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2SC2351-T1B NEC Electronics Group Bristol Electronics 1,755 $0.82 $0.21

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2SC2351 datasheet (9)

Part Manufacturer Description Type PDF
2SC2351 NEC HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD Original PDF
2SC2351 NEC Semiconductor Selection Guide 1995 Original PDF
2SC2351 NEC Semiconductor Selection Guide Original PDF
2SC2351 Others Japanese Transistor Cross References (2S) Scan PDF
2SC2351 Others Semiconductor Master Cross Reference Guide Scan PDF
2SC2351 Others The Transistor Manual (Japanese) 1993 Scan PDF
2SC2351 Others High Frequency Device Data Book (Japanese) Scan PDF
2SC2351 Others Transistor Substitution Data Book 1993 Scan PDF
2SC2351 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF

2SC2351 Datasheets Context Search

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Not Available

Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • NF 1.5 dB TYP. f= 1.0 GHz * MAG 14 dB , Specification © NEC Corporation 1984 2SC2351 TYPICAL CHARACTERISTICS (T a = 25 C) DC CURRENT GAIN vs , Voltage-V 2 20 30 0.5 1 2 5 10 20 Ic-Collector Current-mA 50 70 2SC2351 CD "O c tf CO "D < D Z J 0 CD < 0 Ic-Collector Current-mA 3 2SC2351


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PDF 2SC2351
2SC2351

Abstract: RF TRANSISTOR 10GHZ low noise 10GHz mixer RF TRANSISTOR 10GHZ marking r2 10GHz RF mixer UHF transistor GHz rf ghz transistor marking r3 RF POWER TRANSISTOR NPN 3 w RF POWER TRANSISTOR NPN
Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2351 DESCRIPTION ·Low Noise NF = 1.5 dB TYP. ; @ f = 1 GHz ·High Maximum Available Gain MAG = 14 dB TYP. ; @ f = 1 GHz APPLICATIONS ·Designed for use as UHF oscillators and a UHF mixer in a tuner of a TV , isc Silicon NPN RF Transistor 2SC2351 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise , RF Transistor isc Websitewww.iscsemi.cn isc RF Product Specification 2SC2351 INCHANGE


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PDF 2SC2351 S21e2 2SC2351 RF TRANSISTOR 10GHZ low noise 10GHz mixer RF TRANSISTOR 10GHZ marking r2 10GHz RF mixer UHF transistor GHz rf ghz transistor marking r3 RF POWER TRANSISTOR NPN 3 w RF POWER TRANSISTOR NPN
2SC2351

Abstract: No abstract text available
Text: 2SC2351 High Frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor PACKAGE DIMENSIONS in m illim eters (inches) 2.5 *8 ! {0 098) · Low Noise Figure: NF=1.5 dB TYP. (f= 1.0 GHz) · High Maximum Available Gain: MAG=14dB TYP. (f- 1.0 GHz) 0 5 l 8f| (0 02 ) 1.5 0 5 ABSOLUTE M A , hFE Classification M AR K h FE R2 4 0 -1 2 0 R3 1 0 0 -2 0 0 109 2SC2351 TY PIC AL , < -Collector Current -»nA 110 2SC2351 N r -Nttse Figu»! li -Coflector Coment -m A 5 111


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PDF 2SC2351 2SC2351
2SC2499

Abstract: 2SC3531 2SC3098 3771 3771 nec 2SC4811K 2SC3761 2sc3355 hitachi 2sc3841 2SC3124
Text: 2SC3098 2SC3099 2SC3429 2SC3545 2SC2759 2SC3841 2SC3841 2SC2351 2SC2351 2SC2408 2SC3544 2SC257QA 2SC3355


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PDF 2SC3751 2SC3531 2SC3978 2SC3979 2SD1441 2SD1848 2SD1730 2SD1730 2SC3559 2SC4123 2SC2499 2SC3531 2SC3098 3771 3771 nec 2SC4811K 2SC3761 2sc3355 hitachi 2sc3841 2SC3124
Not Available

Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES · · NF MAG 1.5 dB 14 dB TYP. TYP. @ f = 1.0 GHz @ f = 1.0 GHz PACKAGE DIMENSIONS (U nits: m m) 2 .8 ± 0.2 1.5 "3- Ò ABSOLUTE MAXIMUM RATINGS (T a = 25 °C , CURRENT Vc E = 1 0 V COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 2SC2351 Iife-DC Current Gain , 2 NEC 2SC2351 Ic-Collector Current-mA 3


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PDF 2SC2351
1997 - 2SC2351

Abstract: marking R2
Text: DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES · NF 1.5 dB TYP. @ f = 1.0 GHz · MAG 14 dB , Published March 1997 N Printed in Japan * Old Specification / New Specification © 1984 2SC2351 , 10 20 IC-Collector Current-mA 50 70 2SC2351 NF, Ga vs. COLLECTOR CURRENT NF-Noise , 1 3 5 7 10 30 0 IC-Collector Current-mA 3 2SC2351 No part of this


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PDF 2SC2351 2SC2351 marking R2
2SC2495

Abstract: 2SD889 2SC1565 2SC2915 2SD1010 nec 3114 3098 3079 2SC3356 2sc3113
Text: 2SC2820 2SC 3098 S X S ZSC3773 2SC2351 2SC2734 2SC2845 2SC3838K 2SC 3099 X S 2SC3771 2SC2351


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PDF ZSC2999 2SC2377 2SC2636 2SC2512 2SC1215 2SC2480 2SC2841 2SC3083 2SC2739 2SC4110 2SC2495 2SD889 2SC1565 2SC2915 2SD1010 nec 3114 3098 3079 2SC3356 2sc3113
Not Available

Abstract: No abstract text available
Text: SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in millimeters M AG 14 dB TV P. · f = 1.0 GHz · NF 1.5 dB TY P. ' f = 1 .0 G H z ABSOLUTE M AXIM UM RATINGS { T ,« 2 5 ° C ) C o lle c to r to Base Voltage , 4 0 t o 1 20 200 I 235 2SC2351 TYPICAL CHARACTERISTICS (Ta - 25°C I D C C U R R E N T , 2SC2351 N F , Gb v «. C O L L E C T O R C U R R E N T 237


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PDF 2SC2351
PR240

Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES · * NF M AG 1.5 dB 14 dB TYP. TYP. f = 1.0 G H z f = 1.0 G H z , GAIN vs. COLLECTORCURRENT Vc E = 10 V 100 2SC2351 200 COLLECTOR CURRENT vs. BASE TO EMITTER , VcB-Collector to Base Voltage-V Ic-Collector Current-mA 2 NEC 2SC2351 Ic-Collector Current-mA 3 NEC 2SC2351 No pa rt of th is d o cu m e n t may be cop ie d o r rep ro d u ce d in any


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PDF 2SC2351 PR240
2SC2407A

Abstract: 2SC2348 2SC2366 2-10H1A 2SC2407 2SC2381 2SC2395 2SC2388 2sc2373 2SC2351
Text: - 122 - m 2SC2348 2SC2349 2SC2351 2SC2352 2SC2353 2SC2356 2SC2359 2SC2360 (H) 2SC2362 2SC2362K 2SC2366 2SC2367 2SC2368 2SC2369 2SC2371 2SC2373 2SC2377 2SC2379 2SC2380 2SC2381 2SC2383 2SC2388 2SC2389 2SC2390 2SC2391 2SC2395 2SC2396 2SC2404 2SC2405 2SC2406 2SC2407 2 S C 2 4 0 7 (1) 2SC2407A 2SC2408 2SC2408(A) 2SC2410 % ft £ iÉ 11 (V) M X Ë fà VcEO (V) 30 30 25 30 30 500 45 0 30 120 , * ft TO- 92ff$ TO-920 (SC-59) n m. 2SC2348 2SC2349 2SC2351 2SC2352 2SC2353 2SC2356 2SC2359


