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2SB857C-E Renesas Electronics Corporation Rochester Electronics 1,074 $2.32 $1.88
2SB857C(E) Renesas Electronics Corporation Chip1Stop 190 $9.38 $7.51

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2SB857 datasheet (32)

Part Manufacturer Description Type PDF
2SB857 Hi-Sincerity Mocroelectronics PNP Epitaxial Planar Transistor Original PDF
2SB857 Hitachi Semiconductor Silicon PNP Triple Diffused Original PDF
2SB857 Hitachi Semiconductor Silicon PNP Transistor Original PDF
2SB857 Renesas Technology Silicon PNP Triple Diffused Original PDF
2SB857 Renesas Technology Silicon PNP Triple Diffused Original PDF
2SB857 Various Russian Datasheets Transistor Original PDF
2SB857 Continental Device India TO-220 PNP Power Package Transistors Scan PDF
2SB857 Others Transistor Shortform Datasheet & Cross References Scan PDF
2SB857 Others Shortform Transistor PDF Datasheet Scan PDF
2SB857 Others Japanese Transistor Cross References (2S) Scan PDF
2SB857 Others Cross Reference Datasheet Scan PDF
2SB857 Others The Transistor Manual (Japanese) 1993 Scan PDF
2SB857 Others Transistor Substitution Data Book 1993 Scan PDF
2SB857 Others The Japanese Transistor Manual 1981 Scan PDF
2SB857 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SB857 Others Scan PDF
2SB857 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SB857B Renesas Technology Silicon PNP Triple Diffused Original PDF
2SB857B Continental Device India Semiconductor Device Data Book 1996 Scan PDF
2SB857B Continental Device India TO-220 PNP Power Package Transistors Scan PDF

2SB857 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2005 - T6C transistor

Abstract: transistor 206 2SB857
Text: : 2SB857L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SB857-x-T6C-K 2SB857L-x-T6C-K 2SB857-x-TN3-R 2SB857L-x-TN3-R 2SB857-x-TN3-T 2SB857L-x-TN3-T Package TO-126C TO-252 TO-252 Pin Assignment 1 2 3 E C B B C E B C E Packing Bulk Tape Reel Tube 2SB857L-x-T6C-K , UNISONIC TECHNOLOGIES CO., LTD 2SB857 PNP SILICON TRANSISTOR SILICON PNP TRANSISTOR , -206,C 2SB857 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25) PARAMETER Collector-Base


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PDF 2SB857 O-126C O-252 2SB857L 2SB857-x-T6C-K 2SB857L-x-T6C-K 2SB857-x-TN3-R 2SB857L-x-TN3-R 2SB857-x-TN3-T 2SB857L-x-TN3-T T6C transistor transistor 206 2SB857
2sb857

Abstract: 2sb858
Text: 2SB857 , 2SB858 Silicon PNP Triple Diffused HITACHI Application Low frequency power , = 25°C Symbol VC B Q VC E Q VE B Q lc lC (p e a k | Pc*1 Tj Tstg 2SB857 -70 -50 -5 -4 -8 40 , 2SB857 ,2SB858 Electrical Characteristics Item Collector to base breakdown voltage Collector to emitter , = 2 5 °C ) 2SB857 Symbol ^(BR)CBO 2SB858 Max - - - -1 Min -7 0 -5 0 -5 Typ - , . The 2SB857 and 2SB858 are grouped by hF E 1 as follows. 2. B 60 to 120 C Pulse test D 100 to 200 160


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PDF 2SB857, 2SB858 2SD1133 2SD1134 2SB857 2SB857 D-85622 2sb858
1997 - Hitachi DSA001650

Abstract: No abstract text available
Text: 2SB857 , 2SB858 Silicon PNP Triple Diffused Application Low frequency power amplifier , . Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB857 2SB858 , Tstg ­45 to +150 ­45 to +150 °C Note: 1. Value at TC = 25°C 2SB857 , 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 2SB858 Item Symbol Min Typ Max Min Typ , Collector to emitter saturation voltage hFE1* 1 2 2 2 Notes: 1. The 2SB857 and 2SB858 are


