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2SC2120-0 Toshiba America Electronic Components Bristol Electronics 1,800 - -
CDBD2SC21200-G Comchip Technology Corporation Ltd NAC 250 $1.60 $1.49
CDBD2SC21200-G Comchip Technology Corporation Ltd Chip1Stop 250 $2.17 $1.61

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2SC2120 datasheet (30)

Part Manufacturer Description Type PDF
2SC2120 Various Russian Datasheets Transistor Original PDF
2SC2120 Bharat Electronics Transistor Selection Guide Scan PDF
2SC2120 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
2SC2120 Micro Electronics Medium Power Amplifiers and Switches Scan PDF
2SC2120 Micro Electronics Semiconductor Device Data Book Scan PDF
2SC2120 Others The Transistor Manual (Japanese) 1993 Scan PDF
2SC2120 Others Transistor Substitution Data Book 1993 Scan PDF
2SC2120 Others Transistor Shortform Datasheet & Cross References Scan PDF
2SC2120 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SC2120 Others Basic Transistor and Cross Reference Specification Scan PDF
2SC2120 Others The Japanese Transistor Manual 1981 Scan PDF
2SC2120 Others Japanese Transistor Cross References (2S) Scan PDF
2SC2120 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SC2120 Others Cross Reference Datasheet Scan PDF
2SC2120 Others Shortform Transistor PDF Datasheet Scan PDF
2SC2120 Panasonic Medium Power Amplifiers and Switches Scan PDF
2SC2120 Semico Medium Power Transistors Scan PDF
2SC2120 Toshiba SILICON NPN EPITAXIAL TYPE(PCT PROCESS) Scan PDF
2SC2120 Toshiba TRANSISTOR (AUDIO POWER AMPLIFIER APPLICATIONS) Scan PDF
2SC2120 Toshiba NPN Transistor Scan PDF

2SC2120 Datasheets Context Search

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2SC2120

Abstract: 2sC2120 transistor Audio Power Amplifier TOSHIBA 2SC2120-O 2SC2120-Y 2sC2120 y transistor ic 824 J transistor 2sc2120 2SC2120 0 2SA950
Text: ICON NPN EPITAXIAL TRANSISTOR (PCT PROCESS), 2sc2120 o Audio Power Amplifier Applications W : hpE= 100~320 vomtumbtii-to 2SA950 ¿xyyjy^j'VKZbt-to 1W Output Applications Complementary to 2SA950 , to the value of hj>E(l) the 2SC2120 is classified as follows. * PCTSHilCJ; To Produced by Perfect Crystal Device Technology. 823 CLASSIFICATION MIN. MAX. 2SC2120 — 0 100 200 2SC2120 — Y 160 320 , 'tfi •x.iyfiNIKE. V0E (V) ifi - VBE 824 2sc2120 hps — Iq vCE(eat) ~ Ic 3 5 1 0 3 0 50 1 0 0 30 0 500 1000


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PDF 2sc2120 2SA950 Ta-251C 2SC2120 2sC2120 transistor Audio Power Amplifier TOSHIBA 2SC2120-O 2SC2120-Y 2sC2120 y transistor ic 824 J transistor 2sc2120 2SC2120 0 2SA950
2SC2120

Abstract: 2SA950
Text: 2SC2120 NPN (PCT) 2SC2120 : mm · : hFE (1) = 100~320 · B 1 W · 2SA950 (Ta = 25°C) VCBO 35 V VCEO 30 V VEBO 5 V IC 800 mA IB 160 mA PC , ) Cob O: 100~200, Y: 160~320 1 2007-11-01 2SC2120 IC ­ VCE hFE ­ IC 1000 1000 , 80 100 120 Ta 140 160 180 (°C) 2 2007-11-01 2SC2120 · ·


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PDF 2SC2120 2SA950 SC-43 2SC2120 2SA950
2SC2120

Abstract: 2sC2120 transistor
Text: SEMICONDUCTOR TOSHIBA TRANSISTOR. T O SH IB A 2SC2120 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) TECHNICAL DATA ( 2SC2120 ) AUDIO POWER AMPLIFIER APPLICATIONS Unit in mm . 5.1 M A , ay re su lt fro m its use. 2SC2120 - 1_ 1996-09-02_ TOSHIBA , . SEMICONDUCTOR T O SH IB A 2SC2120 TECHNICAL DATA ( 2SC2120 ) le - VCE hFE - IC VCE(sat) - IC ic - vbe BASE-EMITTER VOLTAGE VBE (V) 2SC2120 - 2* 1996-09-02 TOSHIBA CORPORATION


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PDF 2SC2120 2SC2120) 2SC2120 2sC2120 transistor
2SC2120

