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2SB858C-E Renesas Electronics Corporation Rochester Electronics 1,262 $1.67 $1.35
2SB858C(E) Renesas Electronics Corporation Chip1Stop 295 $6.92 $5.53

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2SB858 datasheet (26)

Part Manufacturer Description Type PDF
2SB858 Hitachi Semiconductor Silicon PNP Transistor Original PDF
2SB858 Hitachi Semiconductor Silicon PNP Triple Diffused Original PDF
2SB858 Renesas Technology Silicon PNP Triple Diffused Original PDF
2SB858 Renesas Technology Silicon PNP Triple Diffused Original PDF
2SB858 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
2SB858 Continental Device India TO-220 PNP Power Package Transistors Scan PDF
2SB858 Others Transistor Shortform Datasheet & Cross References Scan PDF
2SB858 Others Shortform Transistor PDF Datasheet Scan PDF
2SB858 Others Japanese Transistor Cross References (2S) Scan PDF
2SB858 Others Cross Reference Datasheet Scan PDF
2SB858 Others The Transistor Manual (Japanese) 1993 Scan PDF
2SB858 Others Transistor Substitution Data Book 1993 Scan PDF
2SB858 Others The Japanese Transistor Manual 1981 Scan PDF
2SB858 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SB858 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SB858B Renesas Technology Silicon PNP Triple Diffused Original PDF
2SB858B Continental Device India Semiconductor Device Data Book 1996 Scan PDF
2SB858B Continental Device India TO-220 PNP Power Package Transistors Scan PDF
2SB858B Others Transistor Shortform Datasheet & Cross References Scan PDF
2SB858C Renesas Technology Silicon PNP Triple Diffused Original PDF

2SB858 Datasheets Context Search

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2sb857

Abstract:
Text: 2SB857, 2SB858 Silicon PNP Triple Diffused HITACHI Application Low frequency power , 150 -4 5 to +150 2SB858 -7 0 -6 0 -5 -4 -8 40 150 - 45 to +150 Unit V V V A A W °C °C 2SB857, 2SB858 Electrical Characteristics Item Collector to base breakdown voltage Collector to emitter , = 2 5 °C ) 2SB857 Symbol ^(BR)CBO 2SB858 Max - - - -1 Min -7 0 -5 0 -5 Typ - , . The 2SB857 and 2SB858 are grouped by hF E 1 as follows. 2. B 60 to 120 C Pulse test D 100 to 200 160


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PDF 2SB857, 2SB858 2SD1133 2SD1134 2SB857 2SB857 D-85622 2sb858
2SB857

Abstract:
Text: Inchange Semiconductor Product Specification 2SB857 2SB858 Silicon PNP Power Transistors , voltage Collector-emitter voltage SEM E ANG CH Open base 2SB858 VEBO IN Open , Specification 2SB857 2SB858 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise , MIN TYP. MAX UNIT -50 IC=-50mA; RBE= 2SB858 V -60 V(BR)CBO Collector-base , 15 MHz Inchange Semiconductor Product Specification 2SB857 2SB858 Silicon PNP Power


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PDF 2SB857 2SB858 O-220C 2SD1133/1134 2SB858
1999 - 2SB857

Abstract:
Text: 2SB857, 2SB858 Silicon PNP Triple Diffused Application Low frequency power amplifier , . Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB857 2SB858 , Tstg ­45 to +150 ­45 to +150 °C Note: 1. Value at T C = 25°C 2SB857, 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 2SB858 Item Symbol Min Typ Max Min Typ , transfer ratio hFE1* Collector to emitter saturation voltage 1 Notes: 1. The 2SB857 and 2SB858


Original
PDF 2SB857, 2SB858 2SD1133 2SD1134 O-220AB 2SB857 2SB857 2SB858 2SD1134 Hitachi DSA00333
1997 - Hitachi DSA001650

Abstract:
Text: 2SB857, 2SB858 Silicon PNP Triple Diffused Application Low frequency power amplifier , . Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB857 2SB858 , Tstg ­45 to +150 ­45 to +150 °C Note: 1. Value at TC = 25°C 2SB857, 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 2SB858 Item Symbol Min Typ Max Min Typ , Collector to emitter saturation voltage hFE1* 1 2 2 2 Notes: 1. The 2SB857 and 2SB858 are


Original
PDF 2SB857, 2SB858 2SD1133 2SD1134 O-220AB 2SB857 D-85622 Hitachi DSA001650
2005 - 2SB857

