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2SC1940
2SC1940 ECAD Model
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2SC1940 datasheet (20)

Part ECAD Model Manufacturer Description Type PDF
2SC1940 2SC1940 ECAD Model NEC Semiconductor Selection Guide 1995 Original PDF
2SC1940 2SC1940 ECAD Model NEC Semiconductor Selection Guide Original PDF
2SC1940 2SC1940 ECAD Model Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
2SC1940 2SC1940 ECAD Model Others Transistor Shortform Datasheet & Cross References Scan PDF
2SC1940 2SC1940 ECAD Model Others Shortform Transistor PDF Datasheet Scan PDF
2SC1940 2SC1940 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SC1940 2SC1940 ECAD Model Others Cross Reference Datasheet Scan PDF
2SC1940 2SC1940 ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
2SC1940 2SC1940 ECAD Model Others Transistor Substitution Data Book 1993 Scan PDF
2SC1940 2SC1940 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SC1940 2SC1940 ECAD Model Others The Japanese Transistor Manual 1981 Scan PDF
2SC1940 2SC1940 ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SC1940 2SC1940 ECAD Model NEC Silicon Transistor Scan PDF
2SC1940 2SC1940 ECAD Model NEC NPN SILICON TRANSISTOR Scan PDF
2SC1940K 2SC1940K ECAD Model NEC NPN Silicon Transistors Scan PDF
2SC1940K 2SC1940K ECAD Model NEC NPN Silicon Transistor Scan PDF
2SC1940L 2SC1940L ECAD Model NEC NPN Silicon Transistors Scan PDF
2SC1940L 2SC1940L ECAD Model NEC NPN Silicon Transistor Scan PDF
2SC1940M 2SC1940M ECAD Model NEC NPN Silicon Transistor Scan PDF
2SC1940M 2SC1940M ECAD Model NEC NPN Silicon Transistors Scan PDF

2SC1940 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2SC1940

Abstract: TRANSISTOR 2SC1940 2SA915 VCEO120
Text: NEC NPN SILICON TRANSISTOR 2SC1940 DESCRIPTION The 2SC1940 is designed for use in driver stages of audio frequency amplifiers. FEATURES • High total power dissipation and high breakdown voltage: 1.0 W at 25 °C ambient temperature/VCEO=120 v • Complementary to the NEC 2SA915 PNP transistor , 400 hFE1 Test Conditions: Vce=10v- lc=10mA 284 NEC 2SC1940 TYPICAL CHARACTERISTICS (Ta=25 °C , 285 2SC1940 INPUT AND OUTPUT CAPACITANCE vs. REVERSE VOLTAGE 12 5 10 20 50 100 200 500 1000 Vcb


OCR Scan
PDF 2SC1940 2SC1940 2SA915 TRANSISTOR 2SC1940 VCEO120
2SC1885

Abstract: 2Sc2565 2SD551 IL 741 2SC2565 fujitsu 736a 2sd1047 Toshiba 2sc2565 2SD427 2SD525
Text: 2SC2229 2SC2229 2SC2705 2SC2001 2SC1940 2SC1940 2SC1941 2SC1851 2SC1885 2SCI885 2SC2632 2SC3245 2SC3245


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PDF 2SD725 2SD726 2SD727 2SD823 2SD2233 2SD821 2SD1060 2SD525 2SD716 2SD718 2SC1885 2Sc2565 2SD551 IL 741 2SC2565 fujitsu 736a 2sd1047 Toshiba 2sc2565 2SD427
Not Available

Abstract: No abstract text available
Text: <^£.mi-(^on.aactoi L/-* 10 duct i, Una. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 NPN SILICON TRANSISTOR 2SC1940 DESCRIPTION The 2SC1940 is designed for use in driver stages of audio frequency amplifiers. PACKAGE DIMENSIONS in millimeters (inches! FEATURES * High total power dissipation and high breakdown voltage: 1.0 Wat 25 °C ambient temperature/VCEO = 120 V ABSOLUTE MAXIMUM RATINGS Maximum Temperatures


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PDF 2SC1940 2SC1940
2010 - 2SC2240BL