Abstract: 2SA950
Text: 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2120 Audio Power Amplifier Applications · High hFE: hFE (1) = 100~320 · 1 watts amplifier applications. · Unit: mm Complementary to 2SA950 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 V , 2003-03-24 2SC2120 2 2003-03-24 2SC2120 RESTRICTIONS ON PRODUCT USE 000707EAA ·


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PDF 2SC2120 2SA950 SC-43 2SC2120 2SA950
2SC2120

Abstract: 2SA950 2sC2120 y transistor transistor 2sc2120
Text: TO SH IBA TOSHIBA TRANSISTOR 2SC2120 AUDIO POWER AMPLIFIER APPLICATIONS 2SC2120 SILOCON NPN EPITAXIAL TYPE (PCT PROCESS) Unit in mm . 5.1 MAX. · High hEE : hEE (i) = 100~320 · 1 Watts Amplifier Applications. · Complementary to 2SA950 MAXIMUM RATINGS (Ta = 25°C) 0.45 0.55 MAX , 2001 05-31 - TO SH IBA 2SC2120 IC - VCE hFE - IC VCE(sat) - IC IC - VBE BASE-EMITTER VOLTAGE VBE (V) 2 2001 05-31 - TO SH IBA 2SC2120 RESTRICTIONS ON PRODUCT USE


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PDF 2SC2120 2SA950 SC-43 2SC2120 2SA950 2sC2120 y transistor transistor 2sc2120
2SC2120

Abstract: 2SC2120Y 2SC2120-Y 2SC2120-O 2sc212 2SC2120Y transistor 2SC2120O 2SC2120-0 2SA950 2sC2120 transistor
Text: 2SC2120 0.8 A , 35 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES High DC Current Gain Complementary to 2SA950 G H J CLASSIFICATION OF hFE Product-Rank 2SC2120-O 1Emitter 2Collector 3Base A D 2SC2120-Y Range 100~200 Millimeter Min. Max. 4.40 , of 2 2SC2120 Elektronische Bauelemente 0.8 A , 35 V NPN Plastic Encapsulated Transistor


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PDF 2SC2120 2SA950 2SC2120-O 2SC2120-Y 500mA, 28-Jan-2011 100mA 2SC2120 2SC2120Y 2SC2120-Y 2SC2120-O 2sc212 2SC2120Y transistor 2SC2120O 2SC2120-0 2SA950 2sC2120 transistor
2SC2120

Abstract: 2sc2120 equivalent 2sC2120 y transistor
Text: ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package , ST 2SC2120 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Current Gain , , Stock Code: 724) ® Dated : 07/12/2002 ST 2SC2120 Ta=25 SEMTECH ELECTRONICS LTD


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PDF 2SC2120 100mA 700mA 500mA, 2SC2120 2sc2120 equivalent 2sC2120 y transistor
2007 - 2SC2120

Abstract: 2SA950
Text: 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2120 Audio Power Amplifier Applications · High hFE: hFE (1) = 100~320 · 1 watts amplifier applications. · Unit: mm Complementary to 2SA950 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 , 2007-11-01 2SC2120 2 2007-11-01 2SC2120 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL


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PDF 2SC2120 2SA950 2SC2120 2SA950
2003 - 2SC2120

Abstract: 2SA950
Text: 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2120 Audio Power Amplifier Applications · High hFE: hFE (1) = 100~320 · 1 watts amplifier applications. · Unit: mm Complementary to 2SA950 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 V , ~200, Y: 160~3200 1 2003-03-24 2SC2120 2 2003-03-24 2SC2120 RESTRICTIONS ON


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PDF 2SC2120 2SA950 SC-43 2SC2120 2SA950
2SA950

Abstract: 2SC2120
Text: 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2120 Audio Power Amplifier Applications · High hFE: hFE (1) = 100~320 · 1 watts amplifier applications. · Unit: mm Complementary to 2SA950 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 , 2007-11-01 2SC2120 2 2007-11-01 2SC2120 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation


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PDF 2SC2120 2SA950 SC-43 2SA950 2SC2120
2SD811 TOSHIBA

Abstract: 2SC510 RY 228 2SD877 2SD2061 2SD867 2SD2023 2SD880 2SD1270 2SC2120
Text: fc\ "F *± a E±ä ^ ± ii s a E D ·tt-vírv tfvírv W * m TOSHIBA 2SC2120 2SD880 2SD880 2SC510 2SC510 , 2SD428 2SD867 2SD867 2SC779 2SD880 2SD880 2SD880 2SD877 2SD877 2SD877 2SC2120 2SD811 2SD867 2SD811 2SD811


