The Datasheet Archive

2SC1980 datasheet (19)

Part Manufacturer Description Type PDF
2SC1980 Panasonic Silicon NPN epitaxial planer type transistor Original PDF
2SC1980 Panasonic Silicon NPN epitaxial planer type Original PDF
2SC1980 Panasonic NPN Transistor Original PDF
2SC1980 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
2SC1980 Others The Transistor Manual (Japanese) 1993 Scan PDF
2SC1980 Others Transistor Substitution Data Book 1993 Scan PDF
2SC1980 Others The Japanese Transistor Manual 1981 Scan PDF
2SC1980 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SC1980 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SC1980 Others Transistor Shortform Datasheet & Cross References Scan PDF
2SC1980 Others Shortform Transistor PDF Datasheet Scan PDF
2SC1980 Others Japanese Transistor Cross References (2S) Scan PDF
2SC1980 Others Cross Reference Datasheet Scan PDF
2SC1980 Panasonic Si NPN epitaxial planar. High voltage low-noise amplifier. Scan PDF
2SC1980R Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
2SC1980R Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
2SC1980S Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
2SC1980T Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
2SC1980T Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF

2SC1980 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
NEC 2532

Abstract: Ka 2535 2SC2240 2SC2460b 2SC2538 2sc2238 2SC1914A 2SC2939 2sc2555 2SC2407
Text: « 2SC3039 2SC2535 2SC2335 2SC2613 2SC2939 2SC4205 2SC 2543 / b ÎL 2SC2240 2SC1845 2SC1980 2SC1708A 2SC2389 2SC 2544 < b iL 2SC2909 2SC2240 2SC1845 2SC1980 2SC1708A 2SC2389 2SC 2545 ' B ÌL 2SC2240 2SC1844 2SC1685 2SC2320 2SC 2546 * b iL 2SC2240 2SC1841 2SC1980 2SC1914A 2SC 2547 t B iL 2SC2240 2SC1841 2SC1980 2SC1914A 2SC 2648 Nini M 2SC2753 2SC2570A 2SC3126 2SC267KH) 2SC 2549 ff 2SC2753


OCR Scan
PDF 2SC1923 2SC2352 2SC1359 2SC3776 2SC2345 2SC1778 2SC380I 2SA1469 2SD1270 NEC 2532 Ka 2535 2SC2240 2SC2460b 2SC2538 2sc2238 2SC1914A 2SC2939 2sc2555 2SC2407
TT 2076

Abstract: 2SC3358 NEC 2SC3358 2SC1957 2SC3098 T 2109 2SC923 2SC1775A 2SC2068 2SC2371
Text: 2SC2295 2SC1845 2SC1845 2SC1957 2SC1775A 2SC1775A 2SC1980 2SC1980 «± ii & S m * * * 2SC


OCR Scan
PDF 2SC1755 2SC2068 2SC1514 2SD1610 2SC1819 2SC3272 2SC2410 2SC2371 TT 2076 2SC3358 NEC 2SC3358 2SC1957 2SC3098 T 2109 2SC923 2SC1775A 2SC2068
NEC 2701

Abstract: NEC 2703 2701 NEC NEC 2705 2SC2724 2sc2257 2sc2786 2674 k 2679 2SC2911
Text: 2SC2856 2SC1980 2SC1708A 2SC 2675 □ -A 2SC1844 2SC2855 2SC1980 2SC 2677 0 ÍL 2SC2410


OCR Scan
PDF 2SC3608 2SD1238 2SC2999 2SC2786 2SC2724 2SC2926S 2SC2210 2SC2787 2SC2058S NEC 2701 NEC 2703 2701 NEC NEC 2705 2sc2257 2sc2786 2674 k 2679 2SC2911
d1384

Abstract: 2sd1944 d1888 2SC2200 2SC1730 1890A 2SD668A 2SC380-O 2sc2139 toshiba 2SD82G
Text: 2SC224Û 2SC2240 2SC1845 2SC1941 2SC1730 2SC1730 2SCÎ881(K) 2SC188KK) 2SC1980 2SC1980 2SD1850 2SD818 2SD819


OCR Scan
PDF 2SC1857 2SC1859 2SD545 2SD773 2SD468 2SC2230 2SC2236 2SC2200 d1384 2sd1944 d1888 2SC1730 1890A 2SD668A 2SC380-O 2sc2139 toshiba 2SD82G
1998 - 2SC1980

