The Datasheet Archive

2SC2669 datasheet (22)

Part Manufacturer Description Type PDF
2SC2669 Others Transistor Shortform Datasheet & Cross References Scan PDF
2SC2669 Others Japanese Transistor Cross References (2S) Scan PDF
2SC2669 Others Cross Reference Datasheet Scan PDF
2SC2669 Others Shortform Transistor PDF Datasheet Scan PDF
2SC2669 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SC2669 Others The Transistor Manual (Japanese) 1993 Scan PDF
2SC2669 Others High Frequency Device Data Book (Japanese) Scan PDF
2SC2669 Others Transistor Substitution Data Book 1993 Scan PDF
2SC2669 Others The Japanese Transistor Manual 1981 Scan PDF
2SC2669 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SC2669 Toshiba Transistor Silicon NPN Epitaxial Planar Type (PCT Process) Scan PDF
2SC2669 Toshiba TRANSISTOR (HIGH FREQUENCY AMPLIFIER APPLICATIONS) Scan PDF
2SC2669 Toshiba NPN Transistor Scan PDF
2SC2669 Toshiba TO-92 Mini Package Transistors / Junction FETs Scan PDF
2SC2669-O Others Transistor Shortform Datasheet & Cross References Scan PDF
2SC2669O Toshiba Silicon NPN Epitaxial Planar Transistors Scan PDF
2SC2669-R Others Transistor Shortform Datasheet & Cross References Scan PDF
2SC2669R Toshiba Silicon NPN Epitaxial Planar Transistors Scan PDF
2SC2669-R Toshiba TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE(PCT PROCESS) Scan PDF
2SC2669-Y Others Transistor Shortform Datasheet & Cross References Scan PDF

2SC2669 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2SC2669

Abstract: No abstract text available
Text: Transfer Admittance (2 ) SYMBOL VCE IE Sie Cie Eoe Coe 2SC2669-R 6 -1 0.58 53 1.9 2.6 38 - 0 .7 9 5.7 -9 0 2SC 2669-0 6 -1 0.41 46 2.7 2.8 38 - 0 .8 3 5.7 -9 0 2SC2669-Y 6 -1 0.26 38 4.8 3.6 38 , Admittance SYMBOL VCE Sie Cie Soe Coe lyfel tffe lyrel ^re 2SC2669-R 6 -1 1.04 49 10 2.7 37 - 9 .6 120 -9 0 2SC 2669-0 6 -1 0.85 43 15 2.9 37 - 1 0 .4 120 -9 0 2SC2669-Y 6 -1 0.65 36 28 3.6 37 -1 1 , ~240 fT Cob Cc'rbb' Gpc R : 40~80, 100 - - 27 303 2SC2669 12pF (!)-© O.lmmjl UEW


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PDF 2SC2669 2SC2669
2SC2669

Abstract: 2SC2669-0 2SC2669-R 2SC2669-Y
Text: °C) CHARACTERISTIC SYMBOL 2SC2669-R 2SC2669-0 2SC2669-Y UNIT Collector-Emitter Voltage VCE 6 6 6 V Emitter Current , CIRCUIT Y PARAMETERS (Typ.) (1) (COMMON EMITTER f = 455kHz, Ta = 25°C) CHARACTERISTIC SYMBOL 2SC2669-R 2SC2669-0 2SC2669-Y UNIT Collector-Emitter Voltage VCE 6 6 6 V Emitter Current IE -1 -1 -1 mA Input , TOSHIBA 2SC2669 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE (PCT PROCESS) 2 S C 2 6 , and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 326 TOSHIBA 2SC2669


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PDF 2SC2669 2SC2669 2SC2669-0 2SC2669-R 2SC2669-Y
2SC2669

Abstract: 2SC2669-0 2SC2669-R 2SC2669-Y
Text: 455kHz, Ta = 25°C) CHARACTERISTIC SYMBOL 2SC2669-R 2SC2669-0 2SC2669-Y UNIT Collector-Emitter Voltage , -90 -90 -90 o (2) (COMMON EMITTER f= 10.7MHz, Ta = 25°C) CHARACTERISTIC SYMBOL 2SC2669-R 2SC2669-0 2SC2669-Y UNIT Collector-Emitter Voltage VCE 6 6 6 V Emitter Current IE -1 -1 -1 mA Input Conductance , TOSHIBA 2SC2669 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE (PCT PROCESS) 2 S C 2 6 , /6 TOSHIBA 2SC2669 INPUT Ro- = 50f) 0.05 «F ©-it— a