Abstract:
Text: JMnic Product Specification 2SB857 2SB858 Silicon PNP Power Transistors DESCRIPTION , -50 Open base 2SB858 VEBO VALUE V -60 Open collector -5 V IC Collector , =25 JMnic Product Specification 2SB857 2SB858 Silicon PNP Power Transistors CHARACTERISTICS Tj , breakdown voltage MIN TYP. MAX UNIT -50 IC=-50mA; RBE= 2SB858 V -60 V(BR)CBO , Specification 2SB857 2SB858 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions


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PDF 2SB857 2SB858 O-220C 2SD1133/1134 2SB857 2SB858
Not Available

Abstract:
Text: 2SB857, 2SB858 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier , 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB857 2SB858 Unit , Tstg — to +150 45 - 4 5 to +150 °C Note: 1. Value at T c = 25°C 2SB857, 2SB858 Electrical Characteristics (Ta 25 °C) = 2SB857 Item 2SB858 Symbol Base to em itter voltage , = ^ V , E lc = -0 .5 A*2 VB E Gain bandwidth product fT Notes: 1. The 2SB857 and 2SB858


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PDF 2SB857 2SB858 2SD1133 2SD1134 O-220AB 2SB857 15ratio 2SB858
2sb857

Abstract:
Text: 2SB857, 2SB858 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier , VE B 0 lc lC (p e a k ) Pc*1 Tj Tstg 2SB857 -7 0 -5 0 -5 2SB858 -7 0 -6 0 -5 Unit V V V A A W °C °C -A -8 40 150 - 4 5 to +150 -A -8 40 150 - 4 5 to +150 2SB857, 2SB858 , ratio 2SB858 Max - Symbol ^(B R )C B O Min -7 0 Typ - Min -7 0 Typ - Max , : 1. The 2SB857 and 2SB858 are grouped by hF E 1 as follows. 2. Pulse test B 60 to 120 C D


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PDF 2SB857 2SB858 2SD1133 2SD1134 O-220AB 2SB857 2SB857,
1998 - Hitachi DSA002787

Abstract:
Text: 2SB857, 2SB858 Silicon PNP Triple Diffused Application Low frequency power amplifier , (peak) PC * Tj Tstg 1 2SB857 ­70 ­50 ­5 ­4 ­8 40 150 ­45 to +150 2SB858 ­70 ­60 ­5 ­4 ­8 40 150 ­45 to +150 Unit V V V A A W °C °C 2SB857, 2SB858 Electrical Characteristics (Ta = 25 , breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO 1 2SB858 Max - - - , 2SB858 are grouped by h FE1 as follows. 2. Pulse test B 60 to 120 C 100 to 200 D 160 to 320 Maximum


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PDF 2SB857, 2SB858 2SD1133 2SD1134 O-220AB 2SB857 2SB857 Hitachi DSA002787
2000 - 2SB858

Abstract:
Text: 2SB857, 2SB858 Silicon PNP Triple Diffused ADE-208-859 (Z) 1st. Edition Sep. 2000 , °C) Ratings Item Symbol 2SB857 2SB858 Unit Collector to base voltage VCBO ­70 ­70 , : 1. Value at TC = 25°C 2SB857, 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 2SB858 , voltage 1 Notes: 1. The 2SB857 and 2SB858 are grouped by h FE1 as follows. 2. Pulse test B C , power dissipation Pc (W) 60 2SB857 2SB858 ­2 ­5 ­10 ­20 ­50 ­100 Collector to emitter Voltage


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PDF 2SB857, 2SB858 ADE-208-859 2SD1133 2SD1134 O-220AB 2SB857 2SB858 2SB857 2SD1134 DSA003644
2SB557 TOSHIBA

Abstract:
Text: 2SB 595 St 2 2SB633 2SA1069 2SB858 2SB1293 2SB 596 S S 2SB507 2SB703 2SB858 2SB942 2SA1634 , 2SB858 2SA1634


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PDF 2SB596 2SA1634 2SB544 2SA496 2SB562 2SA683 2SB1035 2SA934 2SB596 2SA1069 2SB557 TOSHIBA 2SB1314 toshiba 2sb554 2SB546A 2SB554 2sa483 2SB861 2SB857 2SB54
2sb857

Abstract:
Text: SavantIC Semiconductor Product Specification 2SB857 2SB858 Silicon PNP Power Transistors , UNIT -70 V -50 Open base 2SB858 VEBO VALUE V -60 Open collector -5 V , ~150 TC=25 SavantIC Semiconductor Product Specification 2SB857 2SB858 Silicon PNP Power , =-50mA; RBE=; V -60 2SB858 V(BR)CBO Collector-base breakdown voltage IC=-10µA; IE=0 -70 , 2SB858 SavantIC Semiconductor Product Specification 2SB857 2SB858 Silicon PNP Power