Abstract: KT630A BF140 2SC2240GR TMPT1653N4 KT630B 2SC1841 2SC1940 2SC2240-GR 2SC2389
Text: LOW·POWER SILICON NPN Item Number Part Number Manufacturer V(BR)CEO (V) hFE Ic Max (A) fr (Hz) Cobo Max (F) ICBO Max (A) V(BR)CBO (V) Po Max (W) Derate Toper at (WrC) Max eC) Package Style V(BR)CEO BFY41 BFR21 KT630A BF156 SE7002 SE7002 MPS-LOl MPSLOl BSY79 2S0668 -2S0669 2SCB17 2SCB17 2N1445 KT630B HSE419 2SC1622A 2SC1622A 2SC2235 2SC1841 2SC28810 2SC4102 2SC1940 2SC1940 2SC1S41P 2SC1841P 2SC2459 2SC2713 KSC2316 O!;:'vO!i!:;t:n >= 100 V


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PDF BFY41 BFR21 KT630A BF156 SE7002 BSY79 2S0668 -2S0669 2SCB17 2SC2240BL BF140 2SC2240GR TMPT1653N4 KT630B 2SC1841 2SC1940 2SC2240-GR 2SC2389
2SC1940

Abstract: 2sa915 TRANSISTOR 2SC1940 Ge 2sa
Text: NEC ELECTRON DEVICE D E SC R IP T IO N frequency amplifiers. FEATURES NPN SILICON TRANSISTOR 2SC1940 The 2SC1940 is designed for use in driver stages of audio P A C K A G E D IM E N S IO N S in m illim eters (inches) 7.0MAK ¡0 275MAX ) · High total power dissipation and high breakdown voltage: 1.0W at 25°C ambient tem perature/VcEO = 120V · Complementary to the N E C 2SA 9 15 PNP transistor. ÌL7 A B SO LU T E M A X IM U M R A T IN G S Maximum Temperatures Storage Tem perature


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PDF 2SC1940 2SC1940 275MAX 2sa915 TRANSISTOR 2SC1940 Ge 2sa
MG30G1BL3

Abstract: MG50G1BL3 669a h 669A MG50G1BL3 toshiba 2SD427 2SCI815 2SD650 2SD649 2SD646A
Text: 2SD665 2SC2001 2SC1940 2SD1312 2SC2682 2SC2682 2SC2690 2SC2690A ^ ±Z 3 1 ÏL ÎL 2SC3800 2SD1292


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PDF 2SD645 2SD646 2SD646A 2SD647 2SD648 2SD649 2SD650 2SD654 2SD655 2SD656 MG30G1BL3 MG50G1BL3 669a h 669A MG50G1BL3 toshiba 2SD427 2SCI815
2SC1940

Abstract: 2SA915 TRANSISTOR 2SC1940
Text: PNP SILICON TRANSISTOR 2SA915 DESCRIPTION The 2SA915 is designed for use in driver stages of audio frequency amplifiers. FEATURES «High Total Power Dissipation and High Breakdown Voltage: 1.0 W at 25 °C Ambient Temperature/VcEO = -120 V • Complementary to the NEC 2SC1940 NPN Transistor. ABSOLUTE MAXIMUM RATINGS Maximum Temperatures Storage Temperature. —55to+150°C Junction Temperature. +150 °C Maximum Maximum Power Dissipation (Ta = 25 °C) Total Power Dissipation


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PDF 2SA915 2SA915 2SC1940 TRANSISTOR 2SC1940
transistor f420

Abstract: F420 transistor t430 transistor T591 transistor LT 5222 2SC1940 LT 745 S ifr 220 IFR 730 transistor A514
Text: NEC i?T/\f7 > IJ b >ì>x 9 Silicon Transistor 2SC1940 NPN + ìsTM& M =3 > >ì>X? NPN Silicon Epitaxial Transistor Audio Frequency Amplifier ot—r* tr>-r<9>-ru Y7A'7° U / > 9 'J Complementary to PNP 2SA915. o< , ÄBtJ±T"-ro Pt = 1.0W, VCEO = 120V Small package, high total power dissipation and high breakdown voltage , 10 20 ^^fiï le (mA) 2SC1940 >> S " ttítü li là Kos It r n BASE AND COLLECTOR SATURATION


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PDF 2SC1940 2SA9151 2SA915. -r700 /700Ut) 8686CK) T-880 transistor f420 F420 transistor t430 transistor T591 transistor LT 5222 2SC1940 LT 745 S ifr 220 IFR 730 transistor A514
2SD1557

Abstract: 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099
Text: ~50 ~80 ~50 m SP­8 ~140 ~160 2SA915 2SC1940 I C (A) 2SA916 2SC1941 , Output SP-8 SST SMALL MINI MOLD MINI MOLD 2SC1940 2SC1653 2SC1941 POWER MINI