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PDF 2SC2669 55MAX. 2SC2669 2SC2669-0 2SC2669-R 2SC2669-Y
Not Available

Abstract: No abstract text available
Text: ^fe |yrel ^re 2SC2669-R 6 -1 2SC2669-0 2SC2669-Y 6 -1 0.58 53 1.9 0.41 46 2.7 2.6 2.8 38 -0.79 5.7 -9 0 38 -0.83 5.7 -9 0 2SC2669-R 2SC2669-0 6 -1 , 2SC2669-Y 6 -1 0.65 36 28 3.6 37 -11.5 140 -9 0 UNIT V mA mS pF (i S pF mS O p.S , TOSHIBA 2SC2669 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE (PCT PROCESS) 2SC2669 Unit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS • • High Power Gain : Gpe =


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PDF 2SC2669
2009 - 2SC2669

Abstract: 2sc2669-o
Text: transfer admittance Symbol VCE IE gie Cie goe Coe yfe fe yre re 2SC2669-R 6 -1 0.58 53 1.9 2.6 38 -0.79 5.7 -90 2SC2669-O 6 -1 0.41 46 2.7 2.8 38 -0.83 5.7 -90 2SC2669-Y 6 -1 0.26 38 4.8 3.6 38 -0.92 6.2 -90 , Symbol VCE IE gie Cie goe Coe yfe fe yre re 2SC2669-R 6 -1 1.04 49 10 2.7 37 -9.6 120 -90 2SC2669-O 6 -1 0.85 43 15 2.9 37 -10.4 120 -90 2SC2669-Y 6 -1 0.65 36 28 3.6 37 -11.5 140 -90 Unit V mA mS pF S pF mS , 2SC2669 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2669 High


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PDF 2SC2669 2SC2669 2sc2669-o
3SK73

Abstract: 3SK73Y 3SK101 3SK73 gr SC1815 2SK241GR 3SK73-Y 3SK101-Y 2SK241-GR 2SC2669
Text: 2 k 4.7 k 0.01 µF 100 k 1SV103 2SC2669 VCO BAFFER 2SK241-GR T4 T3 , 2SC2669 27 k 0.1 µF 10 µF 0.0047 µF 1.5 k 56 k * 0.01 µF 1 k DET.OUT 22 k 150 k 2SC2669 12 k 0.1 µF 0.1 µF 0.1 µF 0.1 µF T2 0.1 µF 1SV102 56 k C1~30 pF 56 k 1.5 k T1 1SV102 1.8 k20 pF 0.1 µF ANT 2SC2669 2SC2669 12 k 0.1 µF


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PDF 1SV160 2SC1959 2SC1815 2SC2669 1SV102 3SK73 3SK73Y 3SK101 3SK73 gr SC1815 2SK241GR 3SK73-Y 3SK101-Y 2SK241-GR 2SC2669
2003 - 2SC2669

Abstract: 2SC2669-O 2SC2669-R 2SC2669-Y
Text: 2SC2669 Figure 1 Gpe Test Circuit Y Parameters (typ.) (1) (common emitter f = 455 kHz, Ta = 25°C) Characteristics Symbol 2SC2669-R 2SC2669-O 2SC2669-Y Unit VCE 6 6 6 , 6.2 mS qre -90 -90 -90 ° Symbol 2SC2669-R 2SC2669-O 2SC2669-Y Unit , 2SC2669 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2669 High , admittance 2 2003-03-27 2SC2669 3 2003-03-27 2SC2669 4 2003-03-27 2SC2669 5


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PDF 2SC2669 2SC2669 2SC2669-O 2SC2669-R 2SC2669-Y
2SC2669

Abstract: wf-5 transistor
Text: ^oe lyfel ^fe |yrel ^re SYMBOL Vc e rE gie ^ie Soe O o (C lyfel ^fe lyrel ^re 2SC2669-R 6 -1 0.58 53 1.9 2.6 38 -0.79 5.7 -9 0 2SC2669-R 6 -1 1.04 49 10 2.7 37 -9 .6 120 -9 0 2SC2669-0 6 -1 0.41 46 2.7 2.8 38 -0.83 5.7 -9 0 2SC2669-0 6 -1 0.85 43 15 2.9 37 -10.4 120 -9 0 2SC2669-Y 6 -1 0.26 38 4.8 3.6 38 -0.92 6.2 -9 0 2SC2669-Y 6 -1 0.65 36 28 3.6 37 -11.5 140 -9 0 UNIT V mA mS pF ¿íS , TO SHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE (PCT PROCESS) 2SC2669 HIGH


