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LM2917MX/NOPB LM2917MX/NOPB ECAD Model Texas Instruments Frequency to Voltage Converter 14-SOIC -40 to 85
VFC320CM1 VFC320CM1 ECAD Model Texas Instruments Voltage-to-Frequency and Frequency-to-Voltage Converter 10-TO-100
LM2917MX-8 LM2917MX-8 ECAD Model Texas Instruments Frequency to Voltage Converter 8-SOIC -40 to 85
LM2907N/NOPB LM2907N/NOPB ECAD Model Texas Instruments Frequency to Voltage Converter 14-PDIP -40 to 85
LM2907M-8/NOPB LM2907M-8/NOPB ECAD Model Texas Instruments Frequency to Voltage Converter 8-SOIC -40 to 85
LM2907MX-8/NOPB LM2907MX-8/NOPB ECAD Model Texas Instruments Frequency to Voltage Converter 8-SOIC -40 to 85

2SC2216(F) Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
OK304

Abstract: 2sc2216
Text: T O S H IB A TOSHIBA TRANSISTOR 2SC2216 ,2SC2717 TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. 2SC2216 , 2SC2717 SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm 5.XMAX. High Gain : Gpe = 33dB (Typ.) ( f =45MHz) Good Linearity of hEE. 0.45 F RATING 50 30 45 25 4 50 -5 0 300 125 -5 5 -1 2 5 , 2SC2216 2SC2717 Colleetor-Emitter Voltage 2SC2216 2SC2717 Emitter-Base Voltage Collector Current Emitter , (Ta = 25°C) CHARACTERISTIC 2SC2216 Collector Cut-off Current 2SC2717 Emitter Cut-off Current


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PDF 2SC2216 2SC2717 2SC2216, 45MHz) 2SC2717 SC-43 OK304
2SC2216

Abstract: transistor u transistor 2717
Text: 2SC2216 /2717 T V F IN A L PICTURE IF A M P LIF IE R A P P LIC A T IO N S . SILICON NPN , 2SC2216 Collector Cut-off C urrent 2SC2717 Em itter Cut-off C urrent 2SC2216 Collector-Emitter Breakdown Voltage 2SC2717 2SC2216 DC C urrent Gain 2SC2717 Collector-Emitter Saturation Voltage Base-Em itter Saturation Voltage Collector O utput Capacitance Collector-Base Time Constant Transition Frequency 2SC2216 , , l]j = 0, f =30M H z 0.8 Cob = 10V, I e = -1m A , Cc-rbb' VCB - f =30M H z 300 V c e = 12.5V, Ic =


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PDF 2SC2216/2717 2SC2216 2SC2717 2SC2717 transistor u transistor 2717
DC 0509 C

Abstract: transistor 2sc2216 2SC2216
Text: TO SHIBA TOSHIBA TRANSISTOR 2SC2216 ,2SC2717 TV FINAL PICTURE IF AM PLIFIER APPLICATIONS. 2SC2216 , 2SC2717 SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm &1M AX. · High Gain : Gpe = 33dB (Typ.) ( f =45MHz) Good Linearity of hjrE. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC 2SC2216 2SC2717 Colleetor-Emitter Voltage 2SC2216 2SC2717 Emitter-Base Voltage Collector Current Emitter , 2SC2216 Collector Cut-off Current 2SC2717 Emitter Cut-off Current 2SC2216 Colleetor-Emitter Breakdown


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PDF 2SC2216 2SC2717 2SC2216, 45MHz) 2SC2717 DC 0509 C transistor 2sc2216
2sc2717