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PDF 2SC2348 2SC2349 2SC2351 2SC2352 2SC2353 2SC2356 2SC2359 2SC2360 2SC2362 2SC2362K 2SC2407A 2SC2366 2-10H1A 2SC2407 2SC2381 2SC2395 2SC2388 2sc2373
Not Available

Abstract: No abstract text available
Text: 2SC2351 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V(BR)CEO (V)12è V(BR)CBO (V)25 I(C) Max. (A)70m Absolute Max. Power Diss. (W)150m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition)15 h(FE) Max. Current gain.200 @I(C) (A) (Test Condition)20m @V(CE) (V) (Test Condition)10 f(T) Min. (Hz) Transition Freq4.5G @I(C) (A) (Test Condition)20m @V(CE) (V) (Test Condition)10 Power Gain Min. (dB)14Â @I(C


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PDF 2SC2351
2SC2553

Abstract: 2SC1845 2SC2829 2SC3536 2SC3531 2SC2837 2sc3040 2SC2389 2sc2362 2SC3358
Text: 2SC4910 2SC2586 2SC1841 9sn»4i 2SC1845 2SC1845 2SC3122 2SC2999 2SC3040 2SC2555 2SC2369 2SC2351 2SC2758


OCR Scan
PDF 2SC2828 2SC2829 2SC2830 2SC2831 2SC3277 2SC2139 2SC2751 2SC3365 2SC2820 2SC2553 2SC1845 2SC3536 2SC3531 2SC2837 2sc3040 2SC2389 2sc2362 2SC3358
Toshiba 355-1

Abstract: 2SC3555 3563 2SC351 2SC4158 2SC3531 NEC 3552 2sc3211 2SC3170 2SC3556
Text: 2SC2351 2SC3707 2SC 3548 S 2 2SC3547A 2SC3126 2SC3477 2SC 3549 / 2SC3150 2SC3148 2SC3531


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PDF 2SC4427 2SC3657 2SC3322 2SC3506 2SC4428 2SD1431 2SC3507 2SC4429 2SD1433 2SC3258 Toshiba 355-1 2SC3555 3563 2SC351 2SC4158 2SC3531 NEC 3552 2sc3211 2SC3170 2SC3556
2SC3545

Abstract: 2sc2694 2SC3531 2SC3360 2SC2914 2SC1730 2SC2845 3136 3127 2Sc4270
Text: 2SC24Û4 2SC4771K 2SC 3126 B ÍL 2SC3302 2SC 3127/ B ÍL 2SC3774 2SC3429 2SC2351 2SC2845 2SC


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PDF 2SC3770 2SC3828 2SC2758 2SC4229 2SC2847 2SC3771 2SC3545 2SC2736 2SC2845 2SC4269 2sc2694 2SC3531 2SC3360 2SC2914 2SC1730 2SC2845 3136 3127 2Sc4270
3892A

Abstract: 2SC3435 2SC3885 2SC3584 2SD1849 EN1402 2sc3886 2SC3884 mitsubishi 2sc DTC143TS
Text: 3924 0 ÌL 2SC3559 2SC2979 2SC3979 2SC 3926 ® S 2SC3774 2SC3547B 2SC2351 2SC2734 2SC3707


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PDF 2SC4123 2SC4742 2SD1849 2SC4124 2SC3884 2SD1739 2SC3885 2SD1850 RT1N140C 3892A 2SC3435 2SC3885 2SC3584 2SD1849 EN1402 2sc3886 2SC3884 mitsubishi 2sc DTC143TS
k 3878