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PDF 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 2SC1674 2SC1675 2SA1005 2SA1206* 2SA988 2SD1557 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099
Transistor 2sc1915

Abstract: 2SC1951 2SC1586 2SC1915 2SC1762 2SC1811 2SC1584 2SC1940 Tbb 38 138B
Text: Il iK AF Si.'E -120 ■5 -50 1 w 150 -0.1 -120 200 -10 -10 -10 10 80 * 2.5 278 2SC1940 > ^ > y


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PDF 2SC1940 2SC1941 2SC1951 150pS Transistor 2sc1915 2SC1951 2SC1586 2SC1915 2SC1762 2SC1811 2SC1584 2SC1940 Tbb 38 138B
2SC1918

Abstract: 2SC1909 2SC1984 2SC1943 2SC1979 2SC1964 2sc1963 2SC1915 2SC1917 2SC1919
Text: 200/unit 175 2SC1939 15 3 30 200/unit 175 2SC1940 2SC1941 120 160 5 5 50


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PDF 2SC1901 2SC1902 2SC1903 2SC1904 2SC1905 2SC1906 2SC1907 2SC1908 2SC1909 2SC1910 2SC1918 2SC1909 2SC1984 2SC1943 2SC1979 2SC1964 2sc1963 2SC1915 2SC1917 2SC1919
sC4633

Abstract: 2sc1947 2sc1949 2SC1969 2sc1972 2sc1971 SC-4633 2SC1940 2SC1914A 2SC1913A
Text: TO-220ABÍÍ BCE 2SC1929 50 10 0.01 3 2SA915 (sp—8) ECB 2SC1940 50 10 0.01 3 2SA916


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PDF 2SC1913A 2SC1914A 2SC1921 2SC1922 2SC1923 2SC1924 2SC1925 2SC1955 2SA562TM O-92JÃ sC4633 2sc1947 2sc1949 2SC1969 2sc1972 2sc1971 SC-4633 2SC1940 2SC1913A
1999 - uPD72002-11

Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
Text: 2SB734 2SB984 2SC1940 2SC1941 2SC2721 2SC2958 2SC2959 2SC3209 2SC3733 2SC4000 2SD1312 2SD1579 2SD1581 , 2SD1001 2SD1020 2SD596 2SD780 2SD780A 2SC1653 2SC1654 2SC1940 2SC1941 2SC2780 2SC3209 2SC3554 2SC3615


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PDF PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD72002-11 uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
1999 - uPD16305

Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
Text: ] ] ] 2SB605 2SB733 2SB734 2SB984 2SC1940 2SC1941 2SC2721 2SC2958 2SC2959 2SC3209 2SC3733 2SC4000 2SD1312 , 2SC1940 2SC1941 2SC2780 2SC3209 2SC3554 2SC3615 2SC3616 2SC3617 2SC3618 2SD1000 2SD1513 2SD1581 2SD1614


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PDF PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
2SA960

Abstract: 2sa910 2SA931 2SC1845 equivalent 2SA902 2sa979 2SA906 2SA978 2SC1586 2sa939
Text: 4.5 8 25 3 10 3 2SC1953 2SC1940 2SC1941 2SC1951 450* 3 290* 5.5 18 80* 5 80* 5 I


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PDF 2SA901 2SA902 2SA903 2SA904 2SA904A 2SA905 2SA906 2SA907 2SA908 2SA909 2SA960 2sa910 2SA931 2SC1845 equivalent 2SA902 2sa979 2SA906 2SA978 2SC1586 2sa939
2010 - 2N1375

Abstract: 2n1310 2N1389 2N1410 2N1416 2SC1940 Motorola 2N1363 sot-23 TAW texas 2N1307 2N1377
Text: LOW·POWER SILICON NPN Item Number Part Number Manufacturer V(BR)CEO (V) hFE Ic Max (A) fr (Hz) Cobo Max (F) ICBO Max (A) V(BR)CBO (V) Po Max (W) Derate Toper at (WrC) Max eC) Package Style V(BR)CEO BFY41 BFR21 KT630A BF156 SE7002 SE7002 MPS-LOl MPSLOl BSY79 2S0668 -2S0669 2SCB17 2SCB17 2N1445 KT630B HSE419 2SC1622A 2SC1622A 2SC2235 2SC1841 2SC28810 2SC4102 2SC1940 2SC1940 2SC1S41P 2SC1841P 2SC2459 2SC2713 KSC2316 O!;:'vO!i!:;t:n >= 100 V