Abstract: 2sc2216
Text: TOSHIBA 2SC2216 ,2SC2717 IN PUT O.OOö^F - il- Rg -50 í"2 C fa io fa o / f :3 , TOSHIBA TOSHIBA TRANSISTOR 2SC2216 ,2SC2717 SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216f 2SC2717 TV FINAL PICTURE IF AM PLIFIER APPLICATIONS. Unit in mm High Gain : Gpe = 33dB (Typ.) ( f , Junction Temperature Storage Temperature Range 2SC2717 2SC2216 2SC2717 SYMBOL VCBO VCEO Ve b o IC , CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Collector Cut-off Current 2SC2216 2SC2717 SYMBOL T CBO TEST


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PDF 2SC2216 2SC2717 2SC2216f 45MHz) 2SC2717 SC-43
2216

Abstract: 2SC2216 2SC2717
Text: (Fig.) 2SC2216 Gpe Vcc = 12.5 V, IE = -12.5 mA, f = 45 MHz 29 — 36 dB 2SC2717 28 — 36 , TOSHIBA 2SC2216 ,2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216 , 2SC2717 TV FINAL PICTURE IF AMPLIFIER APPLICATIONS • High Gain : Gpe = 33dB (Typ.) ( f = 45 MHz) • Good , Collector-Base Voltage 2SC2216 vCBO 50 V 2SC2717 30 Collector-Emitter Voltage 2SC2216 vCEO 45 V 2SC2717 , 1/4 TOSHIBA 2SC2216 ,2SC2717 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST


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PDF 2SC2216 2SC2717 2SC2216, SC-43 2216 2SC2717
2003 - 2SC2216

Abstract: 2SC2717
Text: 2SC2216 ,2SC2717 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2216 ,2SC2717 TV Final Picture IF Amplifier Applications · High gain: Gpe = 33dB (typ.) ( f = 45 MHz) · Unit: mm Good linearity of hFE. Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage 2SC2216 2SC2717 Collector-emitter voltage Symbol VCBO 2SC2216 2SC2717 Emitter-base voltage , = 25°C) Characteristics Collector cut-off current 2SC2216 2SC2717 ICBO Test Condition


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PDF 2SC2216 2SC2717 2SC2216 SC-43 2SC2717
2SC2216

Abstract: 2SC2717
Text: Power Gain (Fig.) 2SC2216 Gpe Vec = 12.5V, IE = - 12.5mA, f =45MHz 29 — 36 dB 2SC2717 28 — 36 , TOSHIBA 2SC2216 ,2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216 , 2SC2717 TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. High Gain : Gpe = 33dB (Typ.) ( f =45MHz) • Good , Collector-Base Voltage 2SC2216 VCBO 50 V 2SC2717 30 Collector-Emitter Voltage 2SC2216 VCEO 45 V 2SC2717 , -55-125 °C 0.45 aiMAX. 0.45 F Oi X Ol ^ o ci 1.27 1.27 1. BASE 2. EMITTER 3. COLLECTOR JEDEC


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PDF 2SC2216 2SC2717 2SC2216, 45MHz) SC-43 2SC2717
2SC2216

Abstract: 2SC2717
Text: 2SC2216 ,2SC2717 INPUT 0.005^ F HI Rg = 50n STATIC CHARACTERISTICS OUTPUT RL = 50H vec COIL DATA 0.20mm Cu , TOSHIBA 2SC2216 ,2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216 , 2SC2717 TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. High Gain : Gpe = 33dB (Typ.) ( f =45MHz) • Good Linearity of , 2SC2216 2SC2717 2SC2216 2SC2717 Emitter-Base Voltage Collector Current Emitter Current SYMBOL VCBO VCEO , °C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current 2SC2216 !CBO Vcb = 50V, IE =


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PDF 2SC2216 2SC2717 2SC2216, 45MHz) SC-43
2SC2216

Abstract: 2sc221
Text: 2SC2216 0.05 A , 50 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS , dissipation NPN Silicon G H Base Emitter Collector J A D A B C D E F G H J K K , TYP. 1.10 2.42 2.66 0.36 0.76 REF. B C F Collector Base Emitter , ://www.SeCoSGmbH.com/ 17-Feb-2011 Rev. A VCE=12.5V, IC=12.5mA VCB=10V, IE=0, f =30MHz Any changes of specification will not be informed individually. Page 1 of 2 2SC2216 Elektronische Bauelemente 0.05 A