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PDF 2SB857, 2SB858 2SD1133 2SD1134 O-220AB 2SB857 D-85622 Hitachi DSA001650
2005 - transistor 206

Abstract: 2sb857
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB857 SILICON PNP TRANSISTOR DESCRIPTION PNP SILICON TRANSISTOR Low frequency power amplifier. *Pb-free plating product number: 2SB857L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SB857-x-T6C-A-K 2SB857L-x-T6C-A-K 2SB857-x-TN3-F-R 2SB857L-x-TN3-F-R 2SB857-x-TN3-F-T 2SB857L-x-TN3-F-T Package TO-126C TO-252 TO-252 Pin Assignment 1 2 3 E C B B C E B C E , 4 QW-R217-206,B 2SB857 ABSOLUTE MAXIMUM RATING (Ta=25) SYMBOL VCBO VCEO VEBO IC IC(PEAK


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PDF 2SB857 2SB857L 2SB857-x-T6C-A-K 2SB857L-x-T6C-A-K 2SB857-x-TN3-F-R 2SB857L-x-TN3-F-R 2SB857-x-TN3-F-T 2SB857L-x-TN3-F-T O-126C O-252 transistor 206 2sb857
2SB557 TOSHIBA

Abstract: 2SB1314 toshiba 2sb554 2SB554 2sa483 2SB546A 2SB596 2SB857 2SB557 2SB54
Text: 2SA683 2SB1035 2SA934 2S8 565 . B ÎL 2SB596 2SA1069 2SB857 2SB1371 2SB1334 2SB 566 y B ÎL 2SB633 2SB596 2SB703 2SB857 2SB1334 2SB 566AK B ÎL 2SB1334 2SB 56 6 K ni 2SB1334 2SB 567 a , 572 „ =E hn-5 2SB507 2SB596 2SB857 2SB1314 2SB1369 2SB 573 ^ ihö-7 2SB507 2SB596 2SB857 2SB1314 2SB1369 2SB 574 íhO-7 2SB507 2SB596 2SB857 2SB 575 ï ha-5 2SB824 2SB595 2SB857 2SB 576 ' ï hn-5 2SB824 2SB595 2SB857 2SB 577 , =E ha—7 2SB920L 2SB595 2SB857 2SB 578 -


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PDF 2SB596 2SA1634 2SB544 2SA496 2SB562 2SA683 2SB1035 2SA934 2SB596 2SA1069 2SB557 TOSHIBA 2SB1314 toshiba 2sb554 2SB554 2sa483 2SB546A 2SB857 2SB557 2SB54
1999 - 2SB857

Abstract: 2SB858 2SD1133 2SD1134 Hitachi DSA00333
Text: 2SB857 , 2SB858 Silicon PNP Triple Diffused Application Low frequency power amplifier , . Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB857 2SB858 , Tstg ­45 to +150 ­45 to +150 °C Note: 1. Value at T C = 25°C 2SB857 , 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 2SB858 Item Symbol Min Typ Max Min Typ , transfer ratio hFE1* Collector to emitter saturation voltage 1 Notes: 1. The 2SB857 and 2SB858


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PDF 2SB857, 2SB858 2SD1133 2SD1134 O-220AB 2SB857 2SB857 2SB858 2SD1134 Hitachi DSA00333
2005 - 2SB857

Abstract: 2SB858
Text: JMnic Product Specification 2SB857 2SB858 Silicon PNP Power Transistors DESCRIPTION , CONDITIONS Open emitter Collector-emitter voltage 2SB857 Emitter-base voltage UNIT -70 V , =25 JMnic Product Specification 2SB857 2SB858 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO PARAMETER CONDITIONS 2SB857 Collector-emitter , Specification 2SB857 2SB858 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions


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PDF 2SB857 2SB858 O-220C 2SD1133/1134 2SB857 2SB858
2005 - 2SB857

Abstract: transistor 2SB857 Unisonic Technologies R217
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB857 PNP SILICON TRANSISTOR SILICON PNP TRANSISTOR DESCRIPTION Low frequency power amplifier. *Pb-free plating product number: 2SB857L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SB857-x-T6C-K 2SB857L-x-T6C-K 2SB857-x-TN3-R 2SB857L-x-TN3-R 2SB857-x-TN3-T 2SB857L-x-TN3-T www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd , Tape Reel Tube 1 of 4 QW-R217-006,C 2SB857 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM


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PDF 2SB857 2SB857L 2SB857-x-T6C-K 2SB857L-x-T6C-K 2SB857-x-TN3-R 2SB857L-x-TN3-R 2SB857-x-TN3-T 2SB857L-x-TN3-T O-126C O-252 2SB857 transistor 2SB857 Unisonic Technologies R217
2009 - 2SB857

Abstract: R217
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB857 PNP SILICON TRANSISTOR SILICON PNP TRANSISTOR DESCRIPTION Low frequency power amplifier. Lead-free: 2SB857L Halogen-free: 2SB857G ORDERING INFORMATION Normal 2SB857-x-T6C-K 2SB857-x-TA3-T 2SB857-x-TN3-R Order Number Lead Free 2SB857L-x-T6C-K 2SB857L-x-TA3-T 2SB857L-x-TN3-R Halogen Free 2SB857G-x-T6C-K 2SB857G-x-TA3-T 2SB857G-x-TN3-R , -006.E 2SB857 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°C) PARAMETER Collector-Base Voltages


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PDF 2SB857 2SB857L 2SB857G 2SB857-x-T6C-K 2SB857-x-TA3-T 2SB857-x-TN3-R 2SB857L-x-T6C-K 2SB857L-x-TA3-T 2SB857L-x-TN3-R 2SB857G-x-T6C-K 2SB857 R217
Not Available

Abstract: No abstract text available
Text: 2SB857 ,2SB858 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier , 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB857 2SB858 Unit , Tstg — to +150 45 - 4 5 to +150 °C Note: 1. Value at T c = 25°C 2SB857 , 2SB858 Electrical Characteristics (Ta 25 °C) = 2SB857 Item 2SB858 Symbol Base to em itter voltage , = ^ V , E lc = -0 .5 A*2 VB E Gain bandwidth product fT Notes: 1. The 2SB857 and 2SB858


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PDF 2SB857 2SB858 2SD1133 2SD1134 O-220AB 2SB857 15ratio 2SB858
1998 - Hitachi DSA002787

Abstract: No abstract text available
Text: 2SB857 , 2SB858 Silicon PNP Triple Diffused Application Low frequency power amplifier , (peak) PC * Tj Tstg 1 2SB857 ­70 ­50 ­5 ­4 ­8 40 150 ­45 to +150 2SB858 ­70 ­60 ­5 ­4 ­8 40 150 ­45 to +150 Unit V V V A A W °C °C 2SB857 , 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base , C = ­0.5 A*2 Base to emitter voltage VBE Gain bandwidth product f T Notes: 1. The 2SB857 and


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PDF 2SB857, 2SB858 2SD1133 2SD1134 O-220AB 2SB857 2SB857 Hitachi DSA002787
2sb857

Abstract: No abstract text available
Text: 2SB857 ,2SB858 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier , VE B 0 lc lC (p e a k ) Pc*1 Tj Tstg 2SB857 -7 0 -5 0 -5 2SB858 -7 0 -6 0 -5 Unit V V V A A W °C °C -A -8 40 150 - 4 5 to +150 -A -8 40 150 - 4 5 to +150 2SB857 , 2SB858 Electrical Characteristics (Ta = 25 °C) 2SB857 Item Collector to base breakdown voltage Collector to , : 1. The 2SB857 and 2SB858 are grouped by hF E 1 as follows. 2. Pulse test B 60 to 120 C D


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PDF 2SB857 2SB858 2SD1133 2SD1134 O-220AB 2SB857 2SB857,
2000 - 2SB858

Abstract: 2SB857 2SD1133 2SD1134 DSA003644
Text: 2SB857 , 2SB858 Silicon PNP Triple Diffused ADE-208-859 (Z) 1st. Edition Sep. 2000 , °C) Ratings Item Symbol 2SB857 2SB858 Unit Collector to base voltage VCBO ­70 ­70 , : 1. Value at TC = 25°C 2SB857 , 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 2SB858 , voltage 1 Notes: 1. The 2SB857 and 2SB858 are grouped by h FE1 as follows. 2. Pulse test B C , power dissipation Pc (W) 60 2SB857 2SB858 ­2 ­5 ­10 ­20 ­50 ­100 Collector to emitter Voltage