Abstract: TRANSISTOR 2SC1980 2SA921
Text: Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SA921 Unit: mm 5.0±0.2 q High collector to emitter voltage VCEO. Low noise voltage NV. s Absolute Maximum Ratings 13.5±0.5 q 5.1±0.2 s Features 4.0±0.2 (Ta=25°C) Parameter Symbol Ratings Unit VCBO 120 V VCEO 120 V Emitter , ~ 700 1 Transistor 2SC1980 PC - Ta IC - VCE 60 350 300 250 200 150 100 40µA


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PDF 2SC1980 2SA921 2SC1980 TRANSISTOR 2SC1980 2SA921
2003 - 2SA0921

Abstract: 2SC1980
Text: Transistors 2SC1980 Silicon NPN epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SA0921 Unit: mm 0.7±0.1 Absolute Maximum Ratings Ta = 25°C Symbol Junction temperature Storage temperature V 7 V 20 mA 50 mA 250 mW 150 °C Tstg Collector power dissipation 120 VEBO Tj Peak collector current VCEO PC , Publication date: March 2003 SJC00109BED 1 2SC1980 PC Ta IC VCE Collector current IC (mA


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PDF 2SC1980 2SA0921 2SA0921 2SC1980
2SC1973

Abstract: 2SC1980 2SC2076 2SA9211 2SA921
Text: €” 495 — PANASONIC INDL/ELEK-CSEMIJ 7EC D | ^^32034 □ 5 |~ r 2SC1980 2SC1980 ij zi > NPN x fc? , ? T- 3^-/5" 2SC1980 500 400 Jj u (X, 300 200 A n Vi .y- 100 Pc-Ta le — VcE


OCR Scan
PDF 2SC1973 750mW 100MHz 2SC1973 2SC1980 2SC2076 2SA9211 2SA921
337 transistor

Abstract: 2SC1980 2SA921 Gv-80dB
Text: Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SA921 Unit: mm 5.0±0.2 4.0±0.2 q High collector to emitter voltage VCEO. Low noise voltage NV. 0.7±0.2 q 5.1±0.2 s Features s Absolute Maximum Ratings 12.9±0.5 0.7±0.1 (Ta=25°C) Symbol Ratings Unit VCBO 120 V Collector , T hFE 180 ~ 360 260 ~ 520 360 ~ 700 337 Transistor 2SC1980 PC - Ta IC -


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PDF 2SC1980 2SA921 337 transistor 2SC1980 2SA921 Gv-80dB
sC4633

Abstract: 2sc1947 2sc1949 2SC1969 2sc1972 2sc1971 SC-4633 2SC1940 2SC1921 2SC1913A
Text: 50 0.5 1 1 20 20 200 5 0.1 0.45 0.3 0. 06 2SC1980 kt HV LN A 120 120 0.02 0.4 100 50 180 1040 5 , =80dB Rg=100K 2SA921 TO-92 fi ECB 2SC1980 4500* 10 0.02 1 NF max 2. 5dB f=500MHz TO-72ÏJ EBCS


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PDF 2SC1913A 2SC1914A 2SC1921 2SC1922 2SC1923 2SC1924 2SC1925 2SC1955 2SA562TM O-92JÃ sC4633 2sc1947 2sc1949 2SC1969 2sc1972 2sc1971 SC-4633 2SC1940 2SC1913A
2003 - 2SA0921

Abstract: 2SC1980
Text: Transistors 2SC1980 Silicon NPN epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SA0921 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 · High collector-emitter voltage (Base open) VCEO · Low noise voltage NV 0.7±0.2 Features 12.9±0.5 0.7±0.1 Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit VCBO 120 V Collector-emitter , 1 2SC1980 PC Ta IC VCE Collector current IC (mA) 300 200 100 IB = 50 µA 45


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PDF 2SC1980 2SA0921 2SA0921 2SC1980
2001 - 2SA0921

Abstract: 2SA921 2SC1980 TRANSISTOR 2sc1980
Text: Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SA0921 (2SA921) Unit: mm 5.0±0.2 G High collector to emitter voltage VCEO. Low noise voltage NV. I Absolute Maximum Ratings 13.5±0.5 G 5.1±0.2 I Features 4.0±0.2 (Ta=25°C) Parameter Symbol Ratings Unit VCBO 120 V VCEO 120 V , 2SC1980 PC - Ta IC - VCE 60 350 300 250 200 150 100 40µA 16 35µA 30µA 12 25µA