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PDF 2SC2669 55MAX. 2SC2669 wf-5 transistor
2SC2669

Abstract: cq 455 2SC2669-0 2SC2669-R 2SC2669-Y BDH100
Text: = 25°C) CHARACTERISTIC SYMBOL 2SC2669-R 2SC2669-0 2SC2669-Y UNIT Collector-Emitter Voltage VCE 6 , -90 o (2) (COMMON EMITTER f = 10.7 MHz, Ta = 25°C) CHARACTERISTIC SYMBOL 2SC2669-R 2SC2669-0 2SC2669-Y UNIT Collector-Emitter Voltage VCE 6 6 6 V Emitter Current IE -1 -1 -1 mA Input Conductance , TOSHIBA 2SC2669 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE (PCT PROCESS) 2 S C 2 6 , . 2001-01-16 1/6 TOSHIBA 2SC2669 INPUT Rcr = 50 fi 0.05 juF ©-il— G M (M 12 dF a 1/ ©/■co Â


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PDF 2SC2669 55MAX. 2SC2669 cq 455 2SC2669-0 2SC2669-R 2SC2669-Y BDH100
2SC1815 2SA1015

Abstract: 2SK117 2sk389 2SC2240 2sj74 2SC4667 2sk246 2sc2458 2SC1815 2SC1923
Text: Transistors T ransistors & D iodes fo r A udio Application A M /FM Tuner Frequency Package . TO-92 (SC-43) 2SC1923 RF FM Mini 2SC2668 Super Mini (SC-59) 2SC2714 USM (SC-70) 2SC4215 SSM 2SC4915 SMQ (SC-61) 3SK126 3SK160 2SK161 2SK192A 2SK241 MIX LO IF AFC RF AM 2SC941TM 2SK709 CONV & IF 2SC1815 2SC380TM 2SC941TM 2SC2670 2SK710 2SC2458 2SC2669 2SC2670 2SC2995 1SV102* AM Tuning 1SV149* 2SC1923 2SC1923 2SC380TM 2SC2668 2SC2668 2SC2669 2SK211 2SK210 2SK302 2SC2714 2SC2714 2SC2715 1SV160* 2SC2716 2SK711


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PDF SC-43) 2SC1923 2SC2668 SC-59) 2SC2714 SC-70) 2SC4215 2SC4915 SC-61) 3SK126 2SC1815 2SA1015 2SK117 2sk389 2SC2240 2sj74 2SC4667 2sk246 2sc2458 2SC1815
3120 tuner

Abstract: C5086 1SS241 C1923 2sc low noise 1SV204 1SV226 1SS242 2SA1161 1SS239
Text: Gate J-FET Bipolar 2S C 1923 2SC1923 2SC2668 2SK192A 2SC 2668 2SC2995 2SC2669 2SC2995 2SK710 2SC 2670 2SC2669 2SC 2670 2SC2458 2SC2669 2SC2458 2SC2714 2SK210 2SC2714 2SC 2996 2SC2715 2SC2996 2SK711 2SC2716


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PDF 3SK240 3SK283 3SK127 3SK146 3SK199 3SK207 3SK232 2SC3828 2SC4214 3SK284 3120 tuner C5086 1SS241 C1923 2sc low noise 1SV204 1SV226 1SS242 2SA1161 1SS239
2sc 1203

Abstract: 2Sc1923 equivalent 2SK241 equivalent 2sa 1300 equivalent 2SC 1902 2sc2240 equivalent 2sc1815 equivalent 2SC1815O 2SC1815 NPN SOT-23 2SC 1207
Text: 2SC380TM 2SC2669 2SC2995 2SK710 Single Gate J-FET 2SK.709 Bipolar 2SK1875 2SC941TM 2SC2670 2SC380TM 2SC2669 2SC941TM 2SC2670 2SC1815 2SC2458 2SC380TM 2SC2669 2SC1815 2SC2458 AM CONV Bipola