Abstract: t 3866 2SC3759 2SD1847 2sc4291 2SC4423 2sc3866 2SC3435 2sc3883 2SC3729
Text: - 175 - m s Type No. ít « Manuf. = * SANYO TOSHIBA B m NEC B ÎL HITACHI « ± a FUJITSU te t MATSUSHITA = K MITSUBISHI □ - A ROHM 2SC 3860 ^ = » EN1211 UN42Ì5 RTÌN140S DTC114TS 2SC 3861 te T 2SC2548 2SC2750A 2SC 3862 2SC3841 2SC3867 2SC3130 2SC 3863 = m RN1405 RT1N234C DTC123YK 2SC 3864 = £ RN1205 RT1N234S DTC123YS 2SC 3865 ^ 2SC4161 2SC3310 2SC3570 2SC2816 2SC4026 2SC4129 2SC 3866 y 2SC3150 2SC3559 2SC2979 2SC3379 2SC 3867 s il 2SC3774 2SC3862 2SC2351 2SC3707


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PDF EN1211 N140S DTC114TS 2SC2548 2SC2750A 2SC3841 2SC3867 2SC3130 RN1405 RT1N234C k 3878 t 3866 2SC3759 2SD1847 2sc4291 2SC4423 2sc3866 2SC3435 2sc3883 2SC3729
VCE-12V

Abstract: 2SC2351 2SC3314
Text: SA 1 4 2 4 B® ffljÉ : v-f 1 njfcifHffl ¡tts : &m®tzmmLimw 7*'J 7 K IC KLT» NPN tlSii 2SC2351.


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PDF 2SC3314 200MHz 00jfcifHffl 2SC2351. -15mA 1S21S12dB -15mA, -10mA 10jiA. VCE-12V 2SC2351
2SD636

Abstract: SN1402 DTC114ES RT1N141C DTC124ES UN4211 DTC114EK RT1N441S 2SC2494-MA 2SC3330
Text: 2SC3254 2SD553 2SD1442A 2SC 3428 2SC3255 2SC3345 2SD1443A 2SC 3429 y * S 2SC2351 2SC3513


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PDF SN1402 UN2211 RT1N141C DTC114EK RN1204 UN4213 RT1N441S DTC144ES RN1203 UN4212 2SD636 SN1402 DTC114ES DTC124ES UN4211 DTC114EK 2SC2494-MA 2SC3330
2SC3763

Abstract: 2SD1267A 3844 3841 2SC3536 2SC3855 RT1N140C 2SC3691 3845 3843
Text: 2SC3130 2SC 3838 "" □ -A 2SC3773 2SC3120 2SC2351 2SC2734 2SC3707 2SC 3839 / □ —A 2SC3771


OCR Scan
PDF 2SC4085 2SC4415 2SC3356 2SC3513 2SC3087 2SC2335 2SC3870 2SC3090 2SC3536 2SC3872 2SC3763 2SD1267A 3844 3841 2SC3536 2SC3855 RT1N140C 2SC3691 3845 3843
2012 - 2SK2396

Abstract: PC2763 pc1658 2SC3357 2SC3545 ne27283 UPC1663 2sc2757 2sc5008 2SC2570A
Text: (V) 2SC1927(NE73440B) 2SC2148(NE73435) 2SC2149(NE02135) 2SC2351 (NE02133) 2SC2954 2SC3355(NE85632 , 2SC2570A 3 4 3 4 2SC3356 2SC4093 2SC4228 2SC5013 2SC2351 2SC4092 2SC4185 2SC2351 2SC4092 2SC3356 2SC4093 2SC4226 2SC5011 2SC2351 2SC4092 2SC3545 2SC4184 2SC4185 2SC4568 2SC4570 2SC4569 2SC4571 2SC4185 3 , ) (2.0×1.25, t = 0.6) 2SC2351 2SC4225 2SC4092 2SC5004 2SC5431 2SC4536 2SC5337 2SC4568 2SC4570 2SC4703 , NE68439E NE68539E NE68430 NE68530 NE58219 NE58119 ELAJ No. 2SC1733 2SC1926 2SC1927 2SC2148 2SC2149 2SC2351