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PDF BFY41 BFR21 KT630A BF156 SE7002 BSY79 2S0668 -2S0669 2SCB17 2N1375 2n1310 2N1389 2N1410 2N1416 2SC1940 Motorola 2N1363 sot-23 TAW texas 2N1307 2N1377
2sa899

Abstract: 2SC1904 2SA904A 2SA933LN 2sc2673 2SA898 2SA887 2SA881 2SA93 2sc1846
Text: -10 -0.01 3. 5 2SC1940 (SP-8) ECB 2SA915 50 -10 -0.01 3. 5 2SC1941 (SP-8) ECB 2SA916


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PDF Ta-25t) 2SA847A ZSA854 2SA854S 2SA872 2SA872A 2SC1980 2SA921 2SA929 2SA930 2sa899 2SC1904 2SA904A 2SA933LN 2sc2673 2SA898 2SA887 2SA881 2SA93 2sc1846
2000 - pa1476h

Abstract: pa80c PA1501H pa1437h PA1478H PA1556A pa1428ah PA2981 PA571T PA1556AH
Text: m ~16 ~ 25 ~50 ~80 ~ 140 2SA915 2SC1940 ~ 160 2SA916 2SC1941 SP­8 ~300 ~ 400 ~600 ~ 200 m , CDROM X13769XJ2V0CD00 08-19 s (3/4) TO92 2/2 SP8 2SC1940 2SC1941 2SC3209 2SC3615


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PDF X13769XJ2V0CD00 2SA1206* 2SC1674 2SA988 2SA992 2SC1841 2SC1845 2SA733 2SA990 2SC945 pa1476h pa80c PA1501H pa1437h PA1478H PA1556A pa1428ah PA2981 PA571T PA1556AH
1998 - 2SA1444 equivalent

Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
Text: ) ~50 m ~16 ~25 ~50 ~80 ~140 2SA915 2SC1940 ~160 2SA916 2SC1941 2SC3209 2SC4000 (250 V/ 100 mA) 2SA1221 , 2SD1615 2SD1615A 2SD1699 2SD1702 2SD1950 POWER MINI 2SC2780 TO-92 Driver Output (2/2) SP-8 2SC1940


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PDF X13769XJ2V0CD00 2SA1206 2SC1674 2SA988 2SA992 2SC1841 2SC1845 2SA733 2SA990 2SC945 2SA1444 equivalent BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
2002 - transistor 2N3563

Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
Text: 2SC1907 2SC1908 2SC1915 2SC1921 2SC1923 2SC1928 2SC1940 2SC1941 2SC1951 2SC1954 2SC1961 2SC1980 2SC1982


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PDF
1998 - NEC 10F triac

Abstract: 10F triac NEC scr 5P4M 2P4M PIN DIAGRAM thyristor battery charger 2p4m 3S4M SCR Ringing Choke Converter equivalent scr 2p4m 3s4m thyristor 2SK1272
Text: to 80 Up to 140 Up to 160 2SA915 Up to 400 Up to 600 2SA916 2SC1940 Up to 50


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PDF G10748EJDV0SG00 NEC 10F triac 10F triac NEC scr 5P4M 2P4M PIN DIAGRAM thyristor battery charger 2p4m 3S4M SCR Ringing Choke Converter equivalent scr 2p4m 3s4m thyristor 2SK1272
1993 - 2sk2500

Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
Text: No file text available


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PDF C11178JJCV0IF0012 C11178JJCV0IF MIL-HDBK-217 MILMIL10100 MIL-HDBK-217Fit 2sk2500 UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
2SC3133 cross reference

Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
Text: 2SC1913 2SC1915 2SC192 2SC1921 2SC1922 2SC1923 2SC1928 2SC193 2SC194 2SC1940 2SC1941 j 2SC1942 2SC195 M


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PDF 2N4401 2N5401 2N5551 2SA1004 2SA1010 2SA1013 2SA1015 2SA1016 2SA1017 2SA1019 2SC3133 cross reference Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
transistor NEC 2SK2500

Abstract: NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
Text: No file text available


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PDF MIL-HDBK-217 C11178EJCV0IF transistor NEC 2SK2500 NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
1997 - micro servo 9g

Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
Text: No file text available


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PDF V20HL, V25HS, V30HL, V30MX, V35HS, V40HL, V50HL, V55PI, X10679EJDV0SG00 micro servo 9g uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
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