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PDF 2SB857, 2SB858 ADE-208-859 2SD1133 2SD1134 O-220AB 2SB857 2SB858 2SB857 2SD1134 DSA003644
2sb857

Abstract: 2SB858 2sb858 datasheet
Text: SavantIC Semiconductor Product Specification 2SB857 2SB858 Silicon PNP Power Transistors , voltage VCEO CONDITIONS Open emitter Collector-emitter voltage 2SB857 Emitter-base voltage , ~150 TC=25 SavantIC Semiconductor Product Specification 2SB857 2SB858 Silicon PNP Power , CONDITIONS 2SB857 Collector-emitter breakdown voltage MIN TYP. MAX UNIT -50 IC , Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SB857


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PDF 2SB857 2SB858 O-220C 2SD1133/1134 2SB857 2SB858 2sb858 datasheet
2SB857

Abstract: 2SB858
Text: Inchange Semiconductor Product Specification 2SB857 2SB858 Silicon PNP Power Transistors , Open emitter 2SB857 VCEO TOR UC CONDITIONS TC=25 Inchange Semiconductor Product Specification 2SB857 2SB858 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO PARAMETER CONDITIONS 2SB857 Collector-emitter breakdown voltage , 15 MHz Inchange Semiconductor Product Specification 2SB857 2SB858 Silicon PNP Power


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PDF 2SB857 2SB858 O-220C 2SD1133/1134 2SB858
2009 - Not Available

Abstract: No abstract text available
Text: UNISO TE NIC CHNO G SCO LTD LO IE ., 2SB857 PNP SILICON TRANSISTOR SI LI CON PN P T RAN SI ST OR ̈ DESCRI PT I ON Low frequency power amplifier. Lead-free: 2SB857L Halogen-free: 2SB857G ̈ ORDERI N G I N FORM AT I ON Normal 2SB857-x-T6C-K 2SB857-x-TA3-T 2SB857-x-TN3-R Order Number Lead Free 2SB857L-x-T6C-K 2SB857L-x-TA3-T 2SB857L-x-TN3-R Halogen Free 2SB857G-x-T6C-K 2SB857G-x-TA3-T 2SB857G-x-TN3-R www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd


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PDF 2SB857 2SB857L 2SB857G 2SB857-x-T6C-K 2SB857-x-TA3-T 2SB857-x-TN3-R 2SB857L-x-T6C-K 2SB857L-x-TA3-T 2SB857L-x-TN3-R 2SB857G-x-T6C-K
2SB857

Abstract: 2SB858 25B857 2SD1133 2SD1134
Text: HITACHI 2SB857 , 2SB858 SILICON PNP TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER , limitier (Dimensions lit mm) (JEDEC TO-22QAB) ■ABSOLUTE MAXIMUM RATINGS (Ta^25*C) Item Symbol 2SB857 , CHARACTERISTICS (Ta=25aC) Jiem Symlwjl Test Condition 2SB857 2SB858 Unii min, typ. max. min. ' typ , 2SB857 and 2SB858 are grouped by h rei as follows. * Pulse Test _ B C D 60 to 120 100 10 200 160 io 320 HITACHI 2SB857 , 2SB858 C'ollcckw io l'initier voltige V(r: (Vj COLLECTOR TO


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PDF 2SB857, 2SB858 2SD1133 2SD1134 153im O-22QAB) 2SB857 2SI3B58 2SB858 25B857 2SD1134
2000 - transistor 2SB857

Abstract: 2SB857 2SB858 2SD1133 2SD1134
Text: products contained therein. 2SB857 , 2SB858 Silicon PNP Triple Diffused ADE-208-859 (Z) 1st , Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB857 2SB858 Unit Collector to base , °C Note: 1. Value at TC = 25°C 2SB857 , 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 2SB858 Item Symbol Min Typ Max Min Typ Max Unit Test conditions , saturation voltage 1 Notes: 1. The 2SB857 and 2SB858 are grouped by h FE1 as follows. 2. Pulse test B