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PDF 2SC1980 2SA0921 2SA921) 2SA0921 2SA921 2SC1980 TRANSISTOR 2sc1980
2003 - Not Available

Abstract: No abstract text available
Text: Transistors 2SC1980 Silicon NPN epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SA0921 Features Unit: mm 5.0±0.2 4.0±0.2 Collector-emitter voltage (Base open) Collector current IC 20 50 mA mA °C Peak collector current ICP PC Tj Collector power dissipation Junction temperature Storage temperature 250 150 mW °C Tstg -55 to , SJC00109BED 1 2SC1980 PC Ta 500 24 IC VCE Ta = 25°C IB = 50 µA 45 µA 40 µA 16 35 µA 30 µA 12


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PDF 2SC1980 2SA0921
2003 - Not Available

Abstract: No abstract text available
Text: Transistors 2SC1980 Silicon NPN epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SA0921 Unit: mm 0.7±0.1 ■Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit VCBO 120 V Collector-emitter voltage (Base open) VCEO 120 V Emitter-base voltage (Collector open) VEBO 7 V Collector current IC 20 mA Peak , 2003 SJC00109BED 1 2SC1980 PC  Ta IC  VCE IC  VBE 24 Ta = 25°C IB = 50


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PDF 2SC1980 2SA0921
2SC2482

Abstract: 2SC2283 k 3496 2SC3393 2sc2785 h 2SC945 2SC3124 2SC3112 2sc2562 2SD1431
Text: 2SC3330 2SC2996 2SC2785 2SC3313 2SC2058S 2SC 3495 / = ft 2SC2240 2SC1845 2SC1980 2SC 3496 fei T


OCR Scan
PDF 2SC3552 2SD1433 2SC2482 2SC3478 2SD1610 2SC2632 2SC3269 2SC3209 2SC4743 2SC2283 k 3496 2SC3393 2sc2785 h 2SC945 2SC3124 2SC3112 2sc2562 2SD1431
2SC288A

Abstract: 2SC2026 Toshiba 2SC3281 2SC2645 toshiba 2sc3280 2SC4266 2sc3280 toshiba 2SC2804 2SC3358 2sc2465
Text: 2458L JK S 2SC3382 2SC3390 2SC2603 2SC1740SLN 2SC 2459 > JE 2 2SC2909 2SC2784 2SC1980 2SC4266


OCR Scan
PDF 2SC4106 2SC2898 2SC3870 2SC2139 2SC2740 2SC2334 2SD866 2SD1580 2SC3038 2SC288A 2SC2026 Toshiba 2SC3281 2SC2645 toshiba 2sc3280 2SC4266 2sc3280 toshiba 2SC2804 2SC3358 2sc2465
2SB642

Abstract: 2SD2529 2SD1995 2SB1627 2SD1993 2SD1010 2SC3312 2SD2436 2SD1199 2sd661
Text: I 2SC1980 f 2SA1123 I 2SC2631 f 2SA1127 I 2SC2634 2SD1302 2SA1128 · 120-340 * 100 1A Vebo :15V *0


OCR Scan
PDF 2SB642 2SA1619/A 2SB1322A 2SB1462 12SD2216 2SB1218A 12SD1819A 2SB1219/A 2SA921 2SD2258 2SB642 2SD2529 2SD1995 2SB1627 2SD1993 2SD1010 2SC3312 2SD2436 2SD1199 2sd661
1998 - 2SA921

Abstract: 2SA92 2SC1980 2SC198
Text: Transistor 2SA921 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 5.0±0.2 q High collector to emitter voltage VCEO. Low noise voltage NV. s Absolute Maximum Ratings 13.5±0.5 q 5.1±0.2 s Features 4.0±0.2 (Ta=25°C) Parameter Symbol Ratings Unit VCBO ­120 V VCEO ­120 V Emitter to base voltage VEBO ­5 V Peak collector current ICP ­50 mA Collector


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PDF 2SA921 2SC1980 2SA921 2SA92 2SC1980 2SC198
2SB1446