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PDF 2SC2216 17-Feb-2011 30MHz 2SC2216 2sc221
2SC2222

Abstract: 2SC2093 2SC2150 2sc2103a 2SC2094 2SC2098 2SC2106 2sc2188 2SC2190 2sc2221
Text: =45MHz TO-92® BEC 2SC2216 10 Po min 32dBm f =175MHz Rg=23dBm TO-39Jfi EBC 2SC2221 18 Po min , 30 20 0.03 0.25 0.1 10 40 320 6 0. 001 0.4 0. 01 0.001 2SC2216 ÄS TV IF 50 45 0.05 0. 3 0.1 50 , ) « a te »1 È £ ft 2.5 Pose typ 24.5dB f =5GHz (#87) BEO 2SC2093 Po ■in 15* f =175MHz 2SC2094 Po iiin 75W f =30MHz 2SC2097 100 5 0. 5 120 Po min 13» f , min 6W f =175MHz Pi =0.5» (2-10G1A) EBEC 2SC2101 80 Po min 15W f =175MHz Pi=l. 3W (2-10G1A


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PDF 2SC2093 2SC2094 2SC2097 2SC2098 27/50MHZ 2SC2099 30MHz 2SC2101 2SC2102 2SC2103A 2SC2222 2SC2150 2sc2103a 2SC2098 2SC2106 2sc2188 2SC2190 2sc2221
2004 - transistor F45

Abstract: No abstract text available
Text: FORWARD INTERNATIONAL ELECTRONICS LTD. 2SC2216 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR TV FINAL PICTURE IF AMPLIFIER APPLICATIONS Package: TO-92 * High Gain:Gpe=33dB(TYP.) ( f =45 MHz) * Good Linearity of HFE ABSOLUTE MAXIMUM RATINGS at Tamb=250C Characteristic Symbol , =15mA Ib=1.5mA V Ic=15mA Ib=1.5mA pF Vcb=10V f =30MHz Ic=1mA ps Vcb=10V Ie=-1mA f =30MHz MHz Vce=12.5V Ic=12.5mA d B Vce=12.5V Ic=12.5mA f =45MHz Unit V V V nA nA Forward International


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PDF 2SC2216 100uA 30MHz 30MHz 45MHz transistor F45
2SC2348

Abstract: No abstract text available
Text: 12.5 12.5 f (MHz,' 45 45 45 O -CO Application NPN PNP X (dB) 32-40 29-36 28-36 V H F AMP. T V 1st PIF VH F AMP. T V 2nd 3rd PIF VH F Amp TV 2nd 3rd PIF 2SC2215* 2SC2216 2SC2717 o ·D -3 O MAGC CLASSIFICATIO N UHF OSC. VH F MIX VH F R F . MIX V H F OSC VH F MIX 2SC2347 2SC2348 , 10 f ic (mA) (GHz) 10 10 10 30 20 20 0.5 0.5 0.5 0.5 1.0 1.0 Type No. Application VHF/UHF Low , 2.2 2.3 1.7 1.1 Ic (rjiA) 5 3 5 10 5 5 f (GHz] 0.5 0.5 0.5 0.5 O o n >£ IT m VHF/UHF


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PDF 2SC2215* 2SC2216 2SC2717 2SC2347 2SC2348 2SC2349 2SC3136 2SC2498 2SC2499 2SC2548
2sc2216

Abstract: No abstract text available
Text: = 15mA, IB=1.5 mA VCE=12.5 V, IC=12.5mA VCB=10V,IE=0, f =30MHz 2SC2216 (NPN) TO-92 Bipolar Transistors , 2SC2216 (NPN) TO-92 Bipolar Transistors 1. BASE 2. EMITTER 3. COLLECTOR TO-92 Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature Value 50 45 4 50 300