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PDF 1815L 2SC2240 2SC1627 2SC752G SC-70) SC-59) 2SC2713 2SC4210 2SA1621 2SC4209 2sc 1203 2Sc1923 equivalent 2SK241 equivalent 2sa 1300 equivalent 2SC 1902 2sc2240 equivalent 2sc1815 equivalent 2SC1815O 2SC1815 NPN SOT-23 2SC 1207
k 2761

Abstract: k 2749 2SC3311 nec 2761 2SC2724 a 2761 2SC3119 2SC3077 Pa75ha 2SC2847
Text: 2SC2058S 2SC4640 2SC2839 2SC2458 2SC2668 2SC2669 2SC1685 2SC1047 2SC1359 / a m S' a s


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PDF 2SC2745 2SC2746 2SC2749 2SC2284A--KA/MA 2SC3277 2SC3090 2SD1238 2SC4424 2SC4460 2SC3365 k 2761 k 2749 2SC3311 nec 2761 2SC2724 a 2761 2SC3119 2SC3077 Pa75ha 2SC2847
2SA1138

Abstract: 2SC2673 2sc2681 2SC2644 2SC2676 2SA1020 200W vhf 2sC2694 2SC2639 2SC2638
Text: RF/M1X/IF 40 30 0.02 0.1 0.5 40 40 200 6 0.001 2SC2669 «s kf A 35 30 0.05 0.2 0.1 35 40 240 , 2SC2669 80 10 0.002 3 NF max 3. 5dB f=lMHz ßg=50 (2-4E1A) ECB 2SC2670 3500 8 0. 04 1.5 NF 3


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PDF 2SC2636 2SC2637 2SC2638 2SC2639 2SC2640 2SC2641 400MHz 2SC2642 2SC2643 2SA1138 2SC2673 2sc2681 2SC2644 2SC2676 2SA1020 200W vhf 2sC2694 2SC2639
NEC 2706

Abstract: 2SC1971 nec 2741 2SC2283 2SD810 2SC3359 KA 2717 2SC1815 2SC3012 2SC2645
Text: 2SC1382 2SC3244 2SC2061 2SC 2724 H * 2SC2669 2SC2787 2SC3314 2SC2058S 2SC 2725 H * 2SC3067


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PDF 2SD1047 2SC3182N 2SC3012 2SD1935 2SD810 2SD919 2SC1741S 2SC2281 2SC1971 2SC4639 NEC 2706 2SC1971 nec 2741 2SC2283 2SD810 2SC3359 KA 2717 2SC1815 2SC3012 2SC2645
2SC3378

Abstract: 2SK118 2SC245S 2SC3267 2SC2710 2SC2469 2SC2458 2SA1150 2SK366 2SA1048
Text: S 1 5.0 6 1 100M _ 2SC2669 j 30 50 200 40-240 12 2 0.4 10 1 (100) 10 1 - - - - - 2SC2670 30 100


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PDF 2SC2458 2SA1048 2SC245S 2sk367 2sk370 2sk371 2sk372 2sj105 2sj107 2SC3378 2SK118 2SC3267 2SC2710 2SC2469 2SC2458 2SA1150 2SK366
k192a

Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 C2995 K241
Text: 2SC2348 2SC2349 2SC2458 2SC2498 2SC2499 2SC2644 2SC2668 2SC2669 2SC2670 2SC2712 2SC2714 2SC2715 2SC2716


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PDF 1SS154 1SS239 1SS241 1SS242 1SS268 1SS269 1SS271 1SS295 1SS312 1SS313 k192a c2458 C2498 C2668 C2717 C1923 Y C2499 k710 C2995 K241
2SC2669

Abstract: 2SC2670
Text: €¢ 2SC2669 3KS ffijÉ : SJi'WilBffl (AM MIX/IF igti, FM OSC/IF itti) #fi ; aUttmo Vceo(V) 30 Icbo(ÌA) 0.10


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PDF 200MHz Vcb-35V, 30MHz 200MHz, 500MHz, 100dB 800MHz 2SC2669 2SC2670
2sc2240 equivalent

Abstract: 2sc1815 equivalent 2sc3112 equivalent 2sa1015 equivalent 2sc2120 equivalent 2sc2458 equivalent 2Sc1959 equivalent 2SC1627 equivalent 2sc2878 equivalent 2SA1091 equivalent
Text: 2SC3136T 2SC2349 2SC388TM Remarks (TO-92 Mini-transistor) 2SA1048 2SC2458 2SA1049 2SC2459 2SC2668 2SC2669


