.) ( V = 2V, I = 4A) Low Collector Saturation Voltage : v CE(sat) = 1 , (FIN) EMITTER -JEDEC -EIAJ T0SHIBA(A)2-7B1A (B)2-7B2A Weight : 0.36g (Max.) 468 2SC3072 , DISSIPATION pc 2SC3072 DC CURRENT CAIN hpE COLLECTOR


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PDF 2SC3072 2SC3072
2006 - Not Available

Abstract: No abstract text available
Text: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications · High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = , , etc). JEDEC JEITA TOSHIBA 2-7J1A Weight: 0.36 g (typ.) 1 2006-11-09 2SC3072 , indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-09 2SC3072 IC ­ VCE 10 , Ta (°C) Collector-emitter voltage VCE (V) 3 2006-11-09 2SC3072 RESTRICTIONS


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PDF 2SC3072
2SC3072

Abstract: No abstract text available
Text: TOSHIBA 2SC3072 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2 S C 3 0 7 2 STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS • High DC Current Gain : hFE = 140-450 (VCE = 2V, le = 0.5 A) hFE = 70 (Min.) (VCE = 2 V, IC = 4 A) • Low Collector Saturation Voltage , to change without notice. 1999-06-16 1/3 TOSHIBA 2SC3072 ELECTRICAL CHARACTERISTICS (Ta = 25 , : 300-450 1999-06-16 2/3 TOSHIBA 2SC3072 IC - VCE ic - Vbe 10 COMMON EMITTER Ta = 25Â


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PDF 2SC3072 2SC3072
2SC3072

Abstract: No abstract text available
Text: TOSHIBA 2SC3072 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2 S C 3 0 7 2 STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS • High DC Current Gain : hpE = 140-450 (VCE = 2 V, le = 0.5 A) hFE = 70 (Min.) (Vce = 2 V, le = 4 A) • Low Collector Saturation Voltage , CopyRight 2003 TOSHIBA 2SC3072 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST , Powered by ICminer.com Electronic-Library Service CopyRight 2003 TOSHIBA 2SC3072 IC - VCE IC - VßE 3


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PDF 2SC3072 101--kH- 55J35S 5K55S 2SC3072
2001 - Power MOLD

Abstract: 2SC3303 TE16L 2SC380 2sc3233 STA1100 2sc3072
Text: (POWER MOLD) Type No. NPN 2SC3072 ­ 2SD1224 2SD1222 2SD1223 PNP ­ 2SA1242 ­ 2SB907 2SB908 IC (A) 5 5 1.5


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PDF 2SC3075 2SC3405 2SD1220 2SC2983 2SD1160 2SC3233 2SD1221 2SC3805 2SC4203 2SC3076 Power MOLD 2SC3303 TE16L 2SC380 STA1100 2sc3072
2SC3096

Abstract: 2SC3071 2SC3082K 2SC3058A 2SC3057 2SC3056A 2SC3056 2SC3080 2SC3089 2SC3067
Text: . 002 2SC3072 PA/;hnf 50 20 5 1 10 0.1 40 140 450 2 0.5 1 4 0.1 2SC3074 JUS PSW 60 50 5 1 20 1 50 70 , 2SC3070 150* 10 0.01 6.5* SC-51 ECB 2SC3071 100* 2 0. 5 40* SC-64 BCE 2SC3072 120* 4 1


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PDF 2SC3056 2SC3056A 2SC3057 2SC3058 2SC3058A 2SC3059 2SC3060 3078M 2SC3079M 2SC3080 2SC3096 2SC3071 2SC3082K 2SC3058A 2SC3056 2SC3080 2SC3089 2SC3067
2122L

Abstract: 2SD1878 2SD1670 2SD1586 2SD1275A 2SD1273 2SC4547 m 2120 2sd1417 2sd1033
Text: 2SD1879 2SD1623 2SC3326 2SD1221 2SD1631 2SD1631 2SC3072 2SD596 2SD1033 2SM700 2SC3518 2SD560


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PDF 2SD2091 2SD2092 2SD2093 2SD2094 2SD2095 2SD2096 2SD2097 2SD2098 2SD2099 2SD2100 2122L 2SD1878 2SD1670 2SD1586 2SD1275A 2SD1273 2SC4547 m 2120 2sd1417 2sd1033
c3072

Abstract: c3072 npn 2SC3072
Text: Transistors SMD Type Silicon NPN Epitaxial 2SC3072 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High DC current gain. +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.2 9.70 -0.2 High power dissipation. +0.15 0.50 -0.15 Low collector saturation voltage. 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum


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PDF 2SC3072 O-252 C3072 c3072 c3072 npn 2SC3072
2SD1810

Abstract: 2SD1694 2SD1111 2SD1392 2SD1328 2SC1280A 2SC4209 2SC3145 2SC2618 2SC4350
Text: 2SC3518 2SD1719 2SD 1804 , 2SC3076 2SD1448 2SD1775 2S0 1805 < — ¥ 2SC3072 2SD1719


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PDF 2SC4210 2SD596 2SC2618 2SD1328 2SC4209 2SD780A 1782K 2SC4209 2SD602A 2SD1810 2SD1694 2SD1111 2SD1392 2SD1328 2SC1280A 2SC3145 2SC2618 2SC4350
Not Available

Abstract: No abstract text available
Text: 2SC3072 STROBO FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL T Y P E Unit in i r a n FEATURES: . High DC Current Gain: hFE=140-~450(VCE=2V, IC=0.5A) hFE=70(Min.) (VcE=2V, Ic =4A) . Low Collector Saturation Voltage : VCE(sat)=1.0V(Max.) (Ic=4A, Ib =0.1A) . High Power Dissipation : Pc=10W (Tc=25°C), Pc=1.0W (Ta=25°C) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base


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PDF 2SC3072 T11RAT10
2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SD2088 2SC3303 2SC4532 2SA1803 2sc4408 GT10G102 2S0635
Text: 2SC2555 2SC2562 2SC2655 2SC2703 2SC2705 2SC2792 2SC2983 2SC3072 2SC3074 2SC3075 2SC3076 2SC3148 2SC3180N


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PDF 2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SD2088 2SC3303 2SC4532 2SA1803 2sc4408 GT10G102 2S0635
high frequency diode

Abstract: 15536-1 1SS1 "high frequency diode" 2SC4116 A1873 flowchart 2sc3072 TC7S
Text: Exam ples G eneral TC4S Series G eneral X I Pow er Mold 2SC3074 2SA 1244 2SC3072 2SA1242


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PDF RN1421 RN2421 100Vjy± 2SC2873 2SA1213 2D01F HN2D01FU 1SS308 HN1D01F 1D02F high frequency diode 15536-1 1SS1 "high frequency diode" 2SC4116 A1873 flowchart 2sc3072 TC7S
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