Abstract: 2SB642 2SD2458 2SD1995 2SD1993 2SD1010 2sc5335 2sb788 2SC2632 2SD1512
Text: noise ampli fier 2SB1463 2SD2240/A í 2SB1220 ' 2SD1821/A f 2SA1531/A i 2SC3929/A ; 2SA921 I 2SC1980


OCR Scan
PDF 2SB1462 2SB1218A 2SD1819A 2SB1219/A 2SD1820/A 2SB709A 2SD601A 2SB710/A 2SD602/A 2SA1309A 2SB1446 2SB642 2SD2458 2SD1995 2SD1993 2SD1010 2sc5335 2sb788 2SC2632 2SD1512
2003 - Not Available

Abstract: No abstract text available
Text: Transistors 2SA0921 (2SA921) Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Features Unit: mm 5.0±0.2 5.1±0.2 4.0±0.2 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol VCBO VCEO VEBO ICBO ICEO hFE fT Collector-base voltage (Emitter


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PDF 2SA0921 2SA921) 2SC1980
2SC1918

Abstract: 2SC1909 2SC1984 2SC1943 2SC1979 2SC1964 2sc1963 2SC1915 2SC1917 2SC1919
Text: 2SC1975 120 5 2A 2SC1976 36 4 2SC1977 36 2SC1978 36 2SC1979 2SC1980


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PDF 2SC1901 2SC1902 2SC1903 2SC1904 2SC1905 2SC1906 2SC1907 2SC1908 2SC1909 2SC1910 2SC1918 2SC1909 2SC1984 2SC1943 2SC1979 2SC1964 2sc1963 2SC1915 2SC1917 2SC1919
2003 - 2SA0921

Abstract: 2SA921 2SC1980
Text: Transistors 2SA0921 (2SA921) Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 4.0±0.2 · High collector-emitter voltage (Base open) VCEO · Low noise voltage NV 0.7±0.2 Features ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur so a d t d e Pr od ty ni bo yp p c


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PDF 2SA0921 2SA921) 2SC1980 2SA0921 2SA921 2SC1980
2001 - 2SA0921

Abstract: 2SA921 2SC1980
Text: Transistor 2SA0921 (2SA921) Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 5.0±0.2 G High collector to emitter voltage VCEO. Low noise voltage NV. I Absolute Maximum Ratings 13.5±0.5 G 5.1±0.2 I Features 4.0±0.2 (Ta=25°C) Parameter Symbol Ratings Unit VCBO ­120 V VCEO ­120 V Emitter to base voltage VEBO ­5 V Peak collector current ICP ­50 mA


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PDF 2SA0921 2SA921) 2SC1980 2SA0921 2SA921 2SC1980
2SA0921

Abstract: 2SA921 2SC1980
Text: Transistor 2SA0921 (2SA921) Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. s Absolute Maximum Ratings 0.7±0.2 q 0.7±0.1 (Ta=25°C) 12.9±0.5 q 5.1±0.2 s Features 4.0±0.2 Parameter Symbol Ratings Unit Collector to base voltage VCBO ­120 V Collector to emitter voltage VCEO ­120 V 0.45+0.15 Ð0


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PDF 2SA0921 2SA921) 2SC1980 2SA0921 2SA921 2SC1980
2sa899

Abstract: 2SC1904 2SA904A 2SA933LN 2SA898 2sc2673 2SA887 2SA881 2SA847A 2SA934
Text: NV(뮣) 150mV max Gv=80dB Rg=100K 2SC1980 TO-92® ECB 2SA921 80* -6 -0.001 5* Vno max 35mV


OCR Scan
PDF Ta-25t) 2SA847A ZSA854 2SA854S 2SA872 2SA872A 2SC1980 2SA921 2SA929 2SA930 2sa899 2SC1904 2SA904A 2SA933LN 2SA898 2sc2673 2SA887 2SA881 2SA847A 2SA934
2003 - 2SA921

Abstract: 2SC1980 2SA0921 2SC198
Text: Transistors 2SA0921 (2SA921) Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 · High collector-emitter voltage (Base open) VCEO · Low noise voltage NV 0.7±0.2 Features 12.9±0.5 0.7±0.1 Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit VCBO -120 V Collector-emitter voltage (Base open) VCEO -120 V Emitter-base voltage (Collector open) VEBO -5 V


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PDF 2SA0921 2SA921) 2SC1980 2SA921 2SC1980 2SA0921 2SC198
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