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PDF X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 2SC3357 2SC3545 ne27283 UPC1663 2sc2757 2sc5008 2SC2570A
1998 - nf025

Abstract: NE27283 upc27 NE42484 x-band power transistor 100W P147D 2SK2396 nf025db uPG508 c-band lna chip
Text: 1000 2000 2000 2000 Part Number 2SC1927 2SC2148 2SC2149 2SC2351 2SC2954 2SC3355 2SC3356 2SC3357 , . 2SC3355 2SC3356 2SC2570A 2SC2351 2SC2570A 2SC2351 2SC3355 2SC3356 2SC2570A 2SC2351 2SC3545 2SC4568 2SC4569 , 2SC3663 2SC4186 2SC4187 2SC4225 2SC4091 2SC4092 4.5 5.0 2SC2149 2SC2570A 2SC2351 2SC4569 5.3 , 2SC1926 2SC1927 2SC2148 2SC2149 2SC2351 2SC2586 2SC2762 2SC3218-M 2SC3286-M 2SC3355 2SC3356 2SC3357


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PDF X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 NE42484 x-band power transistor 100W P147D 2SK2396 nf025db uPG508 c-band lna chip
2-7D101A

Abstract: 2SA1410 2SA1441 HV COB 2SA1407 2SA1408 2SA1412 2SA1412-Z 2SA1413 2SA1413-Z
Text: NF max 4dB f=lGHz 2SC2351 (SC-59) EBC 2SA1424 120* -5 -0.1 40 2SC3665 (2-7D101A) BCE 2SA1425


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PDF 2SA1407 2SA1408 2SA1409 2SA1410 2SC3668 2-7D101A) 2SA1428 2SC3669 2SA1429 2-7D101A 2SA1441 HV COB 2SA1408 2SA1412 2SA1412-Z 2SA1413 2SA1413-Z
NE02136

Abstract: 2SC2570 NE02135 equivalent NE02103 2sc2570 transistor 2SC1560 k427 NE02137 GHZ micro-X Package 2sc2351 equivalent
Text: NE02132 2SC2570 32 NE02133 2SC2351 33 NE02135 2SC2149 35 NE02137 2SC2369 37 SYMBOLS PARAMETERS , NE02133 2SC2351 33 NE02135 2SC2149 35 NE02137 2SC2369 37 SYMBOLS PARAMETERS AND CONDITIONS UNITS


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PDF b427414 000137S NE021 3l-17 NE02136 2SC2570 NE02135 equivalent NE02103 2sc2570 transistor 2SC1560 k427 NE02137 GHZ micro-X Package 2sc2351 equivalent
transistor 5bw

Abstract: TRANSISTOR 5DW 5dw transistor 3bw transistor 2SC1009 transistor 3bw TRANSISTOR 1dw nec microwave nec m NPN2SC2351
Text: Epitaxial NPN 2SC2351 N E C MINI M O LO Regular Microwave Low Noise 14 250 150 U1 9 0 -1 8 0 4 0 -1 8 0 4 0


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PDF 2SK67 2SK160 transistor 5bw TRANSISTOR 5DW 5dw transistor 3bw transistor 2SC1009 transistor 3bw TRANSISTOR 1dw nec microwave nec m NPN2SC2351
2SC2570

Abstract: 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 NE02132 ic 2SC2570 NE02100 NE02135
Text: 2SC2351 33 NE02135 2SC2149 35 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP , 12 NE02132 2SC2570 32 NE02133 2SC2351 33 NE02135 2SC2149 35 SYMBOLS PARAMETERS AND


OCR Scan
PDF bM27414 QDDB354 T3V-23 NE021 2SC2570 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 NE02132 ic 2SC2570 NE02100 NE02135
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