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PDF 2SC2216 30MHz
2SA1254

Abstract: 2SC2149 2SC2216
Text: Zrb(Q)* 50. 00 Ie=-1hA, f =2MHz • 2SC2216 ffiis : tv pif msmmm m : nwmm®mms¿ l\> Vceo(V) 45 , – XI- y y 7*5 -í ^©' f fr- V® «©««wa^© hjy^^o Vceo(V) 12 hFE 30.00 70. 00 200. 00 VcE=10V, Ic , (pF) 0.60 Vcb=10V, Ie=0. f=lMHz Pt(iiW) 290 IS2iel2* 5.00 6. 70 !c=20mA. f =2GHz Tj(°C) 200 NF(dB) 2.60 4. 00 Ic=5mA, f =2GHz MAG(dB) 11.00 Ic=20mA, f =2GHz • 2 SC 2 1 5 0 SS mm-.v-ft vì&mÈWs, m, sêjgffl, »sum WÄ : v-í^nXtPf.^-^ y ir ■7, 1- y y -fy ' f y -y- i^ffi


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PDF 2SC2149 200MHz 2SC2216 30MHz Ie--12. 45MHz 2SA1254
2006 - 2SC2216

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2216 TRANSISTOR (NPN) FEATURES Amplifier dissipation NPN Silicon TO-92 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base , Cob VCE=12.5 V, IC=12.5mA VCB=10V,IE=0, f =30MHz 300 MHz 2.0 pF Typical Characteristics 2SC2216 Jiangsu Changjiang Electronics Technology


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PDF 2SC2216 30MHz 2SC2216
2SC2216

Abstract: IB15
Text: 2SC2216 2SC2216 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation PCM: 300 mW (Tamb=25) Collector current 50 mA ICM: Collector-base voltage 50 V V(BR)CBO : Operating and storage junction temperature range 1. BASE 2. EMITTER 3. COLLECTOR TJ, Tstg: -55 to +150 1 2 3 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP , (sat) IC= 15mA, IB=1.5 mA 1.5 V fT VCE=12.5 V, IC=12.5mA f = 100 MHz Transition


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PDF 2SC2216 O--92 2SC2216 IB15
2004 - Not Available

Abstract: No abstract text available
Text: TO-92 Plastic-Encapsulate Transistors 2SC2216 TRANSISTOR (NPN) TO—92 FEATURES Power dissipation PCM: 300 mW (Tamb=25℃) Collector current 50 mA ICM: Collector-base voltage 50 V V(BR)CBO : Operating and storage junction temperature range 1. BASE 2. EMITTER 3. COLLECTOR TJ, Tstg: -55℃ to +150℃ 1 2 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol , ) IC= 15mA, IB=1.5 mA 1.5 V fT VCE=12.5 V, IC=12.5mA f = 100 MHz Transition frequency


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PDF 2SC2216
2002 - 2SC221

Abstract: 2sc2216
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features · · · · Capable of 300mWatts of Power Dissipation. Collector-current 50mA Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150 OC Pin Configuration Bottom View 2SC2216 NPN Silicon Plastic-Encapsulate Transistor TO-92 E B A C E Electrical , ) Transition Frequency (V CE=12.5Vdc, IC=12.5mAdc, f =100MHz) D G DIMENSIONS INCHES DIM A B C D


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PDF 300mWatts -55OC 2SC2216 100uAdc, 50Vdc, 15mAdc, 100MHz) 2SC221 2sc2216
2006 - Not Available

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2216 TRANSISTOR (NPN) TO-92 FEATURES Amplifier Dissipation NPN Silicon 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2. EMITTER Symbol Parameter Value Units VCBO Collector-Base Voltage 50 VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 4 , VCE=12.5 V, IC=12.5mA VCB=10V,IE=0, f =30MHz 300 MHz 2.0 pF A,May,2011 Jiangsu