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PDF OT-23MOD. 2SC2712 2SA1162 2SC2713 2SA1163 2SC2859 2SA1182 2SC3138 2SA1255 2SC3265 2sc2240 equivalent 2sc1815 equivalent 2sc3112 equivalent 2sa1015 equivalent 2sc2120 equivalent 2sc2458 equivalent 2Sc1959 equivalent 2SC1627 equivalent 2sc2878 equivalent 2SA1091 equivalent
2SC2669

Abstract: 2SC2670 2SC27 2SC2715 2SC2717 f-30MHz 2SC271
Text: €¢ 2SC2669 3KS ffijÉ : SJi'WilBffl (AM MIX/IF igti, FM OSC/IF itti) #fi ; aUttmo Vceo(V) 30 Icbo(ÌA) 0.10


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PDF 200MHz VCE-12V, 30MKz 2SC2717 30MHz 45MHz 2SC2669 2SC2670 2SC27 2SC2715 f-30MHz 2SC271
2005 - FET K161

Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Text: 2SC5066FT M1/M2 (O/Y) 372 2SC2668 C2668 210 2SC5084 MC (O, Y) 374 2SC2669 , 2SC2714 2SC2995 2SC2996 2SC2669 2SC2715 2SC2995 2SC1923 2SC2714 2SK192A Single , 2SC2716 2SC380TM RF 2SC2669 2SC2715 2SC941TM 2SC2670 2SC2716 AM CONV Bipolar , 2SK1771 Cascode J-FET FM 3SK258 3SK292 Single Gate MOS 3SK257 2SC2669 2SC2715 , ~240 12 2 (100) 10 1 (2.0) TO-92 2SC2669 30 50 200 40~240 12


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PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 FET K161 Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
2010 - bfw34 diode

Abstract: 2SC562 BSX70 LOW-POWER SILICON NPN BFR36 NA31 L/bfw34 diode 2SC941 bfw34
Text: LOW-POWER SILICON NPN Item Number Part Number Manufacturer V(BR)CEO (V) hFE Ic Max (A) fT (Hz) Cobo Max (F) ICBO Max (A) V(BR)CBO (V) PD Max (W) Derate at (WrC) TOper Max eC) Package Style V(BR)CEO 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386 BFY67 BFY67 SL101 2N1837 2N1837A 2N1837B 2N1837B 2N3641 2N4436 TP3641 2N4969 BSY53 2221


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PDF 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2N479 2N479A bfw34 diode LOW-POWER SILICON NPN BFR36 NA31 L/bfw34 diode 2SC941 bfw34
2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 02CZ27 transistor 737 2n4401 331
Text: 2SC2532 * 2SC2551 * 2SC2644 * 2SC2668 * 2SC2669 * 2SC2670 * 2SC2710 2SC2712 2SC2713 2SC2714 2SC2715


OCR Scan
PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 02CZ27 transistor 737 2n4401 331
2SJ74

Abstract: 2SC3136 2SK118 2SK241 2SC1815 2SA1015 2SA1349 2SA1015 2sc2240 equivalent 2SC1815 2SJ109
Text: 550 6 1 5.0 6 2SC2669 30 50 200 40~ 240 12 2 0.4 10 1


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PDF SC-43) 2SC1815 2SA1015 2SC732TM 2SC1815 2SC2240 2SA970 2SC3381 2SA1349 2SJ74 2SC3136 2SK118 2SK241 2SC1815 2SA1015 2SA1349 2SA1015 2sc2240 equivalent 2SJ109
2010 - 2N2537 texas

Abstract: 2N2458 2N2551 2N2457 2N2425 2n2398 SGS-ATES c426 2N2429 2N2431 BF253
Text: LOW-POWER SILICON NPN Item Number Part Number Manufacturer V(BR)CEO (V) hFE Ic Max (A) fT (Hz) Cobo Max (F) ICBO Max (A) V(BR)CBO (V) PD Max (W) Derate at (WrC) TOper Max eC) Package Style V(BR)CEO 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386 BFY67 BFY67 SL101 2N1837 2N1837A 2N1837B 2N1837B 2N3641 2N4436 TP3641 2N4969 BSY53 2221


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PDF 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2N479 2N479A 2N2537 texas 2N2458 2N2551 2N2457 2N2425 2n2398 SGS-ATES c426 2N2429 2N2431 BF253
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