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PDF 2SD228 2SD234 2SD235 2SC236 2SD237 2SD238 2SD241 2SD242 2SD243 2SD244 2SD811 TOSHIBA 2SC510 RY 228 2SD877 2SD2061 2SD867 2SD2023 2SD880 2SD1270 2SC2120
2SC2120

Abstract: 2sc2120 equivalent
Text: ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package , ST 2SC2120 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Current Gain , , Stock Code: 724) R Dated : 07/12/2002 ST 2SC2120 Ta=25 SEMTECH ELECTRONICS LTD


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PDF 2SC2120 100mA 700mA 500mA, 2SC2120 2sc2120 equivalent
2SC1885

Abstract: 2Sc2565 2SD551 IL 741 2SC2565 fujitsu 2sd1047 736a Toshiba 2sc2565 2SD427 2SD525
Text: ft 0 0 fi fi fi fi a 2SD718 2SD427 2SD551 2SC2120 2SD1047 2SD1047 2SD845 2SC2565 2SD345 2SC2565 , 2SD863 2SC1195 2SPS11 2SC2832 2SD2052 2SD551 2SD551 2SD665 2SD734 i 2SC2910 2SC2910 2SC2910 2SC2120


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PDF 2SD725 2SD726 2SD727 2SD823 2SD2233 2SD821 2SD1060 2SD525 2SD716 2SD718 2SC1885 2Sc2565 2SD551 IL 741 2SC2565 fujitsu 2sd1047 736a Toshiba 2sc2565 2SD427
2SC1815

Abstract: 2sc372 2sc2381 2sc2061 2sc1741 2sc1907 2SC2284 2SC2495 2sc458 2sc1726
Text: 2SC2274 2SC380 2SC1815 2SC372(G) 2SC2120 2SC2120 2SC2120 2SC1815 2SC503 2SC454 2SC458 2SC458(LG


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PDF 2SC944 2SC945 2SC947 2SC948 2SC1815 2SC387A 2SC1959 2SC1626 2sc372 2sc2381 2sc2061 2sc1741 2sc1907 2SC2284 2SC2495 2sc458 2sc1726
2SC2120

Abstract: 2sc2120 equivalent 2sC2120 transistor 2sC2120 y transistor
Text: ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package , ) Dated : 07/12/2002 ST 2SC2120 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit , 2SC2120 Ta=25 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Semtech International Holdings


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PDF 2SC2120 700mA 500mA, 2SC2120 2sc2120 equivalent 2sC2120 transistor 2sC2120 y transistor
2SC1006

Abstract: 2SC1885 2SC3359 2SC710 2sd1944 2SC1957 2SC2634 2SC2320 2SC2550 2sc1815
Text: 2SC1740LN 2SC 1996 a n. 2SD438 2SC2120 2SC1852 2SC3377 2SC 1997 B n 2SD545 2SC2120 2SC1851 2SC3377 , 2SC 2000 "" a n. 2SC2210 2SC1815 2SC1890 2SC1318 2SC2410 2SC 2001 / B « 2SD734 2SC2120 2SD467


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PDF 2SC2314 2SC1957 2SC2078 2SC2075 2SC1678 2SC2407 2SC2851 2SC2988 2SC1845 2SC1006 2SC1885 2SC3359 2SC710 2sd1944 2SC1957 2SC2634 2SC2320 2SC2550 2sc1815
2SD454

Abstract: 2SC901 2SC1667 2SC2516 NEC 2SD400 E 2SD647 2SD473 2sc2120 2s0867 2SD526
Text: * 2SD 466 2SD 467 2SD 468 _ 2SD 469 - 0 a ED 2SD545 2SD400 2SC2120 2SC2120 2SD867 2SC2001 , 2SC2060 0 « m * 2SD 470 ^ 2S0 471 ^ T * 2SD400 2SC2120 2SD524 2SD524 2SD526 W2SÜ1060 2SD526


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PDF 2SD439 2SD457 2SD642 2SD1196 2SD635 2SD633 2SD657 2SD523 2SC1449 2SC2236 2SD454 2SC901 2SC1667 2SC2516 NEC 2SD400 E 2SD647 2SD473 2sc2120 2s0867 2SD526
2SC2120

Abstract: ZZ25 2SA950 ZZ25IZI
Text: TOSHIBA_ 2SC2120 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC2120 AUDIO POWER AMPLIFIER APPLICATIONS Unit in mm • High hFE : hFE(1) = 100-320 • 1 Watts Amplifier Applications. • Complementary to 2SA950 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power , information contained herein is subject to change without notice. 1996-09-02 1/2 TOSHIBA 2SC2120 IC - VCE


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PDF 2SC2120 2SA950 SC-43 ZZ25IZI 2SC2120 ZZ25 2SA950 ZZ25IZI
2SC2120