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PDF D-85622 transistor 2SB857 2SB857 2SB858 2SD1133 2SD1134
2000 - 2SD1134

Abstract: 2SB857 2SB858 2SD1133
Text: products contained therein. 2SB857 , 2SB858 Silicon PNP Triple Diffused ADE-208-859 (Z) 1st , Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB857 2SB858 Unit Collector to base , °C Note: 1. Value at TC = 25°C 2SB857 , 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 2SB858 Item Symbol Min Typ Max Min Typ Max Unit Test conditions , saturation voltage 1 Notes: 1. The 2SB857 and 2SB858 are grouped by h FE1 as follows. 2. Pulse test B


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PDF D-85622 2SD1134 2SB857 2SB858 2SD1133
transistor 2SB857

Abstract: 2SB857 2SD1133
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB857 DESCRIPTION ·Collector Current: IC= -4A ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -2A ·High Collector Power Dissipation ·Complement to Type 2SD1133 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE , isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB857


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PDF 2SB857 2SD1133 transistor 2SB857 2SB857 2SD1133
761b nec

Abstract: 2SB1010 2sb1041 761a 2sa684 nec 2SA684 2SB737 2SB927 2SB686 761-B
Text: 2SA1309A 2SA933S 2SB 760 fé t 2SA815 2SB703 2SB857 2SB1052 2SB1369 2SB 760A fé t 2SA815 2SB703 , 2SB834 2SB703 2SB857 2SB941 2SB1369 2SB 761A fé t 2SB834 2SB703 2SB859 2SB941A 2SA1634 2SB 761B


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PDF 2SB927 2SB739 2SB1010 2SA1705 2SB740 2SA684 2SB1035 2SB1041 2SA133S 2SA1313 761b nec 2SB1010 2sb1041 761a 2sa684 nec 2SB737 2SB927 2SB686 761-B
2004 - PT 10000

Abstract: No abstract text available
Text: UTC 2SB857 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR DESCRIPTION Low frequency power amplifier. 1 TO-126C 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25) PARAMETER Collector-Base Voltages Collector-Emitter Voltage Emitter-Base Voltage Collector , QW-R217-006,A UTC 2SB857 PNP EPITAXIAL SILICON TRANSISTOR Saturation Voltage & Collector Current , ., LTD. 2 QW-R217-006,A UTC 2SB857 PNP EPITAXIAL SILICON TRANSISTOR UTC assumes no


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PDF 2SB857 O-126C QW-R217-006 PT 10000
2SB857

Abstract: 2SB858 2SD1133 2SD1134
Text: products contained therein. 2SB857 , 2SB858 Silicon PNP Triple Diffused ADE-208-859 (Z) 1st , Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB857 2SB858 Unit Collector to base , °C Note: 1. Value at TC = 25°C 2SB857 , 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 2SB858 Item Symbol Min Typ Max Min Typ Max Unit Test conditions , saturation voltage 1 Notes: 1. The 2SB857 and 2SB858 are grouped by h FE1 as follows. 2. Pulse test B


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PDF D-85622 2SB857 2SB858 2SD1133 2SD1134
2000 - Not Available

Abstract: No abstract text available
Text: products contained therein. 2SB857 , 2SB858 Silicon PNP Triple Diffused ADE-208-859 (Z) 1st. Edition , temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 2SB857 ­70 ­50 , 2SB857 , 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 Item Collector to base breakdown voltage , bandwidth product f T Notes: 1. The 2SB857 and 2SB858 are grouped by h FE1 as follows. 2. Pulse test B 60 , V, ­0.24 A) ­0.2 ­0.1 ­0.05 ­1 2SB857 2SB858 ­2 ­5 ­10 ­20 ­50 ­100 Collector to emitter Voltage VCE


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PDF D-85622
2009 - Not Available

Abstract: No abstract text available
Text: MCC TM Micro Commercial Components Features • • • • • 2SB857-B 2SB857-C 2SB857-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Low Frequency Power Amplifier PNP Silicon Power Transistors Epoxy meets UL 94 V-0 flammability rating


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PDF 2SB857-B 2SB857-C 2SB857-D
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