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PDF 2SB857 2SB858 O-220C 2SD1133/1134 2SB857 2SB858 2sb858 datasheet
2000 - transistor 2SB857

Abstract:
Text: products contained therein. 2SB857, 2SB858 Silicon PNP Triple Diffused ADE-208-859 (Z) 1st , Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB857 2SB858 Unit Collector to base , °C Note: 1. Value at TC = 25°C 2SB857, 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 2SB858 Item Symbol Min Typ Max Min Typ Max Unit Test conditions , saturation voltage 1 Notes: 1. The 2SB857 and 2SB858 are grouped by h FE1 as follows. 2. Pulse test B


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PDF D-85622 transistor 2SB857 2SB857 2SB858 2SD1133 2SD1134
2000 - 2SB857

Abstract:
Text: products contained therein. 2SB857, 2SB858 Silicon PNP Triple Diffused ADE-208-859 (Z) 1st , Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB857 2SB858 Unit Collector to base , °C Note: 1. Value at TC = 25°C 2SB857, 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 2SB858 Item Symbol Min Typ Max Min Typ Max Unit Test conditions , saturation voltage 1 Notes: 1. The 2SB857 and 2SB858 are grouped by h FE1 as follows. 2. Pulse test B


Original
PDF D-85622 2SB857 2SB858 2SD1133 2SD1134
2SB857

Abstract:
Text: HITACHI 2SB857, 2SB858 SILICON PNP TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1133 AND 2SD1134 17 I 1 rO.I 153im ' -0.08 1. He« 2. Cotkiw (Flange) 3 , CHARACTERISTICS (Ta=25aC) Jiem Symlwjl Test Condition 2SB857 2SB858 Unii min, typ. max. min. ' typ , 2SB857 and 2SB858 are grouped by h rei as follows. * Pulse Test _ B C D 60 to 120 100 10 200 160 io 320 HITACHI 2SB857, 2SB858 C'ollcckw io l'initier voltige V(r: (Vj COLLECTOR TO


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PDF 2SB857, 2SB858 2SD1133 2SD1134 153im O-22QAB) 2SB857 2SI3B58 2SB858 25B857 2SD1134
2SB858

Abstract:
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB858 DESCRIPTION ·Collector Current: IC= -4A ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -2A ·High Collector Power Dissipation ·Complement to Type 2SD1134 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE , isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB858


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PDF 2SB858 2SD1134 2SB858 2SD1134
2000 - Not Available

Abstract:
Text: products contained therein. 2SB857, 2SB858 Silicon PNP Triple Diffused ADE-208-859 (Z) 1st. Edition , ­5 ­4 ­8 40 150 ­45 to +150 2SB858 ­70 ­60 ­5 ­4 ­8 40 150 ­45 to +150 Unit V V V A A W °C °C 2SB857, 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 Item Collector to base breakdown voltage , (BR)CBO V(BR)CEO V(BR)EBO I CBO 1 2SB858 Max - - - ­1 320 - ­1 ­1 - Min ­70 ­60 ­5 - 60 35 , bandwidth product f T Notes: 1. The 2SB857 and 2SB858 are grouped by h FE1 as follows. 2. Pulse test B 60


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PDF D-85622
2SA748

Abstract:
Text: 2: 2SA659 2SA1015 2SA733 2SA844 2SA933 2SA 768 — ■y-virv 2SB596 2SB858 2SB942 2SB1334 2SA 769 - ■ö-virv 2SB596 2SB858 2SB942 2SA1634 2SA 770 2SB553 2SB566AOO 2SB942 2SB1289


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PDF 2SA1705 2SB548 2SA715 2SA684 2SB1043 2SB817 2SA1232 2SB514 2SA985 2SA748 2SB927 2SA757B 2SB1043 2SA715 2SA985 NEC 2sa933 2SB596 2sa763
2SB858

Abstract:
Text: HITACHI 2SB857, 2SB858 S IL IC O N P N P T R I P L E D IF F U S E D L O W F R E Q U E N C Y P O W E R A M P L IF IE R C O M P L E M E N T A R Y P A IR W IT H 2SD 1133 A N D 2 S D 1 134 !- Be« C o lle e n * 2 tí'Usyt i } I-m a te r i,D in ) c íís U )n » i n l i m i) ( J E O E C TO -2 20A B) A B S O L U T E M A X IM U M R A T IN G S Item Collector to base voltage Collector lo , . I) lot 120 | ' 60 to 120 j I < X) to 200 I HITACHI 2SB857, 2SB858 A R E A O F S A F E