Abstract: 2sC2120 y transistor transistor 2sc2120
Text: ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package , ) R Dated : 07/12/2002 ST 2SC2120 Characteristics at Tamb=25 OC Symbol Min. Typ. Max , 2SC2120 Ta=25 SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a


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PDF 2SC2120 700mA 500mA, 2SC2120 2sC2120 y transistor transistor 2sc2120
2SC 1207

Abstract: 2SC1741A 2SC2926 2SC2274 2SC1214 toshiba 2sc1384 2sc1959 2SC1906 2SC1687 2SC1253
Text: 2SD1682 2SC2274 2SC3708 2SC2120 2SC1959 2SC1627 2SC1626 2SC1626 2SC2120 2SC1626 2SC2001 2SC2002 2SC2003


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PDF 2SC1185 2SC1187 2SC1188 2SC1189 2SC1190 2SC1192 2SC1193 2SC1196 2SC792 2SC2999 2SC 1207 2SC1741A 2SC2926 2SC2274 2SC1214 toshiba 2sc1384 2sc1959 2SC1906 2SC1687 2SC1253
2sc2240 equivalent

Abstract: 2sc1815 equivalent 2sc3112 equivalent 2sa1015 equivalent 2sc2120 equivalent 2sc2458 equivalent 2Sc1959 equivalent 2SC1627 equivalent 2sc2878 equivalent 2SA1091 equivalent
Text: 2SA1312 2SC3325 2SA1313 - - - - 2SA950 2SC2120 - - 2SC3112 2SC2878 High p (2SC3113) VEBOÏ25V , 2SC3605 2SA817 2SC1627 2SA950 2SC2120 2SC2551 2SA1091 2SA1150 2SC2710 *: Macrowave Transistors


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PDF OT-23MOD. 2SC2712 2SA1162 2SC2713 2SA1163 2SC2859 2SA1182 2SC3138 2SA1255 2SC3265 2sc2240 equivalent 2sc1815 equivalent 2sc3112 equivalent 2sa1015 equivalent 2sc2120 equivalent 2sc2458 equivalent 2Sc1959 equivalent 2SC1627 equivalent 2sc2878 equivalent 2SA1091 equivalent
IC 7411 DATA SHEET

Abstract: IC 7411 2sC2120 transistor f 7416 IC 7411 datasheet IC 7416 2SC2120 Voltts IC 7416 datasheet 7416
Text: TO-92 PLASTIC-ENCAPSULATE TRANSISTORS 2SC2120 TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.6W (Tamb=25ºC) Collector Current TO-92 ICM: 0.8A 1. EMITTER Collector-base voltage V 2. COLLECTOR : 35V (BR) CBO Operating and storage junction temperature range 3. BASE Tstg : -55ºC to + 150ºC TJ : 150ºC ELECTRICAL CHARACTERISTICS (Tamb=25ºC unless otherwise , -92 PLASTIC-ENCAPSULATE TRANSISTORS TYPICAL CHARACTERISTICS 2SC2120 Pág. 2/2 Rua Juquiá, 217 - Vila Antonieta


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PDF 2SC2120 500mA, 2SC2120 IC 7411 DATA SHEET IC 7411 2sC2120 transistor f 7416 IC 7411 datasheet IC 7416 Voltts IC 7416 datasheet 7416
Plastic Encapsulate Transistors

Abstract: 2SC2120 2sc2120 equivalent
Text: 2SC2120 NPN Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol 1 2 Value Parameter Units VCBO Collector-Base Voltage 35 Collector Current -Continuous 0.8 A PCM Power Dissipation 0.6 W TJ, Tstg , specification will not be informed individual Page 1 of 2 2SC2120 NPN Type Elektronische Bauelemente


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PDF 2SC2120 100mA 01-Jun-2002 Plastic Encapsulate Transistors 2SC2120 2sc2120 equivalent
Not Available

Abstract: No abstract text available
Text: 2SC2120 TOSHIBA TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE (PCT PROCESS) 7sr ? 1 ? n Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS • • • High hpE : hpg (i) = 100-320 1 Watts Amplifier Applications. Complementary to 2SA950 . 5.1 M AX. 0.45 0.55 M A X. 0.45 M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter , 2SC2120 TOSHIBA IC - VCE hFE - IC 1000 Ed JS 300 Ta = 100°C- é H 2 fcä CÃ


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PDF 2SC2120 2SA950
2008 - 2SC2120Y

Abstract: 2SC2120 2SC2120-Y
Text: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC2120-O 2SC2120-Y x x x x Features Complementary Pair With 2SA950 Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN Silicon Transistors TO-92 Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage


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PDF 2SC2120-O 2SC2120-Y 2SA950 2SC2120Y 2SC2120 2SC2120-Y
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