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PDF 2SC2216 30MHz
2002 - 2SC2216

Abstract: No abstract text available
Text: 2SC2216 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features · · · · Capable of 300mWatts of Power Dissipation. Collector-current 50mA Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150 OC Pin Configuration Bottom View NPN Silicon Plastic-Encapsulate Transistor TO-92 E B A C E , =1.5mAdc) Transition Frequency (V CE=12.5Vdc, IC=12.5mAdc, f =100MHz) D G DIMENSIONS DIM A B


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PDF 2SC2216 300mWatts -55OC 100uAdc, 50Vdc, 15mAdc, 100MHz) 2SC2216
2002 - Not Available

Abstract: No abstract text available
Text: MCC Features · · · · omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC2216 Capable of 300mWatts of Power Dissipation. Collector-current 50mA Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150 OC NPN Silicon Plastic-Encapsulate Transistor TO-92 Pin Configuration Bottom View E B C A E Electrical Characteristics @ 25OC Unless , Voltage (I C=15mAdc, IB =1.5mAdc) Transition Frequency (V CE=12.5Vdc, IC=12.5mAdc, f =100MHz) Min 45 50 4.0


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PDF 2SC2216 300mWatts -55OC 10mAdc, 100uAdc, 50Vdc, 15mAdc, 100MHz)
2006 - Not Available

Abstract: No abstract text available
Text: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC2216 Features · · · · Capable of 300m Watts of Power Dissipation. Collector-current : ICM=50mA Collector-base Voltage:V(BR)CBO= 50V Operating and storage junction temperature range: -55OC to +150 OC x Case Material: Molded Plastic. Classification Rating 94V-0 UL Flammability , =1.5mAdc) Transition Frequency (V CE=12.5Vdc, IC=12.5mAdc, f =100MHz) Min 45 50 4.0 -Max -0.1 0.1


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PDF 2SC2216 -55OC 10mAdc, 100uAdc, 50Vdc,
2002 - Not Available

Abstract: No abstract text available
Text: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC2216 Features · · · · Capable of 300mWatts of Power Dissipation. Collector-current 50mA Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150 OC NPN Silicon Plastic-Encapsulate Transistor TO-92 Pin Configuration Bottom View E B C A E Electrical , ) Base-Emitter Saturation Voltage (I C=15mAdc, IB =1.5mAdc) Transition Frequency (V CE=12.5Vdc, IC=12.5mAdc, f


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PDF 2SC2216 300mWatts -55OC 10mAdc, 100uAdc, 50Vdc, 15mAdc, 100MHz)
2002 - Not Available

Abstract: No abstract text available
Text: MCC Features · · · · omponents 21201 Itasca Street Chatsworth !"# $ % !"# 2SC2216 Capable of 300mWatts of Power Dissipation. Collector-current 50mA Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150 OC NPN Silicon Plastic-Encapsulate Transistor TO-92 Pin Configuration Bottom View E B C A E Electrical Characteristics @ 25OC Unless , Voltage (I C=15mAdc, IB =1.5mAdc) Transition Frequency (V CE=12.5Vdc, IC=12.5mAdc, f =100MHz) Min 45 50 4.0


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PDF 2SC2216 300mWatts -55OC 10mAdc, 100uAdc, 50Vdc, 15mAdc,
2004 - 2SC2216

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2216 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation PCM: 300 mW (Tamb=25) Collector current 50 mA ICM: Collector-base voltage 50 V V(BR)CBO : Operating and storage junction temperature range 1. BASE 2. EMITTER 3. COLLECTOR TJ, Tstg: -55 to +150 1 2 3 ELECTRICAL , voltage VBE (sat) IC= 15mA, IB=1.5 mA 1.5 V fT VCE=12.5 V, IC=12.5mA f = 100 MHz


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PDF 2SC2216 O--92 2SC2216
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