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PDF 2SB857, 2SB858 2SBS57 2SB85S 2SB858
2SB857

Abstract:
Text: products contained therein. 2SB857, 2SB858 Silicon PNP Triple Diffused ADE-208-859 (Z) 1st , Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB857 2SB858 Unit Collector to base , °C Note: 1. Value at TC = 25°C 2SB857, 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 2SB858 Item Symbol Min Typ Max Min Typ Max Unit Test conditions , saturation voltage 1 Notes: 1. The 2SB857 and 2SB858 are grouped by h FE1 as follows. 2. Pulse test B


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PDF D-85622 2SB857 2SB858 2SD1133 2SD1134
2SA1015

Abstract:
Text: 2SA1425 2SB549 2SB858 2SA 794A të T 2SB631K 2SA1425 2SA 795 fâ T 2SB858 2SA1111 2SA


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PDF 2SB631 2SA743 2SA699A 2SB1064 2SA1339 2SA1015 2SA1016 2SA1015 2SA675 2SA836 2sa798 2SA1207 NEC k 787 2SB631 2SA836 2sb631 hitachi 2sa733 2SA785
2SB821

Abstract:
Text: 2 2SB858 HjÏ LF PA -70 -60 -4 40 -1 -50 60 320 -4 -1 -1 -2 -0. 2 - 63 - M M M ft tt (Ta , 2 SDÌ134 TO-220AB® BCE 2SB858


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PDF 2SB805 2SB806 2SB807 2SB808 2SB810 2SB811 O-220ABJFÃ 2SB834 2SB835 2SD1077L 2SB821 2SB833 2SB817 2SB816 2SB815 2SB814 2sb852k-a
b 817

Abstract:
Text: 2SB1361 2SB 813 , H m 2SA1012 2SB703 2SB858 2SB942 2SB1334 2SB 814 . fô T 2SA1257 2SA1163 2SA811A , 2SB8582SB857 2SB945 2SB1291 2SB 825 ^ 2SB553 2SB703 2SB946 2SB1289 2SB 826 H # 2SB703


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PDF 2SA1703 2SB909M 2SA1705 2SB1044M 2SB1214 2SA1194 2SB1272 2SB76500 2SB1119 b 817 toshiba 2SB755 B817 2SB897 2SB755 2SB927 2SA1213 2SB1272 2SA1705 2SB1044M
tt 2144

Abstract:
Text: - 131 - m « Type No. tt « Manuf. = SANYO Ä 2 TOSHIBA B m NEC B ÎL HITACHI « ± a FUJITSU «S T MATSUSHITA = m MITSUBISHI □ - A ROHM 2SC 2117 s: s 2SCZ3Z9 2SC1947 2SC 2118 s 2 2SC1965 2SC 2119 M 2 2SC2078 2SB858 2SC 2120 S $ 2 2SD734 2SC2001 2SD467 2SC1383 2SC3580 2SC3377 2SC 2121 2SD811 2SC 2122 e K S: 2SD811 2SC 2123 m s. 2SC 2127 „ grUJc 2SC1195 2SC 2127A Ü5TS5C 2SC2139 2SC 2128 frSÄ 2SD643 2SC1844 2SC 2129 H S 2SC3069


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PDF 2SC1947 2SC1965 2SC2078 2SB858 2SD734 2SC2001 2SD467 2SC1383 2SC3580 2SC3377 tt 2144 2SC3358 2SC2320 2SC2381 2SD811 TOSHIBA TT 2141 2SC2496A 2SD467 2SC2914 2SC1947
2SB857

Abstract:
Text: HITACHI 2SD1133, 2SD1134 SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SB857 AND 2SB858 TI f I - 12.7min. I&.ÌMX. 1. iw 2. Collector (J:ljJlg.C) i. Emitter (Dinvcriiiorts iii mru) (JEDEC T0-22ÛAB) ■ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Item Symbol 2SDI133 2SD1134 Unit Collector lo base voltage Vcito 70 70 V Collector io emitter voltage VCEO 50 60 V Emitter to base voltage Vebo 5 5 V Collector current Ic 4 4 A Collector peak current iC


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PDF 2SD1133, 2SD1134 2SB857 2SB858 T0-22Ã 2SDI133 2SD1134 2SD1133 2SB858
Not Available

Abstract:
Text: 2 15 500 2SB858 70 60 5 40 4 1 50 60 35 320 1 0.1 4 4 1 2 15 500 2SB858B 70 60 5 40 4 1 50 60 35 120 1 0.1


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PDF O-220 2N6107 2N6109 2N6111 2SA614 2SA614R 2SA614Y 2SA748 2SA748P 2SA748Q
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